• 전기의세계
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• v.30 no.5
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• pp.268-273
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• 1981

본고의 내용은 다음과 같다. 1. 유전체중 전하의 이동 2. 케리어의 발생과 소멸 3. 유전체의 전류, 전압특성과 공간전하의 효과 4. 파괴전의 전류의 증가

• The KIPS Transactions:PartA
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• v.15A no.4
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• pp.211-216
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• 2008

In this paper we fabricated and measured the $0.26{\mu}m$ NMOSFET with wet gate oxide and nitride oxide gate to compare that the charateristics of hot carrier effect, charge to breakdown, transistor Id_Vg curve, charge trapping, and SILC(Stress Induced Leakage Current) using the HP4145 device tester. As a result we find that the characteristics of nitride oxide gate device better than wet gate oxide device, especially hot carrier lifetime(nitride oxide gate device satisfied 30 years, but the lifetime of wet gate oxide was only 0.1 year), variation of Vg, charge to breakdown, electric field simulation and charge trapping etc.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.6
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• pp.14-18
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• 2019

The conductivity of a semiconductor is primarily determined by the carriers. To achieve higher conductivity, the number of carriers should be high, and an energy trap level is created so that the carriers can cross the forbidden zone with low energy. Carriers have a crystalline binding structure, and interfacial mismatching tends to make them less conductive. In general, high-concentration doping is typically used to increase mobility. However, higher conductivity is also observed in non-orthogonal conjugation structures. In this study, the phenomena of higher conductivity and higher mobility were observed with space charge limiting current due to tunneling phenomena, which are different from trapping phenomena. In an atypical structure, the number of carriers is low, the resistance is high, and the on/off characteristics of capacitances are improved, thus increasing the mobility. ZTO thin film improved the on/off characteristics of capacitances after heat treating at $150^{\circ}C$. In charging and discharging tests, there was a time difference in the charge and discharging shapes, there was no distinction between n and p type, and the bonding structure was amorphous, such as in the depletion layer. The amorphous bonding structure can be seen as a potential barrier, which is also a source of space charge limiting current and causes conduction as a result of tunneling. Thus, increased mobility was observed in the non-structured configuration, and the conductivity increased despite the reduction of carriers.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.2
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• pp.185-191
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• 1992

In this paper, it is attempted to distinguish the charged particles and to judge the polarity by the use of Thermally Stimulated Current(TSC) and Temperature Gradient Thermally Stimulated Surface Potential Measurement(TG-TSSP)with experimental insulation material XLPE-EVA for power cables which is made by blending cross-linked polyethylene(XLPE) and ethylene-vinylacetate copolymer(EVA). In addition, it is performed to investigate the effect of EVA blending. From the experimental results, it is known that for the case of XLPE-EVA blended experimental material, the generation of space charged electric field is not obtained in the high temperature region due to the obatruction of the injection of trapping carrier by the electron and the positive hole.

• Journal of the Korean Society of Radiology
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• v.4 no.4
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• pp.37-40
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• 2010

In this paper, transport properties of charge carrier which is produced by x-ray exposure were investigated.. It is the research of charge transport and specific property of trap that is performed in direct digital x-ray image receptor. We measured transit time and drift mobility of charge carriers of a-Se photoconductor using time-of-flight method. We made a testing glass with a-Se of $100{\mu}m$ thickness on corning glass using thermal evaporation method. As a result of this experiment, electron and hole transit time was each $229.17{\mu}s$ and $8.73{\mu}s$ at $10V/{\mu}m$ electric field and drift mobility was each $0.00174cm^2/V{\cdot}s$, $0.04584cm^2/V{\cdot}s$. But the results shows us different measurement value of electron and charge drift mobility and it was investigated about charge transport properties and trap mechanism.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.384-384
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• 2009

에폭시 수지에 유기화된 층상실리케이트 나노입자를 1wt% 충진한 경우 나노콤포지트와 마이크로 입자를 50wt% 충진한 경우 마이크로 콤포지트를 제조하였다. 초음파 분산법을 이용하여 나노 및 마이크로입자를 120분 동안 분산시킨 에폭시- 나노/마이크로 콤포지트이다. 나노콤포지트와 마이크로콤포지트의 단시간 교류절연파괴특성을 조사하기 위해 와이블 분포 plot을 통하여 나타내었다. 와이블 plot은 기울기로서 형상파라미터를 나타낸 경우로서 이는 파괴강도의 균질성을 의미하게 된다. 63.2% 누적분포함수를 나타낸 경우 척도파라미터로서 나타내어진다. 마이크로 콤포지트의 경우 형상파라미터가 2.99, 나노콤포지트는 8.96를 나타내었다. 또한 마이크로 콤포지트 및 나노콤포지트 스케일 파라미터는 164.25kV/mm, 245kV/mm를 얻었다. 또한 B10수명의 경우 마이크로콤포지트와 나노콤포지트의 경우 77.57kV/mm, 139.3 6kV/mm로서 나노콤포지트의 경우 완전하게 박리가 일어난 경우이다. 마이크로 입자를 분산시켜 입자간거리와 나노입자를 분산시켜 박리가 일어난 경우 입자간거리는 대단히 큰 차이를 나타내고 있다. 나노입자가 교번전계 하에서 주입된 전하 및 케리어 이동을 억제하는 경우로 이와같은 결과를 얻을 수 있다.