• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.5
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• pp.313-322
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• 2001

The effects of Zr/Ti concentration ratio in PLZT (10/y/z) thin films prepared by sol-gel method are investigated for the NVFRAM application. Rosette and pyrochlore phase are observed in PLZT (10/40/60) thin film and the (100) orientation, the grain size, and the surface roughness of PLZT thin films increase due to the increase of Ti amount in Zr/Ti concentration ratio. As Ti amount of Zr/Ti concentration ratio increases, the dielectric constants at 10KHz decrease from 600 to 400, while the loss tangents increase from 0.028 to 0.053 and the leakage current densities at 170 kY/cm decrease from 1.64$\times$10$^{-6}$ to 1.26$\times$10$^{-7}$ A/$\textrm{cm}^2$. In the results of hysteresis loops measured at $\pm$ 170 ㎸/cm, the remanent polarization and the coercive field increase from 6.62 to 12.86 $\mu$C/$\textrm{cm}^2$ and from 32.15 to 56.45 ㎸/cm, respectively, according to the change from 40/60 to 0/100 in Zr/Ti concentration ratio. Fatigue and retention properties also improve much as the Zr/Ti concentration ratio change from 40/60 to 0/100. After applying 10$^{9}$ square pulses with $\pm$5V, the remanent polarization of the PLZT (10/40/60) thin film decreases 50％ from the initial state while that of the PLZT (10/0/100) thin film decreases 30％. In the results of retention measurements of 10$^{5}$ s, the remanent polarization of the PLZT (10/0/100) thin film decreases only 11％ from the initial state, while that of the PLZT (10/40/60) thin film decreases 40%.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.4
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• pp.23-29
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• 2000

We demonstrate the fabrication method of high-density and high-quality solder bump solving a copper (Cu) cross-contamination in Si-LSI laboratory. The Cu cross-contamination is solved by separating solder-bump process by two steps. Former is via-formation process excluding Cu/Ti under ball metallurgy (UBM) layer sputtering in Si-LSI laboratory. Latter is electroplating process including Ti-adhesion and Cu-seed layers sputtering out of Si-LSI laboratory. Thick photoresist (PR) is achieved by a multiple coating method. After TiW/Al-electrode sputtering for electroplating and via formation in Si-LSI laboratory, Cu/Ti UBM layer is sputtered on sample. The Cu-seed layer on the PR is etched during Cu-electroplating with low-electroplating rate due to a difference in resistance of UBM layer between via bottom and PR. Therefore Cu-buffer layer can be electroplated selectively at the via bottom. After etching the Ti-adhesion layer on the PR, Sn/Pb solder layer with a composition of 60/40 is electroplated using a tin-lead electroplating bath with a metal stoichiometry of 60/40 (weight percent ratio). Scanning electron microscope image shows that the fabricated solder bump is high-uniformity and high-quality as well as symmetric mushroom shape. The solder bumps with even 40/60 $\mu\textrm{m}$ in diameter/pitch do not touch during electroplating and reflow procedures. The solder-bump process of high-uniformity and high-density with the Cu cross-contamination free in Si-LSI laboratory will be effective for electronic microwave application.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.8
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• pp.927-938
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• 2014

A number of crime and disease relief situation show a clear increasing trend in domestic and overseas country. In particular, we desperately need a fast location information sharing with high accuracy for dealing with this situation efficiently. In this paper, we propose a DGPS framework and performance evaluation based on Web service enable increase location accuracy using low-cost GPS or AGPS. The framework consists of mobile station to realize the final service by receiving the correction values that are created in the base station closest to the current position from DGPS server, base station system to transmit the correct values to DPGS server by installing at base point and DGPS framework working at DGPS server. Our framework is fundamentally designed to respond based on XML to service request. In addition, for performance evaluation, we make use of 3 sites of Level 2 city base-station among the base stations being operated in Suncheon-si. Through performance evaluation, we show that our framework outperforms about 10%~15% in terms of error improvement rate, compared with the existing schemes. And we have the advantage that various services can be expanded owing to receiving the correction values through mobile device such as, smart phone, smart pad, net-book by using XML based Web services.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.94-104
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• 2008

In this paper, we propose a new architecture of multiplier-and-accumulator (MAC) for high speed multiplication and accumulation arithmetic. By combining multiplication with accumulation and devising a hybrid type of carry save adder (CSA), the performance was improved. Since the accumulator which has the largest delay in MAC was removed and its function was included into CSA, the overall performance becomes to be elevated. The proposed CSA tree uses 1's complement-based radix-2 modified booth algorithm (MBA) and has the modified array for the sign extension in order to increase the bit density of operands. The CSA propagates the carries by the least significant bits of the partial products and generates the least significant bits in advance for decreasing the number of the input bits of the final adder. Also, the proposed MAC accumulates the intermediate results in the type of sum and carry bits not the output of the final adder for improving the performance by optimizing the efficiency of pipeline scheme. The proposed architecture was synthesized with $250{\mu}m,\;180{\mu}m,\;130{\mu}m$ and 90nm standard CMOS library after designing it. We analyzed the results such as hardware resource, delay, and pipeline which are based on the theoretical and experimental estimation. We used Sakurai's alpha power low for the delay modeling. The proposed MAC has the superior properties to the standard design in many ways and its performance is twice as much than the previous research in the similar clock frequency.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.1-6
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• 2008

In this paper, millimeter-wave broadband MHEMT (Metamorphic High Electron Mobility Transistor) cascode amplifiers were designed and fabricated. The $0.1{\mu}m$ InGaAs/InAlAs/GaAs MHEMT was fabricated for cascode amplifiers. The DC characteristics of MHEMT are 670 mA/mm of drain current density, 588 mS/mm of maximum transconductance. The current gain cut-off frequency($f_T$) is 139 GHz and the maximum oscillation frequency($f_{max}$) is 266 GHz. To prevent oscillation of the designed cascode amplifiers, a parallel resistor and capacitor were connected to the drain of common gate device. By using the CPW (Coplanar Waveguide) transmission line, the cascode amplifier was designed and matched for the broadband characteristics. The designed amplifier was fabricated by the MHEMT MMIC process that was developed through this research. As the results of measurement, the amplifier was obtained 3 dB bandwidth of 50.37 GHz between 20.76 to 71.13 GHz. Also, this amplifier represents the S21 gain with the average 7.07 dB gain in bandwidth and the maximum gain of 10.3 dB at 30 GHz.

• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.474-478
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• 2007

Nanostructures of $SiN_x$ were made by bombardment of ionized $N_2$ on Si surface and subsequent annealing. Atomic force micrograph showed the density of $SiN_x$ nanostructures was $3\times10^{10}/cm^2$. Their lateral size and height were 40$\sim$60 nm and 15 nm, respectively. The chemical state of the nanostructure was measured using X-ray photoelectron spectroscopy, which changed from $SiN_x$ to $Si_3N_4\;+\;SiN_x$ as the bombarding ionized gas current increases. Upon annealing, transmission electron micrograph showed a clear evidence for crystalline Si phase formation inside the $SiN_x$ nanostructures. Photoluminescence peak observed at around 400nm was thought to be originated from the interface states between the nanocrystalline Si and surrounding $SiN_x$ nanostructures.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.10 no.5
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• pp.409-416
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• 2017

In this paper, we consider a framework of compressed sensing over finite fields. One measurement sample is obtained by an inner product of a row of a sensing matrix and a sparse signal vector. A recovery algorithm proposed in this study for sparse signals based probabilistic decoding is used to find a solution of compressed sensing. Until now compressed sensing theory has dealt with real-valued or complex-valued systems, but for the processing of the original real or complex signals, the loss of the information occurs from the discretization. The motivation of this work can be found in efforts to solve inverse problems for discrete signals. The framework proposed in this paper uses a parity-check matrix of low-density parity-check (LDPC) codes developed in coding theory as a sensing matrix. We develop a stochastic algorithm to reconstruct sparse signals over finite field. Unlike LDPC decoding, which is published in existing coding theory, we design an iterative algorithm using probability distribution of sparse signals. Through the proposed recovery algorithm, we achieve better reconstruction performance as the size of finite fields increases. Since the sensing matrix of compressed sensing shows good performance even in the low density matrix such as the parity-check matrix, it is expected to be actively used in applications considering discrete signals.

• Analytical Science and Technology
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• v.26 no.4
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• pp.235-244
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• 2013

Detection of halogens using laser-induced breakdown spectroscopy (LIBS) in open air is very difficult since their strong atomic emission lines are located in VUV region. In NIR region, there are other emission lines of halogens through electronic transitions between excited states. However, these lines undergo Stark broadening severely. We report the observation of the emission lines of halogens in laser-induced plasma (LIP) spectra in NIR region using a helium gas flow. Particularly, the emission lines of iodine at 804.374 and 905.833 nm from LIPs have been observed for the first time. In the helium ambient gas, Stark broadening of the emission lines and background continuum emission could be suppressed significantly. Variations of the line intensity, plasma temperature, and electron density with the helium flow rate was investigated. Detection of chlorine and bromine in flame retardant of rubbers was demonstrated using this method. Finally, we suggest a pulsed helium gas jet as a practical and ecomonical helium gas source for the LIBS analysis of halogens in open air.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.1 s.343
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• pp.17-26
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• 2006

The analog Viterbi decoder for the PR (1 2 2 1) which is used for BVD read channel is designed with circular analog parallel circuits. Since the inter symbol interference is serious problem in the high density magnetic storage device or DVD, the PRML technology is normally employed for the purpose of minimizing the decoding error. The feature of the PRML technology is with the multi-level coding according to the predetermined combining rule among the neighboring symbols and with the decoding according to the known combining rule. Though the conventional PRML technology is implemented with the digital circuits, the recent trend towards this end is with the utilization of the analog circuits due to the requirements of higher speed and lower power in the DVD read channel. In this study, the Viterbi decoder which is the bottleneck of the PRML implementation is designed with the analog parallel circuit structure. The designed Viterbi decoder for the PR (1 2 2 1) signal shows 3 times faster in the speed and 1/3 times less in the power consumption than thoseoftheconventionaldigitalcounterpart.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.2
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• pp.13-21
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• 2000

Au-black for the application of the long wavelength infrared absorber has been prepared by evaporating Au under nitrogen gas-filled low vacuum condition. Characteristics of the deposited Au-black were carefully investigated through structural analysis, infrared absorbance measurement, and patterning of the layer, all of which are dependent on the deposition condition. High density of micro-cavity that trapped infrared were obtained, and infrared absorbance in the wavelength range from 3 $\mu\textrm{g}$ to 14 $\mu\textrm{g}$ was found to be about 90% when the Au-black layer was produced under the deposition condition of mass Per area of about 600 $\mu\textrm{g}$/cm$^{2}$ and chamber pressure of above 1 Torr. Photoresist lift-off process could be performed to pattern the Au-black, of which mass per area was below 900 $\mu\textrm{g}$/cm/ sup 2/. In view of absorbance, heat capacity, and pattern formation, the deposition condition of chamber pressure of about 1 Tow and mass per area of about 600$\mu\textrm{g}$/cm$^{2}$ was most adequate for preparing the Au-black as an infrared absorber.