• Title/Summary/Keyword: 전자플래시

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Diminishing FTL Log Area Searching Cost Using the Counting Bloom Filter (카운팅 블룸 필터를 활용한 FTL 로그영역 탐색 비용 감소)

  • Kang, Woon-Hak;Lee, Sang-Won
    • Proceedings of the Korea Information Processing Society Conference
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    • 2009.11a
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    • pp.71-72
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    • 2009
  • 플래시 메모리은 많은 부분에서 기존의 저장장치인 HDD에 비해 좋은 성능을 지녔다. 하지만 HDD와는 달리 데이터의 덮어쓰기가 허용 되지 않는다. 이 문제를 해결하기 위해 플래시 메모리는 FTL(Flash Translation Layer)을 사용하고 있으며, FTL을 통해 기존의 저장장치와 동일하게 사용할 수 있다. FTL들 중 로그영역을 사용하여 성능을 개선한 것들이 많은데, 로그영역의 사용으로 인해 읽기/쓰기 작업시 반드시 로그영역을 탐색을 해야만 했다. 본 논문에서는 카운팅 블룸필터(Counting bloom filter)를 활용하여 불필요한 로그영역 탐색을 줄이는 기법을 제안하였고, 실험을 통해 로그영역에 최신 데이터가 없는 경우 탐색횟수를 크게 줄일 수 있는 것을 확인하였다.

A Study for Configuring Hybrid Storage System include DRAM SSD and HDD devices (DRAM SSD와 하드디스크 어레이를 이용한 하이브리드 저장장치 시스템 설계)

  • Kim, Young-Hwan;Son, Jae-Gi;Park, Changwon
    • Proceedings of the Korea Information Processing Society Conference
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    • 2012.11a
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    • pp.288-289
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    • 2012
  • 최근 데이터 저장을 위한 고속 입출력에서 병목현상을 해결하기 위해 다양한 SSD(Solid State Drive) 관련 연구가 많이 수행되고 있다. 대표적인 것으로 비휘발성 메모리인 플래시와 차세대 반도체 메모리인 SCM(Storage Class Memory) SSD가 있고, 휘발성 메모리인 DRAM기반의 SSD가 있다. 플래시 또는 SCM 메모리기반 저장장치는 하드 디스크기반 저장장치에 비해 읽기 속도가 빠르며, 내구성이 강하다는 장점으로 새로운 저장장치 시스템의 저장매체로 부각되고 있으나, 단위 저장 공간 당 높은 가격으로 인해 저장장치 시스템에 적용하기 에는 많은 문제점이 있다. 최근에는 이러한 문제를 해결하기 위해 고용량의 하드디스크와 SSD를 RAID 또는 단일 저장장치 매체로 구성하는 하이브리드 저장장치에 관한 연구와 제품이 출시되고 있다. 본 논문에서는 이러한 하이브리드 저장 매체 어레이를 저장장치 시스템으로 구성하기 위한 볼륨구성과 해당 서버에 볼륨 제공 서비스를 수행하기 위한 하이브리드 저장장치 시스템 설계 방법에 대해 설명한다.

Erase Group Flash Translation Layer for Multi Block Erase of Fusion Flash Memory (퓨전 플래시 메모리의 다중 블록 삭제를 위한 Erase Croup Flash Translation Layer)

  • Lee, Dong-Hwan;Cho, Won-Hee;Kim, Deok-Hwan
    • Journal of the Institute of Electronics Engineers of Korea CI
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    • v.46 no.4
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    • pp.21-30
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    • 2009
  • Fusion flash memory such as OneNAND$^{TM}$ is popular as a ubiquitous storage device for embedded systems because it has advantages of NAND and NOR flash memory that it can support large capacity, fast read/write performance and XIP(eXecute-In-Place). Besides, OneNAND$^{TM}$ provides not only advantages of hybrid structure but also multi-block erase function that improves slow erase performance by erasing the multiple blocks simultaneously. But traditional NAND Flash Translation Layer may not fully support it because the garbage collection of traditional FTL only considers a few block as victim block and erases them. In this paper, we propose an Erase Group Flash Translation Layer for improving multi-block erase function. EGFTL uses a superblock scheme for enhancing garbage collection performance and invalid block management to erase multiple blocks simultaneously. Also, it uses clustered hash table to improve the address translation performance of the superblock scheme. The experimental results show that the garbage collection performance of EGFTL is 30% higher than those of traditional FTLs, and the address translation performance of EGFTL is 5% higher than that of Superblock scheme.

MLC NAND-type Flash Memory Built-In Self Test for research (MLC NAND-형 Flash Memory 내장 자체 테스트에 대한 연구)

  • Kim, Jin-Wan;Kim, Tae-Hwan;Chang, Hoon
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.3
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    • pp.61-71
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    • 2014
  • As the occupancy rate of the flash memory increases in the storage media market for the embedded system and the semi-conductor industry grows, the demand and supply of flash memory is increasing by a big margin. They are especially used in large quantity in the smart phones, tablets, PC, SSD and Soc(System on Chip) etc. The flash memory is divided into the NOR type and NAND type according to the cell arrangement structure and the NAND type is divided into the SLC(Single Level Cell) and MLC(Multi Level Cell) according to the number of bits that can be stored in each cell. Many tests have been performed on NOR type such as BIST(Bulit-In Self Test) and BIRA(Bulit-In Redundancy Analysis) etc, but there is little study on the NAND type. For the case of the existing BIST, the test can be proceeded using external equipments like ATE of high price. However, this paper is an attempt for the improvement of credibility and harvest rate of the system by proposing the BIST for the MLC NAND type flash memory of Finite State Machine structure on which the pattern test can be performed without external equipment since the necessary patterns are embedded in the interior and which uses the MLC NAND March(x) algorithm and pattern which had been proposed for the MLC NAND type flash memory.

Characterizing the Tail Distribution of Android IO Workload (안드로이드 입출력 부하의 꼬리분포 특성분석)

  • Park, Changhyun;Won, Youjip;Park, Yongjun
    • KIPS Transactions on Computer and Communication Systems
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    • v.8 no.10
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    • pp.245-250
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    • 2019
  • The use of NAND flash memory has increased rapidly due to the development of mobile fields. However, NAND flash memory has a limited lifespan, so studies are underway to predict its lifespan. Workload is one of the factors that significantly affect the life of NAND flash memory, and workload analysis studies in mobile environments are insufficient. In this paper, we analyze the distribution of workload in the mobile environment by collecting traces generated by using Android-based smartphones. The collected traces can be divided into three groups of hotness. Also they are distributed in the form of heavy tails. We fit this to the Pareto, Lognormal, and Weibull distributions, and Traces are closest to the Pareto distribution.

Implementation of The User-level Flash File System Based on Linux (리눅스 기반의 사용자 수준 플래시 파일 시스템의 구현)

  • Kwon, Woo-Il;Park, Hyun-Hui;Yang, Seung-Min
    • The KIPS Transactions:PartA
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    • v.11A no.3
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    • pp.139-148
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    • 2004
  • The number of applications of small embedded systems such as PDAs, electronic note books, etc. based on Kinux, have increased. Due to the monolithic characteristic of Linux kernel, it is not suitable to satisfy the various kinds of embedded application requirement. To assist the shortcoming of monolithic kernel, we implement uJFFS 113th file system as an application program process which runs in user space. This solution consists of a file system and a flash device driver, and makes Linux kernel smaller by separating the file system from the kernel. uJFFS consists of ujffs_fs that plays a part of file system and ujffs_drv that controls a flash device. Which provides the same user interface as Linux does. A Device driver for the physical device is implemented in user pace, which prevents kernel failures from file system errors. So uJFFS can increase stability of the system.

Design of the Virtual SD Memory Card System on the Embedded Linux (임베디드 리눅스에서의 가상 SD 메모리 카드 시스템 설계)

  • Moon, Ji-Hoon;Oh, Jae-Chul
    • The Journal of the Korea institute of electronic communication sciences
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    • v.9 no.1
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    • pp.77-82
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    • 2014
  • SD memory cards are widely used in portable digital devices, and most of them exploit NAND flash memory as their storage, so that they have a feature of storing users' important data safely with low costs. In case of using NAND flash memory as storage, however, there is no method to store users' data if memory capacity is insufficient when transferring a large volume of data. This paper proposes a virtual SD memory card system. It used a SD memory card device driver to process data requested from a host by exploiting external storage rather than by exploiting flash memory as a memory core for storing data to the SD memory card. For experiment, it used the FPGA-based SD card slave controller IP on the SMC controller with a S3C2450 ARM CPU to test.

Programmable Memory BIST and BISR Using Flash Memory for Embedded Memory (내장 메모리를 위한 프로그램 가능한 자체 테스트와 플래시 메모리를 이용한 자가 복구 기술)

  • Hong, Won-Gi;Choi, Jung-Dai;Shim, Eun-Sung;Chang, Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.2
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    • pp.69-81
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    • 2008
  • The density of Memory has been increased by great challenge for memory technology, so elements of memory become smaller than before and the sensitivity to faults increases. As a result of these changes, memory testing becomes more complex. The number of storage elements is increased per chip, and the cost of test becomes more remarkable as the cost per transistor drops. Proposed design doesn't need to control from outside environment, because it integrates into memory. The proposed scheme supports the various memory testing algorithms. Consequently, the proposed one is more efficient in terms of test cost and test data to be applied. Moreover, we proposed a reallocation algorithm for faulty memory parts. It has an efficient reallocation scheme with row and column redundant memory. Previous reallocation information is obtained from faulty memory every each tests. However proposed scheme avoids to this problem. because onetime test result from reallocation information can save to flash memory. In this paper, a reallocation scheme has been increased efficiency because of using flash memory.

Development of Simulator using RAM Disk for FTL Performance Analysis (RAM 디스크를 이용한 FTL 성능 분석 시뮬레이터 개발)

  • Ihm, Dong-Hyuk;Park, Seong-Mo
    • Journal of the Institute of Electronics Engineers of Korea CI
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    • v.47 no.5
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    • pp.35-40
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    • 2010
  • NAND flash memory has been widely used than traditional HDD in PDA and other mobile devices, embedded systems, PC because of faster access speed, low power consumption, vibration resistance and other benefits. DiskSim and other HDD simulators has been developed that for find improvements for the software or hardware. But there is a few Linux-based simulators for NAND flash memory and SSD. There is necessary for Windows-based NAND flash simulator because storage devices and PC using Windows. This paper describe for development of simulator-NFSim for FTL performance analysis in NAND flash. NFSim is used to measure performance of various FTL algorithms and FTL wear-level. NAND flash memory model and FTL algorithm developed using Windows Driver Model and class for scalability. There is no need for another tools because NFSim using graph tool for data measure of FTL performance.

A study on characteristics of the scaled SONOSFET NVSM for Flash memory (플래시메모리를 위한 scaled SONOSFET NVSM 의 프로그래밍 조건과 특성에 관한 연구)

  • 박희정;박승진;홍순혁;남동우;서광열
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.751-754
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    • 2000
  • When charge-trap SONOS cells are used flash memory, the tunneling program/erase condition to minimize the generation of interface traps was investigated. SONOSFET NVSM cells were fabricated using 0.35$\mu\textrm{m}$ standard memory cell embedded logic process including the ONO cell process. based on retrograde twin-well, single-poly, single metal CMOS process. The thickness of ONO triple-dielectric for memory cell is tunnel oxide of 24${\AA}$, nitride of 74 ${\AA}$, blocking oxide of 25 ${\AA}$, respectively. The program mode(Vg: 7,8,9 V, Vs/Vd: -3 V, Vb: floating) and the erase mode(Vg: -4,-5,-6 V, Vs/Vd: floating, Vb: 3V) by modified Fowler-Nordheim(MFN) tunneling were used. The proposed programming condition for the flash memory of SONOSFET NVSM cells showed less degradation($\Delta$Vth, S, Gm) characteristics than channel MFN tunneling operation. Also the program inhibit conditions of unselected cell for separated source lines NOR-tyupe flash memory application were investigated. we demonstrated that the program disturb phenomenon did not occur at source/drain voltage of 1 V∼4 V and gate voltage of 0 V∼4.

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