• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.52-55
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• 2000

The temperature effects of programming speed and endurance characteristics in p-channel flash memory cell have been investigated. In the case of room temperature, the programming speed of p-channel flash memory by using BTB scheme is faster than that by using CHE scheme. However, endurance characteristics with BTB programming scheme is not better than that with CHE programming scheme. In the case of elevated temperature, CHE programming speed is reduced due the gate current degradation but BTB programming speed is enhanced due to the increasing of gate current. Finally, the endurance characteristics of both schemes are improved due to the reduction of gate oxide traps.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.469-472
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• 2004

In this paper a current mode sense amplifier suitable for 30nm SONOS flash memories read operation is presented. The proposed sense amplifier employs cross coupled latch type circuit and current mirror to amplify signal from selected memory cell. This sense amplifier provides fast response in low voltage and low current dissipation. Simulation results show the sensing delay time and current dissipation for power supply voltages Vdd to expose limitations of the sense amplifier in various operating conditions.

• 한국전기전자재료학회논문지
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• 제18권3호
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• pp.193-198
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• 2005

NOR type flash 32 ${\times}$ 32 way are fabricated by using the typical 0.35 ${\mu}{\textrm}{m}$ CMOS process. The structure of array is the NOR type with common source line. In this paper, optimized program and erase voltage conditions are presented to realize multi-bit per cell at the CSL-NOR array. These are considered selectivity of selected bit and disturbances of unselected bits. Retention characteristics of locally trapped-charges in the nitride layer are investigated. The lateral diffusion and vertical detrapping to the tunneling oxide of locally trapped charges as a function of retention time are investigated by using the charge pumping method. The results are directly shown by change of the trapped-charges quantities.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.855-858
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• 2001

The stress induced leakage currents of thin silicon oxides is investigated in the VLSI implementation of a self learning neural network integrated circuits using a linearity synapse transistor. The channel current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 41 ${\AA}$, 86${\AA}$, which have the channel width ${\times}$ length 10 ${\times}$1${\mu}$m, 10 ${\times}$0.3${\mu}$m respectively. The stress induced leakage currents will affect data retention in synapse transistors and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor made by thin silicon oxides has represented the neural states and the manipulation which gaves unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the channel current. The stress induced leakage currents affected excitatory state and inhitory state.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.26-31
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• 2002

To realize a high integrated Flash memory utilizing SONOS memory devices, the NOR type 1TC(one Transistor Cell) SONOS Flash arrays are fabricated and characterized. This SONOS Flash arrays with common source lines are designed and fabricated by conventional 0.35$\mu\textrm{m}$ CMOS process. The thickness of ONO for memory cell is tunnel oxide of 34${\AA}$, nitride of 73${\AA}$ and blocking oxide of 34${\AA}$. To investigate operating characteristics, CHEI(Channel Hot Electron Injection) method and Bit line erase method are selected as the write operation and the erase method, respectively. The disturbance characteristics according to the write/erase/read cycling are also examined. The degradation characteristics are investigated and then the reliability of SONOS flash memory is guaranteed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.13-13
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• 2010

In this paper, the electrical characteristics of Fin-type SONOS (Silicon-Oxide-Nitride-Oxide-Silicon) flash memory and Planar-type SONOS flash memory are analyzed. Compared to the Planar-type SONOS device, Fin-type SONOS device shows a good short channel effect immunity. Moreover, memory characteristics such as PIE speed, Endurance and Retention of FinFET SONOS flash are batter than that of conventional Planar-type SONOS flash memory.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.571-572
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• 2008

We propose a 4-bit 1.6GSample/s flash-A/D converter realized in a digital 0.18um 1-poly 4-metal CMOS technology. To achieve low power with good performance, we employ immanent C2MOS comparator scheme. The kickback noise is one of the most important issue in A/D comparator performance. To decrease the effect of kickback noise, here we introduce kickback neutralization technique. The designed A/D converter has an effective number of bits(ENOBs) of 3.93 while using 32mW operating at 1.6GHz.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.647-648
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• 2008

Traditional FTL and flash file systems based of NAND flash memory may not be adaptively applied to new fusion flash memory which combines the advantages of NAND and NOR flash memory. In this paper, we propose a FTL performance measurement tool using Multi Block Erase function of fusion flash memory. The performance measurement tool shows that multi block erase function can be effectively utilized in performance enhancement of garbage collection for fusion flash memory.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.1161-1162
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• 2008

일반적으로 운영체제의 데이터 백업을 목적으로 널리 사용되고 있는 하드 디스크는 대역폭와 탐색시간이 매우 저조한 성능을 보이고 있어 저장 능력과 성능사이에 격차는 나날이 증가하고 있다는 단점이 있다. 반면에 플래시 메모리의 새로운 응용 분야로 주목을 받고 있는 SSD는 고정된 반도체에 자료를 저장하기 때문에 탐색 시간이 존재하지 않아 데이터에 접근하는 시간이 훨씬 빠르다는 이점을 가지고 있다. 하지만 하드 디스크에 비해 현저히 떨어지는 저장능력과 비경제적인 가격 등의 문제점으로 인해 하드 디스크를 완전히 대치하기에는 어려움이 있다. 본 논문에서 제안하는 HFS(Hybrid File System)는 HDD와 SSD를 제안한다. HFS는 하드 디스크의 큰 저장능력과 SSD의 빠른 데이터 접근 속력 등의 각 디스크의 장점을 최대한으로 이용하여 데이터를 빠르게 처리할 수 있도록 고안 되었다.

• 전자통신동향분석
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• 제20권6호통권96호
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• pp.36-47
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• 2005

정보서비스의 발전에 따라 개인이 휴대하는 단말기 및 개인가전 제품에 장착되는 포터블 저장장치의 수요가 급증하고 있다. 정보의 저장기술의 진화에 따른 디지털 정보저장 기술의 현재를 살펴보고, 광디스크 저장기술을 중심으로 한 포터블 저장기술의 특성을 분석하였다. 현재에는 포터블 저장장치로서 플래시메모리를 기반으로 하는 메모리 카드를 비롯하여 초소형 HDD가 주류를 이루고 있는데, 미래형 포터블 광디스크 및 네트워크 저장장치에 대한 현재와 미래를 살펴 보았으며 각각의 장단점을 검토하였다. 각각의 정보저장 기술은 기술적 특성과 수요의 형태에 따라 서로 경쟁적인 관계에서 정해진 시장을 잠식하는 구조가 아니라, 상호 보완관계를 유지하면서 고유의 특성을 지닌 채 동반 발전할 것으로 분석되었다.