• Title/Summary/Keyword: 전자소자

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Recent Research Trends of Supercapacitors for Energy Storage Systems (에너지 저장시스템을 위한 슈퍼커패시터 최신 연구 동향)

  • Son, MyungSuk;Ryu, JunHyung
    • Clean Technology
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    • v.27 no.4
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    • pp.277-290
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    • 2021
  • A supercapacitor, also called an ultracapacitor or an electrochemical capacitor, stores electrochemical energy by the adsorption/desorption of electrolytic ions or a fast and reversible redox reaction at the electrode surface, which is distinct from the chemical reaction of a battery. A supercapacitor features high specific power, high capacitance, almost infinite cyclability (~ 100,000 cycle), short charging time, good stability, low maintenance cost, and fast frequency response. Supercapacitors have been used in electronic devices to meet the requirements of rapid charging/discharging, such as for memory back-up, and uninterruptible power supply (UPS). Also, their use is being extended to transportation and large industry applications that require high power/energy density, such as for electric vehicles and power quality systems of smart grids. In power generation using intermittent power sources such as solar and wind, a supercapacitor is configured in the energy storage system together with a battery to compensate for the relatively slow charging/discharging time of the battery, to contribute to extending the lifecycle of the battery, and to improve the system power quality. This article provides a concise overview of the principles, mechanisms, and classification of energy storage of supercapacitors in accordance with the electrode materials. Also, it provides a review of the status of recent research and patent, product, and market trends in supercapacitor technology. There are many challenges to be solved to meet industrial demands such as for high voltage module technologies, high efficiency charging, safety, performance improvement, and competitive prices.

Image enhancement in ultrasound passive cavitation imaging using centroid and flatness of received channel data (수신 채널 신호의 무게중심과 평탄도를 이용한 초음파 수동 공동 영상의 화질 개선)

  • Jeong, Mok Kun;Kwon, Sung Jae;Choi, Min Joo
    • The Journal of the Acoustical Society of Korea
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    • v.38 no.4
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    • pp.450-458
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    • 2019
  • Passive cavitation imaging method is used to observe the ultrasonic waves generated when a group of bubbles collapses. A problem with passive cavitation imaging is a low resolution and large side lobe levels. Since ultrasound signals generated by passive cavitation take the form of a pulse, the amplitude distribution of signals received across the receive channels varies depending on the direction of incidence. Both the centroid and flatness were calculated to determine weights at imaging points in order to discriminate between the main and side lobe signals from the signal amplitude distribution of the received channel data and to reduce the side lobe levels. The centroid quantifies how the channel data are distributed across the receive channel, and the flatness measures the variance of the channel data. We applied the centroid weight and the flatness to the passive cavitation image constructed using the delay-and-sum focusing and minimum variance beamforming methods to improve the image quality. Using computer simulation and experiment, we show that the application of weighting in delay-and-sum and minimum variance beamforming reduces side lobe levels.

AlGaN/GaN Field Effect Transistor with Gate Recess Structure and HfO2 Gate Oxide (게이트 하부 식각 구조 및 HfO2 절연층이 도입된 AlGaN/GaN 기반 전계 효과 트랜지스터)

  • Kim, Yukyung;Son, Juyeon;Lee, Seungseop;Jeon, Juho;Kim, Man-Kyung;Jang, Soohwan
    • Korean Chemical Engineering Research
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    • v.60 no.2
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    • pp.313-319
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    • 2022
  • AlGaN/GaN based HfO2 MOSHEMT (metal oxide semiconductor high electron transistor) with different gate recess depth was simulate to demonstrate a successful normally-off operation of the transistor. Three types of the HEMT structures including a conventional HEMT, a gate-recessed HEMT with 3 nm thick AlGaN layer, and MIS-HEMT without AlGaN layer in the gate region. The conventional HEMT showed a normally-on characteristics with a drain current of 0.35 A at VG = 0 V and VDS = 15 V. The recessed HEMT with 3 nm AlGaN layer exhibited a decreased drain current of 0.15 A under the same bias condition due to the decrease of electron concentration in 2DEG (2-dimensional electron gas) channel. For the last HEMT structure, distinctive normally- off behavior of the transistor was observed, and the turn-on voltage was shifted to 0 V.

Fabrication of Printed Graphene Pattern Via Exfoliation and Ink Formulation of Natural Graphite (천연흑연 박리를 통한 그래핀 잉크 생산 및 프린팅)

  • Gyuri, Kim;Yeongwon, Kwak;Ho Young, Jun;Chang-Ho, Choi
    • Clean Technology
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    • v.28 no.4
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    • pp.293-300
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    • 2022
  • The remarkable mechanical, electrical, and thermal properties of graphene have recently sparked tremendous interest in various research fields. One of the most promising methods to produce large quantities of graphene dispersion is liquid-phase exfoliation (LPE) which utilizes ultrasonic waves or shear stresses to exfoliate bulk graphite into graphene flakes that are a few layers thick. Graphene dispersion produced via LPE can be transformed into graphene ink to further boost graphene's applications, but producing high-quality graphene more economically remains a challenge. To overcome this shortcoming, an advanced LPE process should be developed that uses relatively cheap natural graphite as a graphene source. In this study, a flow-LPE process was used to exfoliate natural graphite to produce graphene that was three times cheaper and seven times larger than synthetic graphite. The optimal exfoliation conditions in the flow-LPE process were determined in order to produce high-quality graphene flakes. In addition, the structural and electrical properties of the flakes were characterized. The electrical properties of the exfoliated graphene were investigated by carrying out an ink formulation process to prepare graphene ink suitable for inkjet printing, and fabricating a printed graphene pattern. By utilizing natural graphite, this study offers a potential protocol for graphene production, ink formulation, and printed graphene devices in a more industrial-comparable manner.

Implementation and Verification for the Low RCS Characteristics of Active Phased Array Antenna (능동위상배열 안테나의 저피탐 특성 구현 및 검증)

  • Joung-Myoung Joo;;Heeduck Chae;Jongkuk Park;Young-Jo Choi;Hyeong-Ki Lee;Jeongyun Han;Jeong-Hwan Jeon
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.23 no.2
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    • pp.87-94
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    • 2023
  • As the latest weapon systems and electronic equipments are increasingly demanding stealth technology to improve the survivability of allies, it is necessary to implement low-observability technology that reduces the radar cross section(RCS). In order to implement this stealth technology, a method for low RCS characteristics by applying a shape design or a electromagnetic wave absorber is widely used. However, active phased array antennas have structural limitations in shape design, also when a absorber is applied to it, the performance of the antenna is degraded. Therefore, in this paper, in order to realize the low RCS characteristics of the active phased array antenna operating in the X-band, individual radiating elements suitable for applying the radio wave absorber were selected, and a 13x13 array antenna was designed and manufactured. Next, by comparing the measured results of the relative RCS and electrical performance for the manufactured antenna according to the presence and type of the absorber, it is shown that the electrical performance is maintained at an equal or higher level while obtaining the low RCS characteristics. Thereby the method proposed in this paper for implementing the low RCS characteristics was validated. Finally, it was confirmed that when the wave absorber is applied to the array antenna, the limitation of its performance deterioration can be overcome.

Improvement of Charge Carrier Mobility of Organic Field-Effect Transistors through The Surface Energy Control (표면 에너지 제어를 통한 유기 전계 효과 트랜지스터의 전하 이동도 향상)

  • Seokkyu Kim;Kwanghoon Kim;Dongyeong Jeong;Yongchan Jang;Minji Kim;Wonho Lee;Eunho, Lee
    • Journal of Adhesion and Interface
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    • v.24 no.2
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    • pp.64-68
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    • 2023
  • Organic field-effect transistors (OFETs) are attracting attention in the field of next-generation electronic devices, and they can be fabricated on a flexible substrate using an organic semiconductor as a channel layer. In particular, DPP-based semiconducting conjugated polymers are actively used because they have higher charge carrier mobility than other organic semiconductors, but they are still lower than inorganic semiconductors, so various studies are being conducted to improve the charge carrier mobility. In this study, the charge carrier mobility is improved by controlling the surface energy of the substrate by forming self-assembled monolayers (SAMs). As the surface energy of the substrate is controlled by the SAMs, the crystallinity increases, thereby improving the charge carrier mobility by 14 times from 3.57×10-3 cm2V-1s-1 to 5.12×10-2 cm2V-1s-1

Graphene Anode Material Technology Patent Trend Analysis for Secondary Battery (이차전지용 그래핀 음극소재 기술 특허 동향 분석)

  • Jae Eun Shin;Junhee Bae
    • Economic and Environmental Geology
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    • v.55 no.6
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    • pp.661-669
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    • 2022
  • The need for miniaturization, high efficiency, and green energy resources as an energy storage device through the development of various electronic device has emerged. Accordingly, nanomaterials with excellent electrochemical properties, such as graphene and graphene hybrids, are attracting attention as promising materials. In particular, in the electric vehicle industry, cost reduction of secondary batteries is a key factor that can determine the spread of related industries, and it is most important to analyze R&D trends for battery material technology and respond to future technological development directions. Therefore, in this study, we tried to suggest a direction for R&D activities in the future by analyzing patent trends for graphene anode material technology for secondary batteries and deriving implications. As a result, in the case of anode material technology, the proportion of foreigners in the US and European patent markets was higher than in the Korean and Japanese patent markets, which means that the US and European marketability is high. In addition, Japanese applicants are filing high-level applications not only in the Japanese patent market but also in other countries suggests that Japan is leading the technology in this field. Lastly, the proportion of research institutes in the patent market of Korea and the US remains high compared to that of Japan and Europe, indicating that the commercialization of technology is still slow in those countries. Therefore research institutes and companies in Korea will have to establish their own strategies for developing and securing materials using the results of patent trends in major countries and major companies analyzed in this study.

Study on the Fiber Alignment using Vacuum Filtration Method (Vacuum Filtration method를 이용한 단섬유(short fiber) 배열 영향성 분석)

  • Sung-Kwon Lee;Moo-Sun Kim;Ho-Yong Lee;Sung-Woong Choi
    • Composites Research
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    • v.36 no.3
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    • pp.162-166
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    • 2023
  • Although composite materials are increasingly utilized in general high-strength structures, the demand of performance characteristics as the multifunctional materials has been increased especially in the area of complex electronic devices. While the heat dissipation properties of devices are typically required properties, control of thermal property of composite material especially in the vertical direction is one of the problems to be solved due to its lamination process. In this study, CFRP was manufactured using the Vacuum filtration method for three types of solvent and CFs. In the composite material manufacturing process, the effect of solvent was examined using three solvents where solvents are most frequently used for the dispersion of fibers. Morphology of fiber was observed through a microscope to confirm the arrangement of CFs in the vertical direction. The alignment of fiber was examined through the measurement of the thermal conductivity of the manufactured specimen. For the thermal conductivity measurement, the higher thermal conductivity was obtained with the lower aspect ratio of CF. For the thermal conductivity in the through-plane direction, 8.687 W/m·K, 10.322 W/m·K, and 13.005 W/m·K of thermal conductivity was measured in the DMF, NMP and Acetone, respectively.

Field-effect Transistors Based on a Van der Waals Vertical Heterostructure Using CVD-grown Graphene and MoSe2 (화학기상증착법을 통해 합성된 그래핀 및 MoSe2를 이용한 반데르발스 수직이종접합 전계효과 트랜지스터)

  • Seon Yeon Choi;Eun Bee Ko;Seong Kyun Kwon;Min Hee Kim;Seol Ah Kim;Ga Eun Lee;Min Cheol Choi;Hyun Ho Kim
    • Journal of Adhesion and Interface
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    • v.24 no.3
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    • pp.100-104
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    • 2023
  • Van der Waals heterostructures have garnered significant attention in recent research due to their excellent electronic characteristics arising from the absence of dangling bonds and the exclusive reliance on Van der Waals forces for interlayer coupling. However, most studies have been confined to fundamental research employing the Scotch tape (mechanical exfoliation) method. We fabricated Van der Waals vertical heterojunction transistors to advance this field using materials exclusively grown via chemical vapor deposition (CVD). CVDgrown graphene was patterned through photolithography to serve as electrodes, while CVD-grown MoSe2 was employed as the pickup/transfer material, resulting in the realization of Van der Waals heterojunction transistors with interlayer charge transfer effects. The electrical characteristics of the fabricated devices were thoroughly examined. Additionally, we observed variations in the transistor's performance based on the presence of defects in MoSe2 layer.

A Study of Static Random Access Memory Single Event Effect (SRAM SEE) Test using 100 MeV Proton Accelerator (100 MeV 양성자가속기를 활용한 SRAM SEE(Static Random Access Memory Single Event Effect) 시험 연구)

  • Wooje Han;Eunhye Choi;Kyunghee Kim;Seong-Keun Jeong
    • Journal of Space Technology and Applications
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    • v.3 no.4
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    • pp.333-341
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    • 2023
  • This study aims to develop technology for testing and verifying the space radiation environment of miniature space components using the facilities of the domestic 100 MeV proton accelerator and the Space Component Test Facility at the Space Testing Center. As advancements in space development progress, high-performance satellites increasingly rely on densely integrated circuits, particularly in core components components like memory. The application of semiconductor components in essential devices such as solar panels, optical sensors, and opto-electronics is also on the rise. To apply these technologies in space, it is imperative to undergo space environment testing, with the most critical aspect being the evaluation and testing of space components in high-energy radiation environments. Therefore, the Space Testing Center at the Korea testing laboratory has developed a radiation testing device for memory components and conducted radiation impact assessment tests using it. The investigation was carried out using 100 MeV protons at a low flux level achievable at the Gyeongju Proton Accelerator. Through these tests, single event upsets observed in memory semiconductor components were confirmed.