• E2M - 전기 전자와 첨단 소재
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• 제14권4호
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• pp.8-15
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• 2001

• E2M - 전기 전자와 첨단 소재
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• 제13권7호
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• pp.1-7
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• 2000

• E2M - 전기 전자와 첨단 소재
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• 제13권7호
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• pp.14-24
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• 2000

• E2M - 전기 전자와 첨단 소재
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• 제12권3호
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• pp.10-17
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• 1999

• E2M - 전기 전자와 첨단 소재
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• 제23권12호
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• pp.29-36
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• 2010

• E2M - 전기 전자와 첨단 소재
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• 제12권5호
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• pp.17-20
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• 1999

• E2M - 전기 전자와 첨단 소재
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• 제12권5호
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• pp.21-25
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• 1999

• E2M - 전기 전자와 첨단 소재
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• 제25권4호
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• pp.20-27
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• 2012

• 한국전기전자재료학회논문지
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• 제32권6호
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• pp.516-521
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• 2019

The top seeded solution growth (TSSG) method is an alternative technique to grow high-quality SiC crystals that has been actively studied for the last two decades. However, the TSSG method has different issues that need to be resolved when compared to the commercial SiC crystal growing method, i.e., physical vapor transport (PVT). A particular issue of the TSSG method of results from the presence of liquid droplets on the grown crystal that can remain even after crystal growth; this induces residual stress on the crystal surface. Hence, the residual droplet causes several unwanted effects on the crystal such as the initiation of micro-cracks, micro-pipes, and polytype inclusions. Therefore, this study investigated the formation of the residual droplet through multiphysics simulations and lead to the development of a liquid droplet removal method. As a result, we found that although residual liquid droplets significantly apply residual stress on the grown crystal, these could be vaporized by adopting thermal annealing processes after the relevant crystal growing steps.

• 한국전기전자재료학회논문지
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• 제35권5호
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• pp.504-508
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• 2022

Single crystal gallium oxide (Ga₂O₃) has been an emerging material for power semiconductor applications. However, the defect distribution of Ga₂O₃ substrates needs to be carefully characterized to improve crystal quality during crystal growth. We analyzed the type and the distribution of defects on commercial (-201) Ga₂O₃ substrates to get a basic standard prior to growing Ga₂O₃ crystals. Etch pit technique was employed to expose the type of defects on the Ga₂O₃ substrates. Synchrotron white beam X-ray topography was also utilized to observe the defect distribution by a nondestructive manner. We expect that the observation of defect distribution with three-dimensional geometry will also be useful for other crystal planes of Ga₂O₃ single crystals.