• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.5
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• pp.197-205
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• 2015

The Diamond Like Carbon(DLC) films for the Electro Optical Tracking System(EOTS) by using Plasma Enhanced Chemical Vapor Deposition(PECVD) method is presented. We achieve that the DLC films can reduce the surface delamination of thermal observation sensor front window due to the high hardness, low friction and chemical inertness which is comparable to a Si film. According to our experiment results, DLC films can be used for various electro optical systems to eliminate surface delamination.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.48 no.3
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• pp.53-59
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• 2011

Charge transfer through DNA oligonucleotides has been investigated for potential applications of DNA into molecular electrooptic switching devices. Electrons were injected using gold electrode probes where DNA oligomers were adsorbed that are separated in medium. The results show that increased adsorption of DNA reduces the ionization current due to the combined effect of charge transfer through DNA and surface-limited charge transport. The probe-based charge injection was extended to examine the capability of extinguishing fluorescence of Cy3 dye molecules attached to DNA. It is expected that the results may be employed to implementing a novel electrooptic switching device based on DNA molecules.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.330-330
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• 2012

일반적으로 투명전극 재료로서 이용되는 Indium Tin Oxide (ITO)는 높은 전기전도도에도 불구하고, 가시광선 영역에서 높은 광학적 투과도를 지니고 있다. 즉, 비저항이 $10^{-3}{\Omega}/cm$ 보다 작으면서, 380 nm에서 780 nm사이의 가시광선 영역에서 80%이상의 투과도를 가지는 우수한 transparent conducting oxide 물질로 인식되고 있다. 또한 이 물질은 가시광선 영역에서의 굴절률이 대략 2정도이기 때문에, 다른 반도체재료와 진공사이의 계면에서 발생하는 반사를 줄여, 태양광전지나 LED 등에 이용될 수 있는 무반사 코팅재로 이용될 수 있다. 이러한 이유로 현재 각 분야에서 ITO에 관한 연구가 활발히 진행되고 있다. 본 연구에서는 ITO에 대한 기초연구로서, 전자빔 증착법으로 박막을 증착시키는 동안 증착속도에 따른 박막의 물성변화를 조사하였다. 또한 수직으로 증착할 때와 Glancing Angle Deposition 방법을 이용하였을 때, 증착속도에 따른 박막의 물성변화를 비교 분석하고자 하였다. 여기서, 증착속도는 $1{\AA}/s$에서 $4{\AA}/s$ 범위로 변화를 주었고, 증착물질과 기판의 각도는 $0^{\circ}$, $15^{\circ}$, $45^{\circ}$, $75^{\circ}$로 하였다. 먼저 수직으로 증착할 때, 증착속도의 변화에 따른 반사도, 투과도 및 굴절률과 증착단면의 구조를 비교하고, 다음으로 기판에 각도를 주어 박막을 증착하였을 때의 증착속도에 따른 박막의 광학적 및 구조적 물성의 변화를 측정하였다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.8
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• pp.589-597
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• 2003

Visual cryptography made it possible to decrypt thresholding scheme with not digital system but human vision system. This method, however, has some limit in it. Optical visual cryptography was proposed which used laser instead of human eyesight. As a result, it was possible to adapt cryptography to optical system. However, it also had some difficulties because it did not overcome the existing problem of visual cryptography completely. These problems occurred in the process of transferring data processing system from visual to optics. Therefore, it is appropriate to approach these problems in terms of optics. This paper analyzes the level of noise and the security characteristics for optical visual cryptography in terms of frequency based on joint transform correlator.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.1
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• pp.67-70
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• 2022

In the present work, we have designed to optimize the optical filter structures of the 1-dimensional photonic quasicrystals (1D PQCs) characteristic for the COVID-19 UV sterilization. The simulator using MATLAB program and ourselves manufacturing calculation codes. After making the aperiodic (and complexed) multi-layer structure model, we establish the transfer matrix method (TMM) for model by the operator conversion. By the using the MATLAB, we derive a matrix for the designed complexed multi-layer structure by applying the equations to the model by obtaining the reflectance and transmittance from the matrix. We also prove the possibility of application in optical filter for UV sterilization.

• Korean Journal of Optics and Photonics
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• v.33 no.6
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• pp.275-286
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• 2022

As a first step in the optical design process, we derive a recursive numerical calculation method that can give a solution to the Gaussian equation that the paraxial rays satisfy. Given the refractive power, the angle of incidence to the first principal plane of the lens, the angle of exit to the second principal plane of the lens, and the distance between the principal planes, the radii of curvature of the front and back surfaces of a lens can be obtained by applying the recursive numerical calculation method proposed in this paper according to the thickness of the lens. If a module consists of two or more lenses, the thickness and radius of curvature of each lens can be similarly determined after selecting the distance between the principal planes of the lens under the condition of the design specification while increasing the number of lenses one by one.

• Electrical & Electronic Materials
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• v.6 no.5
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• pp.454-460
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• 1993

본 연구에서는 준강유전 특성을 갖는 xBa(L $a_{1}$2/N $b_{1}$2/) $O_{3}$- (1-x)Pb(Z $r_{y}$ $Ti_{1-y}$) $O_{3}$ (x=8.5, 9.0[mol.%], y=65, 70[mol.%]) 세라믹을 2단 소성법으로 제작한 후, 조성 및 인가전계에 따른 전기광학 특성 및 광변조 특성을 측정하였다. 인가전계가 증가함에 따라 8.5/65/35 시편을 제외한 전조성에서 유효복굴절이 2차 함수적으로 변화하는 2차 전기광학 특성을 나타내었으며 2차 전기광학계수, 반파장전압 및 ON-OFF ratio는 9.0/65/35 시편에서 각각 6.17x$10^{-16}$[ $m^{2}$/ $v^{2}$], 136[V], 252의 가장 우수한 값을 나타내었다. 9.0/70/30, 9.0/65/35 및 8.5/70/30 시편에 대해 광변조 특성을 측정한 결과, 입사광의 세기를 인가전압에 의해 변조시킬 수 있음을 관찰하였다.다.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.445-449
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• 1996

Structural and optical characteristics in Se thin film fabricated by EBE method had been studied. Se thin film was deposited with noncrystalline until substrate temperature of >$100^{\circ}C$ Color of its surface had red genealogy, and its optical energy band gap was about 2.45 eV. But Se film was grown with monoclinic at substrate temperature of over >$150^{\circ}C$ Also, color of its surface had gray genealogy, and its optical energy band gap was about 2.31 eV. Finally, after heat-treatment at >$150^{\circ}C$ for 15 min with substrate temperature of >$100^{\circ}C$ noncrystalline Se was proved to be hexagonal, and color of its surface had dark gray genealogy, and its optical energy band gap was about 2.06 eV. From the results, it was known that Se thin film for photoelectric device with the lowest optical energy band gap was accepted from hexagonal structure.

• Electronics and Telecommunications Trends
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• v.24 no.5
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• pp.119-132
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• 2009

새로운 전파자원으로서 초고속 무선통신뿐만 아니라 분광, 센싱, 이미징 등 여러 분야에서 다양한 응용이 기대되는 연속 밀리미터파와 테라헤르츠-파에 대한 발생 및 응용기술을 논하였다. 밀리미터파의 경우 전자소자를 이용한 방법을 주로 사용하지만, 테라헤르츠-파는 전자 및 광기술을 모두 사용하여 발생시킬 수 있다. 본 글에서는 광학적 방식을 이용한 연속 밀리미터/테라헤르츠-파의 발생기술과 이를 이용한 응용기술에 대하여 논하였다. 최근 고출력 PD의 기술발전에 따라 광학적 발생방식의 밀리미터/테라헤르츠-파를 이용한 CW 분광 측정이 유용할 것으로 보인다. 현 단계에서 1THz에서의 최대 가용 출력은 약 $10{\mu}W$ 정도이나, 포화전류와 열 관리 문제를 해결하고 PD 성능의 개선을 함으로써, 단일 소자에서 1THz에 대한 최대 가용출력이 $100{\mu}W$ 수준이 될 것으로 기대된다. 연속 밀리미터/테라헤르츠-파 분광법은 더욱 정밀하고, 다양하며 경제적인 분광 시스템 기술에 크게 기여할 것으로 전망된다.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.51-57
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• 2008

we have demonstrated structural evolution and optical properties of Si-nanowires (NWs) synthesized on Si (111) substrates with nanoscale Au-Si islands by rapid thermal chemical vapor deposition (RTCVD). The Au-Si nano-islands (10-50nm in diameter) were employed as a liquid-droplet catalysis to grow Si-NWs via vapor-liquid-solid mechanism. The Si-NWs were grown by a mixture gas of SiH4 and H2 at a pressure of 1.0 Torr and temperatures of $500{\sim}600^{\circ}C$. Scanning electron microscopy measurements showed that the Si-NWs are uniformly sized and vertically well-aligned along <111> direction on Si (111) surfaces. The resulting NWs are ${\sim}60nm$ in average diameter and ${\sim}5um$ in average length. High resolution transmission microscopy measurements indicated that the NWs are single crystals covered with amorphous SiOx layers of ${\sim}3nm$ thickness. In addition, the optical properties of the NWs were investigated by micro-Raman spectroscopy. The downshift and asymmetric broadening of the Si main optical phonon peak were observed in Raman spectra of Si-NWs, which indicates a minute stress effects on Raman spectra due to a slight lattice distortion led by lattice expansion of Si-NW structures.