• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.10
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• pp.678-686
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• 2001

Origins for the transconductance dispersion and the gate leakage current in a GaAs metal semiconductor field effect transistor were found using capacitance deep-level transient spectroscopy (DLTS) measurements. In DLTS spectra, we observed two surface states with thermal activation energies of 0.65 $\times$ 0.07 eV and 0.88 $\times$ 0.04 eV and an electron trap EL2 with thermal activation energy of 0.84 $\times$ 0.01 eV. Transconductance was decreased in the frequency range of 5.5 Hz ~ 300 Hz. The transition frequency shifted to higher frequencies with the increase of temperature and the activation energy for the change of the transition frequency was determined to be 0.66 $\times$ 0.02 eV. From the measurements of the gate leakage current as a function of the device temperature, the forward and reverse currents are coincident with each other below gate voltages lower than 0.15 V, namely Ohmic behavior between gate and source/drain electrodes. The activation energy for the conductance of electrons on the surface of MESFET was 0.63 $\times$ 0.01 eV. Comparing activation energies obtained by different measurements, we found surface states H1 caused the transconductance dispersion and the fate leakage current.

• Proceedings of the KIEE Conference
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• 2007.04b
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• pp.46-48
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• 2007

수분은 변압기의 절연 상태를 악화시키고 결국은 권선의 단락이나 1, 2차간의 절연 파괴로 이어져 변압기 고장의 주요 원인이 된다. 본 논문에서는 변압기의 절연물인 절연지와 절연유에 대해서 회복전압 측정법을 이용한 열화상태 진단에 대한 측정을 통해 변압기내에 존재하는 수분의 온도 특성을 실험했다. 실험 결과 변압기내 온도에 따른 수분은 절연유보다 절연지의 영향을 크게 받는 것으로 나타났고, 이는 변압기에 사용된 절연지인 셀룰로오스계 절연지의 수분 흡착성이 강하고, 온도가 증가함에 따라 수분을 생성하는 특성 때문인 것으로 판단되었다.

• Electrical & Electronic Materials
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• v.4 no.3
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• pp.259-266
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• 1991

1.5.mu.m의 찬넬길이를 갖는 short channel 비휘발성 SNOSFET 기억소자를 기존의 CMOS 1 Mbit 공정기술을 이용하여 제작하고 I$_{d}$-V$_{d}$ 및 I$_{d}$- V$_{g}$특성과 스윗칭 및 기억유지특성을 조사하였다. 그 결과 제작한 소자는 논리회로 설계에 적절한 전도특성을 가졌으며 스윗칭시간은 인가전압의 크기에 의존함을 보였다. 그리고 3V의 memory window 크기를 얻기 위해서 V$_{w}$ =+34V, t$_{w}$ =50.mu.sec 및 V$_{e}$=-34V, t$_{e}$=500.mu.sec의 펄스전압으로 각각 write-in과 erase할 수 있었다. 또한 기억상태는 10년이상 유지할 수 있음을 알 수 있었다.

• Proceedings of the KIPE Conference
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• 2005.07a
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• pp.305-307
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• 2005

본 연구는 순수 국내기술로 개발된 국산화 전동차 광주도시철도 1호선의 추진제어 장치의 본선시운전에 관한 것으로, 외국기술에 의존해온 추진 제어장치를 국내기술로 설계하고 본선시운전을 통하여 추진제어장치의 신뢰성 및 안정성에 관하여 실험을 실시하였다. 그리고 추진제어 장치에 적용한 알고리즘은 필터 사이즈를 감소하기위하여 기존의 패턴에 의한 PWM방식을 사용치 않고, 출력전류의 고조파 리플이 적은 저주파 동기 공간벡터 PWM 알고리즘을 제안하고, 가선전압의 변동에 강인한 댐핑 제어 및 과전압 제한 제어 알고리즘을 제시하고, 제안된 알고리즘은 본선시운전을 통하여 타당함을 확인하였다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.11B
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• pp.1631-1639
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• 2010

This paper proposes a scheduling algorithm that can reduce the power consumed for execution of application programs and the communication cost incurred due to dependencies among tasks. The proposed scheduling algorithm can increase energy efficiency of the DVS(Dynamic Voltage Scaling) by estimating laxity usage during scheduling, making up for conventional algorithms that apply the DVS after scheduling. Energy efficiency can be increased by applying the proposed algorithm to complex multimedia applications. Experimental results show that energy consumptions for executing HD MPEG4, MotionJPEG codec, MP3, and Wavelet have been reduced by 11.2% on the average, when compared to conventional algorithms.

• Journal of the Korean Magnetics Society
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• v.10 no.3
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• pp.118-122
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• 2000

MR characteristics of $Al_2$ $O_3$ based magnetic tunneling juction with various $Al_2$ $O_3$ thicknesses were investigated. Spin-dependent tunneling junctions, in which the tunneling barrier $Al_2$ $O_3$ is formed by depositing a 1-3 nm thick Al layer, followed by thermal oxidation at room temperature in an $O_2$atmosphere, were fabricated on 4$^{\circ}$tilt(111)Si substrate in 3-gun magnetron sputtering system. The top and bottom ferromagnetic electrodes were Ni$_{80}$Fe$_{20}$ and Co. A maximum Tunneling MR ratio of 14% was obtained in the junction of which insulating barrier thickness was 2 nm. By increasing the tunneling voltage across the junction, maximum MR ratio reduced and finally showed no MR characteristics.s.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.8
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• pp.109-115
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• 2008

A design criterion of grounding systems is commonly based on the ground resistance measured with low frequency in Korea. When lightning surges which have high frequency components are injected into the grounding system, the grounding impedance is great]y different from the static grounding resistance. In order to investigate the effect of water resistivity on the high frequency performance of grounding systems, this paper presents the frequency-dependent admittance using water tank simulating the grounding system in different water resistivities. As a result, because of capacitive effect admittances and conductance are increased with increasing frequency in higher water resistivity of greater than 500[${\Omega}{\cdot}m$]. On the other hand, admittances and conductances are decreased with increasing frequency due to inductive effect in lower water resistivity of less than 500[${\Omega}{\cdot}m$]. The phase difference between the current and voltage increases in the range of 200[kHz] to 5[MHz]. Consequently, frequency-dependent performance of grounding systems is closely related to the soil resistivity, it is necessary to consider the effect of grounding system performance on the frequency and soil resistivity.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.12
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• pp.1008-1015
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• 2002

The fabricated La-modified lead titanate (PLT) thin film without poling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{l-x}La_{x}Ti_{l-x/4}O_3$(x=0.1) (PLT(10)) thin film haying 10 mol% La content was deposited on a Pt/$TiO_{x}$/$SiO_2$/Si substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is 6.6 x $10^{-9}C$$textrm{cm}^2$$.$K without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are 1.03 x $10^{-11}C$.cm/J and 1.46 x $10^{-10}C$.cm/J, respectively The PLT(10) thin film has voltage responsivity (RV) of 5.IS V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity ($D^{*}$) of the PLT(10) thin film are 9.93 x $10^{-8}$W/$Hz^{1/2}$ and 1.81 x $10^{6}$cm.$Hz^{1/2}$/W at the same frequency of 100 Hz,, respectively The results means that PLT thin film having 10 mol% La content is suitable for the sensing materials of pyroelectric IR sensors.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.180-185
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• 2006

Microwatt power level at relatively high voltage(order of volt) was produced by $Bi_{0.5}Sb_{1.5}Te_{3}/Bi_{2}Te_{2.4}Se_{0.6}$ thin film thermoelectric generators, and maximum output power varied with temperature difference in the square-law relation. Output voltage and current were possible to control by changing the way of electrical connection as well as the number of stacking plate-modules. Variation of open circuit voltage and short circuit current with temperature difference showed a linear relationship. There were, however, some differences in variations; open circuit voltage were dependent on the number of plate-module when connected in series, but it was not for parallel connection. On the other hand, short circuit current showed the opposite behavior to the case of open circuit current.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.4
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• pp.805-810
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• 2016

The dependence of drain induced barrier lowering(DIBL) is analyzed for doping concentration in channel of asymmetric double gate(DG) MOSFET. The DIBL, the important short channel effect, is described as lowering of source barrier height by drain voltage. The analytical potential distribution is derived from Poisson's equation to analyze the DIBL, and the DIBL is observed according to top/bottom gate oxide thickness and bottom gate voltage as well as channel doping concentration. As a results, the DIBL is significantly influenced by channel doping concentration. DIBL is significantly increased by doping concentration if channel length becomes under 25 nm. The deviation of DIBL is increasing with increase of oxide thickness. Top and bottom gate oxide thicknesses have relation of an inverse proportion to sustain constant DIBL regardless channel doping concentration. We also know the deviation of DIBL for doping concentration is changed according to bottom gate voltage.