• Journal of the Korean Ceramic Society
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• v.39 no.10
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• pp.935-942
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• 2002

Gallium-doped ZnO (GZO) films were deposited on soda-lime glass substrate without heating using Ne, Ar, or Kr gas. Electrical properties of GZO films deposited at various total gas pressures were investigated for the film positions corresponding to the erosion region (region B) and outside the erosion region (region A) of the target. Region B showed high resistivity, which was attributed to the decrease in carrier density and Hall mobility, compared to region A. GZO films deposited using Ne gas showed the degradation in resistivity and crystallinity, whereas, GZO films deposited using Kr gas showed the improvement in resistivity and crystallinity. This degradation in film properties could be attributed to the film damage caused by the bombardment of high-energy particles. Especially, the energies of recoiled neutral atoms ($Ne^0,\;Ar^0,\;Kr^0$) calculated by Monte Carlo simulation corresponded to experimental results.

• Transactions of the KSME C: Technology and Education
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• v.3 no.4
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• pp.249-255
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• 2015

Functional nanochannels were fabricated in order to control selective ion transportation with high permeability and low energy consumption. In this research, nanochannel platform fabrication process and surface functionalization process were developed. In addition, selective ion transportation and concentration measurement system was also set-up. By using fabricated multilayer metal membrane with electrical bias, 95% of ion ($Cl^-$) was blocked. This developed process is new-conceptional membrane fabrication technology and is expected to be applied to next-generation water purification/desalination, portable artifical kidney, and artificial sense organ.

• Journal of the Korean Society for Nondestructive Testing
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• v.21 no.3
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• pp.281-287
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• 2001

For the conventional two-dimensional source location of acoustic emission (AE) based on the threshold crossing, wave velocity has to be measured in the actual structure to calculate the arrival-time difference and thus to form the two hyperbolae. Velocity is dependent on the fiber orientation, however, due to the dependence of elastic modulus on fiber orientation in anisotropic materials such as compost#e plates. This tan affect the accuracy of AE source location and make the source location procedure complicated. In this study, we propose a method to reduce the location error in anisotropic plates by using the numerical solution of nonlinear equations, where the velocity term has been removed by employing the fourth sensor. The efficiency and validity of the proposed method has also been experimentally verified.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.14 no.5
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• pp.231-236
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• 2014

With the development of industry these days, the demand for electric power increases and the larger capacity for power transfer is required. The scales of facilities should become larger; and the relative systems are required to operate with a higher degree of reliability. Therefore, stabilization of electric power systems is an important issue. The high degree of reliability required in the process of production and supply of electric power is an essential part of industrial society. Accident such as blackouts causes a hugh amount of economic losses to the high-tech industrial society dependent upon electric power. In this paper, in order to determine a stable operation of high-voltage power cable, used as a unique means of delivering electric power generated at a power station, we figure out the time rate of change of insulation resistance following a decay accelerating factor Arrhenius equation. With the data from the insulation resistance, we can determine the lifetime of power cable in operation.

• Journal of the Korean Magnetics Society
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• v.16 no.3
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• pp.186-191
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• 2006

Ferromagnetic amorphous $Ni_{16}Fe_{62}Si_8B_{14}$ and $Co_{70.5}Fe_{4.5}Si_{15}B_{10}$ layers have been devised and incorporated as free layers of magnetic tunnel junctions (MTJs) to improve MRAM reading and writing performance. The NiFeSiB and CoFeSiB single-layer film exhibited a lower saturation magnetization ($Ms=800emu/cm^3,\;and\;560emu/cm^3$, respectively) compared to that of a $Co_{90}Fe_{10}(Ms=1400emu/cm^3)$. Because amorphous ferromagnetic materials have lower Ms than crystalline ones, the MTJs incorporating amorphous ferromagnetic materials offer lower switching field ($H_{sw}$) values than that of the traditional CoFe-based MTJ. The double-barrier MTJ with an amorphous NiFeSiB free layer offered smooth surface resulting in low bias voltage dependence, and high $V_h\;and\;V_{bd}$ compared with the values of the traditional CoFe-based MTJ.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.6
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• pp.4013-4018
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• 2014

A 0.45 $cm^2$ DSSC device with a glass/FTO/blocking layer/$TiO_2$/N719(dye)/electrolyte/50 nm-Pt/50 nm-Au/FTO/glass was prepared to examine the stability of the Au/Pt bilayered counter electrode (CE) with electrolyte and the energy conversion efficiency (ECE) of dye-sensitized solar cells (DSSCs). For comparison, a 100 nm-thick Pt only CE DSSC was also prepared using the same method. The photovoltaic properties, such as the short circuit current density ($J_{sc}$), open circuit voltage ($V_{oc}$), fill factor (FF), and ECE, were checked using a solar simulator and potentiostat with time after assembling the DSSC. The microstructure of the Au/Pt bilayer was examined by optical microscopy after 0~25 minutes. The ECE of the Pt only CE-employed DSSC was 4.60 %, which did not show time dependence. On the other hand, for the Au/Pt CE DSSC, the ECEs after 0, 5 and 15 minutes were 5.28 %, 3.64 % and 2.09 %, respectively. The corrosion areas of the Au/Pt CE determined by optical microscopy after 0, 5, and 25 minutes were 0, 21.92 and 34.06 %. These results confirmed that the ECE and catalytic activity of Au/Pt CE decreased drastically with time. Therefore, a Au/Pt CE-employed DSSC may be superior to the Pt only CE-employed one immediately after integration of the device, but it would degrade drastically with time.

• Journal of the Korean Ceramic Society
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• v.39 no.12
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• pp.1128-1132
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• 2002

$ReMnO_3$(Re:Y, Ho, Er) thin films were prepared by MOCVD method available to non-volatile memory device with MFS-FET structure. $ReMnO_3$ thin films were deposited on the Si(100) substrate at 700${\circ}C$ for 2h. When the films were post-annealed at 900${\circ}C$ for 1h in air, the single phase of hexagonal $ReMnO_3$ thin films were detected. Ferroelectric properties of $ReMnO_3$ thin films were dependent on the degree of c-axis orientation in the single phase of hexagonal structure and remnant polarization (Pr) of $YMnO_3$ thin films with high degree of c-axis orientation was 105 nC/$cm^2$. Leakage current density was dependent on the grain size of microstructure and that of $YMnO_3$ thin films with grain size of 100∼150 nm was $10^{-8}$ A/$cm^2$ at applied voltage of 0.5 V.

• Journal of Korea Society of Industrial Information Systems
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• v.22 no.1
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• pp.53-59
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• 2017

This Paper Proposes a New High-speed Design Methodology for Delay Insensitive Asynchronous Circuits Combining with a Pseudo-NMOS Structure used for High Performance in Synchronous Circuits. Null Convention Logic(NCL) of Conventional Delay-Insensitive Asynchronous Design Methodologies has many Advantages of High Reliability, Low Power Consumption, and Easy Design Reuses not Dependant on Semiconductor Technology. However. the Conventional NCL Gates has a Complicated Stack Structure, so it Suffers from Increased Circuit Delay. Therefore, a New NCL Gates and its Pipeline Structure for High Performance, and the Proposed Methodology has been Designed and Evaluated by a $4{\times}4$ Multiplier Designed using SK-Hynix 0.18 um CMOS Technology. The Experimental Results are Compared with a Conventional NCL in Terms of Power and Delay and shows that the Propagation Delay of the Proposed Multiplier is Reduced by 85% Compared with the Conventional NCL Multiplier.

• Journal of the Korean Vacuum Society
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• v.6 no.2
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• pp.151-158
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• 1997

Nitrogen incorporated diamond-like carbon films were deposited by r.f. glow discharge of mixtures of benzene and ammonia gases. Mechanical properties, composition and atomic bond structure were investigated when the fraction of ammonia increases from 0 to 0.79 and the negative self bias voltage of cathode from 100 to 900 V. Both the residual compressive stress and the hardness decrease from 1.7 to 1.0 GPa and from 2750Kgf/$\textrm{mm}^2$ to 1700Kgf/$\textrm{mm}^2$, respectively. In addition to hydrogen, triply bonded nitrogens also play a role of teminal sites of the three dimensional atomic bond network. By considering the hydrogen concentration and the nitrogen bond characteristics, it can be shown that the mechanical properties of the films are determined by the content of three dimensional inter-links of $sp^2$ clusters. Although the mechanical properties are affected by the nitrogen addition, its depedence on the negative bias voltage is qualitatively identical to that of pure diamond-like carbon films.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.238-239
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• 2011

최근 반도체 산업은 더 높은 성능의 회로 제작을 통해 초고집적화를 추구하고 있다. 이를 위해서 회로 설계의 최소 선폭과 소자 크기는 지속적으로 감소하고 있고 이를 위한 배선 기술들은 플라즈마 공정을 이용한 식각공정에 크게 의존하고 있다. 식각공정에 있어서 반응가스의 조성은 식각 속도와 선택도를 결정하는 중요한 요소이다. 본 연구에서는 CIS QMS (closed ion source quadrupole mass spectrometer)를 이용하여 CF4+Ar를 이용한 실리콘 산화막의 플라즈마 식각 공정 시 생성되는 라디칼과 이온 종들을 측정하였다. Ar 이온이 기판표면과 충돌하여 기판물질간의 결합을 깨놓으면, 반응성 기체 및 라디칼과의 반응성이 커져서 식각 속도를 향상 시키게 된다. 본 실험에서는 2 MHz의 RPS (remote plasma source)를 이용하여 플라즈마를 발생시키고 13.56 MHz의 rf 전력을 기판에 인가하여 식각할 웨이퍼에 바이어스 전압을 유도하였다. CF4/(CF4+Ar)의 가스 혼합비가 커질수록 식각 부산물인 SiF3의 양은 증가 하였으며, CF4 혼합비가 0일 때(Ar 100%) 비하여 1일 때(CF4 100%) SiF3의 QMS 이온 전류는 106배 증가하였다. 이때의 Si와 결합하여 SiF3를 형성하는 F라디칼의 소모는 0.5배로 감소하였다. 또한 RPS power가 800 W일 때 플라즈마에 의해서 CF4는 CF3, CF2, CF로 해리 되며 SiO2 식각 시 라디칼의 직접적인 식각과 Si_F2의 흡착에 관여되는 F라디칼의 양은 CF3 대비 7%로 검출되었고, 식각 부산물인 SiF3는 13%로 측정되었다. Ar의 혼합비를 0 %에서 100%까지 증가시켜 가면서 측정한 결과 F/CF3는 $1.0{\times}105$에서 $2.8{\times}102$로 변화하였다. SiF3/CF3는 1.8에서 6.3으로 증가하여 Ar을 25% 이상 혼합하는 것은 이온 충돌 효과에 의한 식각 속도의 증진 기대와는 반대로 작용하는 것으로 판단된다.