• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.17 no.10
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• pp.983-992
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• 2007

It was proposed to identify Thiele Small Parameters for loudspeaker attached to closed-box using known dynamic mass of moving parts. Also, enhanced PSPICE circuit model for closed-box loudspeaker system was proposed to more accurately simulate real closed-box loudspeaker system. Frequency dependent parameters were used to model voice coil inductor. Acoustic pressure response curves and electrical impedance curves were simulated and investigated by PSPICE circuit model according to compensation filter's parameters. Finally, proposed method is expected to be utilized for identification of pseudo Thiele Small parameters of microspeaker.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.17 no.8
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• pp.757-765
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• 2007

Enhanced PSPICE circuit model for vented-box loudspeaker system with lumped parameters was proposed to more accurately simulate real vented-box loudspeaker system. Frequency dependent parameters were used to model voice coil inductor. Acoustic pressure response curves and electrical impedance curves were simulated and investigated by PSPICE circuit model according to circuit parameters' variations. Finally, it was used to identify faults detection in woofers manufactured by unskilled persons.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.10
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• pp.62-66
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• 2011

In this study, a new RF method to extract the drain-source voltage Vds-dependent gate-bulk capacitance of deep-submicron MOSFETs is developed by determining Vds-independent gate-source overlap capacitance using measured S-parameters. The accuracy of extraction method is verified by observing good agreements between the measured and modeled S-parameters. The lateral channel doping profile in the drain region is experimentally measured using a Vds-dependent curve of the overlap and depletion length obtained from the extracted data.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.9
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• pp.55-59
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• 2013

A new method using RF Ids determined from measured S-parameters is proposed to extract the gate-voltage dependent effective carrier velocity of bulk MOSFETs in the saturation region without additional dc Ids measurement data suffering parasitic resistance effect that becomes larger with continuous down-scaling to sub-$0.1{\mu}m$. This method also allows us to extract the carrier velocity in the saturation region without the difficult extraction of bias-dependent parasitic gate-source capacitance and effective channel length. Using the RF technique, the electron velocity overshoot exceeding the bulk saturation velocity is observed in bulk N-MOSFETs with a polysilicon gate length of $0.065{\mu}m$.