• Journal of the Korea Institute of Information and Communication Engineering
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• v.3 no.2
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• pp.305-311
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• 1999

In this paper, it is designed a new type single layer patch antenna which is printed on a very thin film and separated from the ground-plane by foam with a low permitivity of 1.06 and a high thickness of around quarter wavelength. It allows the use of three-dimensional transition, from one level to another, so that its bandwidth can be enhanced by wideband impedance matching. The radiation pattern, return loss, and VSWR of the antenna are calculated using "IE3D" simulation package, and compared with the experimental results. Experimental results show that the bandwidth is about 65% of center frequency 6.8 GHz, return loss and VSWR are in a fairly good agreement with the calculations.culations.

• Journal of Advanced Navigation Technology
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• v.22 no.1
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• pp.31-36
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• 2018

In this paper, we designed and implemented an ultra wideband(UWB) antenna with band rejection characteristics. The proposed antenna consists of a planar radiation patch with slots and ground planes on both sides. Due to the slots in the radiation patch, the antenna shows band rejection characteristics. U-type slot contributes for wireless local area network(WLAN, 5.15~5.825 GHz) band rejection and n-type slot contributes for X-Band(7.25~8.395 GHz) band rejection. To make voltage standing wave ratio(VSWR) less than 2.0 for UWB frequency band except rejection bands, the shapes of planar radiation patch and ground plane was modified. The Ansoft 's high frequency structure simulator(HFSS) was used for the design process and simulations of the proposed antenna. The simulated antenna showed VSWR less than 2.0 for all UWB band excepts for dual rejection bands of 5.15 ~ 5.94 GHz and 7.02 ~ 8.45 GHz. And measured VSWR for the implemented antenna is less than 2.0 for all UWB band of 3.10~10.60 GHz excluding dual rejection bands of 5.12~5.95 GHz and 7.20~8.58 GHz.

• Proceedings of the Korean Nuclear Society Conference
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• 1997.05b
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• pp.577-582
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• 1997

KSTAR 토카막$^1$플라즈마의 전류구동을 위한 RF 안테나 설계시 최적 조건을 2차원 파동 코드와 안테나 모듀울(module)을 이용하여 연구하였다 최적 조건을 얻기 위해 플라즈마와 안테나 매개변수 각각에 대한 부하와 전압정재파비(VSWR)의 관계를 살펴보았다. 계산결과로부터, 송전선의 특성저항 $R_{c}$=50$\Omega$, 안테나 폴로이달(poloidal) 길이 $A_{pl}$ =1.0m, 안테나 사이의 간격 $w_{d}$=4$^{0}$ 근처에서 최적의 안테나 조건을 갖음을 알 수 있었다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.8
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• pp.781-787
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• 2004

In this paper, a novel dual and wide band aperture stacked patch antenna for Cellular/PCS/IMT-2000 base station is presented. It consists of single microstrip patch having notches along the radiating patch, two dielectric substrates and a form material. To achieve wide band characteristic, we utilize the coupling effect between the notched patch and the resonant aperture in the ground plane and by properly cutting notches on the patch, an aperture stacked patch antenna could be designed to yield dual frequency operation. By the proper choice of resonant aperture size and height of a foam material, dual and wide band characteristic could be realized the measured impedance bandwidth(1:1.5 VSWR) of designed antenna at lower band(860 MHz) reaches 77 MHz and covers the Cellular CDMA band(824∼894 MHz). The measured impedance bandwidth(1:1.5 VSMR) of the designed antenna at upper band(1,960 MHz) is about 550 MHz and covers both the PCS band(1,750∼l,870 MHz) and the for-2000 band(1,920∼2,170 MHz). Good broadside radiation with high gain(5.65∼7.4 dBi) characteristics have also been observed.

• Journal of Korea Society of Industrial Information Systems
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• v.6 no.4
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• pp.48-53
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• 2001

A three-stage low noise amplifier(LNA) for the Base-station of the IMT-2000 is designed and implemented. In the first stage, a GaAs HJt-FET which has good noise characteristics is made use of. Monolithic microwave integrated circuits(MMICS) are used in the second and the third stage to achieve both the high gain and high output power. Although the balanced amplifier is used to reduce the input VSWR, it is done only in the first stage because we have to minimize the noise figure attributed to the phase difference of the balanced amplifier. It is shown that the implemented LNA has the gai over 39.74dB, the gain flatness less than ±0.4dB, the noise figure below 0.97dB, input and output VSWRs less than 1.2, and OIP₃(output third order intercept point) of 38.17dBm in the operating frequency range.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.354-358
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• 2000

T-모양의 급전구조를 갖는 마이크로스트립 슬롯 안테나는 정합을 쉽게 이룰 수 있고, 대역 폭이 기존의 슬롯을 가로지르는 급전구조에 비하여 넓었다. 본 논문에서는 역 L-형 마이크로스트립 급전구조를 제안하여 FDTD(Finite Difference Time Domain)법으로 해석하여 안테나를 최적화 설계하였다. 슬롯 폭이 16 mm일 때, 전압 정재파비가 2.0 이하인 조건에서 대역폭은 2.3 GHz를 중심으로 약 48 % 정도의 광대역 특성을 얻었다. 제안된 급전구조는 기존의 슬롯 가로지르는 급전구조의 복사 저항보다 매우 낮았다. 또한 역 L-형 급전구조의 대역폭 특성을 기존의 급전구조의 슬롯릇 안테나들과 비교하였다.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.37 no.3
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• pp.35-42
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• 2000

A cross-shaped microstripline-fed printed slot antenna having wide bandwidth Is presented in this paper. The proposed antenna is analyzed by using the Finite-Difference Time-Domain (FDTD) method. It was found that the bandwidth of the antenna depends highly on the length of the horizontal and vertical feedline as well as the offset position of the feedline. The maximum bandwidth of this antenna is from 1.975 GHz to 4.725 GHz, which is approximately 1.3 octave, for the VSWR $\leq$ 2. Experimental data for the return loss and the radiation pattern of the antenna are also presented. and they are in good agreement with the FDTD results.e FDTD results.

• Journal of Navigation and Port Research
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• v.28 no.3
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• pp.213-219
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• 2004

In this paper, a LNA(Low Noise Amplifier) has been developed, which is operating at L-band i.e., 1452∼1492 MHz for satellite DAB(Digital Audio Brcadcasting) receiver. The LNA is designed to improve input and output reflection coefficient and VSWR(Voltage Standing Wave Ratio) by balanced amplifier. The LNA consists of low noise amplification stage and gain amplification stage, which make a using of GaAs FET ATF-10136 and VNA-25 respectively, and is fabricated by hybrid method. To supply most suitable voltage and current, active bias circuit is designed Active biasing offers the advantage that variations in $V_P$ and $I_{DSS}$ will not necessitate a change in either the source or drain resistor value for a given bias condition. The active bias network automatically sets $V_{gs}$ for the desired drain voltage and drain current. The LNA is fabricated on FR-4 substrate with RF circuit and bias circuit, and integrated in aluminum housing. As a reults, the characteristics of the LNA implemented more than 32 dB in gain. 0.2 dB in gain flatness. lower than 0.95 dB in noise figure, 1.28 and 1.43 each input and output VSWR, and -13 dBm in $P_{1dB}$.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.223-226
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• 2002

본 논문에서는 프로브 급전 방식을 사용하여 무선 LAN용 주파수 대역인 2.4GHz와 5.775GHz 대역에서 동작하는 이중공진 패치 안테나를 설계 및 제작하였다. 이 때 상대급전의 임피던스 변화를 최소화하기 위하여 50$\Omega$ 급전위치를 찾아 설계하였으며, 각 소자간의 영향을 고려하여 충분한 거리를 두어 실험하였다. 안테나 성능 전산모의실험에는 Ensemble을 사용하였다 또한 5.775GHz 대역의 임피던스를 정합하기 위하여 접지와 단락을 시켰으며, 2.4GHz 대역의 임피던스를 정합하기 위하여 패치 모양을 변화시켰다. 측정된 결과를 보면 2.4GHz, 5.775GHz 대역에서 반사손실은 각각 -l4㏈, -l2㏈의 값을 나타냈으며, 전압정재파비는 2.0이하의 특성을 보였다

• Journal of Digital Contents Society
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• v.10 no.3
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• pp.389-393
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• 2009

In this paper, the single patch microstrip antenna and gap coupled broadband microstrip patch antenna using FDTD(Finite Difference Time Domain method) are analyzed. Mur's 2nd absorbing boundary condition to minimize reflected wave is applied. Return loss, voltage standing wave ratio, and input impedance by the length and width of driving patch, the length and width of parasitic patch, and the distance between driving patch and parasitic patch have been analyzed. Design parameters and radiation patterns of broadband antenna have been also shown.