• Journal of the Korean Solar Energy Society
• /
• v.30 no.6
• /
• pp.73-80
• /
• 2010

This study was conducted to estimate the relative performance of modules with changed characteristics due to long term exposure to the outdoor environment, with a specially made test device for simultaneous measurement of real time power output from the photovoltaic array, taking into account the inclined panel, direct irradiation, power being generated, temperature as well as the optimal analysis timing. In terminology description, M is an abbreviation of module and Group A, Group B are 10 modules series connection (1~10 of M), (11~20 of M) for each of them respectively. The overall mean voltage difference of M-18 with the lowest power output and M-14 with the highest output is-2.13V and it was identifiable that voltage difference was more concentrated to Group B. In addition, in case of M-2 and M-7, M-8, when compared with M-14, the overall mean voltage difference was -0.92V, -1.56 and -0.91V respectively showing the more concentration to Group A. When the temperature of module went up by $1^{\circ}C$, the mean voltage was reduced by 0.35V. For current, Group A was lower than Group B by-0.022A and the ratio of each group was 49.68% and 50.32% respectively, presumably the module with deteriorated properties were more concentrated to Group A relatively. From the comparison of relations with the comprehensive accumulation, M-2, M-7, M-8, M-16 and M-18 were those with deterioration of performance to the worst, thereby requiring precision examination. In comparative efficiency, M-14 was the most excellent one as 12.19% while M-18 as 10.53% was identified that its efficiency was comparatively rapidly reduced.

• Journal of IKEEE
• /
• v.21 no.4
• /
• pp.368-374
• /
• 2017

In this Paper, we developed a low power type LED security light using LED lighting that substitutes a 220[V] commercial power source for a solar cell module instead of a halogen or a sodium lamp. in addition, a PWM type drive control circuit is designed to minimize the heat generation problem and the drive current of the LED drive controller. in developed system, The light efficiency measurement value is 93.6[lm/W], and a high precision temperature sensor is used inside the controller to control the heat generation of the LED lamp. In order to eliminate the high heat generated from the LED lamp, it is designed to disperse quickly into the atmosphere through the metal insertion type heat sink. The heat control range of LED lighting was $50-55[^{\circ}C]$. The luminous flux and the lighting speed of the LED security lamp were 0.5[s], and the beam diffusion angle of the LED lamp was about $110[^{\circ}C]$ by the light distribution curve based on the height of 6[m].

• Korean Journal of Optics and Photonics
• /
• v.25 no.4
• /
• pp.216-220
• /
• 2014

We have synthesized a $CaMgSi_2O_6:Eu^{2+}$ blue phosphor via a solid-state reaction method. The $CaMgSi_2O_6:Eu^{2+}$ phosphor has monoclinic structure with a space group of C2/c (15), and an emission band peaking at 450 nm (blue) due to the $4f^7-4f^65d$ transition of the $Eu^{2+}ion$. The emission intensity at $100^{\circ}C$ is 54% of the value at room temperature. A white LED was fabricated by integrating a UV LED (400 nm) with our blue phosphor plus two commercial green and red phosphors. The white LED shows a color temperature of 3500 K with a color rendering index of 87 (x = 0.3936, y = 0.3605), and a luminous efficiency of 18 lm/W. The white LED shows a luminance maintenance of 97% after operation at 350 mA for 400 hours at $85^{\circ}C$.

• Solar Energy
• /
• v.11 no.3
• /
• pp.74-83
• /
• 1991

In this study, the (p)ZnTe/(n)Si solar cell and (n)CdS-(p)ZnTe/(n)Si poly-junction thin film are fabricated by vaccum deposition method at the substrate temperature of $200{\pm}1^{\circ}C$ and then their electrical properties are investigated and compared each other. The test results from the (p)ZnTe/(n)Si solar cell the (n)CdS-(p)ZnTe/(n)Si poly-junction thin fiim under the irradiation of solar energy $100[mW/cm^2]$ are as follows; Short circuit current$[mA/cm^2]$ (p)ZnTe/(n)Si:28 (n)CdS-(p)ZnTe/(n)Si:6.5 Open circuit voltage[mV] (p)ZnTe/(n)Si:450 (n)CdS-(p)ZnTe/(n)Si:250 Fill factor (p)ZnTe/(n)Si:0.65 (n)CdS-(p)ZnTe/(n)Si:0.27 Efficiency[%] (p)ZnTe/(n)Si:8.19 (n)CdS-(p)ZnTe/(n)Si:2.3 The thin film characteristics can be improved by annealing. But the (p)ZnTe/(n)Si solar cell are deteriorated at temperatures above $470^{\circ}C$ for annealing time longer than 15[min] and the (n)CdS-(p)ZnTe/(n)Si thin film are deteriorated at temperature about $580^{\circ}C$ for longer than 15[min]. It is found that the sheet resistance decreases with the increase of annealing temperature.

• Journal of the Korean Vacuum Society
• /
• v.21 no.4
• /
• pp.219-224
• /
• 2012

We study for long-term performance of amorphous silicon solar cells under light exposure. The performance is predicted with a kinetic model in which the carrier lifetimes are determined by the defect density. In particular, the kinetic model is described by the stretched-exponential relaxation of defects to reach equilibrium. In this report, we simulate the light-induced degradation of the amorphous silicon solar cells with the kinetic model and AMPS-1D computer program. And data measured for outdoor performances of various solar cells are compared with the simulated results. This study focuses on examining the light-induced degradation for the following amorphous silicon pin solar cells: thickness${\approx}$300 nm, built-in potential${\approx}$1.05 V, defect density (at t=0)${\approx}5{\times}10^{15}cm^{-3}$, short-circuit current density (at t=0)${\approx}15.8mA/cm^2$, fill factor (at t=0)${\approx}0.691$, open-circuit voltage (at t=0)${\approx}0.865V$, conversion efficiency (at t=0)${\approx}9.50%$.

• Journal of the Korean Vacuum Society
• /
• v.20 no.2
• /
• pp.77-85
• /
• 2011

The silicon-germanium (SiGe) alloy, which is compatible with silicon semiconductor technology and has a smaller band gap and a lower thermal conductivity than silicon, has been used to fabricate electronic devices such as transistors, photodetectors, solar cells, and thermoelectric devices. This paper reviews the application of SiGe alloys to electronic devices and related technical issues. Since the SiGe alloy comprises germanium whose band gap is smaller than silicon, its band gap is also smaller than that of silicon irrespective of the ratio of silicon to germanium. This narrow band gap of SiGe enables the base thickness of bipolar transistors to decrease without a loss in current gain so that it is possible to improve the speed of bipolar transistors by adopting the SiGe-base. In addition, the conversion efficiency of solar cells is enhanced by the absorption of long-wavelength light in the SiGe absorption layer. Phonon scattering caused by the irregular distribution of alloying elements induces the lower thermal conductivity of SiGe than those of pure silicon and germanium. Because a thin film layer with a low thermal conductivity suppresses thermal conduction through a thermal sink, the SiGe alloy is considered to be a promising material for silicon-based thermoelectric systems.

• Journal of the Korean Electrochemical Society
• /
• v.2 no.4
• /
• pp.232-236
• /
• 1999

A solar cell based on dye-sensitized photoelectric conversion was studied by electrochemical and spec-trofluorometric methods for the purposes of enhancing its efficiency and stability of $TiO_2$ solar cells. Nanocrystalline $TiO_2$ was used to prepare photoelectrodes, and photosensitizing dyes such as malachite green oxalate, basic blue3, rhodamine B, and bromocresol purple were chosen as sensitizers. Electrochemical oxidation potentials and absorption and emission wavelengths of dyes were used to determine energy levels of the dyes. By comparing excited energy levels of the dyes with the conduction band edge potential $(E_{c,s})\;of\;TiO_2$ calculated by using the flat-band potential $(E_{fb})\;of\;TiO_2$, properties of a dye required to fabricate a high efficient photosensitizing solar cell with high short-circuit current $(J_{sc})$ were suggested. Enhanced stability of photocurrent was obtained by coating a $TiO_2|ITO$ electrode with Polypyrrole that Possibly Prevented the recombination between the conduction band electrons and oxidized dyes and suppressed the direct electrode redox reactions of dyes on ITO.

• Journal of Sensor Science and Technology
• /
• v.8 no.3
• /
• pp.239-246
• /
• 1999

A highly sensitive photovoltaic infrared photodiode was fabricated for detecting infrared light in $3{\sim}5\;{\mu}m$ wavelength range on InSb wafer with p-i-n structure grown by MOCVD. Silicon dioxide($SiO_2$) insulating films for the junction interface and surface of photodiode were prepared using RPCVD because InSb has low melting point and evaporation temperature. After formation of In ohmic contacts by thermal evaporation, the electrical properties of the photodiode were characterized in dark state at 77K. A product of zero-bias resistance and area($R_0A$) showed $1.56{\times}10^6\;{\Omega}{\cdot}cm^2$ that satisfied BLIP(background limited infrared photodetector) condition. When the photodiode was tested under infrared light, the normalized detectivity of about $10^{11}\;cm{\cdot}Hz^{1/2}{\cdot}W^{-1}$ was obtained. we successfully fabricated a unit cell with InSb IR array with good quantum efficiency and high detectivity.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.16 no.6
• /
• pp.66-73
• /
• 2002

This paper presents ZVZCS(Zero-Voltage and Zero-Current Switching) Three Level DC/DC Converter without primary freewheeling diodes. The new converter presented in this paper used a phase shirt control with a flying capacitor in the primary side to achieve ZVS for the outer switches. A secondary anxiliary circuit which consists of one small capacitor, two small diodes and one coupled inductor, is added in the secondary to provide ZVZCS conditions to primary switches, ZVS for outer switches and ZCS for inner switches. Many advantages include simple secondary auxiliary circuit topology, high efficiency, and low cost make the new converter attractive for high power applications. Also the circulating current flows through the circuit so that it causes the needless coduction loss to be occurred in the devices and the transformer of the circuit The new converter has no primary auxiliary diodes for freewheeling current. The principle of operation, feature and design considerations are illustrated and verified through the experiment with a 1[㎾］ 50[KHz］IGBT based experimental circuit.

• Korean Journal of Optics and Photonics
• /
• v.9 no.5
• /
• pp.333-341
• /
• 1998

The novel integrated device, 1.55 ${\mu}{\textrm}{m}$ DR-LD(distrbuted reflector laser diode) integrated EA-MOD (electro-absorption modulator) as light source, is proposed to improve the device yield and its operational performances. This device can be easily fabricated by the selective MOVPE technique and its fabrication processes are almost the same as the reported 1.55 ${\mu}{\textrm}{m}$ DFB-LD(distributed feedback laser diode) integrated EA-MOD except the asymmetric gratings. The static and dynamic properties are investigated simultaneously by solving the transfer matrix method for light propagation, the time-dependent rate equation for carrier change and schr$\"{o}$dinger equation for QCSE (Quantum-Confined Stark Effect). The performances of the proposed device such as output power, chirp, and extinction ratio are compared with those of DFB-LD integrated EA-MOD. Under 10Gb/s NRZ modulation, we obtain that DR-LD integrated EA-MOD. is 30% higher in output power on the on-state, about 50% lower in chirp, and slightly larger in extinction ratio than DFB-LD integrated EA-MOD.-MOD.