• Title/Summary/Keyword: 전류 패스

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A Radio-Frequency PLL Using a High-Speed VCO with an Improved Negative Skewed Delay Scheme (향상된 부 스큐 고속 VCO를 이용한 초고주파 PLL)

  • Kim, Sung-Ha;Kim, Sam-Dong;Hwang, In-Seok
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.42 no.6
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    • pp.23-36
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    • 2005
  • PLLs have been widely used for many applications including communication systems. This paper presents a VCO with an improved negative skewed delay scheme and a PLL using this VCO. The proposed VCO and PLL are intended for replacing traditional LC oscillators and PLLs used in communication systems and other applications. The circuit designs of the VCO and PLL are based on 0.18um CMOS technology with 1.8V supply voltage. The proposed VCO employs subfeedback loops using pass-transistors and needs two opposite control voltages for the pass transistors. The subfeedback loops speed up oscillation depending on the control voltages and thus provide a high oscillation frequency. The two voltage controls have opposite frequency gain characteristics and result in low phase-noise. The 7-stage VCO in 0.18um CMOS technology operates from $3.2GHz\~6.3GHz$ with phase noise of about -128.8 dBc/Hz at 1MHz frequency onset. For 1.8V supply voltage, the current consumption is about 3.8mA. The proposed PLL has dual loop-filters for the proposed VCO. The PLL is operated at 5GHz with 1.8V supply voltage. These results indicate that the proposed VCO can be used for radio frequency operations replacing LC oscillators. The circuits have been designed and simulated using 0.18um TSMC library.

A Study on the Intenna Based on PIFA with Multi Element (Mulit Element를 이용한 PIFA 구조의 Intenna에 관한 연구)

  • Lim, Yo-Han;Chang, Ki-Hun;Yoon, Young-Joong;Kim, Yong-Jin;Kim, Young-Eil;Yoon, Ick-Jae
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.7
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    • pp.784-795
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    • 2007
  • In this thesis, the Multi element antenna with wideband and enhanced gain characteristic is proposed to operate at both frequency range from 824 MHz to 896 11Hz for the CDMA and frequency range from 908.5 MHz to 914 MHz for the RFID band. The proposed antenna has tile size of $35{\times}15{\times}5mm^3$ in order to put it in the A model of S company and each element of the proposed antenna is folded to obtain the minimum size. To obtain the antenna with wideband and high gain characteristic, the radiator of the antenna is divided into 4 elements. As a result, bandwidth of the proposed antenna become broader and lower center frequency is appeared due to increased and lengthened current path. Moreover, the enhanced gain characteristic is verified because divided element structure that induct uniform current distribution can get increased antenna efficiency. To attain more uniform current distribution, modified structure of the feeding point that can deliver currents directly is designed. The antenna that alters the feeding structure has higher gain value. Each element is folded to increase the current paths considering the current directions to attain the miniaturization of the antenna. To measure the handset antenna, the handset case must be considered. Even though antenna is designed for predicted characteristic, the resonance frequency is shifted and antenna gain is deteriorated at predicted frequency while antenna is set in the handset case. 1.08 GHz of the resonant frequency is determined after frequency shift from 150 MHz to 200 MHz is confirmed and the maximum gain is measured as 3.1 dBi while antenna is not set in the handset. In case handset case is considered, the experimental results show that the impedance bandwidth for VSWR<2 is from 0.824 GHz to 0.936 GHz(110 MHz). This result appears that the proposed antenna can cover both CDMA and RFID band at once. The measured gain is from -3.4 dBi to -0.5 dBi and it has omni-directional pattern practically.

Dielectric properties of ${Ta_2}{O_5}$ thin film capacitor with $SnO_2$ thin film underlayer ($SnO_2$ 박막을 이용한 ${Ta_2}{O_5}$박막 커패시터의유전특성)

  • Kim, Jin-Seok;Jeong, Gang-Min;Lee, Mun-Hui
    • Korean Journal of Materials Research
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    • v.4 no.7
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    • pp.759-766
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    • 1994
  • Our investigation aimed to reduce the leakage current of $Ta_2O_5$ thin film capacitor by layering SnOz thin film layer under Ta thin film, thereby supplying extra oxygen ions from the $SnO_{2}$ underlayer to enhance the stoichiometry of $Ta_2O_5$ during the oxidation of Ta thin film. Tantalum was evaporated by e-beam or sputtered on p-Si wafers with various deposition temperatures and was oxidized by dry--oxygen at the temperatures between $500^{\circ}C$ and $900^{\circ}C$. Aluminum top and bottom electrodes were formed to make Al/$Ta_2O_5$/p-Si/Al or $Al/Ta_2O_5/SnO_2$p-Si/AI MIS type capacitors. LCR meter and pico-ammeter were used to measure the dielectric constants and leakage currents of the prepared thm film capacitors. XRD, AES and ESCA were employed to confirm the crystallization of the thin f~lm and the compositions of the films. Dielectric constant of $Ta_2O_5$ thin film capacitor with $SnO_{2}$ underlayer was found to be about 200, which is about 10 times higher than that of $Ta_2O_5$ thin film capacitor without $SnO_{2}$ underlayer. In addition, higher oxidation temperatures increased the dielectric constants and reduced the leakage current. Higher deposition temperature generally gave lower leakage current. $Ta_2O_5/SnO_2$ capacitor deposited at $200^{\circ}C$ and oxidized at $800^{\circ}C$ showed significantly lower leakage current, $10^{-7}A/\textrm{cm}^2$ at $4 \times 10^{5}$V/cm, compared to the one without $SnO_{2}$ underlayer. XRD showed that $Ta_2O_5$ thin film was crystallized above $700^{\circ}C$. AES and ESCA showed that initially the $SnO_{2}$, underlayer supplied oxygen ions to oxidize the Ta layer, however, Sn also diffused into the Ta thin film layer to form a new $Ta_xSn_YO_Z$ , ternary oxide layer after all.

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Header-Based Power Gating Structure Considering NBTI Aging Effect (NBTI 노화 효과를 고려한 헤더 기반의 파워게이팅 구조)

  • Kim, Kyung-Ki
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.49 no.2
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    • pp.23-30
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    • 2012
  • This paper proposes a novel adaptive header-based power gating structure to compensate for the performance loss and the increased wake-up time of the power gating structures induced by the negative bias temperature instability (NBTI) effect. The proposed structure consists of variable width footers based on the two-pass power gating and a new NBTI sensing circuit for an adaptive control. The simulation results of the proposed structure are compared to those of power gating without the adaptive control and show that both the circuit-delay and wake-up time dependence of the power gating structure on the NBTI stress is minimized with only 3% and 4% increase, respectively while keeping small leakage power and rush-current. In this paper, a 45 nm CMOS technology and predictive NBTI model have been used to implement the proposed circuits.

The implementation of a low-power-consumptive OFDM LSI for the high speed indoor wireless LAN (구내용 고속무선LAN설비를 위한 저전력형 OFDM LSI구현에 관한 연구)

  • 차재상;김성권
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.16 no.5
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    • pp.66-74
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    • 2002
  • OFDM(Orthogonal Frequency Division Multiplexing)is a one of the nst promising digital modulation techniques adapted for Digital audio broadcasting or Digital TV since it is very robust against multipath fading channels. From 1997, since the OFDM technique was considered as the physical layer standard for the high data rate wireless LAN systems in the 5㎓ band, related studies have been studied actively. The key element to implement high data rate wireless LAN system using OFDM technique are IFFT and FFT modules. In this paper, new IFFT and FFT module are designed and implemented using current cut circuit based on the matrix-rounding process for the low-power consumptive operation and high-speed data processing. In addition to, we certify the available operation of the rounded IFFT/FFT module in the AWGN channel by using the BER performance simulation of IEEE 802.11TGa based OFDM modem with rounded IFFT/FFT module.

Butt Weldability for SS400 Using Laser-Arc Hybrid Welding (레이저-아크 하이브리드 용접을 이용한 SS400의 맞대기 용접 특성)

  • Kim, Jong Do;Myoung, Gi Hoon;Park, In Duck
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.40 no.7
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    • pp.667-672
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    • 2016
  • This study presents results of an experimental investigation of the laser-arc, hybrid, butt welding process of SS400 structural steel. Welding parameters including laser power, welding current and speed were varied in order to obtain one-pass, full-penetration welds without defects. The conditions that resulted in optimal beads were identified. After welding, hardness measurements and microstructure observations were carried out in order to study weld properties. The mechanical properties of both the base material and welded specimen were compared based on the results of tensile strength measurements. The yield and tensile strengths were found to be similar.

Prediction of Lift Performance of Automotive Glass Using Finite Element Analysis (유한요소해석을 통한 자동차용 글라스의 승강성능 예측)

  • Moon, Hyung-Il;Kim, Heon-Young;Choi, Cheon;Lee, In-Heok;Kim, Do-Hyung
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.34 no.11
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    • pp.1749-1755
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    • 2010
  • The performance of power window system was decided by driving characteristics of the window regulator part and reaction by the glass run. The performance of power window system usually has been predicted by experimental methods. In this paper, an analytical method using the explicit code was suggested to overcome the limit of the experimental methods. The friction coefficient of glass run was obtained by the friction test at various conditions and the Mooney-Rivlin model was used. Also, a mechanism of window regulator consisted of the fast belt system and the slip ring elements. And, we conducted the analysis considering characteristic of a motor and obtained the lifting speed of automotive glass with high reliability

Study on the channel of bipolar plate for PEM fuel cell (고분자 전해질 연료전지용 바이폴라 플레이트의 유로 연구)

  • Ahn Bum Jong;Ko Jae-Churl;Jo Young-Do
    • Journal of the Korean Institute of Gas
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    • v.8 no.2 s.23
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    • pp.15-27
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    • 2004
  • The purpose of this paper is to improve the performance of Polymer electrolyte fuel cell(PEMFC) by studying the channel dimension of bipolar plates using commercial CFD program 'Fluent'. Simulations are done ranging from 0.5 to 3.0mm for different size in order to find the channel size which shoves the highst hydrogen consumption. The results showed that the smaller channel width, land width, channel depth, the higher hydrogen consumption in anode. When channel width is increased, the pressure drop in channel is decreased because total channel length Is decreased, and when land width is increased, the net hydrogen consumption is decreased because hydrogen is diffused under the land width. It is also found that the influence of hydrogen consumption is larger at different channel width than it at different land width. The change of hydrogen consumption with different channel depth isn't as large as it with different channel width, but channel depth has to be small as can as it does because it has influence on the volume of bipolar plates. however the hydrogen utilization among the channel sizes more than 1.0mm which can be machined in reality is the most at channel width 1.0, land width 1.0, channel depth 0.5mm and considered as optimum channel size. The fuel cell combined with 2cm${\times}$2cm diagonal or serpentine type flow field and MEA(Membrane Electrode Assembly) is tested using 100W PEMFC test station to confirm that the channel size studied in simulation. The results showed that diagonal and serpentine flow field have similarly high OCV and current density of diagonal (low field is higher($2-40mA/m^2$) than that of serpentine flow field under 0.6 voltage, but the current density of serpentine type has higher performance($5-10mA/m^2$) than that of diagonal flow field under 0.7-0.8 voltage.

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