• Geophysics and Geophysical Exploration
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• v.5 no.1
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• pp.56-63
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• 2002

Tracing the history of study, problems of seawater intrusion are commonly investigated with electrical techniques because seawater saturated zone is indicative of the low resistivity anomaly. There we, however, silt and mud layers in the western and southern coastal areas of Korea, so we may make a mistake in case we determine seawater intrusion only with resistivity survey. Hence, reference IP survey was carried out in Kimje, Jeollabuk-Do and Youngkwang, Jeollanam-Do in order to decide whether or not the area is under the influence of seawater intrusion. With the use of a electric field cable to minimize EM coupling, we obtained more accurate results by appling reference If technique measuring simultaneously wavelet of current as well as potential. With the aid of reference IP technique, it is possible that we can exactly evaluate seawater intrusion by discriminating seawater saturated area (no IP effect) from very highly conductive layer composed of clay mineral (high IP effect).

• Progress in Medical Physics
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• v.10 no.1
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• pp.17-22
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• 1999

INJ-I, INJ-E, PFN, BMI, and PRF were selected among the various factors which constitute a digital linear accelerator to find effects on the dose distribution by changing current and voltage within the permitted scale which Mevatron automatically maintained. We measured the absorbed dose using an ion chamber, analyzed the waveform of beam output using an oscilloscope, and measured symmetry and flatness using a dosimetry system. An RFA plus (Scanditronix, Sweden) device was used as a dosimetry system. Then an 0.6cc ion chamber (PR06C, USA), an electrometer (Capintec192, USA), and an oscilloscope (Tektronix, USA) were employed to measure the changes on the dose distribution characteristics by changing the beam-tuning parameters. When the currents and the voltages of INJ-I, INJ-E, PFN, BMI, and PRF were modified, we were able to see the notable change on the dose rate by examining the change of the output pulse using the oscilloscope and by measuring them using the ion chamber. However, the results of energy and flatness graph from RF A plus were almost identical. The factors had fine differences: INJ-I, INJ-E, PFN, BMI, and PRF had 0.01∼0.02% differences in D10/D20, 0.1∼0.2 % differences in symmetry, and 0.1∼0.4% differences in flatness. Since Mevatron controlled itself automatically to keep the reference value of the factor, it was not able to see large differences in the dose distribution. There were fine differences on the dose rate distribution when the voltage and the currents of the digitized factors were modified Nonetheless, a basic operational management information was achieved.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.5 s.347
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• pp.35-44
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• 2006

Reflective semiconductor optical amplifiers(R-SOAs) were designed with high gain, wide optical bandwidth, high thermal reliability and wide modulation bandwidth in TO-can package for the transmitter of wavelength division multiplexed-passive optical network(WDM-PON) application. Double trench structure and current block layer were introduced in designing the active layer of R-SOA to enable high speed modulation. The injection power requirement and the viable temperature range of WDM-PON system are experimentally analysed in based on Amplified Spontaneous Emission(ASE)-injected R-SOAs. The effect of the different injection spectrum in the gain-saturated R-SOA was experimentally characterized based on the measurements of excessive intensity noise, Q factor, and BER. The proposed spectral pre-composition method reduces the bandwidth of injection source below the AWG bandwidth and thereby avoids spectrum distortion impeding the intensity noise reduction originated from the amplitude squeezing.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.110-120
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• 2016

A power-efficient neuromodulator is needed for implantable systems. In spite of their stimulation signal's simplicity of wave shape and waiting time of MCU(micro controller unit) much longer than execution time, there is no consideration for low-power design. In this paper, we propose a novel of low-power algorithm based on the characteristics of stimulation signals. Then, we designed and implement a neuromodulation software that we call NMS(neuro modulation simulation). In order to implement low-power algorithm, first, we analyze running time of every function in existing NMS. Then, we calculate execution time and waiting time for these functions. Subsequently, we estimate the transition time between active mode (AM) and low-power mode (LPM). By using these results, we redesign the architecture of NMS in the proposed low-power algorithm: a stimulation signal divided into a number of segments by using characteristics of the signal from which AM or LPM segments are defined for determining the MCU power reduces to turn off or not. Our experimental results indicate that NMS with low-power algorithm reducing current consumption of MCU by 76.31 percent compared to NMS without low-power algorithm.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.4
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• pp.49-53
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• 2011

High-speed Cu filling into a through-silicon-via (TSV) and simplification of bumping process by electroplating for three dimensional stacking of Si dice were investigated. The TSV was prepared on a Si wafer by deep reactive ion etching, and $SiO_2$, Ti and Au layers were coated as functional layers on the via wall. In order to increase the filling rate of Cu into the via, a periodic-pulse-reverse wave current was applied to the Si chip during electroplating. In the bumping process, Sn-3.5Ag bumping was performed on the Cu plugs without lithography process. After electroplating, the cross sections of the vias and appearance of the bumps were observed by using a field emission scanning electron microscope. As a result, voids in the Cu-plugs were produced by via blocking around via opening and at the middle of the via when the vias were plated for 60 min at -9.66 $mA/cm^2$ and -7.71 $mA/cm^2$, respectively. The Cu plug with a void or a defect led to the production of imperfect Sn-Ag bump which was formed on the Cu-plug.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.7 no.3
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• pp.27-33
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• 1993

This paper presents the &tal controller for driving high frequency voltage fed PWM inverter that carrier frequency is over 2OkHz.We analyzed the conventional PWM to select a proper PWM pattern. as the result, obtained PWM pattern of the controller in which asynchronus staircase sinusoidal waveform is used as reference signal, and variable carrier ratio method was used for PWM control. The PWM controller is designed by fully digital method. Especially, Thk proposed controller is consisted of 8 bit one-chip microprocessor and digital logic. the former is for arithmetic and data processing, and the latter is for PWM pattern synthesis. Therefore, The responsibility and controllability is improved. Also, Data processing capability is improved using proper program to output modulation index with 9 bits. Circuits configuration of digital controller are made up of one chip 8051 and EPLD, and its controllability is tested by operating voltage fed inverter. Harmonics and current waveform is evaluated and analyzed for the voltage fed inverter system.

• Fire Science and Engineering
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• v.27 no.2
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• pp.1-5
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• 2013

This paper studies on an arc fault interruption control circuit (AFICC) of fault voltage sensing type. The proposed voltage sensing type AFICC (VST_AFICC) is an electrical fire prevention apparatus that operates the existing circuit breaker with sensing the instantaneous voltage drop of line voltage when occurs electrical faults. The existing Earth Leakage Circuit Breaker (ELB), Molded_case Circuit Breaker (MCCB), and Residual Current Protective Devices (RCDs) used in low voltage distributing system don't have protective capability from electric arc faults to be a major factor of electrical fire. In this paper to improve such problems, a new VST_AFICC using the distortion of voltage waveform when occurs electrical faults is proposed to prevent electrical fire. There is characteristic that the control method of proposed apparatus is different from previous current sensing type. The proposed AFICC has merit that is manufactured by small size and light weight. The practicality of a new VST_AFICC is also verified through various operation analysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.161-161
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• 2012

본 연구에서는 InGaAs을 이용한 테라헤르쯔(THz) 발생과 검출 특성을 GaAs에 의한 특성과 비교, 조사하였다. 고온성장(HTG, $530^{\circ}C$) InGaAs를 이용하여 photo-Dember (pD) 효과(표면방출)에 의한 THz 발생 특성을 조사하였으며, THz 검출 특성에는 저온성장(LTG, $530^{\circ}C$) InGaAs: Be을 이용하였다. HTG-InGaAs 기판 위에 패턴한 금속전극 (Ti/Au, ${\sim}500{\times}500{\mu}m$)의 가장자리에 Ti: Sapphire fs 펄스 레이저(30 ps/90 MHz)를 조사하여 LTG-GaAs 수신기(Rx)로 THz를 검출, 전류신호(a)와 Fourier transform (FT) 주파수 스펙트럼(b)을 얻었다. HTG-InGaAs에서 얻은 파형은 SI-GaAs에서와 거의 비슷한 모양이었으나, 주파수 범위(0.5~2 THz)는 SI-GaAs의 1~3 THz 보다 좁고 FT 스펙트럼의 세기는 약 1/8 정도로 낮았다. LTG-InGaAs 수신기 (Rx)의 안테나는 쌍극자 ($5/20{\mu}m$) 형태를 가지고 있으며, SI-GaAs Tx로 발생시킨 광원을 사용하여 THz 영역의 검출 특성을 조사하였다. HTG-InGaAs Tx 및 LTG-InGaAs Rx의 이득은 각각 약 $5{\times}10^{-8}$ A/W과 $2.5{\times}10^{-8}$ A/W인 것으로 분석되었다.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.4
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• pp.9-14
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• 2003

The new optical link receiver with data transfer rate higher than 10Mbps at the supply voltage of 1.8V was designed and fabricated using bipolar technology. The fabricated IC showed the dissipation current of 4.6mA under high level input voltage of 1.5V. The high level output voltage($V_{OH}$) and the low level output voltage($V_{OL}$) were 1.15V and 0V, respectively, for a given 10 Mbps signal which has duty ratio of 50%, $V_{IL}$(low level input voltage) of 0.5V, and $V_{IH}$(high level input voltage) of 1.5V, The duty ratio of output waveform was 52.6%. The rising time(t$_{r}$) and the falling time(t$_{f}$) were 9.5ns and 6.8ns, respectively. The propagation delay difference($t_{PHC}-t_{PLH}$) and the jitter($t_j$) were 11.7ns and 4.3ns, respectively.y.

• Fire Science and Engineering
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• v.18 no.4
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• pp.57-63
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• 2004

We investigated heat properties of connection terminal in residual current protective devices(RCD) according to contact pressure for low voltage appliance. And we analyzed voltage and current waveform and oxide propagation when the poor-contact happened between terminal and wire. When contact pressure between terminal and connection wire was not applied, the heat was generated and an oxide was formed on the surface of the wire. The temperature of the insulation surrounding terminal was ascended sharply by poor-contact, micro-sparks and continuous arc sound happened in interior terminal. When the poor-contact by vibration occurred inner conductor of terminal and wire, an oxide was propagated on contact surface and the temperature was increased at 869℃. Thus, we found that the risk of electrical disaster is high in terminal and connection wire parts.