• Title/Summary/Keyword: 전류최소화

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Sterilization of Neurospora Crassa by Noncontacted Low Temperature Atmospheric Pressure Surface Discharged Plasma with Dielectric Barrier Structure (유전체장벽 방전구조의 비접촉식 저온 대기압 면방전 플라즈마를 이용한 빵곰팡이의 살균효과)

  • Ryu, Young Hyo;Uhm, Han Sup;Park, Gyung Soon;Choi, Eun Ha
    • Journal of the Korean Vacuum Society
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    • v.22 no.2
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    • pp.55-65
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    • 2013
  • Sterilization of Neurospora crassa has been investigated in this research by using a surface air plasma with dielectric barrier discharged (DBD) structure under atmospheric pressure. The sinusoidal alternating current has been used in this experiment with discharge voltage of 1.4~2.3 kV. The phase difference between the voltage and current signals are found to be almost 80 degree due to the capacitive property of dielectric barrier. Temperature on the biomaterials has been minimized by radiating the heat with the air cooling system. It is noted that the substrate temperature remains under 37 degree for plasma exposure time of 10 minutes with operation of cooler system. It is found that the ozone, $O_3$, has been measured to be about 25~30 ppm within 1 cm region and to be about 5 ppm at the 150 cm downstream region away from the suface plasma. It is also noted that the nitric oxide, NO, and nitric dioxide, $NO_2$, are not nearly detected. Germination rate and mitochodrial activity of Neurospora crassa immersed in the deionized water have been found to be drastically decreased as the plasma treatment time and its electrical power are increased in this experiment. Here, the mitochondrial activity has been analyzed by MTT (3-(4,5-dimethy lthiazol-2yl)-2,5-diphenyl-2H-tetrazolium bromide) assay. However, sterilization of Neurospora crassa immersed in the Vogel's minimal media has been found to be low by plasma treatment, which is caused by surrounding background solution. This research shows the sterilization possibility of Neurospora crassa by using the noncontated surface DBD plasma, which is different from the plasma jet. This is mainly attibuted to the reactive species generated by the surface plasma, since they play a major role for inhibition of micobes such as Neurospora crassa.

A 13b 100MS/s 0.70㎟ 45nm CMOS ADC for IF-Domain Signal Processing Systems (IF 대역 신호처리 시스템 응용을 위한 13비트 100MS/s 0.70㎟ 45nm CMOS ADC)

  • Park, Jun-Sang;An, Tai-Ji;Ahn, Gil-Cho;Lee, Mun-Kyo;Go, Min-Ho;Lee, Seung-Hoon
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.3
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    • pp.46-55
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    • 2016
  • This work proposes a 13b 100MS/s 45nm CMOS ADC with a high dynamic performance for IF-domain high-speed signal processing systems based on a four-step pipeline architecture to optimize operating specifications. The SHA employs a wideband high-speed sampling network properly to process high-frequency input signals exceeding a sampling frequency. The SHA and MDACs adopt a two-stage amplifier with a gain-boosting technique to obtain the required high DC gain and the wide signal-swing range, while the amplifier and bias circuits use the same unit-size devices repeatedly to minimize device mismatch. Furthermore, a separate analog power supply voltage for on-chip current and voltage references minimizes performance degradation caused by the undesired noise and interference from adjacent functional blocks during high-speed operation. The proposed ADC occupies an active die area of $0.70mm^2$, based on various process-insensitive layout techniques to minimize the physical process imperfection effects. The prototype ADC in a 45nm CMOS demonstrates a measured DNL and INL within 0.77LSB and 1.57LSB, with a maximum SNDR and SFDR of 64.2dB and 78.4dB at 100MS/s, respectively. The ADC is implemented with long-channel devices rather than minimum channel-length devices available in this CMOS technology to process a wide input range of $2.0V_{PP}$ for the required system and to obtain a high dynamic performance at IF-domain input signal bands. The ADC consumes 425.0mW with a single analog voltage of 2.5V and two digital voltages of 2.5V and 1.1V.

Study on Standardization of the Environmental Impact Evaluation Method of Extremely Low Frequency Magnetic Fields near High Voltage Overhead Transmission Lines (고압 가공송전선로의 극저주파자기장 환경영향평가 방법 표준화에 관한 연구)

  • Park, Sung-Ae;Jung, Joonsig;Choi, Taebong;Jeong, Minjoo;Kim, Bu-Kyung;Lee, Jongchun
    • Journal of Environmental Impact Assessment
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    • v.27 no.6
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    • pp.658-673
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    • 2018
  • Social conflicts with extremely low frequency magnetic field(ELF-MF) exposures are expected to exacerbate due to continued increase in electric power demand and construction of high voltage transmission lines(HVTL). However, in current environmental impact assessment(EIA) act, specific guidelines have not been included concretely about EIA of ELF-MF. Therefore, this study conducted a standardization study on EIA method through case analysis, field measurement, and expert consultation of the EIA for the ELF-MF near HVTL which is the main cause of exposures. The status of the EIA of the ELF-MF and the problem to be improved are derived and the EIA method which can solve it is suggested. The main contents of the study is that the physical characteristics of the ELF-MF affected by distance and powerload should be considered at all stages of EIA(survey of the current situation - Prediction of the impacts - preparation of mitigation plan ? post EIA planning). Based on this study, we also suggested the 'Measurement method for extremely low frequency magnetic field on transmission line' and 'Table for extremely low frequency magnetic field measurement record on transmission line'. The results of this study can be applied to the EIA that minimizes the damage and conflict to the construction of transmission line and derives rational measures at the present time when the human hazard to long term exposure of the ELF-MF is unclear.