• The Transactions of the Korean Institute of Power Electronics
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• v.4 no.6
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• pp.539-546
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• 1999

A new integrated single-stage zero current switched(ZCS) quasi resonant convertedQRC) for the IX)wer f factor correction(PFCl converter is introduced in this paper. The power factor correction can be achieved by t the discontinuous conduction mod$\varepsilon$(DCM) operation of an input current. The proposed converter has the c characteristics of the good IX)wer factor, 10씨 line current harmonics, and tight output regulation. Furthern10re, t the ringing effect due to the output capacitance of the main switch can be eliminated by use of‘ active clamp c circuit. Therefore, the proIX)sed converter is expecttc'(] to be suitable for a compact power converter with a t tightly regulated output voltage requiring a switching frequency of more than several hundrtc'(]s kHz.

• KEPCO Journal on Electric Power and Energy
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• v.6 no.4
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• pp.393-397
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• 2020

Shunt reactor, a facility for reactive power compensation, is switched several times a day depending on the load pattern. When the circuitbreaker opens the shunt reactor over-voltage is generated by several factors which degrade the insulating performance of internal parts of the circuit-breaker and cause severe voltage stress on the equipment in the power system. Transient phenomenon occurring during the switching of shunt reactor are available in laboratories that verify the performance of the circuit-breaker by simulating the power system. However, it is difficult to measure the transient phenomenon that occurs during actual operation in actual power system due to many limitations. Therefore, this paper deals with the modeling using EMTP to analyze the reignition and current chopping which causes more severe transient recovery voltage in the small inductive current breaking in actual power systems. In addition, this paper analyzes the main phenomenon that cause circuit-breaker failure in opening shunt reactor using EMTP model.

• Plant Journal
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• v.16 no.4
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• pp.40-44
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• 2020

In this study, after supplying a pulse wave to the 2 V Industrial Lead-Acid Battery electrode plate and repeating the charging and discharging, the discharging time per voltage was analyzed. According to the result of experiment, while the lead-acid Battery that a pulse wave is not supplied decreased about 18 % of discharging capacity than the beginning, the lead-acid Battery that a pulse wave is supplied decreased a little amount much lower than 18 %, of discharging capacity and recorded the 0.56 % decrease, at a minimum, from discharging capacity at the 20 kHz frequency. This means that the sulfate on electrode plate is detached and the positive and negative charge transfer is highly activated at the 20 kHz frequency

• Journal of Convergence for Information Technology
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• v.11 no.6
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• pp.7-13
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• 2021

In this paper, the function of starting the negative voltage used in the IT equipment when it is generated and the method of controlling it using a microcontroller for the function to detect the overload and respond to it are presented. To do this, the limitations of the existing negative voltage generation circuit and the problems that occur during overload were analyzed, and a circuit that detects and controls the overload condition without a separate current sensing circuit was presented. In order to confirm the effect of the proposed method, an experiment was conducted by configuring an experimental circuit. As a result of the experiment, compared to the existing negative voltage generation circuit, which falls into a latch-up state when overloaded and enters a dangerous state, the proposed circuit detects this, stop the operation of the circuit, and informs the user of such an abnormal state to take action. have. In addition, since the starting point of the circuit is determined according to the system state, the experimental result was confirmed that the starting time was significantly shortened by about 23% compared to the time switch method.

• The Journal of the Korea institute of electronic communication sciences
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• v.18 no.4
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• pp.641-648
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• 2023

Recently, the rapid growth of artificial intelligence among the 4th industrial revolution has progressed based on the performance improvement of semiconductor, and circuit integration. According to transistors, which help operation of internal electronic devices and equipment that have been progressed to be more complicated and miniaturized, the control of heat generation and improvement of heat dissipation efficiency have emerged as new performance indicators. The DUT(Device Under Test) Shell is equipment which detects malfunction transistor by evaluating the durability of transistor through heat dissipation in a state where the power is cut off at an arbitrary heating point applying the rating current to inspect the transistor. Since the DUT shell can test more transistor at the same time according to the heat dissipation structure inside the equipment, the heat dissipation efficiency has a direct relationship with the malfunction transistor detection efficiency. Thus, in this paper, we propose various method for PCB configuration structure to optimize heat dissipation of DUT shell and we also propose various transformation and thermal analysis of optimal DUT shell using computational fluid dynamics.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.11
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• pp.48-53
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• 2007

In this paper, a high LO-RF isolation W-band MIMIC single-balanced mixer was designed and fabricated using a branch line coupler and a ${\lambda}/4$ transmission line. The W-band MIMIC single-balanced mixer was designed using the $0.1\;{\mu}m$ InGaAs/InAlAs/GaAs Metamorphic HEMT diode. The fabricated MHEMT was obtained the cut-off frequency($f_T$) of 154 GHz and the maximum oscillation frequency($f_{max}$) of 454 GHz. The designed MIMIC single-balanced mixer was fabricated using $0.1\;{\mu}m$ MHEMT MIMIC process. From the measurement, the conversion loss of the single-balanced mixer was 12.8 dB at an LO power of 8.6 dBm. P1 dB(1 dB compression point) of input and output were 5 dBm and -8.9 dBm, respectively. The LO-RF isolations of single-balanced mixer was obtained 37.2 dB at 94 GHz. We obtained in this study a higher LO-RF isolation compared to some other balanced mixers in millimeter-wave frequencies.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.153-159
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• 2007

In-cryostat helium lines are under installation to transfer a cryogenic helium into cold components in KSTAR device. In KSTAR, three kinds of helium should be supplied into the cold components, which are supercritical helium Into superconduction(SC) magnet system, liquid helium into current lead system, and gas helium into thermal shields. Cryogenic helium lines consist of transfer lines outside the cryostat, in-cryostat helium lines, and electrical breaks. In-cryostat helium lines should be guaranteed of leak tightness for tong time operation at high internal helium pressure of 20 bar. We wrapped the helium line with multi-layer insulator(MLI) to reduce radiation heat and insulated the surface of the high potential part with prepreg tape. The electrical break was fabricated by brazing ceramic tube with stainless steel tube. To ensure the operation reliability at operation temperature, all the electrical break have been examined by the thermal cycle test at liquid nitrogen and by the hydraulic test at 30 bar. And additional surface insulation was prepared with prepreg tape to give structural safety. At present most of the in-cryostat helium lines have been installed and the final inspection test is progressing.

• Journal of the Korean Ceramic Society
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• v.42 no.4
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• pp.269-275
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• 2005

We analyzed the unit cell performance against the cathode porosity, which is supposed to be closely related with active sites for the cathode reaction. In order to fabricate the unit cells with different porosity in the cathode layer we changed the mixing ratio of fine and coarse LSCF cathode powders. The final porosity of each cathode layer was 14, 23, 27, $39\%$ respectively. According to the electrochemical analysis of unit cell performance via DC current interruption and AC impedance method, the electrodic polarization resistance was diminished as the cathode porosity increased. The decrease of polarization resistance was attributed due to the increase of active reaction sites and the enhancement of overall unit cell performance could be explained in the same line.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.8
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• pp.14-18
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• 2018

Generally. the Ohmic's law is an important factor to increase the conductivity in a micro device. So it is also known that the Ohmic contact in a semiconductor device is import. The PN junction as a structure of semiconductor involves the depletion layer, and this depletion layer induces the non linear electrical properties and also makes the Schottky contact as an intrinsic characteristics of semiconductor. To research the conduction effect of insulators in the semiconductor device, $SiO_2$ thin film and $V_2O_5/SiO_2$ thin film were researched by using the current-voltage system. In the nano electro-magnetic system, the $SiO_2$ thin film as a insulator had the non linear Schottky contact, and the as deposited $V_2O_5$ thin film had the linear Ohmic contact owing to the $SiO_2$ thin film with superior insulator's properties, which decreases the leakage current. In the positive voltage, the capacitance of $SiO_2$ thin film was very low, but that of $V_2O_5$ thin film increased with increasing the voltage. In the normal electric field system, it was confirmed that the conductivity of $V_2O_5$ thin film was increased by the effect of $SiO_2$ thin film. It was confirmed that the Schottky contact of semiconductors enhanced the performance of electrical properties to increased the conductivity.

• Journal of the Korean Vacuum Society
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• v.21 no.5
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• pp.264-272
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• 2012

In this paper, we report THz generation and detection characteristics investigated by InGaAs semiconductor epilayers, as results of a basic study obtained from the InGaAs-based THz transmitter/receiver (Tx/Rx). High-temperature and low-temperature (LT) grown InGaAs epilayers were prepared by the molecular beam epitaxy technique for the characterization of THz generation and detection, respectively, and the surface emission based on the photo-Dember effect was tried for THz generation. THz wave was generated by irradiation of a Ti:Sapphire fs pulse laser (60 ps/83 MHz), and a LT-GaAs Rx was used for the THz detection. The frequency band shown in the spectral amplitudes Fourier-transformed from the measured current signals was ranging in 0.5~2 THz, and the signal currents were exponentially increased with the Tx beam power. The THz detection characteristics of LT-InGaAs were investigated by using an Rx with dipole (5/20 ${\mu}m$) antenna, and the cutoff frequency was ~2 THz.