• Title/Summary/Keyword: 전류종속 전류소스

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Parameters Estimation for Pseudo Loudspeaker attached to Closed-Box and Enhanced Closed-Box Modeling (밀폐박스 상태의 가상 라우드스피커 매개변수 규명법 및 개선된 밀폐박스 모델링)

  • Park, Seok-Tae
    • Transactions of the Korean Society for Noise and Vibration Engineering
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    • v.17 no.10
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    • pp.983-992
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    • 2007
  • It was proposed to identify Thiele Small Parameters for loudspeaker attached to closed-box using known dynamic mass of moving parts. Also, enhanced PSPICE circuit model for closed-box loudspeaker system was proposed to more accurately simulate real closed-box loudspeaker system. Frequency dependent parameters were used to model voice coil inductor. Acoustic pressure response curves and electrical impedance curves were simulated and investigated by PSPICE circuit model according to compensation filter's parameters. Finally, proposed method is expected to be utilized for identification of pseudo Thiele Small parameters of microspeaker.

Enhanced PSPICE Circuit Model for Vented-Box Loudspeaker System (PSPICE를 이용한 개선된 벤트박스 스피커 시스템 모델링)

  • Park, Seok-Tae
    • Transactions of the Korean Society for Noise and Vibration Engineering
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    • v.17 no.8
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    • pp.757-765
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    • 2007
  • Enhanced PSPICE circuit model for vented-box loudspeaker system with lumped parameters was proposed to more accurately simulate real vented-box loudspeaker system. Frequency dependent parameters were used to model voice coil inductor. Acoustic pressure response curves and electrical impedance curves were simulated and investigated by PSPICE circuit model according to circuit parameters' variations. Finally, it was used to identify faults detection in woofers manufactured by unskilled persons.

A Study on Improved SPICE MOSFET RF Model Considering Wide Width Effect (Wide Width Effect를 고려하여 개선된 SPICE MOSFET RF Model 연구)

  • Cha, Ji-Yong;Cha, Jun-Young;Lee, Seong-Hearn
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.2
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    • pp.7-12
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    • 2008
  • In this study, the wide width effect that the increasing rate of drain current and the value of cutoff frequency decrease with larger finger number is observed. For modeling this effect, an improved SPICE MOSFET RF model that finger number-independent external source resistance is connected to a conventional BSIM3v3 RF model is developed. Better agreement between simulated and measured drain current and cutoff frequency at different finger number is obtained for the improved model than the conventional one, verifying the accuracy of the improved model for $0.13{\mu}m$ multi-finger MOSFET.