• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.38 no.10
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• pp.992-997
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• 2010

The Propulsion Control Module(PCM) of Hall-thruster Propulsion System(HPS) for Science and Technology Satellite-3 (STSAT-3) has the flow control accuracy of less than ${\pm}$3% and the pressure control accuracy of less than ${\pm}$5%. The pressure controller adjusts pressure around the set point by using a Proportional Flow Control Valve (PFCV) and a high pressure transducer, while the flow controller regulates the flow rate using PFCV and the anode current telemetry of the Hall Thruster. The controllers are chosen as the Proportional and Integral(PI) type, and the PI gains are tuned based on the Matlab simulations. The result of the PCM test had the flow control accuracy of less than ${\pm}$1.87% and the pressure control accuracy of less than ${\pm}$5%. This paper describes the design, realization, and performance test results of the PCM.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.10
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• pp.3917-3922
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• 2010

In this paper, 3 stage amplifier MMIC was designed and fabricated with U-band optimized epitaxal pHEMT that produced by large signal characterization and modeling for 60 GHz band. The pHEMT used in this paper, the gate $0.12\;{\mu}m$ length and total gate width of $100\;{\mu}m$, $200\;{\mu}m$ has been modeled using the large signal designed with negative feedback and MCLF instead of MIM capacitor for improving stability. Fabricated MMIC $2.5{\times}1.5mm^2$ size, current about 40 mA, operating frequency 59.5~60.5 GHz, gain 19.9~18.6 dB, input matching characteristics -14.6~-14.7 dB, output matching characteristics -11.9~-16.3 dB and output -5 dBm characteristics were obtained.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.1
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• pp.46-52
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• 2010

A compact circular microstrip patch antenna with a switchable circular polarization(CP) is proposed at 2.4 GHz. An unequal cross-shaped slot on a ground plane is utilized as a perturbation. By switching pin diodes mounted on the slot, the CP sense of each antenna can be simply switched from left-handed(LH) CP to right-handed(RH) CP vice versa. Since the perturbation can be made on the ground plane and no bias circuit is required on the patch side, the bias circuit has not effect on the main beam radiation. From the experimental results, the impedance bandwidth and CP bandwidth of the proposed antenna have shown up to 150 MHz and 35 MHz, respectively. The peak gain of the proposed antenna is 1.7 dBi for both CP senses.

• The Transactions of the Korean Institute of Power Electronics
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• v.8 no.4
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• pp.366-374
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• 2003

In electric motor coaches, the rolling stocks move by the adhesive effort between rail and driving wheel. Generally, the adhesive effort is defined by the function of both the weight of electric motor coach and the adhesive effort between rails and driving wheel. The characteristics of adhesive effort is strongly affected by the conditions between rails and driving wheel. When the adhesive effort decreases suddenly, the electric motor coach has slip phenomena. This paper proposes a re-adhesion control algorithm which uses the maximum adhesive effort by instantaneous estimation of adhesion force using load torque disturbance observer. Based on this estimated adhesive effort, the re-adhesion control Is peformed to obtain the maximum transfer of the tractive effort.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.5
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• pp.430-433
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• 2017

This paper presents a S/C/X-band LNA MMIC with resistive feedback structure in 0.25 um GaN HEMT process. The GaN devices have advantages as a high output power device having high breakdown voltage, energy band gap and stability at high temperature. Since the receiver using the GaN device with high linearity can be implemented without a limiter, the noise figure of the receiver can be improved and the size of receiver module can be reduced. The proposed GaN LNA MMIC based on 0.25 um GaN HEMT device is achieved the gain of > 15 dB, the noise figure of < 3 dB, the input return loss of > 13 dB, and the output return loss of > 8 dB in the S/C/X-band. The current consumption of GaN LNA MMIC is 70 mA with the drain voltage 20 V and the gate voltage -3 V.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.5
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• pp.445-454
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• 2015

In this paper, we propose an optimal design method for a dual reflector antenna(DRA) using the Genetic algorithm. In order to reduce the computational burden during the optimal design, we exploit the iterative physical optics(IPO) to calculate the surface current distribution at each reflector antenna. To improve the accuracy, we consider the shadow effect by the structure and the coupling effect by the multi-reflection based on the iterative MFIE(Magnetic Field Integral Equation). To reduce the number of design variables and generate a smooth surface, we use the Bezier function with the control points, which become the design variables in this paper. We adopt the HPBW(Half Power Beam Width), the FNBW(First Null Beam Width), and the SLL(Side Lobe Level) as the objective or cost functions. To verify the results, we compare them with the those of the commercial tool.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.9
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• pp.1037-1044
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• 2008

Radiation efficiency and antenna gain, in this paper, can be increased by the slot on EMI shield painted on the mobile phone back cover. When the EMI slot which has proper dimension and location is located on the EMI paining area in the phone, the increment of antenna current density due to mutual coupling between the antenna and slot derives increment of antenna efficiency. For the verification of EMI slot effect, we apply the EMI slot to the mobile phone which is operating on GSM/DCS/USPCS/WCDMA quad band, and measure $S_{11}$ and antenna efficiency. It's shown that resonant frequency is not changed and radiation efficiencies to frequency channels by EMI slot are increased from 0.21 % to 8.96 %.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.8 s.338
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• pp.53-60
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• 2005

Recently, sub-micron CMOS technologies have taken the place of III-V materials in a number of areas in integrated circuit designs, in particular even for the applications of gjgabit optical communication applications due to its low cost, high integration level, low power dissipation, and short turn-around time characteristics. In this paper, a four-channel transimpedance amplifier (TIA) array is realized in a standard 0.35mm CMOS technology Each channel includes an optical PIN photodiode and a TIA incorporating the fully differential regulated cascode (RGC) input configuration to achieve effectively enhanced transconductance(gm) and also exploiting the inductive peaking technique to extend the bandwidth. Post-layout simulations show that each TIA demonstrates the mid-band transimpedance gain of 59.3dBW, the -3dB bandwidth of 2.45GHz for 0.5pF photodiode capacitance, and the average noise current spectral density of 18.4pA/sqrt(Hz). The TIA array dissipates 92mw p in total from a single 3.3V supply The four-channel RGC TIA array is suitable for low-power, high-speed optical interconnect applications.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.4
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• pp.409-412
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• 2002

The LNA(Low Noise Amplifier) is designed for use in low cost commercial application covered fully IMT-2000 band(1920~2170MHz, BW=250MHz). It is optimized source inductance for source lead and designed to equivalent etched line. The LNA uses a high pass impedance matching network for noise match and simple structure. The bias circuit designs have been made self-biased with a negative voltage applied to gate. The power supply voltage is 8V, total current is 180mA. The LNA is biased at a Vgs of -0.4, Vds of 4V for first stage and Vds of 5V for second stage. The LNA is designed competitively for commercial product specification. The measured gain and noise figure of the completed amplifier was 20dB and 1dB, respectively. Also, input VSWR, P1dB and gain flatness was measured of 1.14 ~ l.3dB, 22.4dBm and $\pm$0.45dB, respectively. The designed LNA can be used for commercial product.

• Journal of the Korean Institute of Telematics and Electronics
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• v.13 no.1
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• pp.11-15
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• 1976

In a MOSFET multivibrator, the gate do not hold into a constant clamp voltage during a conduction period. The analysis of the operation and the 43sign of a MOSFET multivibrator circuit are much more discult than that using a bipolar transistor and a electron tube because of above reason. And therefore, in the designing procedures of the MOSFET monostable multivibrator of this paper, a graphical method is adopted in order to analyze and design easily. The voltage gain curves of the both FETs are drawn using a parameter the voltage Vc across the coupling condenser, and the curves are utilized to investigate the voltages of the drains and the gates and determine the gate bias voltage. The diagram gives also important informations for the design of the multivibrator.