• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1055-1063
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• 2013

Low noise amplifiers(LNAs) are an integral component of RF receivers and are frequently required to operate at wide frequency bands for various wireless systems. For wideband operation, important performance metrics such as voltage gain, return loss, noise figures and linearity have been carefully investigated and characterized for the proposed LNA. An inductive shunt feedback configuration is successfully employed in the input stage of the proposed LNA which incorporates cascaded networks with a peaking inductor in the buffer stage. Design equations for obtaining low and high input matching frequencies are easily derived, leading to a relatively simple method for circuit implementation. Careful theoretical analysis explains that poles and zeros are characterized and utilized for realizing the wideband response. Linearity is significantly improved because the inductor between gate and drain decreases the third-order harmonics at the output. Fabricated in $0.18{\mu}m$ CMOS process, the chip area of this LNA is $0.202mm^2$, including pads. Measurement results illustrate that input return loss shows less than -7 dB, voltage gain greater than 8 dB, and a little high noise figure around 7~8 dB over 1.5~13 GHz. In addition, good linearity(IIP3) of 2.5 dBm is achieved at 8 GHz and 14 mA of current is consumed from a 1.8 V supply.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.2
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• pp.47-55
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• 2012

A discrete-time(DT) filter with high-order temporal moving average(TMA) using actively-weighted charge sampling is proposed in this paper. To obtain different weight of sampled charge, the variable transconductance OTA is used prior to charge sampler, and the ratio of charge can be effectively weighted by switching the control transistors in the OTA. As a result, high-order TMA operation can be possible by actively-weighted charge sampling. In addition, the transconductance generated by the OTA is relatively accurate and stable by using the size ratio of the control transistors. The high-order TMA filter has small size, increased voltage gain, and low parasitic effects due to the small amount of switches and sampling capacitors. It is implemented in the TSMC $0.18-{\mu}m$ CMOS process by TMA-$2^2$. The simulated voltage gain is about 16.7 dB, and P1dB and IIP3 are -32.5 dBm and -23.7 dBm, respectively. DC current consumption is about 9.7 mA.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.5 s.96
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• pp.501-510
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• 2005

In this paper, the miniaturized linear and circular polarization microstrip antennas are designed and fabricated at the resonant frequency of 1.575 GHz. To miniaturize the microstrip patch antenna(MPA), the 'L' type plates are attached under the rectangular microstrip patch. In case of the linear polarization, the size of the microstrip antenna attached the 14 plates is reduced to $67.9\%(47mm{\times}47mm)$ compared with general $MPA(83mm{\times}83mm)$. The return loss and -10 dB bandwidth are -34.4 dB and 49 $MHz(3.1\%)$. And the radiation pattern is broad through the size reduction of the patch. Also in case of the circular polarization, the size of the microstrip antenna with 13 plates is reduced to $54.6\%(53mm{\times}54mm)$ compared with the general $MPA(76mm{\times}83mm)$. The axial ratio is 1.37dB at 1.575 GHz, the 2 dB axial ratio bandwidth is 14 $MHz(0.8\%)$. As that result, we could confirm that 3-dimensional structure with attached 'L' shaped plate is proper form for the miniaturization of linear and circular polarization microstrip antenna.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.10 s.352
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• pp.1-9
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• 2006

In this paper, a couple of 10Gb/s transimpedance amplifiers are realized in a 0.18um standard CMOS technology for optical communication applications. First, the voltage-mode inverter TIA(I-TIA) exploits inverter input configuration to achieve larger effective gm, thus reducing the input impedance and increasing the bandwidth. I-TIA demonstrates $56dB{\Omega}$ transimpedance gain, 14GHz bandwidth for 0.25pF photodiode capacitance, and -16.5dBm optical sensitivity for 0.5A/W responsivity, 9dB extinction ration and $10^{-12}$ BER. However, both its inherent parasitic capacitance and the package parasitics deteriorate the bandwidth significantly, thus mandating very judicious circuit design. Meanwhile, the current-mode RGC TIA incorporates the regulated cascade input configuration, and thus isolates the large input parasitic capacitance from the bandwidth determination more effectively than the voltage-mode TIA. Also, the parasitic components give much less impact on its bandwidth. RGC TIA provides $60dB{\Omega}$ transimpedance gain, 10GHz bandwidth for 0.25pF photodiode capacitance, and -15.7dBm optical sensitivity for 0.5A/W responsivity, 9dB extinction ration and $10^{-12}$ BER. Main drawback is the power dissipation which is 4.5 times larger than the I-TIA.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.1
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• pp.18-24
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• 2002

n this paper, we have fabricated pseudomorphic high electron mobility transistors (PHEMT) with a 0.2 ${\mu}{\textrm}{m}$ wide-head T-shaped gate using electron beam lithography by a dose split method. To make the T-shape gate with gate length of 0.2 ${\mu}{\textrm}{m}$ and gate head size of 1.3 ${\mu}{\textrm}{m}$ we have used triple layer resist structure of PMMA/P(MMA-MAA)/PMMA. The DC characteristics of PHEMT, which has 0.2 ${\mu}{\textrm}{m}$ of gate length, 80 ${\mu}{\textrm}{m}$ of unit gate width and 4 gate fingers, are drain current density of 323 ㎃/mm and maximum transconductance 232 mS/mm at $V_{gs}$ = -1.2V and $V_{ds}$ = 3V. The RF characteristics of the same device are 2.91㏈ of S21 gain and 11.42㏈ of MAG at 40GHz. The current gain cut-off frequency is 63GHz and maximum oscillation frequency is 150GHz, respectively.ively.

• Journal of IKEEE
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• v.14 no.1
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• pp.65-74
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• 2010

The Digital TV(DTV) standard has ushered in a new era in TV broadcasting and raised a great demand for DTV tuners. There are many challenges in designing a DTV tuner, of which the most difficult part is the frequency synthesizer. This paper presents the design of a frequency synthesizer for DTV Tuners in a $0.18{\mu}m$ CMOS process. It satisfies the DTV(ATSC) frequency band(54~806MHz). A scheme is proposed to cover the full band using only one VCO. The VCO has been designed to operate at 1.6~3.6GHz band such that the LO pulling effect is minimized, and reliable broadband characteristics have been achieved by reducing the variations of VCO gain and frequency step. The simulation results show that the designed VCO has gains of 59~94MHz(${\pm}$17.7MHz/V,${\pm}$23%) and frequency steps of 26~42.5MHz(${\pm}$8.25MHz/V,${\pm}$24%), and a very wide tuning range of 76.9%. The designed frequency synthesizer has a phase noise of -106dBc/Hz at 100kHz offset, and the lock time is less than $10{\mu}$sec. It consumes 20~23mA from a 1.8V supply, and the chip size including PADs is 2.0mm${\times}$1.8mm.

• Journal of Korea Society of Industrial Information Systems
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• v.21 no.1
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• pp.61-70
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• 2016

This paper describes a new PMU(parametric measurement unit) design technique for automatic test equipment(ATE). Only one DDA(differential difference amplifier) is used to force the test signals to DUT(device under test), while conventional design uses two or more amplifiers to force test signals. Since the proposed technique does not need extra amplifiers in feedback path, the proposed PMU inherently guarantees stable operation. Moreover, to measure the response signals from DUT, proposed technique also adopted only one DDA amplifier as an IA(instrument amplifier), while conventional IA uses 3 amplifiers and several resistors. The DDA adopted two rail-to-rail differential input stages to handle full-range differential signals. Gain enhancement technique is used in folded-cascode type DDA to get open loop gain of 100 dB. Proposed PMU design enables accurate and stable operation with smaller hardware and lower power consumption. This PMU is implemented with 0.18 um CMOS process and supply voltage is 1.8 V. Input ranges for each force mode are 0.25~1.55 V at voltage force and 0.9~0.935 V at current force mode.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.5
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• pp.1125-1134
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• 2011

In this paper a wideband frequency synthesizer is designed for DTV tuners using a $0.18{\mu}m$ CMOS process. It satisfies the DTV frequency band(48~1675MHz). A scheme is proposed to cover the full band using only one VCO and reliable broadband characteristics are achieved by reducing the variations of VCO gains and frequency steps. The simulation results show that the designed VCO has frequency range of 1.85~4.22GHz, phase noise at 4.22GHz of -89.7dBc/Hz@100kHz, gains of 62.4~95.8MHz/V(${\pm}21.0%$) and frequency steps of 22.9~47.9MHz(${\pm}35.3%$). The designed VCO has a phase noise of -89.75dBc/Hz at 100kHz offset. The designed synthesizer has a lock time less than $0.15{\mu}s$. The measured VCO tuning range is 2.05~3.4GHz. The frequency range is shifted down but still satisfy the target range owing to the design for enough margin. The designed circuit consumes 23~27mA from a 1.8V supply, and the chip size including PADs is $2.0mm{\times}1.5mm$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.9
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• pp.6247-6253
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• 2015

This paper presents the transient-response improved LDO regulator based on parallel error amplifiers. The proposed LDO regulator consists of an error amplifier (E/A1) which has a high gain and narrow bandwidth and a second amplifier (E/A2) which has low gain and wide bandwidth. These amplifiers are in parallel structure. Also, to improve the transient-response properties and slew-rate, some circuit block is added. Using pole-splitting technique, an external capacitor is reduced in a small on-chip size which is suitable for mobile devices. The proposed LDO has been designed and simulated using a Megna/Hynix $0.18{\mu}m$ CMOS parameters. Chip layout size is $500{\mu}m{\times}150{\mu}m$. Simulation results show 2.5 V output voltage and 100 mA load current in an input condition of 2.7 V ~ 3.3 V. Regulation Characteristic presents voltage variation of 26.1 mV and settling time of 510 ns from 100mA to 0 mA. Also, the proposed circuit has been shown voltage variation of 42.8 mV and settling time of 408 ns from 0 mA to 100 mA.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.21 no.3
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• pp.62-72
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• 2022

In this study, a miniaturized GPS band(L₁ : 1.575 GHz) antenna that can be mounted on a small drone is proposed. The miniaturization was designed by applying the perturbation method based on the λ/4 microstrip antenna and lengthening the current path at the edge of the patch. The miniaturized antenna was fabricatred such that it could be attached to the surface of styrofoam(ε_r=1.06, t=10 mm) having a size of 10 mm × 9 mm × 10 mm (0.05 λ × 0.05 λ × 0.05 λ). The thickness and length of the feeding line and the spacing between short stubs were adjusted for impedance matching. S₁₁ was found to be -18.8 dB at the center frequency of the fabricated antenna, 1.575 GHz. The radiation pattern measurement results show that the maximum gain of E_θ is 1.87 dBi in 0 directions in the xz-plane, and that E_θ is an omnidirectional characteristic with an average gain of -1.7 dBi in the yz-plane. It was found that the antenna can be used as an ultra-small microstrip antenna, which can be mounted on a small dron for GPS, and is capable of preserving a reduction ratio of 98.8% as compared to a λ/2 microstrip patch antenna.