• The Transactions of the Korean Institute of Power Electronics
• /
• v.10 no.4
• /
• pp.347-355
• /
• 2005

In this paper, a new continuous~time small signal model of an average current mode control is proposed. Sampling effect Is considered to obtain the proposed small signal model. By the proposed model, the high frequency response characteristics of current loop gain might be predicted accurately compared to previous models. And this leads the prediction of inductor current response of the proposed model to be accurate compared to others. In order to show the usefulness of the proposed model, prediction results of the proposed model are compared to those of the circuit level simulator, PSIM and experiment.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.11 no.4
• /
• pp.307-312
• /
• 2006

This paper proposes the SRM drive system, which accurately estimates the phase currents from the DC-link current to drive SRM instead of detecting the three-phase currents. In addition, the detecting circuit of DC-link current is also proposed to increase the resolution and decrease the off-set influence. Comparing with the general drive system based on the phase current, it is verified through the experiments that the proposed SRM drive system based on the DC-link current has the good performance in steady-state response of the speed control. Using the DC-link current, all of the 3-phase currents can be easily estimated for driving the SRM.

• Journal of IKEEE
• /
• v.23 no.2
• /
• pp.364-369
• /
• 2019

The ratios of compliant branch circuit of leakage current and insulation resistance were 68.4% and 90.8%, respectively at the lamp load, 64.6% and 96.5% at the heat load, 86.7% and 88.9% at the power load. Limit of residual current of the zero phase secondary current value at the zero phase primary current was 100 A when rated primary current 400 A more than. The reason why the ratio of branch circuit of the leakage current was less than the ratio of compliant branch circuit of the insulation resistance might be that the leakage current includes the capacitive leakage current and the zero phase current.

• Journal of IKEEE
• /
• v.27 no.3
• /
• pp.308-312
• /
• 2023

The gate current sensing structure was proposed to more effectively control the regulation of the output voltage when the LDO regulator occurs in an overshoot or undershoot situation. In a typical existing LDO regulator, the regulation voltage changes when the load current changes. However, the operation speed of the pass transistor can be further improved by supplying/discharging the gate terminal current in the pass transistor using a gate current sensing structure. The input voltage of the LDO regulator using the gate current sensing structure is 3.3 V to 4.5 V, the output voltage is 3 V, and the load current has a maximum value of 250 mA. As a result of the simulation, a voltage change value of about 12 mV was confirmed when the load current changed up to 250 mA.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.10 no.1
• /
• pp.111-116
• /
• 2006

In this paper, the image sensor using the a-Si:H TFT is proposed. The optimum amorphous silicon thin film is deposited using plasma enhanced chemical vapor deposition (PECVD). TFT and photodiode both with the thin film are fabricated and form image sensor. The photodiode shows that Idark is $10^{-12}A$, Iphoto is $10^{-9}A$ and Iphoto/Idark is $10^3$, respectively. In the case of a-Si:H TFT, it indicates that Ion/Ioff is $10^6$, the drain current is a few ${\mu}A$ and Vth is $2\~4$ volts. For the analysis on the fabricated image sensor, the reverse bias of -5 voltage in ITO of photodiode and $70{\mu}sec$ pulse in the gate of TFT are applied. The image sensor with good property was conformed through the measured photo/dark current.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.42 no.12
• /
• pp.19-26
• /
• 2005

We have studied the relationship between static mode behavior and dynamic characteristics of multiple transverse-mode VCSELs by measuring the modal L-I and I-V characteristics. Dependence of the resonance frequencies of RIN (relative intensity noise) spectra on the injection current can be understood by modal L-I characteristics and mode-coupling effects. Each transverse mode behaves as an independent diode laser with the different threshold current in large active-area VCSELs, and the multiple-step turn-on is observed when step-current input is applied. This multiple-step turn-on is a result of different turn-on delay times of the transverse modes. Since the multiple-step turn-on increases the rise-time significantly, the wide active-area VCSELs are not suitable for high-speed optical transmitters unless the input current is adjusted for single transverse-mode operation.

• Journal of the Korean Institute of Gas
• /
• v.20 no.5
• /
• pp.34-39
• /
• 2016

This study is experimentally investigated brown gas generative properties with the changes of cell areas, a electrolyte concentration and ampere current for the developments of small brown gas generation equipments usable in diesel cars. Electrolysis reactors have been manufactured as SMT30, SMT50, SMT50-1, SMT70, SMT90, respectively on various surface areas and different positions anode and cathode. Thus, the brown gas generative properties on reactors tended to increase as surface area increase, and show differences in different electrode positions. However, the effect on electrolyte concentration had increased with a decreasing electrolyte concentration of NAOH 3~1‰, and the brown gas generative properties on ampere of SMT30, SMT50, SMT50-1, SMT70, SMT90 have shown to be $0.74{\ell}/10min$, $1.0{\ell}/10min$, $1.10,{\ell}/10min$, $0.97{\ell}/10min$, $1.13{\ell}/10min$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.381-381
• /
• 2012

유기물/무기물 나노 복합체를 이용하여 제작한 메모리 소자는 저전력 구동, 간단한 공정, 플렉서블한 성격과 같은 장점 때문에 많은 연구가 진행되고 있다. 다양한 유기물/무기물 나노 복합체를 이용한 비휘발성 메모리 소자에 대한 연구는 많이 진행되었으나, fullerene 계열의 [6,6]-phenyl-C85 butyric acid methyl ester (PCBM) 나노 입자와 poly (methylmethacrylate) (PMMA)의 나노 복합체를 사용하여 제작한 유기 쌍안정성 메모리 소자의 전기적 특성과 메커니즘에 대한 연구는 미흡하다. 본 연구에서는 기억층으로 PMMA 박막 안에 분산되어 있는 PCBM 나노 입자를 트랩층으로 사용하는 메모리 소자를 제작하여 전기적 특성 및 안정성에 대하여 관찰하였다. 소자제작을 위하여 PCBM 나노 입자를 PMMA와 함께 용매인 클로로벤젠에 용해한 후에 초음파 교반기를 사용하여 두 물질을 고르게 섞었다. Indium-tin-oxide 가 코팅된 glass위에 PCBM 나노 입자와 PMMA가 섞인 나노 복합체를 스핀 방법으로 적층한 후, 열을 가해 클로로벤젠을 제거하여 PCBM 나노 입자가 PMMA 안에 분산되어 있는 전하 수송 층을 형성하였다. 형성된 전하수송 층 위에 열 증착 방식으로 상부 Al 전극을 형성하여 유기 쌍안정성 메모리 소자를 제작하였다. 제작된 소자의 전류-전압 (I-V) 측정 결과 특정 전하 수송 층의 두께에서는 큰 ON/OFF 전류 비율을 보여준다. PMMA만을 사용한 소자에서는 I-V 메모리 특성이 나타나지 않는 결과로부터 PCBM 나노 입자가 전하 수송 층 내에서 메모리 특성의 역할을 한다는 것을 보여준다. 전류-시간 (I-t) 측정 결과로 소자의 ON/OFF 전류 비율이 시간이 지남에 따라 큰 감쇠 없이 104 s까지 103값을 지속적으로 유지되어 메모리 소자의 안정성을 보여주었다. 실험의 결과로 PCBM이 포함된 메모리 소자의 메커니즘과 전하 수송 층의 두께에 따른 메모리 특성을 설명하였다.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.11 no.1
• /
• pp.83-88
• /
• 2007

The reliability characteristics of class-E RF power amplifier are studied, based on the degradation of MOSFET electrical characteristics. The class-E power amplifier operates as a switch mode operation to achieve high efficiency. This operation leads to high voltage stress when MOSFET switch is turned-off. The increase in threshold voltage and decrease in nobility caused by high voltage stress leads to a drop in the drain current. In the class-E power amplifier the effects caused by the degradation of MOSFET drain current is a drop of the power efficiency and output power. But the small inductor in the class-E load network allows the reliability to be improved. After $10^{7}\;sec$. the drain current decreases 46.3% and the PAE(Power Added Efficiency) decreases from 58% to 36% when the load inductor is 1mH. But when the load inductor is 1nH the drain current decreases 8.89% and the PAE decreases from 59% to 55%.

• Journal of Astronomy and Space Sciences
• /
• v.19 no.1
• /
• pp.75-88
• /
• 2002

The climatological characteristics of the polar ionosphere is examined in terms of the ionospheric conductance and electric field. For this purpose, 109 days of measurements from the Sondrestrom incoherent scatter radar are utilized. By combining these two quantities, it is possible to deduce the overhead ionospheric current distributions. The ionospheric current density thus obtained is compared with the corresponding ground magnetic disturbance. Also examined is the effect of the field-aligned current on the ground magnetic disturbance, particularly on the D component Several interesting climatological characteristics about the ionosphere over the Sonderstrom are apparent from this study. (1) The conductance distribution is mainly due to solar EUV radiation during day-time On the other hand, the conductance distribution during the night-time is very low. (2) The conductance distribution one. the polar cap region during the day-time is controlled mostly by the solar EUV radiation, while it is extremely low during night-time wish the Hall and Pedersen conductances being 1.6 and 1.2 siemen, respectively (3) The region of the maximum N-S electric field tend to locate in the dayside sector. The E-W component of the electric field is stronger than that over Chatanika (4) The E-W auroal inospheric current (J/sub E/) is more important in the sunlit hemisphere than the night hemisphere. And a strong southward current is noted in the prenoon sector (5) There is a significant correlation between the overhead ionospheric current and the simultaneously observed ground magnetic disturbance. However, the assumption for the infinite sheet current approximation is far from realistic, underestimating the current density. And the correlation between ${\Delta}H$ and J/sub E/ is higher than the one between ${\Delta}D$ and J/sub N/ , indicating that field-aligned current affects significantly ${\Delta}D$.