• The Journal of the Korea institute of electronic communication sciences
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• v.8 no.10
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• pp.1477-1483
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• 2013

This paper proposes a low-voltage current-mode integrator for a continuous-time current-mode baseband channel selection filter. The low-voltage current-mode linear cascode integrator is introduced to offer advantages of high current gain and improved unity-gain frequency. The proposed current-mode integrator has fully differential input and output structure consisting of CMOS complementary circuit. Additional cascode transistors which are operated in linear region are inserted for bias to achieve the low-voltage feature. Frequency range is also controllable by selecting proper bias voltage. From simulation results, it can be noticed that the implemented integrator achieves design specification such as low-voltage operation, current gain, and unity gain frequency.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.12 no.1
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• pp.93-102
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• 1998

This paper describes to control system for AC to DC converter which has been widely used to power source in industrial factory and domestics. In this paper, three-phase PWM AC to DC Boost converter that operates with unity power factor and sinusodial input line currents is presented. The current control of this converter is based on the predicted current control strategy with fixed switching frequency and the line currents track to reference currents within one sampling time interval. By using this control strategy low ripples in the output current and the voltage as well as fast dynamic response are achieved with small dc link capacitance employed.ployed.

• Journal of Satellite, Information and Communications
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• v.7 no.2
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• pp.72-75
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• 2012

A solar array makes a Solar Array Regulator (SAR) for Low-Earth-Orbit satellite have different small signal characteristic. Therefore, an Average-Current-Mode (ACM) controller cannot control the BUCK-BOOST type SAR which operates in a current region of the solar array. In this paper, we present the Pseudo-Continuous Current Mode (PCCM) BUCK-BOOST Type SAR which can be controller by the ACM Controller. We explain the circuit operation of the PCCM BUCK-BOOST Type SAR, derive its small signal transfer function and design ACM Controller. Finally, we verify the ACM control of the PCCM BUCK-BOOST Type SAR by using a simulation.

• Applied Chemistry for Engineering
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• v.19 no.2
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• pp.228-235
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• 2008

Nickel plating thickness increased with the electric current density, and the augmentation was more thick in $6{\sim}10A/dm^2$ than low current. Hull-cell analysis was tested to evaluate the current density. Optimum thickness was obtained at a temperature of $60^{\circ}C$, and the pH fluctuation of 3.5~4.0. Over the Nickel ion concentration of 300 g/L, plating thickness increased with the current density. The rate of decrease in nickel ion concentration was increased with the current density. The quantity of plating electro-deposition was increased at the anode surface, which was correlated with the increase of plating thickness. The plating thickness was increased because of the quick plating speed. However, the condition of the plating surface becomes irregular and the minuteness of nickel plating layer was reduced with the plating rate. After the corrosion test of 25 h, it was resulted in that maintaining low electric current density is desirable for the excellent corrosion resistance in lustered nickel plating. According to the program simulation, the thickness of diffusion layer was increased and the concentration of anode surface was lowered for the higher current densities. The concentration profile showed the regular distribution at low electric current density. The field plating process was controlled by the electric current density and the plating thickness instead of plating time for the productivity. The surface physical property of plating structure or corrosion resistance was excellent in the case of low electric current density.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.1
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• pp.29-34
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• 2004

We present the first demonstration of waveguide-type depleted optical thyristor laser diode with InGaAs/InGaAsP multiple quantum well structure. The measured switching voltage and current are 4.63 V and 10uA respectively. The holding voltage and current are respectively 0.59 V, 20uA. The lasing threshold current at the temperature of $25^{\circ}C$ and $10^{\circ}C$ are 111 mAA and 72.5 mA, respectively. The lasing wavelength is centered at 1.561um at a bias current equal to 1.41 times threshold.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.8
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• pp.752-758
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• 2004

This paper reports on the DC and RF characteristics of AlGaN/InGaN/GaN high electron-mobility transistors (HEMTs) grown by molecular beau epitaxy(MBE) on sapphire substrates. The devices with a 0.5 ${\mu}$m gate-length exhibited relatively flat transconductance(g$\_$m/), which results from the enhanced carrier confinement of the InGaN channel. The maximum drain current was 880 mA/mm with a peak g$\_$m/ of 156 mS/mm, an f$\_$T/ of 17.3 GHz, and an f$\_$MAX/ or 28.7 GHz. In addition to promising DC and RF results, pulsed I-V and current-switching measurements showed little dispersion in the unpassivated AlGaN/InGaN HEMTs. These results suggest that the addition of In to the GaN channel improves the electron transport characteristics as well as suppressing current collapse that is related to the surface trap states.

• Journal of the Korean Applied Science and Technology
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• v.29 no.3
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• pp.421-428
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• 2012

We investigated an electrochemical properties for Langmuir-Blodgett (LB) nano-films of polyimide and phospholipid mixture. LB films of polyamic acid and phospholipid monolayer were deposited by the Langmuir-Blodgett method on the indium tin oxide(ITO) glass. The electrochemical properties measured by cyclic voltammetry with three-electrode system(an Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode) in $KClO_4$ solution. The current of reduction and oxidation range was measured from 1650 mV to -1350 mV, continuously. The scan rates were 50, 100, 150, 200 and 250 mV/s, respectively. As a result, monolayer LB films of polyamic acid and phospholipid mixture was appeared on irreversible process caused by the reduction current from the cyclic voltammogram. Diffusion coefficient (D) effect in the polyamic acid and phospholipid mixture was used in the LAPC with LLPC fewer than the diffusion coefficient values.

• Journal of the Korean Magnetics Society
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• v.23 no.5
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• pp.166-172
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• 2013

This article is to numerically investigate the temperature and heat transfer characteristics of the voice coil in the woofer speaker using ferrofluid with the input currents. The temperature and heat transfer of the major components of the woofer speakers with and without ferrofluid are calculated and analyzed with the increase of the input currents from 10 W to 50 W at an interval of 10W. As results, the temperature of voice coil is linearly increased with an increase of input currents. The temperature of the woofer speaker with ferrofluid is lower 51.0 % than that of the woofer speaker without ferrofluid at the condition of input current 40W and the required input current of the woofer speaker with ferrofluid is lower 42.5 % than that of the woofer speaker without ferrofluid at the condition of voice coil temperature 490 K. In addition, the heat transfer from voice coil to other components for woofer speaker with ferrofluid is higher 51.7 % than that for woofer speaker without ferrofluid.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.71-71
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• 2011

ZnO 반도체가 넓은 에너지띠와 큰 엑시톤 결합에너지를 가지기 때문에 가진 투명 전극, 태양전지, 발광소자 및 메모리와 같은 다양한 전자 및 광전자 소자의 응용에 대한 많은 연구가 활발히 진행되고 있다. 본 논문에서는 절연성 고분자인 폴리스티렌 박막에 분산되어 있는 ZnO 나노 입자를 기억 매체로 사용하는 write-once-read-many times (WORM) 메모리 소자를 제작하고 전기적 성질과 안정성에 대하여 관찰하였다. 화학적 방법으로 형성한 ZnO 나노입자와 폴리스티렌을 N,N-dimethylformamide 용매에 녹인 후 초음파 교반기를 사용하여 나노 복합 소재를 형성하였다. 하부 전극으로 indium-tin-oxide가 증착되어 있는 유리 기판 위에 나노 복합 소재를 스핀코팅 방법으로 도포한 후 열을 가해 잔류 용매를 제거하였다. ZnO 나노입자가 분산되어 있는 폴리스티렌 나노 복합 소재로 구성된 박막위에 상부 전극으로 Al을 열증착하여 메모리 소자를 제작하였다. 전류-전압 측정 결과에서 저전압에서는 전도도가 낮은 OFF 상태를 유지하다 약 1.5 V에서 전도도가 갑자기 증가하여 높은 전도도의 ON 상태로 전이되는 쌍안정성이 관찰되었다. 전류의 ON/OFF 비율은 약 103이며 ON 상태에서 OFF 상태로 전환되지 않는 전형적인 WORM 메모리 소자의 전류-전압 특성을 나타났다. 두 전극 사이에 폴리스티렌 박막으로만 제작된 소자를 제작하여 전류-전압 측정을 하였으나 메모리 특성이 나타나지 않았다. 그러므로 WORM 메모리 특성은 폴리스티렌 박막안의 ZnO 나노입자에 기인함을 알 수 있었다. 제작된 소자에 대해 기억 시간 측정 결과는 ON과 OFF 상태의 전류가 장시간에도 변화가 거의 없는 소자의 안정성을 보여주었다. 이 실험 결과는 ZnO 나노입자가 분산된 폴리스티렌 나노 복합 구조체를 사용하여 안정성을 가진 WORM 메모리 소자를 제작할 수 있음을 보여주고 있다.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.5
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• pp.122-128
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• 2010

This paper presents the characteristics for ground impedance of combined three rods according to distance of current probe and frequency using the fall-of-potential method and the testing techniques to minimize the measuring errors are proposed. The fall-of-potential method is theoretically based on the potential and current measuring principle and the measuring error is primarily caused by the position of auxiliary probes. In order to analyze the effects of ground impedance due to the distance of the current probe and frequency, ground impedances were measured in case that the distance of current probe was located from 5[m] to 20[m] and the measuring frequency was ranged in 55~513[Hz]. The results could be help to determine the position of current probe and the measuring frequency when the ground impedance was measured at grounding system.