• Title/Summary/Keyword: 전력수율

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Development of Silent Discharge Chamber with Al2O3 Dielectric Pellet to Improve Ozone Generation Characteristics (오존발생특성 향상을 위한 강유전성 알루미나 무성방전관의 개발)

  • Kwak, Dong-Joo
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.20 no.7
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    • pp.58-64
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    • 2006
  • Recently deep interests have been paid on the effective generation of ozone, which has been widely used for water treatment, deodorization, color removal, and chemical processing of exhausted smoke. The silent discharge reaction has been proposed as the most effective one in the many ozone generation methods, because the silent discharge can be generated under the conditions of lower applied voltage and power consumption, compared other ones. In this paper, in order to improve the ozone generation and ozone generation efficiency, the conventional silent discharge chamber with $Al_2O_3$ dielectric layer and tubular ferroelectric bed discharge reactor packed with $Al_2O_3$ pellets were made, and the silent discharge of the reactors were studied experimentally. The ozone generation characteristics are also discussed based on the discharge characteristics, especially on the wall charge accumulation properties and power consumption. The results show that the electric charges of discharge tube with bead are around 2.5 times as large as those without bead. In the discharge chamber packed with dielectric beads, the ozone concentration and the energy yield characteristics were also improved, compared with those in the conventional silent discharge reactor.

Hydrogen Gas Production from Biogas Reforming using Plasmatron (플라즈마트론을 이용한 바이오가스 개질로부터 수소생산)

  • Kim, Seong Cheon;Chun, Young Nam
    • Korean Chemical Engineering Research
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    • v.44 no.5
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    • pp.528-534
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    • 2006
  • The purpose of this paper is to investigate the optimal operating condition for the hydrogen production by biogas reforming using the plasmatron induced thermal plasma. The component ratio of biogas($CH_4/CO_2$) produced by anaerobic digestion reactor were 1.03, 1.28, 2.12, respectively. And the reforming experiment was performed. To improve hydrogen production and methane conversion rates, parametric screening studies were conducted, in which there are the variations of biogas flow ratio(biogas/TFR: total flow rate), vapor flow ratio($H_2O/TFR$: total flow rate) and input power. When the variations of biogas flow ratio, vapor flow ratio and input power were 0.32~0.37, 0.36~0.42, and 8 kW, respectively, the methance conversion reached its optimal operating condition, or 81.3~89.6%. Under the condition mentioned above, the wet basis concentrations of the synthetic gas were H2 27.11~40.23%, CO 14.31~18.61%. The hydrogen yield and the conversion rate of energy were 40.6~61%, 30.5~54.4%, respectively, the ratio of hydrogen to carbon monoxide($H_2/CO$) was 1.89~2.16.

A Study of Optimum Growth Rate on Large Scale Ingot CCz (Continuous Czochralski) Growth Process for Increasing a Productivity (생산성 증대를 위한 대구경 잉곳 연속 성장 초크랄스키 공정 최적 속도 연구)

  • Lee, Yu-Ri;Roh, Ji-Won;Jung, Jae Hak
    • Korean Chemical Engineering Research
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    • v.54 no.6
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    • pp.775-780
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    • 2016
  • Recently, photovoltaic industry needs a new design of Czochralski (Cz) process for higher productivity with reasonable energy consumption as well as solar cell's efficiency. If the process uses the large size reactor for increasing productivity, it is possible to produce a 12-inch, rather than the 8-inch. Also the continuous czochralski process method can be maximized to increase productivity. In this study, it was designed to improve the yield value of ingot with optimal condition which reduce consumption of electrical power. It has increased the productivity of the 12-inch ingot process condition by using CFD simulation. I have found optimal growth rate, by comparing each growth rate the interface shape, Temperature gradient, power consumption. As a result, the optimal process parameters of the growth furnace has been derived to improve for the productivity and to reduce energy. This study will contribute to the improvement of the productivity in the solar cell industry.

이중 주파수를 이용한 유도 결합형 플라즈마의 특성 분석

  • Seo, Jin-Seok;Kim, Tae-Hyeong;Mishra, Anurag;Kim, Gyeong-Nam;Yeom, Geun-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.577-577
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    • 2013
  • 플라즈마를 이용하는 공정은 반도체 산업에서 박막트랜지스터, 평면 모니터와 LCD 등 다양한 반도체 및 디스플레이 소자를 제작하는데 중요한 기술 중 하나로 발전되어 왔다. 현재 플라즈마 공정 기술을 이용하여 소자의 크기를 수십 나노 이하로 공정함으로써 수율을 향상시킬 수 있었지만, 소자의 미세화는 그 한계점에 봉착하였다. 그러한 이유로 웨이퍼 사이즈의 크기를 대구경화 시킴으로써 이런 문제점을 극복하고자 하였지만, 대구경 웨이퍼 사이즈에 맞는 차세대 대면적 공정 장비와 그에 따른 플라즈마 소스의 개발과 이를 컨트롤 할 수 있는 능력이 매우 절실하게 되었다. 본 연구에서는 대구경 웨이퍼용 플라즈마 소스를 위해 상대적으로 낮은 압력과 고밀도 플라즈마를 발생시킬 수 있는 유도 결합형 플라즈마원을 사용하였다. 하지만 유도 결합형 플라즈마 소스의 경우 대구경화에 따른 안테나의 길이가 길어짐으로써 생기는 정상파 효과를 피할 수가 없게 되었다. 그러한 이유로, 본 연구에서는 정상파 효과를 줄일 수 있는 상대적으로 낮은 주파수를 사용하는 안테나의 형태를 이용하여 실질적인 공정 영역에 있어서의 균일도 문제를 해결하였다. 또한, 플라즈마의 특성조절을 위해 이중주파수를 사용함 으로써 플라즈마 특성 조절을 하였다. 이러한 형태의 이중주파수를 사용하는 플라즈마 소스를 이용하여 10 mTorr의 Ar/CF4 조건에서 양이온 종들을 PSM (Plasma Sampling Mass spectroscopy, HIDEN Inc.)을 통해 에너지를 분석하였다. 이중 주파수에 있어 전력비율에 따라 IEDs (Ion Energy Distributions)는 많은 변화가 관찰되었으며, 인가하는 입력전력에 따라 E-H mode 전이가 일어남을 관찰할 수 있었다.

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Improvement of the Characteristics of PZT Thin Films deposited on LTCC Substrates (LTCC 기판상에 증착한 PZT 박막의 특성 향상에 관한 연구)

  • Hwang, Hyun-Suk;Kang, Hyun-Il
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.12 no.1
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    • pp.245-248
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    • 2012
  • In this paper, the optimized growing conditions of PZT thin films on low temperature co-fired ceramics (LTCC) substrates are studied. The LTCC technology is an emerging one in the fields of mesoscale (from 10 um to several hundred um) sensor and actuator against silicon based technology due to low cost, high yield, easy manufacturing of 3 dimensional structure, etc. The LTCC substrates with thickness of 400 um are fabricated by laminating 100 um green sheets using commercial power (NEG, MLS 22C). The Pt/Ti bottom electrodes are deposited on the LTCC substrates, then the growing conditions of PZT thin films using rf magnetron sputtering method are studied. The growing conditions are tested under various rf power and gas ratio of oxygen to argon. And the crystallization and ingredient of PZT films are analyzed by X-ray diffraction method (XRD) and energy dispersive spectroscopy (EDS). The optimized growing conditions of PZT thin films are rf power of 125W, Ar/O2 gas ratio of 15:5.

Service Class-Aided Scheduling for LTE (LTE를 위한 서비스 클래스를 고려한 스케줄링 기법)

  • Hung, Pham;Hwang, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.48 no.11
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    • pp.60-66
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    • 2011
  • LTE (Long Term Evolution) supports QoS (Quality of Service) with several service classes. For each class of traffic, a big difference exists on BER (Bit Error Rate) requirement. This leads to a considerable difference in transmission power for various classes of traffic. In this paper, a novel scheduler is designed and proposed for LTE which supports CoS (Class of Service) with the consideration of priority as well as target BER. By the CQI (Channel Quality Indicator) and QCI (QoS Class Identifier), a minimum transmission power is assigned from the target BER for each class of traffic per each user. Hence, with the other information such as user's used rate in the past and the priority of traffic, the probability of occupying channels is determined. The simulation results of Service Class scheduling are compared with that of Maximum Rate and Proportional Fair. The results show that the service class-aided scheduling can improve the throughput of whole system significantly.

Computation of Absorbed Power adiated from a Portable Phone Using FDTD (FDTD 방법을 이용한 휴대폰 전파의 인체 흡수전력량 산출)

  • 김채영;이승학;정백호
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.9 no.4
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    • pp.491-498
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    • 1998
  • Based on FDTD(Finite-Difference Time-Domain) method the human head absorbed power radiated from a 1.8 GHz portable phone is computed. For this computation the 7 layered media for the human head modeling and the monopole antenna attached to metallic box for the portable phone are used. To reflect the real circumstances typical sizes of human heads and portable phones are considered in the calculation. The length of monopole antenna is 4.5 cm. Under the predetermined model the distribution of SAR over the human head are calculated, and from which the place of maximum SAR is near the head skin surface, not deep places far into the head. The computation shows the maximum SAR to be 1.4 mWg somewhat less than the internationally adopted value of 1.6 mW/g.

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InGaN/GaN LED 구조의 Bowing 및 광전특성 개선 연구

  • Lee, Gwan-Jae;Kim, Jin-Su;Lee, Cheol-Ro;Lee, Jin-Hong;Im, Jae-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.192.2-192.2
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    • 2015
  • 본 논문에서는 사파이어 기판 표면에 레이저 처리를 통해 격자 구조(레이저 격자 구조)를 제작하고 InGaN/GaN 발광다이오드(Light-Emitting Diodes, LED) 박막을 성장 한 시료에서 Bowing 특성 변화를 논의한다. 그리고 Bowing 정도에 따른 InGaN/GaN LED의 광학 및 전기적 특성을 Photoluminescence (PL)와 Electroluminescence (EL) Mapping 법을 이용하여 상호 비교 분석하였다. 2-인치 사파이어 기판 상에 레이저 격자 구조의 간격은 1 mm (GS1-LED), 2 mm (GS2-LED), 3 mm (GS3-LED) 로 제작하였으며, 격자 구조가 없는 LED를 기준 시료(C-LED)로 사용하였다. GS1-LED, GS2-LED, GS3-LED의 Bowing 정도는 C-LED 대비 각각 8%, 7.6%, 6.4% 감소하였다. PL Mapping 결과, GS-LED의 발광 파장의 분포 균일도가 C-LED 보다 개선되는 것을 확인하였고, 파장이 C-LED 대비 단파장으로 이동하였다. 또한, GS-LED시료의 PL 강도는 C-LED보다 증가하였고, 특히 GS2-LED의 PL 강도는 C-LED 대비 6.9% 증가 하였다. EL mapping 결과, GS-LED 발광 파장의 분포 균일도는 PL 결과와 유사하게 측정되었으며, 2인치 기판 전체 면적에 대한 GS-LED의 주요 동작전압 및 출력 전력 수율이 C-LED대비 현저히 개선되었다. 사파이어 기판 표면에 제작한 레이저 격자 구조에 따른 InGaN/GaN LED의 광학적, 전기적 특성을 Bowing의 개선과 응력 완화 현상으로 논의 할 예정이다.

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Process Conditions Optimizing the Yield of Power Semiconductors (전력반도체의 수율향상을 위한 최적 공정조건 결정에 관한 연구)

  • Koh, Kwan Ju;Kim, Na Yeon;Kim, Yong Soo
    • Journal of Korean Society for Quality Management
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    • v.47 no.4
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    • pp.725-737
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    • 2019
  • Purpose: We used a data analysis method to improve semiconductor manufacturing yield. We defined and optimized important factors and applied our findings to a real-world process. The semiconductor industry is very cost-competitive; our findings are useful. Methods: We collected data on 15 independent variables and one dependent variable (yield); we removed outliers and missing values. Using SPSS Modeler ver. 18.0, we analyzed the data both continuously and discretely and identified common factors. Results: We optimized two independent variables in terms of process conditions; yield improved. We used DS Leak software to model netting and Contact CD software to model meshes. DS Leak shows smaller the better characterisrics and Contact CD shows normal the best characteristics Conclusion: Various efforts have been made to improve semiconductor manufacturing yields, and many studies have created models or analyzed various characteristics. We not only defined important factors but also showed how to control processing to improve semiconductor yield.

The Ion Generation Characteristics of Charge Neutralizer Applied a Pulse Voltage (펄스전압을 적용한 전하중화장치의 이온발생 특성)

  • Moon, Jae-Duk;Chung, Suk-Hwan
    • Journal of Sensor Science and Technology
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    • v.7 no.2
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    • pp.140-146
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    • 1998
  • Methods and systems to remove static electricity are requested necessarily because the static electricity causes a flammable gas explosion, a fire, reduction of production rate in manufacturing VLSI semiconductor device and so on. In this paper, abrasion and dust contaminant of needle electrode are studied experimentally. And, frequencies and pulse durations of a high frequency pulse source were controlled effectively to minimize the abrasion of needle electrode and control generated numbers of ions. As a result, it is verified experimentally that the ion generation of charge neutralizer increases by using a high frequency pulse source.

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