• Journal of IKEEE
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• v.23 no.2
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• pp.425-430
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• 2019

This work describes the design and characterization of a X-band power amplifier (PA) monolithic microwave integrated circuit (MMIC) using a $0.25{\mu}m$ gate length gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The developed X-band power amplifier MMIC has small signal gain of over 22.7 dB and saturated output power of 43.02 dBm (20.04 W) over the entire band of 9 to 10 GHz. Maximum saturated output power is a 43.84 dBm (24.21 W) at 9.5 GHz. Its power added efficiency (PAE) is 41.0~51.24% and the chip dimensions are $3.7mm{\times}2.3mm$, generating the output power density of $2.84W/mm^2$. The developed GaN power amplifier MMIC is expected to be applied in a variety of X-band radar applications.

• Journal of IKEEE
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• v.24 no.4
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• pp.1093-1097
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• 2020

This work describes the design and characterization of a Ku-band monolithic microwave integrated circuit (MMIC) power amplifier (PA) for satellite communication applications. The device technology used relies on 0.25 ㎛ gate length gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) of wireless information networking (WIN) semiconductor foundry. The developed Ku-band PHEMT MMIC power amplifier has a small-signal gain of 22.2~23.1 dB and saturated output power of 34.8~35.4 dBm over the entire band of 13.75 to 14.5 GHz. Maximum saturated output power is a 35.4 dBm (3.47 W) at 13.75 GHz. Its power added efficiency (PAE) is 30.6~37.83% and the chip dimensions are 4.4 mm×1.9 mm. The developed 3 W PHEMT MMIC power amplifier is expected to be applied in a variety of Ku-band satellite communication applications.

• Journal of the Korea Society for Simulation
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• v.15 no.4
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• pp.79-86
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• 2006

Data transmission in poor environment like underwater has considerably serious delay rate and ewer rate. Like this environment usually has heavy fluctuation of error rate and limited wireless communication state. Therefore, mechanism using in such environment has to be efficient and simple. This paper suggests a new block ack mechanism, called the Pervasive Block ACK (PBA), which transmits aggregated ACKs. This mechanism takes effect on reducing number of traffic, decreasing overhead and delay rate in poor environment networks like underwater. Additionally, we can expect energy consumption. We verify propriety and efficiency of PBA through describing numerical result based analytical formula in this paper.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.4
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• pp.403-409
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• 2013

In this work, a CMOS two stage differential power amplifier which includes Marchand balun, transformer and injection-locked buffer is presented. The power amplifier is targeted for 70 GHz frequency band and fabricated using 65 nm technology. The measurement results show 8.5 dB maximum voltage gain at 71.3 GHz and 7.3 GHz 3 dB bandwidth. The measured maximum output power is 8.2 dBm, input $P_{1dB}$ is -2.8 dBm, output $P_{1dB}$ is 4.6 dBm and maximum power added efficiency is 4.9 %. The power amplifier consumes 102 mW DC power from 1.2 V supply voltage.

• Journal of IKEEE
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• v.26 no.4
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• pp.722-727
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• 2022

In this paper, we present the design and characterization of a power amplifier (PA) monolithic microwave integrated circuit (MMIC) in the X-band. The device is designed using a 0.25 ㎛ gate length AlGaN/GaN high electron mobility transistor (HEMT) on SiC process. The developed X-band AlGaN/GaN power amplifier MMIC achieves small signal gain of over 21.6 dB and output power more than 46.11 dBm (40.83 W) in the entire band of 9 GHz to 10 GHz. Its power added efficiency (PAE) is 43.09% ~ 44.47% and the chip dimensions are 3.6 mm × 4.3 mm. The generated output power density is 2.69 W/mm². It seems that the developed AlGaN/GaN power amplifier MMIC could be applicable to various X-band radar systems operating X-band.

• Proceedings of the Korean Information Science Society Conference
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• 2010.06b
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• pp.313-317
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• 2010

최근에는 반도체 공정 기술의 발달로 인하여 프로세서의 성능은 급속도록 발전하였다. 하지만 프로세서에서 소모되는 전력이 급속도록 증가하고, 이에 따라 발생된 높은 온도는 프로세서 신뢰성에 부정적인 영향을 미치고 있다. 그러므로 최근의 프로세서 설계 시 전력, 온도등도 성능과 함께 중요한 고려사항이다. 프로세서의 신뢰성에 치명적인 영향을 미치는 고온현상을 해결하기 위해서 여러 가지 연구가 이루어지고 있다. 대표적으로 방열 판, 냉각 팬 등을 이용한 기계적인 기법과 동적 온도 관리 기법, 연산 이관 기법등을 적용한 구조적인 기법이 활발하게 연구되고 있다. 이러한 기법들의 적용으로 프로세서의 온도를 효과적으로 제어할 수 있게 되었으나 기계적인 냉각 기법은 냉각 효율성이 높지 않다는 단점이 존재하고, 구조적 설계 기법을 통한 냉각기법은 온도를 제어하기 위해 프로세서의 성능을 저하시키는 치명적인 단점이 존재하기 때문에 두 기법 모두 더 많은 연구가 필요하다. 최근의 프로세서 온도 제어 연구의 초점은 부가적인 장치를 통해 프로세서 내에서 발생 된 온도를 제어하는 기계적인 냉각 기법에서 프로세서 내에서 발생하는 온도를 효과적으로 제어하여 프로세서의 신뢰성과 냉각 비용을 절감할 수 있는 구조적 설계 기법으로 이동하고 있다. 본 논문에서는 연구의 초점이 이동하는 원인에 대해 분석하고자 고성능 프로세서에서의 기계적 냉각 기법의 냉각 효율성을 분석하고자 한다. 실험 결과, 온도를 제어하는 데 있어서 매우 높은 비용($1^{\circ}C$ 감소 당 최대 3.58W, 평균 3.36W)이 소모되는 것으로 나타났다. 향후에는 구조적인 설계 기법의 냉각 효율성을 분석하는 실험을 진행하고자 한다.

• The Transactions of the Korean Institute of Power Electronics
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• v.16 no.5
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• pp.440-447
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• 2011

This paper deals with supercapacitor energy storage system for the compensation of the slow response characteristics of a fuel cell generation system for grid connection. A bidirectional dc/dc converter is used for the charging and discharging of the supercapacitor. The conventional converters use additional clamping circuit, etc. to reduce a voltage spike at the instant of switching and to provide wide range of soft switching. The proposed method provides simplified hardware implementation without any clamping circuit, and soft switching condition for both charging and discharging mode with proper switching patterns. The usefulness of the proposed scheme is verified through simulation and experimental results with 1 kW system.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.11
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• pp.1019-1022
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• 2016

In this paper, a 2~16 GHz GaN wideband power amplifier MMIC s designed and fabricated using the nonuniform power amplifier design technique that utilizes drain shunt capacitors to simultaneously provide each transistor with the optimum load impedance and phase balance between input and output transmission lines. The power amplifier MMIC chip that is fabricated using the $0.25{\mu}m$ GaN HEMT foundry process of Win Semiconductors occupies an area of $3.9mm{\times}3.1mm$ and shows a linear gain of larger than 12 dB and an input return loss of greater than 10 dB. Under a continuous-wave mode, it has a saturated output power of 36.2~38.5 dBm and a power-added efficiency of about 8~16 % in 2 to 16 GHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.12C
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• pp.1240-1248
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• 2006

In this paper, we present a new method for user selection, sub-band allocation, and power allocation in order to maximize the system throughput under the constraint of transmit power in multiuser downlink orthogonal frequency division multiple access (OFDMA) systems with partial channel quality information (CQI). In previous schemes, each user in one cell transmits CQI of all sub-bands to the base station, which requires enormous feedback overhead. Therefore, we proposed an efficient power allocation and modulation and coding selection scheme in which each user transmits partial CQI and one additional information to reduce the amount of feedback. Simulation results show that we can greatly reduce the amount of feedback than full feedback system.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.28 no.1
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• pp.61-71
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• 2018

In the Internet of Things, in which plenty of devices have connection to each other, cryptographically secure Random Number Generators (RNGs) are essential. Particularly, entropy source, which is the only one non-deterministic part in generating random numbers, has to equip with an unpredictable noise source(or more) for the required security strength. This might cause an requirement of additional hardware extracting noise source. Although additional hardware resources has better performance, it is needed to make the best use of existing resources in order to avoid extra costs, such as area, power consumption. In this paper, we suggest an entropy source which uses a multi-threaded program without any additional hardware. As a result, it reduces the difficulty when implementing on lightweight, low-power devices. Additionally, according to NIST's entropy estimation test suite, the suggested entropy source is tested to be secure enough for source of entropy input.