• Journal of the Microelectronics and Packaging Society
• /
• v.13 no.3 s.40
• /
• pp.1-8
• /
• 2006

Higher density integration and adoption of new materials in advanced electronic package systems result in severe electrochemical reliability issues in microelectronic packaging due to higher electric field under high temperature and humidity conditions. Under these harsh conditions, metal interconnects respond to applied voltages by electrochemical ionization and conductive filament formation, which leads to short-circuit failure of the electronic package. In this work, in-situ water drop test and evaluation of corrosion characteristics for SnPb solder alloys in D.I. water and NaCl solutions were carried out to understand the fundamental electrochemical migration characteristics and to correlate each other. It was revealed that electrochemical migration behavior of SnPb solder alloys was closely related to the corrosion characteristics, and Pb was primarily ionized in both D.I. water and $Cl^{-}$ solutions. The quality of passive film formed at film surface seems to be critical not only for corrosion resistance but also for ECM resistance of solder alloys.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.53 no.5
• /
• pp.69-76
• /
• 2016

Current driving capability of MCT (MOS Controlled Thyristor) is determined by turn-off capability of conducting current, that is off-FET performance of MCT. On the other hand, having a good turn-on characteristics, including high peak anode current ($I_{peak}$) and rate of change of current (di/dt), is essential for pulsed power system which is one of major application field of MCTs. To satisfy above two requirements, careful control of on/off-FET performance is required. However, triple diffusion and several oxidation processes change surface doping profile and make it hard to control threshold voltage ($V_{th}$) of on/off-FET. In this paper, we have demonstrated the effect of $V_{th}$ adjustment ion implantation on the performance of MCT. The fabricated MCTs (active area = $0.465mm^2$) show forward voltage drop ($V_F$) of 1.25 V at $100A/cm^2$ and Ipeak of 290 A and di/dt of $5.8kA/{\mu}s$ at $V_A=800V$. While these characteristics are unaltered by $V_{th}$ adjustment ion implantation, the turn-off gate voltage is reduced from -3.5 V to -1.6 V for conducting current of $100A/cm^2$ when the $V_{th}$ adjustment ion implantation is carried out. This demonstrates that the current driving capability is enhanced without degradation of forward conduction and turn-on switching characteristics.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.44 no.5
• /
• pp.8-14
• /
• 2007

In this paper, $HfO_2$/Hf stacked film has been applied as the gate dielectric in MOS devices. The $HfO_2$ thin film was deposited on p-type (100) silicon wafers by atomic layer deposition (ALD) using TEMAHf and $O_3$ as precursors. Prior to the deposition of the $HfO_2$ film, a thin Hf metal layer was deposited as an intermediate layer. Round-type MOS capacitors have been fabricated on Si substrates with 2000${\AA}$-thick Al or Pt top electrode. The prepared film showed the stoichiometric components. At the $HfO_2$/Si interface, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. It seems that the intermediate Hf metal layer has a benefit for the enhancement of electric characteristics of gate dielectric in $HfO_2$/Si structure.

• Journal of the Korean Chemical Society
• /
• v.27 no.3
• /
• pp.183-188
• /
• 1983

The catalytic oxidation of $SO_2$ has been investigated in the presence of vacuum-activated 10 mol % Ni-doped ${\alpha}-Fe_2O_3$ under various partial pressures of $SO_2\;and\;O_2$ at temperatures from 320 to $440{\circ}C$. Over the temperature range $320{\sim}440{\circ}C$, the activation energy is 13.8 $kcal{\cdot}mol^{-1}$. The oxidation rates have been correlated with 1.5 order kinetics; first order with respect to $SO_2$ and 0.5 order with respect to $O_2$. From the kinetic data and conductivity measurements, the adsorption, oxidation mechanism of $SO_2$ and the defect structure of vacuum-activated 10 mol % Ni-doped {\alpha}-Fe_2O_3$ are suggested. $O_2\;and\;SO_2$ appear to be adsorbed essentially as ionic species. Two surface sites, probably an $O^{2-}$ lattice and an oxygen vacancy which is induced by Ni-doping, might be required to adsorb $SO_2\;and\;O_2$. The conductivity measurements and kinetic data indicate that the adsorption process of $SO_2\;{(SO_2+O^{2-}}_{(latt)}{\rightleftharpoons}{{SO_3}^-}_{(ads)}+e')$ is the rate-determining step.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.274-274
• /
• 2014

금속칼코게나이드 화합물중 하나인 $MoS_2$는 초저 마찰계수의 금속성 윤활제로 널리 사용되고 있으며 흑연과 비슷한 판상 구조를 지니고 있어 기계적 박리법을 통한 그래핀의 발견 이후 2차원 박막 합성법에 대한 활발한 연구가 진행되고 있다. 최근 다양한 응용이 진행 중인 그래핀의 경우 높은 전자이동도, 기계적 강도, 유연성, 열전도도 등 뛰어난 물리적 특성을 지니고 있으나 zero-bandgap으로 인한 낮은 on/off ratio는 thin film transistor (TFT), 논리회로(logic circuit) 등 반도체 소자 응용에 한계가 있다. 하지만 $MoS_2$는 벌크상태에서 약 1.2 eV의 indirect band-gap을 지닌 반면 단일층의 경우 1.8 eV의 direct-bandgap을 나타내고 있다. 또한 단일층 $MoS_2$를 이용하여 $HfO_2/MoS_2/SiO_2$ 구조의 트랜지스터를 제작하였을 때 $200cm^2/v^{-1}s^{-1}$의 높은 mobility와 $10^8$ 이상의 on/off ratio 나타낸다는 연구가 보고되어 있어 박막형 트랜지스터 응용을 위한 신소재로 주목을 받고 있다. 한편 2차원 $MoS_2$ 박막을 합성하기 위한 대표적인 방법인 기계적 박리법의 경우 고품질의 단일층 $MoS_2$ 성장이 가능하지만 대면적 합성에 한계를 지니고 있으며 화학기상증착법(CVD)의 경우 공정 gas의 분해를 위한 높은 온도가 요구되므로 박막형 투명 트랜지스터 응용을 위한 플라스틱 기판으로의 in-situ 성장이 어렵기 때문에 이를 보완할 수 있는 $MoS_2$ 박막 합성 공정 개발이 필요하다. 특히 Plasma enhanced chemical vapor deposition (PECVD) 방법은 공정 gas가 전기적 에너지로 분해되어 chamber 내부에서 cold-plasma 형태로 존 재하기 때문에 박막의 저온성장 및 대면적 합성이 가능하며 고진공을 바탕으로 합성 중 발생하는 오염 요소를 효과적으로 제어할 수 있다. 본 연구에서는PECVD를 이용하여 plasma power, 공정압력, 공정 gas의 유량 등 다양한 공정 변수를 조절함으로써 저온, 저압 조건하에서의 $MoS_2$ 박막 성장 가능성을 확인하였으며 전구체로는 Mo 금속과 $H_2S$ gas를 사용하였다. 또한 향후 flexible 소자 응용을 위한 플라스틱 기판의 녹는점을 고려하여 공정 온도는 $300^{\circ}C$ 이하로 설정하였으며 합성된 $MoS_2$ 박막의 두께 및 화학적 구성은 Raman spectroscopy를 이용하여 확인 하였다. 공정온도 $200^{\circ}C$와 $150^{\circ}C$에서 성장한 $MoS_2$ 박막의 Raman peak의 경우 상대적으로 낮은 공정온도로 인하여 Mo와 H2S의 화학적 결합이 감소된 것을 관찰할 수 있었고 $300^{\circ}C$의 경우 약 $26{\sim}27cm^{-1}$의 Raman peak 간격을 통해 5~6층의 $MoS_2$ 박막이 형성 된 것을 확인할 수 있었다.

• Parasites, Hosts and Diseases
• /
• v.26 no.3
• /
• pp.155-162
• /
• 1988

Surface membrane proteins of virulent RH strain and tissue cyst-forming Fukaya strain of Toxoplasma gondii were analysed by SDS-polyacrylamide gel electrophoresis after LPO-catalyzed surface iodination and lectin blotting, then identified the zoite-specific antigens. Prior to the analyses, purification of RH tachyzoites from mouse peritoneal exudate and of Fukaya bradyzoites from mouse brain tissues were performed by centrifugation - on the discontinuous Percoll density-gradient. Ta- chysoites were obtained at the interface of 50U and 60% Percoll solution and brain cysts were harvested at the interfaces of 40-50% and 50-60%, then bradyzoites were obtained by treating the cysts with hypertonic solution. The LPO-catalyzed iodination detected 15 KDa and 14 KDa proteins o( brady- zoites and 30 KDa protein of tachysoites as major bands with several other minor bands. But Con A blotting revealed some bands of 200 K∼50 KDa glycoproteins of bradyzoites and 52 KDa band as major and minor bands of 33 K∼20 KDa of tachyzoites. Phytohemagglutinin did not detect any band in the two forms. EITB with anti- Fukaya antibody and anti-RH antibody revealed cross-reactivities between the two forms. Despite the cross-reactivity, anti-Fukaya antibody reacted with 15 KDa band of bradyzoites specifically and, anti-RH antibody with 52 KDa, 30 KDa, and 25 KDa bands of tachyzoites, respectively. It was identified that 15 KDa protein in bradyzoite, which was not a glycoprotein, was a major membrane protein with sufficient antigenicity, and in the case of tacky- zoite, 52 KDa surface glycoprotein (gp52) with specific antigenicity might be added to the major surface protein, p30.

• Transactions of the Korean hydrogen and new energy society
• /
• v.12 no.1
• /
• pp.29-38
• /
• 2001

The alloys $ZrMn_2Ni_x$ (x=0.0, 0.3, 0.6, 0.9 and 1.2) as the alloys of Zr-Mn-Ni three component system were prepared and their hydrogen-storage properties and their electrochemical properties were investigated. The C14 Laves phase formed in all the alloys $ZrMn_2Ni_x$. Among these alloys $ZrMn_2Ni_{0.6}$ was activated relatively easily(after about 11 charge-discharge cycles), and had the largest discharge capacity(max. 45mAh/g). For all the alloys Zr was dissolved most easily into the 6M KOH solution. More Mn and Ni were dissolved from the $ZrMn_2Ni_{0.6}$ alloy than from the other alloys. Due to the active charge and discharge of the $ZrMn_2Ni_{0.6}$ alloys, related to the easier activation and the larger discharge capacity, Zr, Mn and Ni in this alloy were considered to be dissolved more easily into the 6M KOH solution, compared with the other alloys.

• Journal of the Korean Chemical Society
• /
• v.25 no.6
• /
• pp.351-360
• /
• 1981

Ultraviolet spectrophotometric investigations have been carried out on the system of durene with iodine, bromine, iodine monochloride and iodine monobromide in carbon tetrachloride. The results reveal the formation of the charge transfer complexes of the type, $C_6H_2(CH_3)_4{\cdot}X_2$ or $C_6H_2(CH_3)_4{\cdot}IX$(X denotes halogen atoms). The equilibrium constant were obtained in consideration of that absorption maxima due to the formation of the charge transfer complexes shift to blue with the increasing temperatures. The thermodynamic parameters, ${\Delta}H,\;{\Delta}G\;and\;{\Delta}S$ for the formation of the charge transfer complexes were calculated from these values. These results indicate that the relative stabilities of the durene complexes at each temperature decrease in the order, $ICl>IBr>I_2>Br_2$. This order may be a measure of their relative acidities toward durene, which is explained in terms of the relative polarizabilities of halogen molecules and the relative electronegativities of halogen atoms. These results combined with previous study of this series indicated that the relative stabilities of the polymethylbenzene complexes with iodine increase in the order; Benzene

• Journal of the Korean Chemical Society
• /
• v.20 no.5
• /
• pp.323-332
• /
• 1976

The x or $x^0+x'$ values of the nonstoichiometric chemical formula $TiO_{2-x}$ or $Ti_{2-(x^0+x')}$ have been measured by a specially made magnetic quartz microbalance in a temperature range from 600 to $1300^{\circ}C$ under oxygen pressures of $1{\times}10^{-6} to 1 atm. The standard x or $x^0$ value of the rutile is 0.00148. The x values $under_xoxygen$ pressure of 1 atm decrease with temperatures and then the stoichiometric rutile (or x = 0) is formed at $1130^{\circ}C$. The x values varied between 0.00148 and 0.01719 at a temperature range from 600 to $1300^{\circ}C$ under $1{\times}10^{-9}{\sim}1{\times}10^{-2}$ atm oxygen pressures. The enthalpies of formation of the nonstoichiometric rutile, $H_f$, varied between 21.05 and 29.97 Kcal/mole under the above conditions. The 1/n values calculated from the plots of log X' vs. log $Po_2$ are -{\frac{1}{2}}{\sim}-{\frac{1}{4}} under low oxygen pressure range of $1{\times}10^{-6}\;to\;1{\times}10^{-4}$ atm. Many physical properties of the titanium dioxide, such as the stability of the rutile, Electrical conductivity, catalytic activity and defects, can be explained through the x values and the thermodynamic data calculated from the temperature and oxygen pressure dependences of the x' values.

• Journal of the Korean Chemical Society
• /
• v.25 no.2
• /
• pp.75-84
• /
• 1981

Ultraviolet spectrophotometric investigations have been carried out on the systems of mesitylene with iodine, bromine, iodine monochloride and iodine monobromide in carbon tetrachloride. The results reveal the formation of the charge transfer complexes of the type, $C_6H_3(CH_3)_3{\cdot}X_2$ or $C_6H_3(CH_3)_3{\cdot}IX$ (X denotes halogen atoms). The equilibrium constants were obtained in consideration of that absorption maxima due to the formation of the charge transfer complexes shift to blue with the increasing temperatures. Thermodynamic parameters, ${\Delta}H$, ${\Delta}G$ and ${\Delta}S$ for the formation of the charge transfer complexes were calculated from these values. These results indicate that the relative stabilities of the mesitylene complexes at each temperature decrease in the order, ICl > IBr > $I_2$ > $Br_2$. This order may be a measure of their relative acidities toward mesitylene, which is explaned in terms of the relative polarizabilities of halogen molecules and the relative electronegativities of halogen atoms. These results combined with previous study of this series indicated that the relative stabilities of the polymethylbenzene complexes with iodine increase in the order Benzene < Toluene < Xylene < Mesitylene Thus, analysis of these findings is discussed.