• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.4
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• pp.164-168
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• 2003

The initial stage of copper electrodeposition has been known to be very important role for morphology and physical properties after final growth. The factors affecting the nucleation are electrode, current density, electrolyte and temperature. Current studies has illuminated the initial nucleation of copper electrodeposition in the viewpoint of the surface status of electrode and analyzed using EIS and SEM observation

• Journal of the Microelectronics and Packaging Society
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• v.19 no.2
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• pp.67-72
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• 2012

In recent days, the wire width of IC is narrowed and the degree of integration of IC is increased to obtain the higher capacity of the devices in electronic industry. And then the surface quality of FCCL(Flexible Copper Clad Laminate) became increasingly important. Surface defects on FCCL are bump, scratch, dent and so on. In particular, bumps cause low reliability of the products. Even though there are bumps on the surface, if leveling characteristic of plating solution is good, it does not develop significant bump. In this study, the leveling characteristics of additives are investigated. The objective of study is to improve the leveling characteristic and reduce the surface step through additives and plating conditions. The additives in the electrodeposition bath are critical to obtain flat surface and free of defects. In order to form flat copper surface, accelerator, suppressor and leveler are added to the stock solution. The reason for the addition of leveler is planarization surface and inhibition of the formation of micro-bump. Levelers (SO(Safranin O), MV(Methylene Violet), AB(Alcian Blue), JGB(Janus Green B), DB(Diazine Black) and PVP(Polyvinyl Pyrrolidone) are used in copper plating solution to enhance the morphology of electroplated copper. In this study, the nucleation and growth behavior of copper with variation of additives are studied. The leveling characteristics are analyzed on artificially fabricated Ni bumps.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.167.2-167.2
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• 2017

수지상 구리분말은 하나의 상(statue)이 복수의 접점(contact point)를 제공하며 표면적이 넓은 구조적인 특징으로 인해 발열기판 전도성 페이스트 등 다양한 전기 전가 분야에 활용되어왔다. 때문에 본 연구에서는 전해도금방법으로 수지상 구리분말이 형성될 때 첨가제가 수지상의 형상에 어떠한 영향을 미치는지 분석하였다. 첨가제는 PEG, JGB를 사용하여 농도별로 실험을 진행하였다. SEM 이미지 분석결과 첨가제가 추가함에 따라 수지상이 미세해지며 첨가제의 농도가 증가함에 따라 DAS(dendrite arm spacing)값이 감소하여 표면적이 증가하였다. BET 비표면적 분석결과 PEG($1.882m^2/g$)보다 JGB($2.119m^2/g$)에서 표면적을 넓히는 효과가 뛰어났다.

• Applied Chemistry for Engineering
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• v.27 no.1
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• pp.21-25
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• 2016

When copper alloy is used in etching process for the production of lead frame, the high concentration of heavy metals, such as iron, nickel and zinc may be included in the etching waste. Those etching waste is classified as a specified one. Therefore a customized design was designed for the purification process of the lead frame etching waste liquid containing high concentrations of heavy metals for the production of an electroplating copper(II) oxide. Since the lead frame etching waste solution contains highly concentrated heavy metal species, an ion exchange method is difficult to remove all heavy metals. In this study, a copper(I) chloride was manufactured by using water solubility difference related to the reduction-oxidation method followed by the reunion of copper(II) chloride using sodium sulfate as an oxidant. The hydrazine was chosen as a reducing agent. The optimum added amount was 1.4 mol per 1.0 mol of copper. In the case of removal of heavy metals by using the combination of reduction-oxidation and ion exchange resin methods, 4.3 ppm of $Fe^{3+}$, 2.4 ppm of $Ni^{2+}$ and 0.78 ppm of $Zn^{2+}$ can be reused as raw materials for electroplating copper(II) oxide when repeated three times.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.1
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• pp.7-11
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• 2003

The semiconductor chips or electronic components generate heat, which causes malfunction of the parts when it was not cooled properly. Bulky heat sink and cooling fan are used to get rid of the heat. However, with this bulky system, it is hard to integrate the electronics system in a small scale. The cooling efficiency of the system depends on the surface area of the heat sink, thermal conductivity of the material and the method of integration. In order to develop a novel cooling system, a micro-heatsink with a large surface area while retaining small volume was fabricated by electroless deposition of gold/copper inside a Track-etched membrane. The structure of the micro-heatsink was investigated using SEM or optical microscope. It was also found that the micro-heatsink is more efficient than a flat copper plate.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.37 no.2
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• pp.155-161
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• 2013

In this study, a metal-plated polycarbonate was adopted as a material for bipolar plates in a polymer electrolyte membrane fuel cell (PEMFC). The coated layers included 40-${\mu}m$-thick copper, 10-${\mu}m$-thick nickel, and 0.3-${\mu}m$-thick gold that respectively played the roles of current conduction, adhesion between copper and gold, and minimization of surface corrosion. The maximum power of the air-breathing PEMFC with polycarbonate bipolar plates was $120mW/cm^2$, which was similar to that of graphite bipolar plates. Finally, the maximum power of a 12-cell stack of polycarbonate bipolar plates was $132.7mW/cm^2$, and it had an operating time of 12 h. Therefore, this was considered a suitable material for bipolar plates in PEMFCs.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1903-1905
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• 2003

전자기력을 이용하여 탐침형 정보저장장치의 미디어를 제어할 수 있는 초정밀 구동기를 제작하였다. 탐침형 정보저장장치는 데이터 비트의 크기가 10nm 수준이고, 단일 캔틸레버가 점유하는 영역의 크기가 수십 ${\mu}m$${\times}$수십${\mu}m$ 수준이므로, 미디인 구동기는 수 nm의 위치 정확도 및 수십 ${\mu}m$ 수준의 변위 그리고 100Hz이상의 공진 주파수를 확보하여야한다. 본 연구에서 제작한 탐침형 정보저장장치의 미디어 구동기는 고저항 Si wafer 표면을 Deep RIE로 patterning한 후 그 내부를 도금으로 채워 구리 코일을 형성하고 이를 영구자석과 결합시킨 후, 구리 코일에 전류를 흘려 미디어를 구동하는 방식이다. 사용된 영구자석은 SmCo 자석이며 코일의 폭은 $100{\mu}m$이고 간격은 $20{\mu}m$, 높이는 $70{\mu}m$로 결정하였으며, 100Hz 이상의 공진 주파수를 확보하기 위하여 스프링 재질은 구리보다 상대적으로 stiff한 Si을 사용하였다. 미디어의 크기는 $20{\times}20mm^2$, 전체 구동기의 크기는 $30{\times}30mm^2$이며 측정결과 최대변위는 140mA 인가 시 약 ${\pm}127{\mu}m$이다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.48-48
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• 2018

습도는 대기중에 분포되어있는 물 분자의 양으로 사람이 살아가는데 있어 막대한 영향을 주는 환경적 요소중 하나이다. 산업적 가스의 순도에 막대한 영향을 끼치기도 하고, 반도체 산업에서 불량률과도 밀접한 관련이 있다. 또한, 식품학이나 기상학, 농사와도 밀접한 관련이 있어서 습도를 측정하는 것은 중요시 되고 있다. 이를 위해서 많은 물질들이 사용되고, 연구되었다. 산화 구리, 산화 아연, 산화 납 등의 산화금속 물질들이나 전도성 고분자, 실리콘 기반의 물질들이 주로 사용되고 있는데, 그 중 산화 금속이 쉬운 합성 방법과 낮은 단가, 명확한 작동 원리로 인해 널리 사용되고 있다. 산화 아연의 경우 넓은 direct band gap energy와 우수한 내화학성으로 인해 주로 사용되는데 그 중 1차원 물질인 nanowire의 경우 비등성 구조와 높은 비표면적을 갖는 특성으로 인해 산화 아연의 nanowire 구조가 많이 사용된다. 본 연구에서는 열처리 공정을 이용하여 산화아연의 nanowire 구조를 합성하였고, 합성된 nanowire는 양쪽의 미세전극을 직접적으로 연결하여 간편한 방식으로 소형 소자를 만들 수 있다는 장점이 있다. 열처리 공정 이전에 전기도금 방식을 이용하여 아연층을 증착 하였다. 전기도금 조건은 0.1 M의 염화 아연과 1 M의 염화 칼륨으로 구성된 용액에 -1.1 V를 인가하였다. 합성된 아연층은 열처리 공정에 의해 산화아연의 nanowire 구조체로 변환되고, SEM (scanning electron microscope)를 통해 표면 형상을 관찰 하였고, XRD (X-ray diffraction)을 통해 미세구조를 확인하였다. -1 V부터 1 V 범위의 전압을 흘려주어 형성된 소자의 전기적 특성을 확인하였고, 1 V를 인가하였을 때, 습도 변화에 따른 센서 소자의 저항변화를 통해 습도 센서로서의 특성을 확인 하였다.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.4
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• pp.23-29
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• 2000

We demonstrate the fabrication method of high-density and high-quality solder bump solving a copper (Cu) cross-contamination in Si-LSI laboratory. The Cu cross-contamination is solved by separating solder-bump process by two steps. Former is via-formation process excluding Cu/Ti under ball metallurgy (UBM) layer sputtering in Si-LSI laboratory. Latter is electroplating process including Ti-adhesion and Cu-seed layers sputtering out of Si-LSI laboratory. Thick photoresist (PR) is achieved by a multiple coating method. After TiW/Al-electrode sputtering for electroplating and via formation in Si-LSI laboratory, Cu/Ti UBM layer is sputtered on sample. The Cu-seed layer on the PR is etched during Cu-electroplating with low-electroplating rate due to a difference in resistance of UBM layer between via bottom and PR. Therefore Cu-buffer layer can be electroplated selectively at the via bottom. After etching the Ti-adhesion layer on the PR, Sn/Pb solder layer with a composition of 60/40 is electroplated using a tin-lead electroplating bath with a metal stoichiometry of 60/40 (weight percent ratio). Scanning electron microscope image shows that the fabricated solder bump is high-uniformity and high-quality as well as symmetric mushroom shape. The solder bumps with even 40/60 $\mu\textrm{m}$ in diameter/pitch do not touch during electroplating and reflow procedures. The solder-bump process of high-uniformity and high-density with the Cu cross-contamination free in Si-LSI laboratory will be effective for electronic microwave application.

• Journal of the Korean Electrochemical Society
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• v.25 no.3
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• pp.113-118
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• 2022

In this study, the effect of polyethylene glycol (PEG) on Cu electrodeposition was analyzed using cyclic voltammetry. The adsorption of PEG was affected by the specific adsorption of sulfate ion (SO₄^2-) or chloride ion (Cl^-). In SO₄^2--based plating solution, the adsorption of PEG was limited by the adsorbed SO₄^2-. Accordingly, the adsorbed PEG could suppress the electron transfer for Cu electrodeposition, but its effect was not significant. Meanwhile, in the plating solution composed of perchlorate ion (ClO₄^-) which does not specifically adsorb on Cu surface, a strong suppression effect of PEG was observed and it was proportional to the molecular weight of PEG. On the other hand, when Cl^- was specifically adsorbed on Cu surface, the suppression effect of PEG was enhanced because PEG and Cl^- formed an interrelated adsorbate. The synergetic effect of PEG and Cl^- depended on the composition of the plating solution, which means that the synergy between PEG and Cl^- is based on the physical interaction. For example, the hydrophobicity of PEG plays an important role in the interaction, as the suppression effect of PEG derivative having a hydrocarbon tail was further enhanced with the addition of Cl^-.