• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.210-213
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• 2013

실리콘 나노선 전계 효과 트랜지스터(Field Effect Transisor: FET)의 특성을 시뮬레이션을 통해 연구하였다. 일반적인 트랜스컨덕턴스(transconductance) 값을 이용하여 소자의 전계 효과 이동도(field effect mobility)를 추출했고, Y-function 방법을 이용하여 저전계 이동도(low field mobility)와 문턱전압(threshold voltage)를 구했다. 채널길이가 10nm로 매우 짧을 때와 100nm의 일반적인 길이 일 때의 전하 이동도 특성을 비교하여 Si 나노선 FET의 쇼트 채널 효과(short channel effect)를 보았다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.190-190
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• 2003

현재 a-Si TFT는 평판 디스플레이 소자로서 주로 사용되고 있으나 점차 고속응답속도 특성, 고화질이 요구됨에 따라 높은 전계효과 이동도를 가진 poly-Si TFT로 대체하기 위한 연구가 진행되고 있으며 특히 poly-Si TFT를 상용 유리 기판에 적용하기 위해 비정질 실리콘의 저온 결정화에 대한 연구가 활발히 진행 되고 있다. 본 연구에서는 극박막의 Ni을 선택적으로 증착하여 전계 유도방향성 결정화 (Field Aided Lateral Crystallization : FALC) 공정을 이용하여 결정화를 진행하였으며 전계를 인가하지 않은 경우와 전계를 인가한 경우, 전계 세기에 따른 결정화에 대하여 비교하였다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.10a
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• pp.243-244
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• 2017

This paper introduces about the difference between the tunneling currents in the 1D and 2D directions for the calculation of the band-to-band tunneling currents of the tunneling field effect transistors. In the two-dimensional tunneling, diagonal tunneling is not calculated in the one-dimensional tunneling so that more accurate tunneling current can be calculated. Simulation results show that the tunneling in the two - dimensional direction has no effect on the voltage above the threshold voltage, but it affects the subthreshold swing below the threshold voltage.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.235-235
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• 2012

Reduced graphene oxide (rGO) 물질을 사용하여 전계효과 트랜지스터를 제작하였고 이의 광전기적 특성을 펄스 레이저와 진공 저온 측정을 통하여 분석하였다. 이를 통하여 rGO 소자의 광소자로써의 이용 가능성에 대하여 고찰하였다.

• Journal of the Korean Magnetics Society
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• v.21 no.5
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• pp.163-166
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• 2011

We describe modified Fowler-Nordheim (FN) field emission equation for the free-standing nanomembrane cathode, which has mechanical degrees of freedom. The derived FN equation agrees well with the experimental data. The free-standing nanomambrane cathode demonstrates its unique ability to detect large biomolecure ions.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.05a
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• pp.450-452
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• 2016

The effect of channel doping on L-shaped Tunneling Field-Effect Transistors (TFETs) have been investigated by 2D TCAD simulation. When the source doping is over $10^{20}cm^{-3}$, the subthreshold swing (SS) is abruptly decreased, and when drain doping concentration is below $10^{18}cm^{-3}$, the leakage current in the negative voltage is reduced.

• Journal of the Korean Applied Science and Technology
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• v.30 no.4
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• pp.586-591
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• 2013

This paper describes the characteristics of thermo-field emission in a freestanding silicon nanomembrane under ion bombardment with various thermal and field conditions. The thermal effect and field effect in thermo-field emission in silicon nanomembrane are investigated by varying kinetic energy of ions and electric field applied to the silicon nanomembrane surface, respectively. We found that thermo-field emission increases linearly as the electric field increases, when the electric field intensity is lower than the threshold. The thermo-field emission (schottky effect) increases proportionally to the power of temperature, which agree well with the predictions of a thermo-field emission model.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.12
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• pp.2741-2746
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• 2012

In this study, we propose a novel structure based on AlGaN substrate or buffer layer to implement a normally-off mode transistor that was difficult to be realized by conventional AlGaN/GaN heterojunction structures. The channel under the gate can be selectively depleted by growing an upper AlGaN barrier with a higher Al mole fraction and a top GaN charge elimination layer on AlGaN substrate or buffer layer. The proposed AlGaN heterojunction field effect transistor can achieve a threshold voltage of > 2 V, which is generally required in power device specification.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.59-63
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• 2005

A simulation method combined with the simulation program with integrated circuit emphasis (SPICE) and the technology computer-aided design (TCAD) has been proposed to estimate the electrical characteristics of the metal-ferroelectric-semiconductor field effect transistor (MFS/MFISFET). The complex behavior of the ferroelectric property was analyzed and surface potential of the channel region in the MFS gate structure was calculated with the numerical TCAD method. Since the calculated surface potential is equivalent with the surface potential obtained with the SPICE model of the conventional MOSFET, we can obtain the current-voltage characteristics of MFS/MFISFET corresponding to the applied gate bias. Therefore, the proposed method will be very useful for the design of the integrated circuits with MFS/MFISFET memory cell devices.

• Journal of IKEEE
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• v.22 no.2
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• pp.499-505
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• 2018

Since feedback field-effect transistors (FBFETs) have ideal switching characteristics resulting from feedback phenomenon caused by electrons and holes in the channel region, the researches about FBFET devices have been proposed and demonstrated worldwide recently. The device operated with novel principle can operate as a switching electronic device. Besides, because the hysteresis characteristics of the device by accumulated electrons and holes in channel region can be also utilized for memory applications, its application range is wide. In this paper, we cover various device structures of FBFET proposed until now and their operation mechanism, and then look into their applicable fields.