• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.2
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• pp.207-217
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• 1999

When the feed of an offset reflector antenna is displaced from the focal point, the phase distortion results in the aperture field distribution, which in turn gives rise to a deviation of maximum beam, a decrease in gain, and an increase in sidelobes. In order to study these scan characteristics, an offset reflector antenna with the defocused feed is analyzed by a series expansion method using the Zernike polynomials, which can be used to calculate radiation pattern fast and exactly. And from the analyzed results, scan loss data in terms of reflector geometry are presented. And also, the BDF (beam deviation factor) expression is derived with offset reflector configuration analytically, and calculated results and simple formula of BDF are presented for determining beam deviation characteristics.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.9
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• pp.15-22
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• 2000

The effects of carrier transport and input power on the extinction ratio was theoretically analyzed in a 1.55${\mu}m$ InGaAsP/InGaAsP multiple-quantum-well(MQW) electroabsorption(EA) modulator. Poisson's equation, current continuity equations for electrons and holes, and optical field distribution were self-consistently solved by considering electric field dependent absorption coefficients. The field screening effect due to the carrier accumulation in heterointerface and the space-charge region occurred more seriously at the input side of modulator as input optical intensity increased. It was revealed that extinction ratio could be steeply degraded for modulator with the length of 200${\mu}m$ when an input power exceeds 10mW. A degradation of extinction ratio due to the field screening effect would be more significantly at high-performance devices such as a 1.55${\mu}m$DFB-LD/EA-modulator integrated source where optical coupling efficiency is almost complete or a very high-speed modulator with its length as short as a few tens ${\mu}m$.

• Journal of the Korean Institute of Telematics and Electronics
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• v.4 no.4
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• pp.2-12
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• 1967

A pair of insulated-gate metal-oxide-semiconductor field-effect transistor has been used to measure the direct current produced from the ionization chamber in the range of to A. An analisis of direct-current differential amplifier giving the expressions of the common-mode rejection ratio and the rralization of the constant-current generator to give very large effective source resistance has been presented. Voltage gain is 6.6, drift at the room temperature is 1.5mv per day. The common-mode rejection ratio is obtained maximum 84db. These facts give the feasibility of small direct-current measurements by utilizing this type transistors.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.5
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• pp.270-277
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• 2000

A new Lateral Trench-MOS Bipolar-Mode Field-Effect Transistor(LTMBMFET) is proposed and verified by MEDICI simulation. By using a trench MOS structure, the proposed device can enhance the current gain without sacrificing other device characteristics such as the breakdown voltage. The channel region of the proposed device is formed between the trench MOS structure. So the effect of the substrate voltage is negligible when compared with the conventional device which has a channel region between the gate junction and the buried oxide layer.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.7
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• pp.1168-1175
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• 2000

To observe propagation characteristics of microstrip lines on YIG film, the FDTD is employed. For various GGG substrate and YIG film, the dispersion curves and the bandwidth of the cutoff region are calculated. And the distribution of the electric fields of the transverse plane underneath the conductor strip is obtained near upper and lower cutoff frequency. The results of two and three dimensional FDTD for the upper cutoff frequency are compared with spectral domain approach(SDA). A good agreement is verified, although there is relative error 6% between the results calculated by the two methods.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1009-1010
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• 2011

마이크로 스케일의 유체를 dispensing 하기 위한 방법으로 electrowetting 현상을 이용한다. 작은 물방울은 높은 표면에너지에 의해 좁은 관 내부에서 떨어지지 않고 정적인 평형상태를 이루게 된다. 이때, 유체 내부에 가느다란 전극을 삽입하고, 외부에 금속 평판을 설치한 후 두 전극 사이에 일정한 전압을 인가할 경우 sharp edge의 형태를 지니는 전극의 끝단에서 매우 높은 전계의 변화가 발생한다. 이 때, 작은 물방울의 electrowetting 현상에 의한 내부의 압력 변화를 수치 해석적으로 예측하고 이로 인한 형상의 변화 및 물방울의 dispensing 현상을 실험적으로 관찰한다.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.66 no.3
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• pp.139-143
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• 2017

In this paper, we propose a separation method of the dielectric particles in the liquid flow. Since particles are dielectric in most cases, they experience dielectrophoretic(DEP) force under non-uniform electric field. The field characteristics in the electromagnetic and fluid dynamic systems are solved by using the finite element method. The motional equation of the particles is calculated by the Runge-Kutta method. The field analysis shows the feasibility of the proposed method. The particle separation model with large DEP force exerting on particles is designed by analyzing field characteristics.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.12
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• pp.171-176
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• 2010

This paper presents the electric field for 22.9[kV]/380[V], 2[MVA] mold transformer are analysed using FEM(finite element method). The electric field was calculated for the voltage applied to the transformer. Then, it is analysed that the maximum electric field occurred between high voltage turns. Capacitance is calculated with energy method. Surge impulse test simulation is studied by modeling circuit with capacitance and inductance. This paper obtain the result that is about influence of electric field in distribution mold transformer adopted.

• Proceedings of the KIEE Conference
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• 2008.05a
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• pp.143-144
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• 2008

this paper describes the electric field distribution interpretation along a shield form inner vacuum interrupter(VI). The equipotential line and electric field in a VI are analysed by a finite element method at various shield form. in result, The electric potentials of end shield form was increased or decreased because it was various the length of shield and between external insulation and source area or fix._end shield. finally shield is how to electric field affect, and advance, and will achieve the optimum design of VI inside shield.

• Proceedings of the KIPE Conference
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• 2008.06a
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• pp.177-179
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• 2008

최근 전원부의 소형화 경향에 따라 에너지 변환 소자인 변압기의 소형 경량화 요구가 가속화 되고 있다. 전원부의 고효율 소형화를 위해서 평면 변압기가 대두되고 있다. 이에 따라 본 논문에서는 8[W]급 플라이-백(Flyback) 평면 변압기의 PCB(Printed Circuit Board) 패턴을 FERROXCUBE 사의 평면 변압기 설계 방법을 따라 개념 설계를 하였다. 120[kHz]의 스위칭 주파수에서 동작하는 평면 변압기의 자계 분포(magnetic intensity), 와전류(eddy current), 전계 분포(electric intensity)를 유한 요소법(Finite Element Method)을 이용하여 분석하였다.