• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.156-156
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• 2011

InAs와 InGaAs 양자점(Quantum Dot: QD)을 이용한 광대역 초발광 다이오드(Superluminescent Diode: SLD) 시료가 분자선증착법(Molecular Beam Epitaxy)을 이용하여 성장되었다. 광대역 파장대 출력을 얻기 위해 각기 다른 종류의 양자점과 다른 크기의 양자점을 적층하였다. 시료는 광발광(Photoluminescence: PL) 측정과 전계발광(Electroluminescence: EL) 측정을 통해 분석 되었으며, PL 측정결과 1222 nm와 1321 nm 파장에서 최대치(peak)를 나타냈으며 EL 측정결과 900mA 전류 주입시 131 nm의 반치폭(Full Width at Half Maximum: FWHM)을 얻었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.6
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• pp.282-287
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• 2023

The effect of stress relief heat treatment temperature and duration time on the microstructure, residual stress and Vickers hardness of additively manufactured Ti-6Al-4V alloy using laser powder bed fusion process was clarified. As a result of stress relief heat treatment for 240 minutes at 823 K and 60 minutes or more at 873 K, residual stress was decreased less than 30 MPa without grain growth and phase transformation which causes dimensional distortion and deterioration of mechanical properties. In addition, hardness was increased with increasing heat treatment temperature and duration time. It was deduced that the refinement of acicular martensitic α' phase due to the increasing duration time of isothermal heat treatment at 773~873 K, which was not detected by XRD and phase map analysis using SEM-EBSD, probably increases the hardness.

• The Journal of Korean Academy of Prosthodontics
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• v.57 no.4
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• pp.483-489
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• 2019

With development of digital dentistry, the 3-dimensional (3D) manufacturing industry using computer-aided design and computer-aided manufacturing (CAD/CAM) has grown dramatically in recent years. Denture fabrication using digital method is also increasing due to the recent development of digital technology in dentistry. The 3D manufacturing process can be categorized into 2 types: subtractive manufacturing (SM) and additive manufacturing (AM). SM, such as milling is based on cutting away from a solid block of materal. AM, such as 3D printing, is based on adding the material layer by layer. AM enables the fabrication of complex structures that are difficult to mill. In this case, additive manufacturing method was applied to the fabrication of the resin-based complete denture to a 80 year-old patient. During the follow-up periods, the denture using digital method has provided satisfactory results esthetically and functionally.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.269-269
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• 2002

ZnTe/ZnMnTe single quantum well of high quality was grown by hot-wall epitaxy, in which ZnMnTe layer was used as a barrier. It was found that ZnTe well layer was under severe strain. Very sharp luminescent peaks of the heavy-hole exciton (el-hhl) and the light-hole exciton (el-lhl) were observed from the photoluminescence (PL) measurement. As the well layer thickness increases, the peaks associated with excitons of (el-hhl) and (el-lhl) were shifted toward the lower energy side. The temperature dependence of the PL peak intensity was well explained by the thermal activation theory.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.267-271
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• 2002

ZnTe/ZnMnTe single quantum well of high quality was grown by hot-wall epitaxy, in which ZnMnTe layer was used as a barrier. It was found that ZnTe well layer was under severe strain. Very sharp luminescent peaks of the heavy-hole exciton (el-hhl) and the light-hole exciton (el-lhl) were observed from the photoluminescence (PL) measurement. As the well layer thickness increases, the peaks associated with excitons of (el-hhl) and (el-lhl) were shifted toward the lower energy side. The temperature dependence of the PL peak intensity was well explained by the thermal activation theory.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.42 no.11
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• pp.927-936
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• 2014

This paper presents development and verification of the progressive failure analysis upon the composite laminates. Strength and stiffness of the fiber-reinforced composite are analyzed by property degradation approach with emphasis on the material nonlinearity and continuum damage mechanics (CDM). Longitudinal and transverse tensile modes derived from Hashin's failure criterion are used to predict the thresholds for damage initiation and growth. The modified Newton-Raphson iterative procedure is implemented for determining nonlinear elastic and viscoelastic constitutive relations. Laminar properties of the composite are obtained by experiments. Prediction on the un-notched tensile (UNT) specimen is performed under the laminate level. Stress-strain curves and strength results are compared with the experimental measurement. It is concluded that the present nonlinear CDM approach is capable of predicting the strength and stiffness more accurately than the corresponding linear CDM one does.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.239-239
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• 2011

최근에 감지막의 pH 감지특성을 평가하기 위해 electrolyte insulator semiconductor (EIS) 구조가 유용하게 이용되고 있다. EIS는 CMOS공정과 호환이 가능하고 구조가 간단하며 pH 변화에 반응속도가 빠르다는 장점을 가지고 있다. EIS 구조를 갖는 pH 센서의 동작 메커니즘은 pH 용액의 수소이온이 감지막의 표면에서 표면전위를 변화시키는 것에 기인한다. pH 감지막으로는 높은 유전율과 안정성이 뛰어난 high-k 물질이 많이 연구되고 있다. 그 중 high-k 물질인 ZrO2은 낮은 열전도도, 산성에서 알칼리성 영역까지의 넓은 화학안정성을 가지며 낮은 열 팽창성, 높은 유전상수 등 우수한 특성을 가지고 있다. 본 실험은 SiO2/ZrO2를 적층한 EIS 소자를 제작하여 열처리에 따른 전기적 특성과 pH 감지 특성을 평가해 보았다. EIS 적층막으로 사용된 SiO2는 실리콘과 high-k 감지막 사이의 계면상태를 양호하게 유지시키기 위한 완충막으로 성장되었다. 후속열처리는 rapid thermal annealing (RTA) 시스템을 이용하여 750$^{\circ}C$, 850$^{\circ}C$, 950$^{\circ}C$로 H2/N2 분위기에서 30초 동안 실시하였다. RTA 열처리 온도가 증가할수록 높은 pH 감지특성이 보였으며 hysteresis 현상과 drift 효과와 같은 non ideal 효과에 강한 immunity가 있는 것을 확인하였다. 결론적으로 SiO2/ZrO2 적층구조를 갖는 EIS는 RTA 950$^{\circ}C$ 열처리를 실시하였을 때 우수한 EIS pH 센서를 제작할 수 있을 것으로 기대된다.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.64-72
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• 2023

In this study, after transferring graphene on a Cu substrate and printing a Sn-3.0Ag-0.5Cu Pb-free solder paste on the Cu substrate, effects of the transferred graphene on formations and growths of intermetallic compound (IMC) at the interface between the Cu substrate and the solder were reported during processes of reflow soldering and isothermal aging for 1000 h with various temperatures (125, 150, and 175 ℃). Thicknesses of Cu₆Sn₅ and Cu₃Sn IMCs at the interfaces with graphene were decreased during the reflow soldering and isothermal aging processes compared to those without graphene. The transferred graphene layers also showed that the growth rate constant and square of growth rate constant which related to the growth mechanisms of Cu₆Sn₅ and Cu₃Sn IMCs with t he t emperature a nd t ime of t he i sothermal aging c ould dramatically decreased.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.2
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• pp.63-68
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• 2007

A number of process problems should be solved in the multi-layered ceramic devices such as EMI filter. In particular, it is essential to control the sintering shrinkage in co-firing of different materials for obtaining defect-free samples such as crack, camber, and delamination which usually occur near the surface and interface. We studied the effect of the powder properties of ferrite on the co-firing behavior of green ceramic layers composed of ferrite and varistor. Three kind of ferrite powder samples as a function of milling time (24, 48, and 72 hr) were prepared. Varistor and ferrite ceramic green sheet were made by means of doctor blade process using slurry (ceramic powder and binder solution). Here, slurry was prepared by mixing 55 wt% powder with 45wt% binder solution. Varistor and ferrite green sheets were laminated at $80 kg/cm^2$, and co-fired at $900^{\circ}C$ and $1000^{\circ}C$ for 3 hr. We obtained the camber-free and co-fired ferrite/varistor layer structure by controlling the milling time and sintering temperature.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.81-88
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• 2006

Laterally self-aligned InGaAs/GaAs quantum-dots (QDs) have been fabricated by using a multilayer stacking technique. For the growth optimization, we vary the number of stacks and the growth temperature in the ranges of 1-15 periods and $500-540^{\circ}C$. respectively, Atomic force microscope (AFM) images and photoluminescence (PL) spectra reveal that the lateral alignment of QDs is enhanced in extended length by an increased stack period, but severely degrades into film-like wires above a critical growth temperature. The morphological and the photoluminescence characteristics of laterally self-aligned InGaAs QDs have been analyzed through mutual comparisons among four samples with different parameters. An anisotropic arrangement develops with increasing number of stacks, and high-temperature capping allows isolated QDs to be spontaneously organized into a one-dimensionally aligned chain-like shape over a few ${\mu}m$, Moreover, the migration time allowed by growth interruption plays an additional important role in the chain arrangement of QDs. The QD chains capped at high temperature exhibit blue shifts in the emission energy, which may be attributed to a slight outdiffusion of In from the InGaAs QDs.