• Proceedings of the Materials Research Society of Korea Conference
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• 2007.05a
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• pp.12.1-12.1
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• 2007

• Proceedings of the KWS Conference
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• 2003.05a
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• pp.37-39
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• 2003

• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.1-10
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• 2022

Recently, semiconductor devices have been used in many fields owing to various applications of mobile electronics, wearable and flexible devices and substrates. During the semiconductor chip bonding process, the mismatch of coefficient of therm al expansion (CTE) between the substrate and the solder, and the excessive heat applied to the entire substrate and components affect the performance and reliability of the device. These problems can cause warpage and deterioration of long-term reliability of the electronic packages. In order to improve these issues, many studies on low-melting temperature solders, which is capable of performing a low-temperature process, have been actively conducted. Among the various low-melting temperature solders, such as Sn-Bi and Sn-In, Sn-58Bi solder is attracting attention as a promising low-temperature solder because of its advantages such as high yield strength, moderate mechanical property, and low cost. However, due to the high brittleness of Bi, improvement of the Sn-Bi solder is needed. In this review paper, recent research trends to improve the mechanical properties of Sn-Bi solder by adding trace elements or particles were introduced and compared.

• Polymer(Korea)
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• v.34 no.1
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• pp.52-57
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• 2010

The low viscous epoxy resin(bisphenol F) with carboxylic acid as the reductants was introduced for high performance and reliability in the ACA with a low melting point alloy filler system. The curing characteristics of the epoxy resin and temperature dependant viscosity characteristic of epoxy resin at the melting temperature of LMPA were investigated by dynamic mode of differential scanning calorimetry (DSC) and rheometer, respectively. Based on these thermo-rheological characteristics of epoxy resin and LMPA, the optimum process system was designed. In order to remove the oxide layer on the surface of LMPA particle, three different types of carboxyl acid-based reductant were added to the epoxy resin. The wetting angles were about $18^{\circ}$ for carboxypropyldisilioxane, and $20.3^{\circ}$ for the carboxy-2-methylethylsiloxane, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.1
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• pp.21-28
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• 2004

We have demonstrated the applicability of dry film photoresist (DFR) in photolithography process for fine pitch solder bumping on the polytetrafluoroethylene (PTFE/Teflon ) printed circuit board (PCB). The copper lines were formed with 100$\mu\textrm{m}$ width and 18$\mu\textrm{m}$ thickness on the PTFE test board, and varying the gaps between two copper lines in a range of 100-200$\mu\textrm{m}$. The DFRs of 15$\mu\textrm{m}$ thickness were laminated by hot roll laminator, by varying laminating temperature from $100{\circ}C$ to 15$0^{\circ}C$ and laminating speed from 0.28-0.98cm/s. We have found the optimum process of DFR lamination on PTFE PCB and accomplished the formation of indium solder bumps. The optimum lamination condition was temperature of $150^{\circ}C$ and speed of about 0.63cm/s. And the smallest size of indium solder bump was diameter of 50$\mu\textrm{m}$ with pitch of 100$\mu\textrm{m}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.2
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• pp.186-190
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• 2023

We studied the various characteristics of Sn-In (wt%) Pb-free solders for photovoltaic ribbon application. The solders near the eutectic composition of Sn₄₈In₅₂ (wt%) existed in InSn₄ and In₃Sn alloy phases, and in In crystal phase, but not in Sn crystal phase. In addition, the InSn₄ phase (γ-alloy) existed separately from the In₃Sn (β-alloy) and the In phase confirmed by an SEM-EDS-mapping. The melting temperature of the eutectic solder of Sn₄₈In₅₂ (wt%) was 119.2℃, and when the Sn content decreased in reference to the eutectic composition, it slightly increased to 121.4℃, but when the Sn content increased, it remained almost constant at 119.1℃. The peel strength of the ribbon plated with the Sn₄₂In₅₈ (wt%) solder was 38.7 N/mm², and it tended to increase when the Sn content increased. The peel strength of the eutectic Sn₄₈In₅₂ (wt%) solder was 53.6 N/mm², and that of the Sn₅₁In₄₉ (wt%) solder was 61.6 N/mm² that was the highest.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.74-78
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• 2024

We have studied the effects of Ag on the characteristics of Sn₄₈In₅₂Ag_x (wt%) low-melting solders for photovoltaic ribbons. The Sn₄₈In₅₂ (wt%) solder coexisted in the InSn₄ and In₃Sn alloys. Ag atoms added in the solder formed an AgIn₂ alloy by reacting with some part of In atoms, while they did not react with Sn atoms. The addition of Ag atoms in the Sn₄₈In₅₂Ag_x (wt%) solders showed useful results; an increase in peel strength and a decrease in melting temperature. The peel strength of the ribbon plated with the Sn₄₈In₅₂ (wt%) solder was 53.6 N/mm², and that of the Sn₄₈In₅₂Ag₁ (wt%) solder largely increased to 125.1 N/mm². In the meanwhile, the melting temperature of the Sn₄₈In₅₂ (wt%) solder was 119.2℃, and that of the Sn₄₈In₅₂Ag₁ (wt%) solder decreased to 114.0℃.