• Korean Journal of Materials Research
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• v.14 no.4
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• pp.235-238
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• 2004

The LT-MBE (low temperature molecular beam epitaxy) allows to dope GaAs with Mn over its solubility limit. A 75 urn thick GaMnAs layers are grown on a low temperature grown LT-GaAs buffer layer at a substrate temperature of $260^{\circ}C$ by varying Mn contents ranged from 0.03 to 0.05. The typical growth rate for GaMnAs layer is fixed at 0.97 $\mu\textrm{m}$/h and the V/III ratio is varied from 25 to 34. The electrical and magnetic properties are investigated by Hall effect and superconducting quantum interference device(SQUID) measurements, respectively. Double crystal X-ray diffraction(DCXRD) is also performed to investigate the crystallinity of GaMnAs layers. The $T_{c}$ of the $Ga_{l-x}$ /$Mn_{x}$ As films grown by LT-MBE are enhanced from 38 K to 65 K as x increases from 0.03 into 0.05 whereas the $T_{c}$ becomes lower to 45 K when the V/III ratio increases up to 34 at the same composition of x=0.05. This means that the ferromagnetic exchange coupling between Mn-ion and a hole is affected by the growth condition of the enhanced V/III ratio in which the excess-As and As-antisite defects may be easily incorporated into GaMnAs layer.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.484-492
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• 1998

The formation mechanism of the epitaxial cobalt silicide from Co/Ti/OOO) Si structure has been investigated. The transition temperature of CoSi to CoSi, was found to increase with increasing the Ti interlayer thickness, which may be owing to the occupation of the tetrahedral sites by Ti atoms in the CoSi crystal structure as well as the blocking effect of the Ti interlayer on the diffusion of Co. Also, the Co- Ti-O ternary compound formed at the metal! Si interface at the begining of silicidation, which seems to play an important role in epitaxial growth of Co silicide. The final layer structures obtained after a rapid thermal annealing of the Cot Ti/( 100) Si bi-layer structure turned out to be Ti oxide/Co- Ti-Si/epi-$CoSi_2$/OOO)

• Proceedings of the Plant Resources Society of Korea Conference
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• 2010.10a
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• pp.23-23
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• 2010

전북 서해안 새만금 지역에 조성되는 간척지 면적 28,300ha의 30%인 8,400ha 정도가 농업용지로 사용되는 계획이 확정됨에 따라 해당 용지를 효율적으로 사용 할 수 있는 다양한 활용 방안이 요구되고 있다. 대단위 농업지구가 들어설 예정지인 새만금 광활 간척지는 네덜란드와 유사하게 토양의 대부분이 미사질 양토로 이루어져있어 적용 가능한 화훼류를 적절히 선발하고 적합한 재배기술을 도입한다면 대규모 화훼제배 단지로서의 성장 가능성이 충분할 것으로 판단된다. 따라서 전북 농업기술원에서는 2004년부터 7년에 걸쳐 새만금 간척지의 농업적 활용도 제고와 경관농업 육성을 통한 관광자원화 가능성을 확인하기 위하여 72종의 원예작물 적응시험을 실시하였으며 22종의 자생식물과 튤립, 아이리스, 수선화, 히아신스, 참나리 등 5종의 구근 화훼류를 적합 화훼류로 선발하였다. '08~09년에는 내염성과 저온 및 풍해 저항성이 있는 아펠톤, 골든아펠톤, 네그리타, 프랑소와즈, 키스네리스 등을 간척지적용 가능 주요 튤립 품종으로 선발 하였는데 선발된 품종들을 대상으로 높은 염농도 하에서의 체내축적 무기성분을 조사한 결과, K와 Mg은 증가되는 경향이었으나 Ca은 감소되었으며, Cl이온은 현저하게 증가하였다. 또한 튤립체내의 산도 및 전기전도도와 항산화효소의 활성이 증가하였는데 스트레스 반응결과 유해산소가 체내에 축적되고, 이를 중화시키기 위하여 수소이온을 소모함으로써 체내의 산도는 상승된 것으로 추정되며 염분함량이 높을수록 삼투압에 의하여 뿌리에서 흡수는 양분이 적은 반면 잎 줄기의 증산작용은 동일하기 때문에 상대적으로 체내의 농도가 높아져 전기전도도가 상승된 것으로 판단된다. 식물 스트레스의 지표물질로 사용되고 있는 proline 함량도 토양내의 염도가 상승되면서 증가되었으며 엽록소 함량은 감소되는 경향을 보였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.345-345
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• 2008

최근 전자 소자의 고주파화, 소형화에 대한 요구가 증대 되면서 많은 소자들을 하나의 시스템에 3차원적으로 실장시키는 SOP (System-on-Package)가 새로운 대안으로 떠오르고 있으며 SOP를 실현하기 위해서는 집적기판에 대한 저온화 공정 기술이 절실히 필요한 실정이다. 현재 집적기판에 사용되는 재료로서 세라믹이 널리 알려져 있지만 세라믹은 취성이 있으며 $1000^{\circ}C$ 이상의 고온화 공정 프로세스를 필요로 하는 근본적인 약점이 있다. 이에 본 연구에서는 상온에서 고속으로 치밀한 성막을 가능케 하는 Aerosol Deposition Method (ADM)를 이용하여 최초로 세라믹-폴리머 복합체 후막을 성공적으로 제작하였다. XRD와 FT-IR 분석 결과 $Al_2O_3$-PMMA, $Al_2O_3$-PI 혼합물을 출발 파우더로 사용하여 제조한 후막이 세라믹-폴리머 복합체임을 확인할 수 있었다. 또한 SEM 분석결과 $Al_2O_3$-PMMA 복합체와 $Al_2O_3$-PI 복합체의 표면 양상이 매우 다르다는 점을 확인하였으며 $Al_2O_3$-PMMA 복합체의 성막률이 $Al_2O_3$-PI 복합체의 성막률에 비해 매우 낮음을 확인하였다. 이러한 현상들은 폴리머 파우더들의 경도와 탄성 차이 때문인 것으로 사료되어 이를 증명하기 위한 실험을 실시하였다. 결국 PMMA 막과 PI 막에 대한경도측정결과와 PMMA 파우더와 PI 파우더의 유성 볼밀링 전후에 대한 SEM 이미지를 통해 PMMA 파우더가 PI 파우더에 비해 경도가 낮으며 반면 탄성이 높다는 것을 간접적으로 확인할 수 있었다. 이와 같은 분석을 통하여 ADM을 이용한 세라믹-폴리머 복합체 후막의 제조에 있어 폴리머 파우더의 경도와 탄성이 매우 큰 영향을 미친다는 것을 알 수 있었다. 본 연구에서는 세라믹-폴리머 복합체 후막을 성공적으로 제조하기 위해서 폴리머 파우더의 적절한 선택이 중요함을 알 수 있었으며 ADM을 이용한 세라믹-폴리머 복합체 후막의 제조에 대한 가이드 라인을 제시할 수 있을 것으로 기대된다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.816-820
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• 2013

We investigated the characteristics of the silicon oxy-nitride and nitride films grown by plasma-enhanced chemical vapor deposition (PECVD) at the low temperature with a varying $NH_3/N_2O$ mixing ratio and a fixed $SiH_4$ flow rate. The deposition temperature was held at $150^{\circ}C$ which was the temperature compatible with the plastic substrate. The composition and bonding structure of the nitride films were investigated using Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). Nitrogen richness was confirmed with increasing optical band gap and increasing dielectric constant with the higher $NH_3$ fraction. The leakage current density of the nitride films with a high NH3 fraction decreased from $8{\times}10^{-9}$ to $9{\times}10^{-11}(A/cm^2$ at 1.5 MV/cm). This results showed that the films had improved electrical properties and could be acceptable as a gate insulator for thin film transistors by deposited with variable $NH_3/N_2O$ mixing ratio.

• Journal of the Korean Magnetics Society
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• v.22 no.5
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• pp.162-166
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• 2012

V-I characteristics of Fe(100)/MgO(100)/Cu-phthalocyanine (CuPc)/Co hybrid magnetic tunnel junctions were investigated at different temperatures. Fe(100) and Co ferromagnetic layers were separated by an organic-inorganic hybrid barrier consisting of different thickness of CuPc thin film grown on a 2 nm thick epitaxial MgO(100) layer. As the CuPc thickness increases from 0 to 10 nm, a bistable switching behavior due to strong charging effects was observed, while a very large magenetoresistance was shown at 77 K for the junctions without the CuPc barrier. This switching behavior decreases with the increase in temperature, and finally disappears beyond 240 K. In this work, high-potential future applications of the MgO(100)/CuPc bilayer were discussed for hybrid spintronic devices as well as polymer random access memories (PoRAMs).

• Korean Journal of Food Science and Technology
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• v.35 no.4
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• pp.684-689
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• 2003

In previous paper, we isolated the bacteria, Bacillus subtilis JM-3, with proteolytic and fibrinolytic activity for candidate microorganisms that have rapid fermenting and physiological functions from anchovy sauce. This study was carried out to search physiological functions of Bacillus subtilis JM-3, such as antimicrobial, antioxidative, antimutagenic, angiotensin-converting enzyme inhibition, and anticarcinogenic activity in vitro. The cell free culture of Bacillus subtilis JM-3 showed strong antibacterial activity against Listeria monocytogenes, antioxidative activity with 87% of inhibition rate against linoleic acid, 50% of antimutagenic activity against N-nitrosodimethylamine and N-nitrosomorpholine, and 88.9% of growth inhibition rate against SNU-1 cell line (stomach cancer cell of human). However, Bacillus subtilis JM-3 did not show angiotensin-converting enzyme inhibition activity.

• Korean Journal of Materials Research
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• v.12 no.9
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• pp.724-728
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• 2002

Inductively-coupled $N_2$O plasma was utilized to grow silicon dioxide at low temperature and applied to fabricate polycrystalline-silicon thin film transistors. At $400^{\circ}C$, the thickness of oxide was limited to 5nm and the oxide contained Si≡N and ≡Si-N-Si≡ bonds. The nitrogen incorporation improved breakdown field to 10MV/cm and reduced the interface charge density to $1.52$\times$10^{11}$ $cm^2$ with negative charge. The $N_2$O plasma gate oxide enhanced the field effect mobility of polycrystalline thin film transistor, compared to $O_2$ plasma gate oxide, due to the reduced interface charge at the $Si/SiO_2$ interface and also due to the reduced trap density at Si grain boundaries by nitrogen passivation.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.2
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• pp.352-356
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• 2011

Transparent conducting oxide films like ITO/Au/ITO and AZO/Au/AZO were fabricated with a sputter at a low-temperature of less then $70^{\circ}C$ and their crystallization and opto-electrical properties were studied. X-ray diffractiometry showed that single-ITO layer was amorphous, whereas, ITO of ITO/Au/ITO multi-layer was crystal. The ITO crystallization and its orientation depended on Au crystallization. Surface roughness of the ITO-multi-layers were in the range of 29-88% of that of ITO-single layer. ITO on amorphous gold layer had more rough surface than ITO on crystal gold. The gold layer between ITO improved electrical conductivity. Carrier density, mobility, resistivity and sheet resistance of ITO-single layer were $2.3{\times}10^{19}/cm^3$, $85{\times}cm^2$/Vs, $31{\times}10^{-4}{\Omega}cm$, and $310{\times}{\Omega}/cm^2$, respectively. Those of ITO/Au/ITO-multi-layers depended on Au-interlayer-thickness, which were in the range of $3.6{\times}10^{19}{\sim}4.2{\times}10^{21}/cm^3$, $43{\sim}85cm^2$/Vs, $0.17{\times}10^{-4}{\sim}25{\times}10^{-4}{\Omega}cm$, and $1.7{\sim}20{\times}{\Omega}/cm^2$, respectively. The sheet resistances of the single-layer ITO and the multi-layer ITO were 310 and $2.7{\sim}21{\Omega}/cm^2$, respectively. That of AZO/Au/AZO was $8.6{\Omega}/cm^2$, which was better than the single-layer ITO.

• Current Photovoltaic Research
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• v.3 no.1
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• pp.21-26
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• 2015

High efficiency $Cu(In,Ga)Se_2$ solar cells are generally prepared above $500^{\circ}C$. Lowering the process temperature can allow wider selection of substrate material and process window. In this paper, the three-stage co-evaporation process widely used to grow CIGS thin film at high temperature was modified to reduce the maximum substrate temperature. Below $400^{\circ}C$ the CIGS films show poor crystal growth and lower solar cell performance, in spite of external Na doping by NaF. As a new approach, Cu source instead of Cu with Se in the second stage was applied on the $(In,Ga)_2Se_3$ precursor at $400^{\circ}C$ and achieved a better crystal growth. The distribution of Ga in the films produce by new method were investigated and solar cells were fabricated using these films.