• Proceedings of the Korean Magnestics Society Conference
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• 1997.11a
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• pp.110-111
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• 1997

• Proceedings of the Korean Magnestics Society Conference
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• 2011.12a
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• pp.192-193
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• 2011

• Proceedings of the Korean Magnestics Society Conference
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• 2012.05a
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• pp.47-48
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• 2012

• Proceedings of the Korean Magnestics Society Conference
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• 1999.04a
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• pp.38-39
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• 1999

• Proceedings of the Korean Magnestics Society Conference
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• 2012.05a
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• pp.105-106
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• 2012

• Journal of the Korean Magnetics Society
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• v.18 no.4
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• pp.147-153
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• 2008

It has been well-known that the Fe/GaAs heterostructure has a small lattice mismatch of 1.4% between Fe and GaAs, and the Fe layer is grown epitaxially on the the GaAs substrate. There are rich physics are observed in the GaAs/Fe interface, and the spininjection is actively studied due to its potential applications for spintronics devices. We fabricated Fe wedge layer in the thickness range $0{\sim}3.4$ nm on the GaAs(100) surface with 5-nm thick Au capping layer. The magnetic anisotropy of the Fe/GaAs system was investigated by employing Brillouin light scattering(BLS) measurements in this study. The spin wave excitation of Fe layer was studied as the function of intensity and the in-plane angle of external magnetic field, and thickness of Fe layer. Also these various dependences were analyzed with analytic expression of spin wave surface mode in order to determine the magnetic anisotropies. It has been found that the GaAs/Fe/Au system has additional uniaxial magnetic anisotropy, while the bulk Fe has biaxial anisotropy. The uniaxial anisotropy shows increasing dependency respected to decreasing thickness of Fe layer while biaxial anisotropy is reduced with Fe film thickness. This result allows the analysis that the uniaxial anisotropy is originated from interface between GaAs surface and Fe layer.

• Proceedings of the Korean Magnestics Society Conference
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• 1998.05a
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• pp.38-39
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• 1998

• Journal of the Korean Magnetics Society
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• v.23 no.1
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• pp.7-11
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• 2013

We investigate the perpendicular magnetic anisotropy in $TiO_2$/Co/Pd on GaAs(100), MgO(100), MgO(111), Si(100), and glass substrates. We find that the roughness of $TiO_2$ depends on the $O_2$ partial pressure in the magnetron sputtering process. The perpendicular magnetic anisotropies are found in all substrates with $TiO_2$ seed layer, and the perpendicular magnetic anisotropy of Co/Pd system is insensitive on the type of the substrate when the thickness of $TiO_2$ seed layer is thicker than 5 nm. However, MgO(111) substrate promotes $TiO_2$ rutile (111) structure, and it causes largest perpendicular magnetic anisotropy in $TiO_2$/Co/Pd(111) structures.

• Journal of the Korean Magnetics Society
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• v.4 no.2
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• pp.179-183
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• 1994

A high efficiency small electromagnet (22 mm air gap and $40{\times}25mm^{2}$ core's cross section) suitable for measuring magnetostriction and magnetic anisotropy was biult. The magnet could be minaturized by reducing the measuring space and time. The excitation current of the electromagnet was supplied for only a few second of measuring time. Cooling system of the electromagnet could be eliminated since the dissipation energy was very small. An 0.5 T magnetic field was generated with 180 W power consumption. The values of magnetostriction and magnetic anisotropy were measured with a very sensitive capacitance cell with resolution of $10^{-8}$ and 1 nJ. The torque was calibrated using a soft magnetic ribbon's shape anisotropy.

• Journal of the Korean Magnetics Society
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• v.7 no.4
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• pp.186-190
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• 1997

We measured an anisotropy inhomogeniety and dispersion of rf sputterd permalloy thin films by TBP(Transverse Biased Permeability) measurement method. Angular distribution function had a shape similar to the Lorentzian distribution, but magnitude distribution function deviates from the sysmetric Lorentzian distribution because of long tail to the region of a high Hk value. With increasing film thickness, the angular and magnitude anisotropy dispersion increased. The increase of angular dispersion was due to both the increase of grain size and local anisotropy in thicker films.