• Journal of the Korean Vacuum Society
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• v.4 no.1
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• pp.67-76
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• 1995

자기저항헤드용 Ni-Fe-Co/Cu/Ni-Fe-Co/Fe-Mn 다층박막에서 자기적 성질과 전기적 성질에 관하여 조사하였다. 저 포화자계에서 고 자기저항을 나타내는 스핀 밸브형 다층박막을 제작하기 위하여 Borond이 도핑된 p-type Si(100)기판위에 Ni-Fe-Co 단층박막과 Si/Ni-Fe-Co/Cu/Ni-FeCo, Si/Ni-Fe-Co/Fe-Mn 구조의 다층막을 제작하여 자기적 특성을 조사하였다. Ni-Fe-Co 단층박막의 자기적 특성은 고정된 아르곤 분압에서 박막의 두께 등에 의존성이 있는 것으로 나타났다. 또한 Si/Ni-Fe-Co($70AA$)/Fe-Mn 구조에서 Ni-Fe-Co와 Fe-Mn 계면에서의 두 자성층의 이방성 차이에 의해서 발생되어지는 교환자기이방성이 존재하였으며, 교환자기이방성자계값은 Fe-Mn 두께가 $150\AA$일 때 가장 큰 값을 나타내었다. Ni-Fe-Co texture와 교환자기이방성자계값은 Fe-Mn 두께가 $150\AA$일 때 가장 큰 값을 나타내었다. Ni-Fe-Co texture와 교환자기이방성자계값의 의존성을 알아보기 위하여 Ti, Cu를 바닥층으로 사용하였다. Ti을 바닥층으로 사용하였을 경우, 교환자기이방성자계값은 23.5 Oe 정도의 가장 큰 값을 나타내었다. XRD 분석결과, Ti 바닥층이 Cu 바닥층이나, 바닥층이 없는 경우와 비교하여 성막된 Ni-Fe-Co 자성층의 강한 fcc(111) texture를 형성하는 것으로 나타났다. 각각의 단층박막과 다층박막에서의 자기적 특성을 측정한 후, Si/Ti($50\AA$)/Ni-Fe-Co($70\AA$)/Cu($23\AA$)/Ni-Fe-Co($70\AA$)/Fe-Mn(150$\AA$)/Cu(50$\AA$)의 스핀밸브구조를 갖는 다층박막을 제작하였으며, 11 Oe의 낮은 포화자계값에서 4.1%의 고 자기저항값을 얻을 수 있었다.

• Journal of the Korean Magnetics Society
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• v.19 no.4
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• pp.133-137
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• 2009

$MnGeP_2$ thin films grown on GaAs exhibit room-temperature ferromagnetism with $T_C{\sim}$320 K, based on both magnetization and resistance measurements. The coercive fields at 5, 250, and 300 K are 3870, 1380 and 155 Oe, respectively. The anomalous Hall effect was observed, indicating spin polarization of the carriers. Hysteresis has been observed in both magnetoresistance and Hall measurements. The current-voltage characteristics of a $MnGeP_2$ film grown on an n-type GaAs substrate display semiconducting behavior.

• Journal of the Korean Magnetics Society
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• v.5 no.3
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• pp.210-215
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• 1995

$Glass\Cr_{40\AA}\{[Cr_{10\AA}\NiFe_{50\AA}]}_N$ multilayers (number of layer N = 1, 2, 3, 4, 5, 6, 10) were made by dc magnetron sputtering under magnetic anisotropy of 200 G. Magnetoresistance curve MR(xx), MR(xy) were measured for the parallel and perpendicular current direction to external magnetic field. MR(xx) curves for the number of layer N=1, 5, 10 were almost became about zero percent, however the curves of other numbers appeared the phenomena of "positive magnetoresistance" that the resistance increased to external magnetic field, and the irregular and reversed curves in the vicinity of H=0 Oe.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.137-141
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• 2005

The CMR properties and magnetic properties of sulphospinels $Zn_xFe_{1-x}Cr_2S_4$ have been explored by X-ray diffraction, magnetoresistance measurement, and $M\ddot{o}ssbauer$ spectroscopy. The crystal structures in the range of x=0.05, 0.1, 0.2 are cubic at room temperature. Magnetoresistance measurement indicates that these system is semiconducting below about 160 K. The temperature of maximum magnetoresistance is almost consistent with Curie temperature. The Zn substitutions for Fe occur to increase the Jahn-Teller relaxation and the electric quadrupole shift. CMR properties could be explained with Jahn-Teller effect, and half-metallic electronic structure, which is different from both the double exchange interactions of manganite La-Ca-Mn-O system and the triple exchange interactions of chalcogenide $Cu_xFe_{1-x}Cr_2S_4$.

• Proceedings of the Korean Magnestics Society Conference
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• 1999.10a
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• pp.116-117
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• 1999

• Proceedings of the Korean Magnestics Society Conference
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• 2005.06a
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• pp.66-66
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• 2005

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.61-66
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• 2005

In order to make submicron cell for spin-injection device, lift-off method using Pt stencil and wet etching was chosen. This approach allows batch fabrication of stencil substrate with electron-beam lithography. It simplifies the process between magnetic film stack deposition and final device testing, thus enabling rapid turnaround in sample fabrication. Submicron junctions with size of $200nm{\times}300nm$ and $500nm{\times}500nm$ 500 nm and pseudo spin valve structure of $CoFe(30{\AA})/Cu(100{\AA})/CoFe(120{\AA}$) was deposited into the nanojunctions. MR ratio was 0.8 and $1.1{\%}$, respectively and spin transfer effect was confirmed with critical current of $7.65{\times}10^7A/cm^2$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.1
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• pp.36-41
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• 2002

Abstract The stoichiometric and double-ordered perovskite $Sr_2FeMoO_6$ (SFMO) polycrystalline ceramics were fabricated by sintering at above $900^{\circ}C$ in $H_2$(5%)/Ar reductive ambient. SMO polycrystals showed good ferromagnetic properties andmagnetrotesistqnce ratios of about 15 % at 8K and 3 % at room temperature. Amorphous SFMO thin films were deposited on $LaA1O_3$ and $SrTiO_3$ single crystal substrates using rf sputtering method with the SFMO polycrystalline ceramic target. Double-ordered perovskite polycrystalline SFMO thin films were fabricated by solid state crystallization by annealing the deposited amorphous films at above $680^{\circ}C$ in $H_2$(5%)/Ar reductive ambient. SFMO thin films exhibited ferromagnetic behavior. Their magnetroresistance ratios, however, were only 0.3~0.5% at 8K and disappeared with increasing the measuring temperature. This was attributed to the absence of magnetic spin tunneling between grains due to the porous structure and non-stoichiometric composition of the deposited films.

• 전기의세계
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• v.10
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• pp.72-82
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• 1963

자기증폭기는 제어계통의 중요한 요소로써 발전되어왔고 자기재료와 금속정류기의 급진적개량은 자기증폭기를 그 반영구적인 수명과 더불어 Mean Power Amplifier로써 확고하게 하였다. 자기증폭기의 동작특성은 자기철심재료의 비선형특성을 이용한 것으로 문제의 해석을 근본적으로 취급하려면 비선형이론의 문제에 완전히 귀착함으로 인한 난점과 복잡성이 따르게 된다. 그러나 자기증폭기의 특성을 그런 비선형문제로 취급하여서는 선과를 얻기가 대단히 곤란하며 현재의 수학으로써 불가능할 것이다. 본지에서는자기증폭기의 원리 및 각종부하 - 저항부하, 유도성부하, 용량성부하에 대한 동작 특성의 변화에 대하여 기술코져 한다.

• Journal of the Korean Magnetics Society
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• v.17 no.2
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• pp.95-98
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• 2007

In this paper, the magnetic properties and the annealing behavior of spin valve structures with Mo(MoN) underlayers were studied for various underlayer thickness. The spin valve structure was Si substrate/Mo(MoN)$(t{\AA})/NiFe(21{\AA})/CoFe(28{\AA})/Cu(22{\AA})/CoFe(18{\AA})/IrMn(65{\AA})/Ta(25 {\AA})$. Mo and MoN films were deposited on Si substrates and their thermal annealing behavior was analyzed. The deposition rate of the MoN thin film was decreased and tile resistivity of the MoN thin films were increased as the $N_2$ gas flow was increased. The variations of MR ratio and magnetic exchange coupling field of spin valve structure were smaller with MoN underlayers than that with Mo underlayers up to thickness of $51{\AA}$. MR ratio of spin valves with Mo underlayers was 2.86% at room temperature and increased up to 2.91 % after annealing at $200^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased about 2.16%. The MR ratio of spin valves structure with MoN underlayers for $N_2$ gas flow 1 sccm was 5.27% at room temperature and increased up to 5.56% after annealing at $200^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased about 4.9%.