• Title/Summary/Keyword: 잉곳

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Optimization of Ingot Mold Design Parameters for Austenite Heat-resistant Steel Through Computational Simulation (전산모사를 통한 오스테나이트계 내열강용 잉곳 몰드 설계 파라미터 최적화)

  • Hwang, SooBeen;Park, JongHwa;Jo, SangHyun;Park, SeongIk;Kim, YunJae;Kim, Donggyu
    • Journal of Korea Foundry Society
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    • v.42 no.1
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    • pp.3-11
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    • 2022
  • In this study, the parameters on the shrinkage defect of HR3C alloy was secured through computer simulation research, and the ingot mold with greater than 85% of sound area was designed and manufactured. Moreover, the optimized coagulation was proposed at design stage through computer simulation and test was performed upon ingot manufactured. After the test, the defect pattern was analyzed through cutting and non-destructive inspection to verify the parameter and ingot mold design. Based on the verification results, shrinkage defect parameters such as Niyama, Feed Efficiency, and Hot Tear Intensity of HR3C Alloys were obtained. In addition, through the secured parameters, a plan for designing ingot mold with a Non-defect area of 85% or more was secured.

Structural defects in the multicrystalline silicon ingot grown with the seed at the bottom of crucible (종자결정을 활용한 다결정 규소 잉곳 내의 구조적 결함 규명)

  • Lee, A-Young;Kim, Young-Kwan
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.24 no.5
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    • pp.190-195
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    • 2014
  • Because of the temperature gradient occurring during the growth of the ingot with directional solidification method, defects are generated and the residual stress is produced in the ingot. Changing the growth and cooling rate during the crystal growth process will be helpful for us to understand the defects and residual stress generation. The defects and residual stress can affect the properties of wafer. Generally, it was found that the size of grains and twin boundaries are smaller at the top area than at the bottom of the ingot regardless of growth and cooling condition. In addition to that, in the top area of silicon ingot, higher density of dislocation is observed to be present than in the bottom area of the silicon ingot. This observation implies that higher stress is imposed to the top area due to the faster cooling of silicon ingot after solidification process. In the ingot with slower growth rate, dislocation density was reduced and the TTV (Total Thickness Variation), saw mark, warp, and bow of wafer became lower. Therefore, optimum growth condition will help us to obtain high quality silicon ingot with low defect density and low residual stress.

Uranium ingot casting method with Uranium deposit in a Pyroprocessing (사용후핵연료 파이로 공정 중 우라늄 전착물의 잉곳 제조 방법)

  • Lee, Yoon-Sang;Cho, Choon-Ho;Lee, Sung-Ho;Kim, Jeong-Guk;Lee, Han-Soo
    • Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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    • v.8 no.1
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    • pp.85-89
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    • 2010
  • The uranium ingot casting process is one of the steps which consolidate uranium deposits produced by electrorefiner as an ingot form in a pryprocessing technique. This paper introduces new design concept of the ingot casting equipment and the performance test results of the lab-scale ingot casting equipment fabricated based on the design concept. Casting equipment produces the uranium ingot by pouring an uranium melt into a mold by tilting a melting crucible. Also it is equipped with a cup which is able to continuously feed uranium deposits into a melting crucible. The productivity could be significantly enhanced by introducing the continuous operation concept.

Growth and characterization of 240kg multicrystalline silicon ingots grown by directional solidification (방향성 응고법으로 성장된 대형(240kg) 다결정 규소 잉곳의 성장 및 특성평가)

  • 김정민;김영관
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.13 no.4
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    • pp.182-186
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    • 2003
  • The photovoltaic industry has been forced to lower the production cost in many ways. Ingot preparation technology is growing rapidly toward large-scale production. Multicrystalline silicon ingot of 69 cm square cross section, 240kg has been produced with fully automated equipment. During solidification, heat has been extracted from the bottom of the crucible through the graphite pedestal moving downward. The characteristics of the large ingot grown in this method are found to be uniform structurally and electrically.

A Study on GaAs Ingot Growth Technique Applied to VGF(Vertical gradient freeze) Growth Method (수직온도구배 성장 공법을 적용한 갈륨비소 잉곳 성장 기술 연구)

  • Park, Youngtae;Park, Hyunbum
    • Journal of Aerospace System Engineering
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    • v.16 no.5
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    • pp.57-61
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    • 2022
  • The various GaAs panel are applied widening for aircraft and aerospace structures. This study presented technology for the growth of large-diameter GaAs ingots greater than 4 inches through numerical analysis using temperature control technology. In this work, proposes manufacturing technology adapted to various temperature and environmental changes through temperature simulation. With the development of ingot technology, the possibility of future application increased by obtaining expected results with minor deviation.

Development of the Ag/Cu Ingots for Mokumegane Jewelry (모꾸메가네 장신구를 위한 은/동 접합 잉곳 소재 개발)

  • Song, Oh-Sung;Kim, Jong-Ryul;Kim, Myung-Ro
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.9 no.1
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    • pp.9-15
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    • 2008
  • Mokumegane is one of the sophisticated metal craft techniques enabling wood grain surface effect. To embody the mokumegane, an ingot of well-bonded stacked metal plates has been required. Traditionally prepared mokumegane ingots were bonded using charcoal which enables reduction atmosphere, but sometimes end up with collapse of bonding interface due to the lack of reliable process control. We proposed a systematic vacuum direct bonding process for ingots. First, we confirmed copper//copper homogeneous plate bonding at $900^{\circ}C$ by applying uniaxial press of 2.5kg. We observed 80min required to obtain 90%-bonding ratio and the diffusion coefficient would be enhanced up to 100 times due to surface effect. Second, by considering enhanced diffusion behavior, we also obtained optimum bonding condition in copper/silver heterogeneous plates that ensures 90%-bonding ratio at $700^{\circ}C$ for 10min with apply uniaxial press. A 7-layered copper/silver ingot is prepared successfully, and eventually the prototype mokumegane cases for mobile phone were fabricated with these ingot.

Evaluation of silicon powder waste quality by electromagnetic induction melting and resistance test (단결정 잉곳의 표면 그라인딩에서 발생하는 고순도 실리콘 분말 폐기물의 용해 및 품질 평가)

  • Moon, Byung Moon;Kim, Gangjune;Koo, Hyun Jin;Shin, Je Sik
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.05a
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    • pp.187.2-187.2
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    • 2011
  • 태양광산업의 value chain중 up-stream쪽인 고순도 실리콘산업은 셀, 모듈, 시스템 쪽에 비하여 영업 이익률이나 부가가치 측면에서 매우 높은 성장성을 현재 보여주고 있으며 최근 원자력산업의 안전성 문제가 대두됨으로 인하여 태양광수요가 전 세계적으로 증대되는 경향을 나타내어 태양광용 실리콘의 수요가 확대됨과 아울러 spot시장에서의 가격 또한 상승하고 있다. 이런 관점에서 잉곳 및 웨이퍼 가공 중에 발생하는 고순도 실리콘 폐기물의 재활용 이 다시 주목받고 있다. 태양전지 웨이퍼(wafer)용 소재는 6N급 이상의 결정질 실리콘 잉곳(ingot)이 주를 이루며, 고효율의 셀을 제조하기 위해서 단결정 실리콘 잉곳이 많이 사용된다. 실리콘 단결정을 육성하는 방법에는 Floating zone 법, Czochralski 법, Bridgeman 법, CVD 등 매우 다양하다. 이 중 Czochralski 법은 전체 생산량의 대부분을 차지하고 있는 방법으로, 용융액에서 결정을 인상하여 ingot을 제작하는 방법이다. 그러나 대량의 전기에너지를 소비하여 제작되는 고순도의 실리콘 단결정 잉곳은 후 가공공정에서 그 절반 이상이 분말(powder) 및 슬러지(sludge)로 폐기되므로, 자원의 재활용 및 환경오염 측면에서 주요과제가 되고 있다. Czochralski 법으로 제작된 ingot의 경우 그 표면이 매끄럽지 못하여, 웨이퍼 단위의 가공 시 형태가 진원이 될 수 있도록 표면을 미리 연마(grinding)하는데, 이때에도 미세 분말이 다량 발생하게 된다. 본 연구에서는 이러한 고순도 단결정 실리콘 ingot의 연마 가공공정에서 발생한 미세 분말을 용해하여 보았다. 진공 챔버(chamber) 내부에 유도가열 코일과 냉도가니로 구성된 장비를 통해 전자기유도가열을 이용하여 실리콘 분말 폐기물을 용해하고, 그 시편을 ICP-MS 및 비저항 측정을 통해 분말 의 특성을 조사하여 재활용 가능성을 검토해 보았다.

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Study on the Remelting of Titanium Scrap by DC-ESR Process (DC-ESR법(去)을 이용한 타이타늄 스크랩의 재용융(再熔融)에 관한 연구(硏究))

  • Seo, Yeung-Deuk;Lee, Ho-Seong;Sohn, Ho-Sang
    • Resources Recycling
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    • v.16 no.4
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    • pp.33-39
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    • 2007
  • Titanium scrap was re-melted and refined by using a DC-ESR (Direct Current Electro Slag Remelting) apparatus. A graphite rod was used as an anode. The used slag was $CaF_2-TiO_2-CaO$ slag system. The effect of slag composition on the shape and oxygen content of re-melted ingot was studied. The titanium ingot was produced very well from the $CaF_2-TiO_2$ slag system, and the oxygen content of the ingot was less than that of titanium scrap. The addition of CaO into $CaF_2-TiO_2$ slag system made the bad shape of titanium ingot. The oxygen content of the ingot was also higher than that of titanium scrap.

실리콘 태양전지용 잉곳/웨이퍼 기술 개발 동향 및 향후 전망: 전통에 도전하여 혁신으로 일어선다!

  • Nam, U-Seok
    • Bulletin of the Korea Photovoltaic Society
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    • v.1 no.2
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    • pp.10-14
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    • 2015
  • 실리콘 태양광 시장에서 중국은 독일을 필두로 하는 유럽연합, 미국 그리고 일본의 규모를 넘어서고 있는 근래의 최강자임을 부정할 수 있는 이는 없을 것이다. 그런 반면, 국내 태양광 가치사슬의 주요 기업들은 공룡과의 경쟁에서 큰 어려움을 겪었으나, 나름의 성과와 상승세를 나타내면서 이제 조금씩 깊은 굴곡을 벗어나려는 노력을 경주하고 있다. 본고에서는 현재 태양광 가치사슬의 현실에서 시장상황에 가장 큰 타격을 받고 있는 잉곳/웨이퍼 분야에 대하여, 관련기업들의 자립을 위한 노력과 현재, 미래 기술 동향에 대하여 소개하고자 한다.

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