• Title/Summary/Keyword: 입.출력 특성

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CPW travelling-wave electrodes, Mach-Zehnder type Ti:LiNbO3 optical modulator (CPW 진행파 전극, M-Z형 Ti:LiNbO3 광 변조기)

  • Pi Joong-Ho;Jung Eun-Joo;Choi Jung-Sung;Kim Chang-Min
    • Korean Journal of Optics and Photonics
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    • v.15 no.5
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    • pp.475-482
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    • 2004
  • We have fabricated a LiNbO$_3$ travelling-wave optical modulator. The travelling-wave modulator consisted of M-Z(Mach-Zehnder) interferometer and CPW(Coplanar Waveguide) travelling-wave electrodes. Design of CPW electrodes were performed by SOR(Successive Over Relaxation) to obtain the conditions of Microwave effective index and impedance matching. The fabricated modulator had -3.2 dB insertion loss, and S$_{11}$ below -15 dB up to 12 GHz, S$_{21}$ better than -3 dB upto 7 GHz. It turned out that the optical response showed the 3 dB bandwidth of above 12 GHz.

Design and Fabrication of 5-Bit Broadband MMIC Phase Shifter (5-Bit 광대역 MMIC 위상 변위기 설계 및 제작)

  • 정상화;백승원;이상원;정기웅;정명득;우병일;소준호;임중수;박동철
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.13 no.2
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    • pp.123-129
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    • 2002
  • 5-bit broadband MMIC phase shifter has been designed and fabricated. For the broadband performance, 11.25$^{\circ}$, 22.5$^{\circ}$, 45$^{\circ}$ and 90$^{\circ}$ bit have been designed with Lange coupler and 180$^{\circ}$ bit has been implemented by using shorted coupled line with Lange coupler and $\pi$-network of transmission line. Due to Lange coupler with large size, the Lange couplers have been folded far circuit size reduction. Low loss PIN diode has been utilized as a switch for each bit. Fabricated 5-bit broadband phase shifter shows the measured results that RMS phase error of 5 major phases is 3.5$^{\circ}$, maximum insertion loss is 12.5 dB, and maximum input and output return loss are 7 dB and 10 dB, respectively. The size of fabricated phase shifter is 6.5$\times$5.3 $ extrm{mm}^2$.

The Design and Fabrication of X-Band MMIC Low Noise Amplifier for Active antennal using P-HEMT (P-HEMT를 이용한 능동 안테나용 X-Band MMIC 저잡음 증폭기 설계 및 제작)

  • 강동민;맹성재;김남영;이진희;박병선;윤형섭;박철순;윤경식
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.9 no.4
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    • pp.506-514
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    • 1998
  • The design and fabrication of X-band(11.7~12 GHz) 2-stage monolithic microwave integrated circuit(MMIC) low noise amplifier (LNA) for active antenna are presented using $0.15{\mu}m\times140{\mu}m$ AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (P-HEMT). In each stage of the LNA, a series feedback by using a source inductor is used for both input matching and good stability. The measurement results are achieved as an input return loss under -17 dB, an output return loss under -15dB, a noise figure of 1.3dB, and a gain of 17 dB at X-band. This results almost concur with a design results except noise figure(NF). The chip size of the MMIC LNA is $1.43\times1.27$.

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The Switching Characteristic and Efficiency of New Generation SiC MOSFET (차세대 전력반도체 SiC MOSFET의 스위칭 특성 및 효율에 관한 연구)

  • Choi, Won-mook;Ahn, Ho-gyun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.21 no.2
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    • pp.353-360
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    • 2017
  • Recently, due to physical limitation of Si based power semiconductor, development speed of switching power semiconductors is falling and it is difficult to expect any further performance improvements. SiC based power semiconductor with superior characteristic than Si-based power semiconductor have been developed to overcome these limitations. however, there is not method to apply for real system. Therefore, suggested the feasibility and solution for SiC-based power semiconductor system. design to 1kW class DC-DC boost converter and demonstrated the superiority of SiC MOSFET under the same operating conditions by analyzing switching frequency, duty ratio, voltage and current, and comparing with Si based power semiconductor through experimental efficiency according to each system load. The SiC MOSFET has high efficiency and fast switching speed, and can be designed with small inductors and capacitors which has the advantage of volume reduction of the entire system.

Design of YK2 Cipher Algorithm for Electronic Commerce Security (전자상거래 보안을 위한 YK2 암호 알고리즘 설계)

  • Kang, Young-Ku;Rhew, Sung-Yul
    • The Transactions of the Korea Information Processing Society
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    • v.7 no.10
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    • pp.3138-3147
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    • 2000
  • EC(Electronic Commerce) which is cone the virtual space through Internet, has the advantage of time and space. On the contrary, it also has weak point like security probelm because anybody can easily access to the system due to open network attribute of Internet. Theretore, we need the solutions that protect the EC security problem for safe and useful EC activity. One of these solution is the implemonlation of a strong cipher algorithm. YK2(YoungKu Kang) cipher algorithm proposed in this paper is advantage for the EC security and it overcomes the limit of the current 6/1 bits block cipher algorithm using 128 bits key length for input, output, encryption key and 32 rounds. Moreover, it is degigned for the increase of time complexity and probability calculation by adapting more complex design for key scheduling regarded as one of the important element effected to enciyption.

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2×2Ti:LiNbO3 Integrated Optical Add/Drop Multiplexers utilizing Strain-Optic Effect (스트레인광학효과를 이용한 2×2Ti:LiNbO3 삽입/분기 집적광학 멀티플렉서)

  • Jung, Hong-Sik;Choi, Yong-Wook
    • Korean Journal of Optics and Photonics
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    • v.17 no.5
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    • pp.430-436
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    • 2006
  • Polarization-independent $Ti:LiNbO_3\;2{\times}2$ optical add/drop multiplexer for the 1550nm wavelength region is fabricated. The device consists of two input waveguides, two polarization beam splitters. two polarization conversion/electrooptic tuning waveguide sections, and two output waveguides. The single mode channel waveguides for both TE and TM polarizations are fabricated on a x-cut $Ti:LiNbO_3$substrate by Ti diffusion. Spectral section is based on phase-matched polarization conversion due to shear strain induced by a thick $SiO_2$ grating overlay film. An applied voltage tunes the device by changing the waveguide birefringence, hence the optical wavelength at which most efficient polarization conversion occurs. Tuning rate of 0.094nm/V with a maximum range of 17nm has been obtained. The nearest side-lobe is about 8.2dB. The FWHM is 3.72nm.

Influence of Precursor on the Electrochemical Properties of Li(Ni0.5Co0.2Mn0.3)O2 Cathode for the Lithium Secondary Battery (전구체의 물성에 따른 리튬 2차전지용 Li(Ni0.5Co0.2Mn0.3)O2의 전기화학적 특성 변화)

  • Kang, Donghyun;Arailym, Nurpeissova;Chae, Jeong Eun;Kim, Sung-Soo
    • Journal of the Korean Electrochemical Society
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    • v.16 no.4
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    • pp.191-197
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    • 2013
  • The one of the cathode material, $Li(Ni_{0.5}Co_{0.2}Mn_{0.3})O_2$, was synthesized by the precursor, $Ni_{0.5}Co_{0.2}Mn_{0.3}(OH)_2$, from the co-precipitation method and the morphologies of the primary particle of precursors were flake and needle-shape by controlling the precipitation parameters. Identical powder properties, such as particle size, tap density, chemical composition, were obtained by same process of lithiation and heat-treatment. The relation between electrochemical performances of $Li(Ni_{0.5}Co_{0.2}Mn_{0.3})O_2$ and the primary particle morphology of precursors was analyzed by SEM, XRD and EELS. In the $Li(Ni_{0.5}Co_{0.2}Mn_{0.3})O_2$ cathode from the needle-shape precursor, the primary particle size was smaller than that from flake-shape precursor and high Li concentration at grain edge comparing grain center. The cycle and rate performances of the cathode from needle-shape precursor shows superior to those from flake-shape precursor, which might be attributed to low charge-transfer resistance by impedance measurement.

Analyses of Larg Cell Area MCFC System Dynamics (대면적 용융탄산염 연료전지 시스템 동특성 분석)

  • 강병삼;고준호;이충곤;임희천
    • Journal of Energy Engineering
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    • v.8 no.4
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    • pp.592-604
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    • 1999
  • The steady state and dynamic characteristics of large cell area MCFC stacks were analyzed to solve the problems such as temperature difference generated in stacks and pressure difference between anode and cathode. Manipulated variables (current density, duel utilization rate, oxidant utilization rate) and controlled variables (temperature difference, anode and cathode pressure difference) which had an important effect on the MCFC stack performance were determined using operation results of two types of MCFC stacks (5kW (3,000 $\textrm{cm}^2$, 20 ea). 3kW (6,000 $\textrm{cm}^2$, 5ea)). The stability and transfer function representing system dynamics were obtained by steady state gain rate which showed the relative change between MVs and CVs. The transfer function was a 3$\times$3 matrix and a typical first order system without time delay. The optimal operating condition of large cell area MCFC stacks could be determined by analyzing dynamic characteristics. In case of a 5 kW MCFC stack, pressurized operation with recycle flow should be used to control the outlet temperature less than 68$0^{\circ}C$ and to control the MCFC system effectively. MIMO control or decoupler should be used to remove the interaction between MVs and CVs. This result will be used as important data in determining the control structure design and operation mode of large cell area MCFC systems in the future.

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A Miniaturized 2.5 GHz 8 W GaN HEMT Power Amplifier Module Using Selectively Anodized Aluminum Oxide Substrate (선택적 산화 알루미늄 기판을 이용한 소형 2.5 GHz 8 W GaN HEMT 전력 증폭기 모듈)

  • Jeong, Hae-Chang;Oh, Hyun-Seok;Yeom, Kyung-Whan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.12
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    • pp.1069-1077
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    • 2011
  • In this paper, a design and fabrication of a miniaturized 2.5 GHz 8 W power amplifier using selectively anodized aluminum oxide(SAAO) substrate are presented. The process of SAAO substrate is recently proposed and patented by Wavenics Inc. which uses aluminum as wafer. The selected active device is a commercially available GaN HEMT chip of TriQuint company, which is recently released. The optimum impedances for power amplifier design were extracted using the custom tuning jig composed of tunable passive components. The class-F power amplifier are designed based on EM co-simulation of impedance matching circuit. The matching circuit is realized in SAAO substrate. For integration and matching in the small package module, spiral inductors and single layer capacitors are used. The fabricated power amplifier with $4.4{\times}4.4\;mm^2$ shows the efficiency above 40 % and harmonic suppression above 30 dBc for the second(2nd) and the third(3rd) harmonic at the output power of 8 W.

A Study on the Systematic Integration of WASP5 Water Quality Model with a GIS (GIS와 WASP5 수질모델의 유기적 통합에 관한 연구)

  • 최성규;김계현
    • Spatial Information Research
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    • v.9 no.2
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    • pp.291-307
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    • 2001
  • In today's environmental engineering practice, many technologies such as GIS have been adopted to analyze chemical and biological process in water bodies and pollutants movements on the land surface. However, the linkage between spatially represented land surface pollutants and the in-stream processes has been relatively weak. This lack of continuity needs to develop a method in order to link the spatially-based pollutant source characterization with the water quality modeling. The objective of this thesis was to develop a two-way(forward and backward) link between ArcView GIS software and the USEPA water quality model, WASP5. This thesis includes a literature review, the determination of the point source and non-point source loadings from WASP5 modeling, and the linkage of a GIS with WASP5 model. The GIS and model linkage includes pre-processing of the input data within a GIS to provide necessary information for running a model in the forms of external input files. The model results has been post-processed and stored in the GIS database to be reviewed in a user defined form such as a chart, or a table. The interface developed from this study would provide efficient environment to support the easier decision making form water quality management.

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