• Journal of Adhesion and Interface
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• v.15 no.2
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• pp.57-62
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• 2014

Pythagolas rule was used for investigation of static contact angle in particular figures. Static contact angle measurement was important to evaluate the wettability between solid and liquid. Optimum measurement method and standardization of calculation for static contact angle were investigated for practical application. Optimum diameter of droplet for static contact angle measurement was confirmed as 1 mm. Contact angle measurement using Pythagolas rule was also used to calculate advancing, receding angle and wettability of different surface condition. At last, it was concluded that the Pythagolas rule method was more accurate than general lineation method for static contact angle measurement.

• The korean journal of orthodontics
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• v.36 no.4
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• pp.295-307
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• 2006

Objective: The purpose of this study was to compare the histological and biomechanical characteristics of self-tapping and self-drilling microscrew implants. Methods: 112 microscrew implants (56 self-drilling and 56 self-tapping) were placed into the tibia of 28 rabbits. The implants were loaded immediately with no force, light (100 gm), or heavy force (200 gm) with nickel-titanium coil springs. The animals were sacrificed at 3- and 5-weeks after placement and histologic and histomorphometric analysis were performed under a microscope. Results: All microscrew implants stayed firm throughout the experiment. There was no significant difference between self-drilling and self-tapping microscrew implants both in peak insertion and removal torques. Histologic examinations showed there were more defects in the self-tapping than the self-drilling microscrew implants, and newly formed immature bone was increased at the interface in the self-tapping 5-week group. There was proliferation of bone towards the outer surface of the implant and/or toward the marrow space in the self-drilling group. Histologically, self-drilling microscrew implants provided more bone contact initially but the two methods became similar at 5 weeks. Conclusion: These results indicate the two methods can be used for microscrew implant placement, but when using self-tapping microscrew implants, it seems better to use light force in the early stages.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.9
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• pp.1663-1670
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• 2006

Single crystal Fe thin films were grown directly onto n-Si(111) substrates by pulsed electrodeposition. Cyclic Voltammogram(CV) indicated that the $Fe^{2+}/n-Si(111)$ interface shows a good diode behavior by forming a Schottky barrier. From Mott-Schottky (MS) relation, it is found that the flat-band potential of n-Si(111) substrate and equilibrium redox potential of $Fet^{2+}$ ions are -0.526V and -0.316V, respectively. The nucleation and growth kinetics at the initial reaction stages of Fe/n-Si(111) substraste was studied by current transients. Current transients measurements have indicated that the deposition process starts via instantaneous nucleation and 3D diffusion limited growth. After the more deposition, the deposition flux of Fe ions was saturated with increase of deposition time. from the as-deposited sample obtained using the potential pulse of 1.4V and 300Hz, it is found that Fe nuclei grows to three dimensional(3D) islands with the average size of about 100nm in early deposition stages. As the deposition time increases, the sizes of Fe nuclei increases progressively and by a coalescence of the nuclei, a continuous Fe films grow on the Si surface. In this case, the Fe films show a highly oriented columnar structure and x-ray diffraction patterns reveal that the phase ${\alpha}-Fe$ grows on the n-Si(111) substrates.

• Korean Journal of Materials Research
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• v.3 no.1
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• pp.33-42
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• 1993

Abstract The increasing application of $Al_2$,$O_3$ and related ceramics as engineering materials is because of their attractive properties of fine ceramics. One solution to the wide variety of ceramic to metal combination lies in the effective joining. Active metal brazing of $Al_2$,$O_3$, to STS304 was investigated using Cu -Ti alloys. Titanium additive is chosen since it is good oxide former~. Brazing is performed under vacuum($10^{-3}$-$10^{-4}$ torr), a temperature between 1100 and 120$0^{\circ}C$ and time of 0.5-1.5hr. The microstructure of the brazed joints of $Al_2$,$O_3$ to STS304 with Cu-Ti insert metals were examined by using optical microscope and SEM and reaction products were analyzed by using EDX, WDX and XRD. Also interfacial reactions occuring during the brazing of $Al_2$,$O_3$/Cu-Ti/STS304 system are discussed. Experimental results showed formation of Titanium oxide T$i_2$$O_3$ which is attributable to the joining $Al_2$,$O_3$ to STS304 with Cu-Ti insert metal.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.3
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• pp.19-23
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• 2015

In this study, two types of Au/TiW bump samples were fabricated by the electroplating process onto Al/Si and SiN/Si wafers for the COG (Chip On Glass) packaging. TiW was used as the UBM (Under Bump Metallurgy) material of the Au bump and it was deposited by a sputtering method under the sputtering powers ranges from 500 to 5000 Watt. We investigated the delamination phenomenas for the prepared samples as a function of the input sputtering powers. The stable interfacial adhesion condition was found to be 1500 Watt in sputtering power. In addition, the SAICAS (Surface And Interfacial Cutting Analysis System) measurement was used to find the adhesion strength of Au bumps for the prepared samples. TiW UBM films were deposited at the 1500 Watt sputtering power. As a results, there was a similar adhesion strengths between TiW/Au interfacial films on Al/Si and SiN/Si wafers. However, the adhesion strength of TiW UBM sputtering films on Al and SiN under films were 2.2 times differences, indicating 0.475 kN/m for Al/Si wafer and 0.093 kN/m for SiN/Si wafer, respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.51-51
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• 2009

Ni 기 초내열합금은 원자력 발전설비의 열교환기용 재료를 비롯한 발전용 가스터빈, 제트엔진, 화학공장용 튜브 및 파이프재료 등 우수한 고온 기계적 특성 및 고온 내식성을 요구하는 각종 부품재에 광범위하게 이용되고 있다. Al 확산침투처리는 Ni기 초내열합금에 Al 혼합분말을 이용하여 금속간합화물을 코팅함으로써 고온산화특성 향상에 효과적인 방법이다. 본 연구에서는 Al 확산침투처리를 통하여 Inconel 617 표면에 Aluminide 코팅층을 형성함으로써 고온 내산화특성을 향상시키고자 하였다. Al 확산침투처리는 Al :$Al_2O_3$ : $NH_4Cl$ = 15g : 83g : 2g(wt.%)의 비율의 혼합분말을 사용하여 $900^{\circ}C$에서 1 시간 동안 Ar 분위기에서 수행되었다. Al 확산침투처리 후 $950^{\circ}C$에서 1000 시간 동안 air 분위기에서 열화시험을 수행하였다. Al 확산침투처리 후 고온열화를 통해 고온산화특성을 평가였으며, 고온 열화에 의해 형성된 코팅층의 석출물과 계면상의 상분석을 수행하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.32.2-32.2
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• 2010

본 연구에서는 고출력, 고휘도를 위해서 개발되고 있는 수직형 LED소자의 광출력향상을 위한 나노 패터닝 공정을 진행하였다. 수직형 LED는 기존 측면형 LED에 비해서 열방출 특성이 우수하고 대면적 칩으로 제작이 가능하기 때문에 높은 광출력이 필요한 조명 분야로의 적용이 가능하다. 하지만 수직형 LED 역시 기존 측면형 LED와 마찬가지로 질화갈륨 및 외부 공기와의 계면에서 전반사가 심하기 때문에 광추출효율이 낮은 문제점이 있으며 이를 해결하는 것이 큰 이슈가 되고 있다. 이를 해결하기 위해서 광결정 패턴을 LED 소자에 형성하여 광추출효율을 향상시키려는 연구가 활발히 진행되고 있으나 아직까지 수직형 LED 웨이퍼 전면적에 균일한 패턴을 형성할 수 있는 기술 개발이 미진한 상황이다. 본 연구에서는 유연 고분자 몰드를 이용한 대면적 나노 임프린팅 및 나노 프린팅 기술을 통해서 2 inch 수직형 LED 웨이퍼 전면적에 균일한 패턴을 전사하는 공정을 진행하였다. 구체적으로는 나노임프린트 및 건식식각 공정을 통해서 수직형 LED의 n형 질화갈륨 층에 높은 가로세로비의 광결정 패턴을 형성하였으며 이를 통해서 약 40% 정도의 광출력이 향상되었다. 또한 고 굴절률의 산화아연 나노 패턴 형성공정을 대면적 LED 기판에 시도하였다.

• Journal of Life Science
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• v.9 no.1
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• pp.84-91
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• 1999

Sediment samples from the waste-oil spilled sites were screened for microorganisms able to degrade the components of crude oil, and 3 strains that could degrade were obtained. The isolated 3 strains (Xl, X2 and X3) metabolized naphthalene and 2-methyl naphthalene about 80$\%$ as well as hexane and hexadecane about 60~70$\%$ as a sole carbon source in 7 days. The degradation of the waste oil was about 60$\%$. The addition of synthetic surfactant, Triton-X 100 or Tween 20 slightly inhibited the growth of the populations. Xl and X2 were gram negative and X3 was gram positive. Xl and X3 showed ampicillin resistancy. Xl strain having 30kb plasmid has been selected for genetic study. The plasmid was isolated and transformed into E. coli. showing the possibility of the genetically engineered degrader.

• Clean Technology
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• v.17 no.3
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• pp.280-282
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• 2011

Capture and conversion of abundant solar energy using biotechnology will be essential for the development of sustainable and future energy. Photosynthesis is used for the production of biofuels such as biohydrogen. In this study, lightharvesting xanthorhodopsin consisting of retinal and salinixanthin was isolated from a photosynthetic microorganism Salinibacter ruber by aqueous two phase extraction. To stabilize the light-harvesting machine, artificial xanthorhodopsin-liposome system was reconstructed to have photoelectron absorption activity.

• Korean Journal of Materials Research
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• v.8 no.5
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• pp.464-469
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• 1998

HF 세정후 자연 산화막의 존재가 급속 열처리 장비를 이용, 아르곤 분위기에서 열처리할 때 티타늄 실리사이드 형성을 관찰하였다. 고분해능 단면 투과 전자 현미경 관찰 결과 기판 온도가 상온일 때 자연산화막(native oxide)이 존재함을 확인하였으며 기판 온도가 40$0^{\circ}C$일 때는 실리콘 기판과 티타늄 박막의 계면 부위에서 자연산화막, 티타늄 및 실리콘이 혼합된 비정질층이 존재함을 확인하였다. 티타늄을 증착하는 동안 기판 온도를 40$0^{\circ}C$로 유지했을 때는 C54~$TiSi_2$상이 형성되는데 요구되는 급속 열처리(Rapid Thermal Annealing : RTA)온도가 기판 온도를 상오느로 유지 했을 때보다 $100^{\circ}C$정도 감소함을 확인하였다. 이 같은 결과는 산소불순물을 함유한 비정질 층이 핵생성 자리를 제공하여 이 상의 형성이 촉진된다는 사실을 말한다. 기판온도 $400^{\circ}C$에서 형성된 티타늄 실리사이드막의 경우 비저항 $\mu$$\Omega$cm임을 확인하였다.