• The Journal of the Petrological Society of Korea
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• v.10 no.3
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• pp.222-232
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• 2001

Secondary ion mass spectrometry (SIMS) uses focused high-speed primary ions to produce secondary ions from sample surface that are analyzed through a mass filter. SIMS is often called as ion microprobe, since it offers a micrometer-scale spatial resolution. Although the precision and accuracy of SIMS are not as good as many conventional mass spectrometers, it has several advantages such as small sample-size requirement, high spatial resolution and capability of in-situ analysis. In the field of geochemistry/cosmochemistry, SIMS is widely used for (1) stable isotope geochemistry of H, C, O, S, etc., (2) geochronology of U/Th-bearing minerals, (3) lateral distribution of trace elements in a mineral, and (4) discovery of presolar grains and investigation of their isotopic compositions.

• Fire Science and Engineering
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• v.22 no.5
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• pp.43-47
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• 2008

Recently SIMS has attracted interest as new technique to distinguish the primary and the secondary arc beads. A Cs+ primary ion beam was used to detect the $^{12}C^-$, $^{63}Cu^-$, $^{18}O^-$, $^{35}Cl^-$ secondary ions which are formed during depth profiles in the copper wires. In this work, we studied thermal diffusion in the copper wire which are occurred with supplying over-current. The results demonstrated that Carbon and Chloride are diffused in PVC-coated copper wire deeper than none PVC-coated. However Oxygen showed the reverse diffusion property.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.376-376
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• 2010

이차이온질량분석기(SIMS)는 수 kV의 에너지를 갖는 일차이온($O_2^+$, $Cs^+$)을 시료표면에 충돌시켜 표면에서 떨어져 나온 이온의 질량 및 개수를 분석하는 장비이다. SIMS는 성분원소의 깊이분포도 측정, 질량분석, Image mapping등 다양한 분석을 할 수 있다. 특히 극미량 분석이나 깊이분포도 분석에서 가장 뛰어난 성능을 가지고 있어 아직까지 많이 사용하고 있다. 하지만 SIMS는 이온빔을 이용한 스퍼터링(Sputtering) 방법으로 분석을 하므로 파괴적이며 매질효과가 심하다. 또한 Matrix 물질의 함량이나 물질 자체가 변한다면 Sputtering rate도 그에 따라 변하게 된다. 이러한 현상에 의해 Sputtering rate는 다른 물질이 섞여 있는 경우 Sputtering rate이 빠른 물질이 먼저 Sputtering이 되는 Preferential Sputtering 현상이 나타나기 때문에 계면에서 깊이분해능에 좋지 않은 영향을 주게 된다. 본 연구에서는 SIMS로 Si(100) 기판 위에 약 100nm 두께로 Fe가 증착된 시료를 분석하였다. 이차이온으로 $O_2^+$이온을 사용하였으며 이온의 입사각을 변화시켜 각 조건에서 생기는 Fe 표면의 Topograph을 SEM으로 관찰하였으며, Topograph와 SIMS깊이분해능의 관계을 이해하고 $O_2^+$ 이온의 입사각 변화에 따른 Fe 표면의 Topograph의 형태와 산화도를 이해하고자 한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.212-212
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• 2014

이트리아 안정화 지그코니아(Yttria-stabilized zirconia, YSZ)는 이트리아의 첨가에 의해 지르코니아에 생성된 산소 빈자리(oxygen vacancy)로 $O^{2-}$ 이온이 전도성을 가지게 되는 특징이 알려지면서 최근 고체산화물 연료전지연구에서 많은 관심을 받고 있다.[1] YSZ를 기반으로한 고체산화물 연료전지의 특성을 개선하기 위해서는 YSZ 내에서의 산소교환 메카니즘을 이해하는 것이 매우 중요하다. 본 연구에서는 $^{18}O2$ 추적 기체(tracer gas) 이용하여 확산된 YSZ박막에서의 산소 확산 거동을 초미세이차이온질량분석기(Nano Secondary Ion Mass Spectrometry, Nano SIMS)를 이용하여 조사하였다. Nano SIMS는 작은 입사 이온빔의 크기를 구현할 수 있고, 다중검출기를 이용하여 높은 질량분해능으로 간섭없이 산소동위원소를 동시에 모두 검출할 수 있는 장점이 있다. 본 발표에서는 Nano SIMS를 이용한 YSZ박막에서의 산소 거동 평가 결과를 상세하게 보일 것이다.

• The Journal of the Petrological Society of Korea
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• v.13 no.3
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• pp.119-125
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• 2004

Using a SHRIMP ion microprobe, we have dated zircon grains of a felsic meta-tuff from the so-cal1ed Munjuri Formation, Ogcheon metamorphic belt. The weighted mean $^{206}$ Pb/$^{238}$ U zircon ages obtained from 13 spot analyses of 10 grains provide an essentially concordant age of 747${\pm}$7Ma. This result corroborates the conventional U-Pb zircon age (756${\pm}$1Ma; Lee et al., 1998) for the Neoproterozoic bimodal volcanism in the Ogcheon belt. Thus, proto-basins associated with intracontinental, high-volcanicity rift in the Ogcheon belt are most likely to have formed at ca. 750 Ma.

• Journal of the Korean Solar Energy Society
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• v.34 no.4
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• pp.39-44
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• 2014

The elemental composition of electro-deposited black Cr solar selective coatings before and after heating in air by using secondary ion mass spectrometry (SIMS) was investigated for optical property analysis. In addition, black Cr selective coating exposed by solar radiation for 5 months was compared with heated sample. SIMS investigation shows that $OH^+$ bearing ions were related to a near surface region of CrOH and CrO compound. The optical degradation of this coating after heating at $500^{\circ}C$ reveals that diffusion of the Cu and Ni elements in substrate material, the chemical interactions adjacent to the interface, and the interface width broadening.

• Ceramist
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• v.22 no.4
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• pp.357-367
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• 2019

Secondary Ion Mass Spectrometry(SIMS) is an analytical method that measures the distribution and concentration of elements or compounds by analyzing the mass of secondary ions released by irradiating ion beams with energy of hundreds eV to 20 keV on the sample surface. Unlike other similar analytical instruments, SIMS directly detect the elemental ions that constitute a sample, allowing you to accurately identify components and obtain concentration information in the depth direction. It is also a great feature for measuring isotopes and analyzing light elements, especially hydrogen. In particular, with the development of materials science, there is an increasing demand for trace concentration analysis and isotope measurements in the micro-regions of various materials. SIMS has a short history compared to other similar methods; nevertheless, SIMS is still advancing in hardware and is expected to contribute to the development of materials science through research and development of advanced analytical techniques.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.48-56
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• 1999

In this paper, we have investigated experimentally the effects of initial oxygen concentration on oxygen pileup phenomenon and the diffusion of implanted impurities. 1.2 MeV $^{11}B^{+}$ and 2.2 MeV $^{31}P^{+}$ ions were implanted into p-type (100) Si wafers with a dose of 1${\times}10^{15}$ / $\textrm{cm}^2$. Secondary ion mass spectrometry(SIMS) measurements were carried out to obtain depth distribution profiles for implanted impurities and oxygen atoms after two-step annealing of $700^{\circ}C$(20 hours)+$1000^{\circ}C$(10 hours). Residual secondary defect distribution and annealing behabiour were also studied by cross-sectional transmission electron microscopy(TEM) observations. Oxygen pileup nearly $R_p$(projected range) were observed by SIMS measurements and considerable amount of residual secondary defect layer were observed by TEM observations. It can be seen that oxygen atoms are trapped at the secondary defects by the experimental results. Enhanced diffusions of boron and phosphorus to the bulk direction were observed with the increasing of initial oxygen concentration.

• The Journal of the Petrological Society of Korea
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• v.23 no.2
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• pp.139-144
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• 2014

A series of the planar cathodoluminescence (CL) and backscattered-electron (BSE) images of magmatic zircon from the Paleozoic Yeongdeok pluton in the southeastern Korean Peninsula were taken using a scanning electron microscope for a 3D reconstruction of internal zonation of zircon. Seven zircon crystals mounted in epoxy were serially polished with average $3{\mu}m$ thickness to their disappearance. Their 3D reconstruction of zonation was performed using the Volume Viewer function in the ImageJ software. The 3D oscillatory zoning pattern of zircon was apparently shown in all the analyzed crystals. This method can further be applied to zircon crystals of multiple growth histories as well as other geological materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.5
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• pp.392-397
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• 2011

The effect of various post-annealing temperature to sputtered Pb(Zr,Ti)$O_3$ (PZT) thin films was investigated. The crystallization process, surface morphology and the electrical characteristics strongly depends on the rapid thermal annealing (RTA). In radio frequency (RF) sputtering methods, there were many papers mostly forcing on the crystal forming and the surface variations with different elements distribution (Pb, Ti, Zr, O) on the surface of the PZT layer. In this experiment, the post-annealing treatment promoted the Pb volatilization in PZT thin film and affected the Ti diffused throughout the Pt layer into the PZT layer. Second ion mass spectroscopy (SIMS) analysis was employed to show that the Pb element in the PZT layer was decreased at the same time the Ti element mass was slight decreased than Pb with increasing RTA temperature. That result prove the content of Pb affect the PZT thin film property.