• Computational Structural Engineering
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• v.10 no.4
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• pp.165-175
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• 1997

In this paper, the stress, buckling and vibration analyses have been performed for several case with the spot weld stiffened rear side frame, the unstiffened rear side frame and the dual thickness laser weld rear side frame. For stress and vibration analyses, the clamped boundary condition with spring supports are used. But for the buckling analyses, the both ends simply supported boundary conditions are used. For the nummerical analyses, ANSYS 5.0 code is adopted. Maximum stress of the spot weld stiffened rear side frame occurs in the main frame and is 80.9 MPa. Maximum strain is 501 .mu.. The maximum stress of the dual thickness laser weld rear side frame of 1.8mm thickness structure is equal with the stress of spot weld stiffened frame. The weight of dual thickness laser weld frame can be reduced about 17.2%. For the stiffened spot weld rear side frame with both ends simply supported boundary conditon, the bucking load is 52.54 kN. When the thickness of the dual thickness laser weld rear side frame become 1.9mm thickness structure, the buckling load of the stiffenerd rear side frame is equal to that of dual thickness laser weld frame. The reduction of the structure weight is about 5%. The fundamental natural frequency of the stiffened spot weld rear side frame for bending mode is 163.6 Hz and that of the dual thickness laser weld rear side frame is 179.8 Hz.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.36 no.9
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• pp.961-970
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• 2012

The behavior of the load bearing capacity of a pipeline with unequal wall thickness was evaluated using finite element analyses. Pipelines with a wall thickness ratio of 1.22-1.89 were adopted to investigate plastic collapse under tensile, internal pressure, or bending stress. A parametric study showed that the tensile strength and moment of a pipeline with a wall thickness ratio less than 1.5 were not influenced by the wall thickness ratio and taper angle; however, those of a pipeline with a wall thickness ratio more than 1.5 decreased considerably at a low taper angle. The failure pressure of a pipeline with unequal wall thickness was not influenced by the wall thickness ratio and taper angle.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.152-152
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• 2010

이종접합 태양전지에서 Intrinsic a-Si:H의 역할은 상당히 중요하다. Passivation 효과와 높은 Voc에 이르는 핵심적인 Layer이다. 본 연구는 Intrinsic a-Si:H Layer의 증착조건을 가변하여 최적의 Passivation 효과를 얻는데 목적이 있다. 웨이퍼는 n-Type $500\;{\mu}m$두께에를 사용하였다. Intrinsic a-Si:H Layer는 $SiH_4$ 가스와 $H_2$ 가스를 혼합하여 증착하게 되는데 혼합비는 1:5로 고정하였다. 증착두께는 이종접합 태양전지에서 필요한 5nm로 고정하였으며 증착장비는 PECVD를 이용하였다. PECVD는 VHF(60MHz)를 이용하였고 증착온도는 $200^{\circ}C$로 고정하여 진행하였다. 가변내용은 전극거리와 파워, 압력이다. 전극거리는 20mm에서 80mm까지 가변하였고 압력은 100mTorr에서 500mTorr까지 가변하였다. 파워는 플라즈마의 방정특성을 알아본 후 최소파워를 이용하여 증착하였다. 이는 증착 시 플라즈마에 의한 박막 손상을 최소화하기 위함이다. 측정은 QSSPC 방식으로 Carrier Lifetime과 Implied Voc를 측정하였으며 두께는 Ellipsometry를 이용하여 측정하였다. 전극거리 60mm에서 증착압력은 400mTorr이고 파워는 $14mW/cm^2$에서 가장 높은 Carrier Lifetime 과 Implied Voc를 나타내었다. Carrier Lifetime은 2.2ms이고 Implied Voc는 709mV를 달성 하였다. Carrier Lifetime이 높으면 Surface Recombination이 낮다는 의미이며 이는 고효율 이종접합 태양전지 제작에 있어서 직렬저항을 줄일 수 있는 필수적인 요소이다. Implied Voc는 이종접합 태양전지의 Voc에 직결된 인자로 이종접합 태양전지의 Voc를 예상할 수 있는 중요한 요소이다.

• Journal of Chest Surgery
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• v.41 no.2
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• pp.170-176
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• 2008

Background: Bioprosthetic devices for treating cardiovascular diseases and defects may provide alternatives to autologous and homograft tissue. We evaluated the mechanical and physical conditions of a porcine pericardial bioprosthesis treated with Glutaraldehyde (GA), Ethanol, or Sodium dodecylsulfate (SDS) before implantation. Material and Method: 1) Thirty square-shaped pieces of porcine pericardium were fixed in 0.625%, 1.5% or 3% GA solution. 2) The tensile strength and thickness of these and other bioprosthesis, including fresh porcine pericardium, fresh human pericardium, and commercially produced heterografts, were measured. 3) The tensile strength and thickness of the six treated groups (GA-Ethanol, Ethanol-GA, SDS only, SDS-GA, Ethanol-SDS-GA and SDS-Ethanol-GA) were measured. Result: 1) Porcine pericardium fixed in 0.625% GA the thinnest and had the lowest tensile strength, with thickness and tensile strength increasing with the concentration of GA solution. The relationship between tensile strength and thickness of porcine pericardium increased at thicknesses greater than 0.1mm (correlation-coefficient 0.514, 0<0.001). 2) There were no differences in tensile strength or thickness between commercially-produced heterografts. 3) Treatment of GA, ethanol, or SDS minimally influenced thickness and tensile strength of porcine pericardium, except for SDS alone. Conclusion: Porcine pericardial bioprosthesis greater than 0.1 mm thick provide better handling and advantageous tensile strength. GA fixation did not cause physical or mechanical damage during anticalcification or decellularization treatment, but combining SDS-ethanol pre-treatment and GA fixation provided the best tensile strength and thickness.

• Proceedings of the Korean Society of Laser Processing Conference
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• 1998.11a
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• pp.16-19
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• 1998

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.317-317
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• 2014

본 연구에서는 이종접합 태양전지의 효율 증가를 위해서 초박 두께의 LiF 유전체 층을 후면에 증착하였다. 유전체 LiF층은 금속 전극의 Schottky barrier와 일 함수를 dipole moment를 통해 낮추게 되고 더 높은 전하 주입을 유도하여 장파장대에서 양자 효율을 높인다. 최적화된 20nm 두께의 LiF층은 후면에 ITO가 증착된 이종접합 태양전지와 ITO가 없는 태양전지에 각각 적용하였다. ITO층이 없는 이종접합 태양전지는 690 mV의 개방전압, 33.62 mA/cm2의 단락전류와 17.13 %의 효율을 보였으며 ITO층이 증착된 태양전지에서는 688 mV의 개방전압, 32.73 mA/cm2의 단락전류 그리고 16.83%의 효율을 보였다. QE와 단락전류에서의 개선은 장파장대에서의 광전하 수집이 기인한 것으로 보인다.

• Journal of Welding and Joining
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• v.14 no.1
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• pp.82-91
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• 1996

The maximum butt-joint gap size in $CO_2$ laser beam welding of SAPH steel plates with different thicknesses and its bending formability were studied. In the range of the gap size$\geq$0.1mm, the optimal butt welding speed was faster than that of no gap (air gap) condition. This behaviour was independent on the difference of thickness at any combination. Also, the allowable gap size in steel plates with different thicknesses was larger than with same thicknesses. In the range of $T/T_0$(bead shape) $\geq$ 0.8, good bending formability was obtained at any combination of thickness. The formability was improved by reducing the hardness in weld bead using pre-heating process. Finally, FEM result of the laser beam welded underframe with different thicknesses was compared to that of the conventional spot welded underframe.

• Proceedings of the KWS Conference
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• 1994.05a
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• pp.161-164
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• 1994

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.50-56
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• 2011

In this study, the effects of ZnO buffer layer thickness and annealing temperature on the heterojunction diode, ZnO/b-ZnO/p-Si(111), were reported. The effects of those on the structural and electrical properties of zinc oxide (ZnO) films on ZnO buffered p-Si (111) substrate were also studied. Structural properties of ZnO thin films were studied by X-ray diffraction and I-V characteristics were measured by a semiconductor parameter analyzer. ZnO thin films with 70 nm thick buffer layer and annealing temperature of $700^{\circ}C$ showed the best c-axis preferred orientation. The best electrical property was found at the condition of buffer layer annealing temperature of $700^{\circ}C$ and 50nm thick ZnO buffer layer (resistivity: $2.58{\times}10^{-4}[{\Omega}-cm]$, carrier concentration: $1.16{\times}1020[cm^{-3}]$). The I-V characteristics for ZnO/b-ZnO/p-Si(111) heterojunction diode were improved with increasing buffer layer thickness at buffer layer annealing temperature of $700^{\circ}C$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.41.1-41.1
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• 2011

본 연구에서는 MOCVD법으로 사파이어 기판위에 u-GaN를 성장한 후 Mg을 도핑시켜 p-GaN를 성장하고, RF 스퍼터를 이용하여 n-ZnO를 도포하여 n-ZnO/p-GaN 이종접합을 형성한 후 진공증착기를 이용하여 Au/Ni를 증착시켜 발광다이오드(LED)를 제작하고 전기 광학적 특성을 조사하였다. 두께가 500 nm인 u-GaN 위에 성장된 p-GaN의 운반자 농도는 $1.68{\times}10^{17}\;cm^{-3}$ 이었다. 그리고 150, 300 nm 두께의 p-GaN에 대하여 측정된 DXRD 반치폭은 각각 450 arcsec, 396 arcsec 이었고, 상온에서 2.8~3.0 eV 영역에서 Mg 억셉터와 관련된 광루미네센스가 검출되었다. RF 스퍼터링에 의해 0.7 nm/min의 속도로 증착된 n-ZnO 박막은 증착 두께에 따라 비저항이 27.7 $m{\Omega}{\cdot}cm$ 에서 6.85 $m{\Omega}{\cdot}cm$ 까지 감소하였다. 그리고 n-ZnO 박막은 (0002)면으로 우선 배향되었으며, 상온에서 에너지갭 관련된 광루미네센스가 3.25 eV 부근에서 주되게 검출되었다. n-ZnO/p-GaN 이종접합 LED의 전류전압 특성곡선은 다이오드 방정식에 만족하는 특성을 나타내었다. 다이오드 지수는 3 V 이하 영역에서 1.64, 3~5 V 영역에서 0.85이었다. 그리고 5 V 이상 영역에서 공간전하의 제한을 받았으며, 다이오드 지수는 3.36이었다. 한편, 역방향 전류전압 특성은 p-GaN 박막의 두께에 영향을 받았으며, p-GaN 박막의 두께가 150, 300 nm 일 때 각각의 누설 전류는 $1.3{\times}10^{-3}$ mA와 $8.6{\times}10^{-5}$ mA 이었다. 상온에서 측정된 EL 스펙트럼의 주된 발광피크는 430 nm이었고, 반치폭은 49.5 nm이었다.