• The Magazine of the Society of Air-Conditioning and Refrigerating Engineers of Korea
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• v.39 no.2
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• pp.17-23
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• 2010

자동차 내부의 공기정화를 위하여 설치되는 공기청정기술에서 새로운 방식의 클러스터이온 발생장치에 의한 클러스터 음 양이온 공급, 제균, 항균 및 악취제거로 쾌적한 실내환경을 제공할 수 있는 기술에 대하여 소개하고자 한다.

• Journal of the Korean Vacuum Society
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• v.12 no.1
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• pp.55-63
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• 2003

A 150 kV gas cluster ion accelerator was constructed and the cluster sizes of $CO_2$ and $N_2O$ gases were measured using time-of-flight mast spectrometry. Through isolated cluster ion impact on a HOPG, hillock with 1 nm height and a few tenth m in diameter were found to be formed by an atomic force microscope. When monomer ion beams were irradiated on the hillocks existed on a ITO surface, they became sharper and the surface became rougher. But they changed into round-shaped ones by cluster ion irradiation and the surface became smooth after the irradiation of $5\times10^{-14}\textrm{cm}^2$ at 25 kV. As the cluster ion dose was varied, the change of surface morphology and roughness of Si was examined. At the lower dose, the density of hillocks and surface roughness were increased, called surface embossment process. And then after the critical dose at which the area of the formed hillocks equals to the unirradiated area, the sputtering from the hillocks was predominantly evolved, and dislocated atoms were diffused and filled among the valleys, called surface sputtering and smoothing process. At the higher ion dose, the surface consisting of loosely bounded atoms was effectively sputtered into the depth and etching phenomenon was happened, called surface etching process.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.05a
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• pp.39.2-39.2
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• 2007

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.118-126
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• 1998

A study to improve filling of semiconductor contact holes by enhancement of the directionality of the source beams has been undertaken. The collimation of source beams was improved by the ionized cluster beam deposition technique with modification of the cell geometry. The collimation tested with neutral beam was excellent. But, the Cu flims were grown in a columnar mode due to the lack of surface mobilit of the impinged clusters. A shadow effect also caused cleavage and consequent discontinuity at the steos as films grow. By applying acceleration voltage, the columnar growth in a contact hole of 0.5 $\mu$m diameter and 1 $\mu$m height disappeared and considerable coverage at the side wall of the contacts as well as perfect bottom coverage were observed. These are all due to the assistants of the accelerated ionized clusters with high kinetic energy. Thus we demonstrated that the ICB deposition technique can be used to completely fill sub-half-micron contact holes with high aspect ratio.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.04a
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• pp.500-503
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• 2004

본 연구에서는 금속 원자를 단열 팽창시켜 클러스터를 만들고, 생성된 클러스터를 이온화시킨 후 집속렌즈 및 electric quadrupole을 이용하여 기판으로 증착 하였다. 집속렌즈의 설계에서는 단일 초점 방식의 렌즈보다 성능을 높이기 위하여 이중 초점과 핀홀을 써서 집속 효과 및 효율을 높였다. 렌즈의 설계는 일반적으로 하전입자의 에너지 손실 없이 집속할수 있는 Einzel 렌즈를 기본으로 하였으며, SIMION software 를 사용하여 시뮬레이션 하였다. 시뮬레이션 후 실제 렌즈계 및 정전압원을 제작하여 금(Au)의 클러스터를 생성하여 렌즈계를 통과한 후 실제 기판위로 증착이 되는 것을 AFM(Atomic force microscopy)과 XPS(X-ray photoemission spectroscopy)를 이용해 조사하여 렌즈계가 실제로 동작함을 확인하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.05a
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• pp.27-27
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• 2002

• Proceedings of the Korean Vacuum Society Conference
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• 2002.06a
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• pp.180-180
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• 2002

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.23-23
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• 2003

• Proceedings of the Korean Vacuum Society Conference
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• 1992.07a
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• pp.83-83
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• 1992

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.464-464
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• 2007

환경오염으로 인한 각종 질병 및 증후군 등의 발생으로 가정용 산업용에서 환경관련 기술들이 다양한 분야로 확대되고 있다. 본 연구에서는 양이온 및 음이온 양쪽이온을 최대한 발생시키며, 오존 발생량은 억제하고 소비전력을 절감하고자 Ag-Pd 전극을 적용한 세라믹스 클러스터를 개발하였다. Ag-Pd 전극과 매칭되는 세라믹스 조성을 개발한 후 적층공정 기술을 이용하여 후막형 클러스터를 제조하였다. 전극 패턴모양, 전극간 방전간격 및 전극 보호층의 두께에 따른 음이온 발생량을 측정하여 최적화를 위한 실험을 진행하였으며, 음이온 발생량 100만개이상, 오존발생량 0.6ppb인 특성을 확인하였다.