• Korean Journal of Optics and Photonics
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• v.22 no.2
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• pp.67-71
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• 2011

In the paper, we have demonstrated an azobenzene-coated fiber Bragg grating (FBG) for monitoring ultraviolet light (UV) intensity in remote measurement. The elasticity of the coated azobenzene polymer is changed by the UV light, which induces a center wavelength change corresponding to the change of the FBG's grating period. The wavelength shift resulting from both UV light and other light with the wavelength out of the UV range was about 0.18 nm. In order to improve the accuracy of the measurement, the center wavelength shift caused by radiant heat of the light source was sufficiently removed by using a thermal filter. The amount of the center wavelength shift was consequently reduced to 0.06 nm, compared to the result without the thermal filter. Also, the FBGs coated by using azobenzene polymer were produced by two different methods; thermal casting and UV curing. Considering temperature dependence, UV curing is more suitable than thermal casting in UV sensor application of the azobenzene-coated FBG. In addition, we have confirmed the wavelength dependence of the optical sensor by means of four different band pass filters. Thus, we found out that the center wavelength shift per unit intensity is 0.029 [arb. unit] as a maximum value at 370 nm wavelength region and that the absorption spectrum of the azobenzene polymer was very consistent with the wavelength dependence of the azobenzene-coated FBG.

• Journal of the Korean Chemical Society
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• v.24 no.6
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• pp.421-425
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• 1980

The EPR absorption of furan compounds adsorbed on CuY zeolite was studied. With the adsorption of furan on CuY a new high field having a width of 8 gauss and g-factor of 2.002 appeared in EPR spectrum, while the original signal of Cu(Ⅱ) decreased. When 2-methylfuran was adsorbed on Cu(15)Y a new absorption band with a hyperfine structure appeared. With the increase of the degree of Cu(Ⅱ) ion exchange the resolution of the hyperfine structure became poor. The appearance of the new band was interpreted in terms of the formation of a charge transfer complex between Cu(Ⅱ) ion and the furan ring.

• Korean Journal of Materials Research
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• v.7 no.8
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• pp.707-713
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• 1997

HVPE(hydride vapor phase epitaxy)법으로 (111)MgAI$_{2}$ $O_{4}$기판위에 GaN 후막을 성장하였다. GaN를 성장하기 전에 기판에 표면을 GaCI로 처리한 수 성장하였을 때 이중 X선 회절 피크의 반치폭이 710 arcsec로서 N $H_{3}$로 처리한 후 성장한 GaN에 비하여 작았으며, 무색 투명의 경면상태가 얻어\ulcorner다. 113$0^{\circ}C$의 온도에서 성장한 GaN 의 광루미네센스(PL)특성과 동일하게 나타났다. 10K의 온도에서 측정된 PL 스펙트럼은 자유여기자와 속박여기자의 재결합천이에 의한 피크들과 Mg과 관련된 도너-억셉터 쌍 사이의 재결합 및 이의 1LO, 2LO, 3LO 및 4 LO 포논복제에 의한 피크들이 나타났다. 성장된 GaN는 n형의 전도성을나타내었으며, 캐리어 이동도와 농도는 각각 21.3$\textrm{cm}^2$/V ㆍsec와 4.2 x $10^{18}$$cm^{-3}$이었다.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.81-86
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• 2001

We have investigated surface photovoltage characteristics of InGaAs grown by metalorganic chemical vapor deposition (MOCVD) method on semi-insulating GaAs. The splitted SPV signals from the substrate and epilayer were observed. The band gap energy of InGaAs was about 1.376 eV, The In composition(x) was determined by Pan's composition formula. The photovoltage gradually decreases with increasing frequency. This is because the transfer of charge from the surface states reduces. From the temperature dependent SPV measurement, we obtained Varshni and temperature coefficients. In spectrum of etched sample at 300 K, the 'A' peak below $E_o(GaAs)$ is related with residual impurity during sample growth.

• Journal of the Korean Chemical Society
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• v.31 no.6
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• pp.534-541
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• 1987

The study of reaction mechanism for the substitution of ethylenediamine (en) for Cl and Hedta from $[CoCl(Hedta)]^-$ in the presence of $Hg^{2+}$ ion was carried out by uv and CD spectra. From the kinetic data, we proposed that the first ethylenediamine be substituted through the associative reaction path by means of interaction of $Hg^{2+}$ ion with Co(III), and that the second and the third ethylenediamine be substituted stepwise. From the optical purities of $[Co(en)_3]^{3+}$ which was formed after reaction, we suggested the critical stereochemical step and new substitution reaction paths.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.1 no.3
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• pp.111-117
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• 2008

Presentation with a projector and a laser pointer is widely used in seminar or conference. The function of a laser pointer in the presentation is just indicating a certain object. In this paper, to give a mouse-like function to a laser pointer, we implement a system that locates the track of a laser pointer. The system contains a FPGA that implements camera interface and noise filter. A software for ARM processor is programmed to analyze the spectrum of the captured image and track the pattern of a laser pointer with previously stored image. As a result, the tracking system could locate the position correctly most of time within 20m with 98% accuracy.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.226-226
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• 2013

GaN는 III-V족 물질로 밴드갭이 3.4 eV으로 가시광선 영역에서 투명하며 우수한 전기적 특성으로 인해 여러 반도체 분야에서 응용되고 있는 물질이다. GaN 박막의 성장 방법으로는 molecular beam epitaxial 방법과 metal organic chemical vapor deposition 방법이 있지만 고비용인 단점이 있다. 이에 비해 sputtering 방법으로 성장시킨 GaN 박막은 비용이 적게 들고 저온에서 성장이 가능하다는 장점이 있다. 이 연구에서는 radio frequency sputter를 사용하여 GaN 박막을 성장하여 구조적, 광학적 특성을 분석하였다. GaN 박막은 각각 단일층의 그래핀과 c-축 사파이어 기판에 증착 하였으며, 이때 기판온도는 $25^{\circ}C$, $100^{\circ}C$, $200^{\circ}C$로 변화를 주었고, N2 분압은 2 sccm, 5 sccm, 10 sccm으로 변화를 주었다. 그래핀과 사파이어 기판에 성장된 각각의 GaN 박막의 결정성을 투과전자현미경 이미지로 측정하여 비교하였다. $4{\times}10^{-3}$ Torr 진공도와 50 W의 방전 전력과 Ar 10 sccm 분위기에서 20 min 동안 증착된 GaN 박막 두께는 70 nm정도를 가지는 것으로 확인하였다. X-ray Diffraction 측정으로 사파이어 기판 및 (002) 방향으로 성장된 GaN의 피크를 확인하였다. 추가적으로 Photoluminescence 스펙트럼은 N2 분압의 변화와 yellow luminescence 영향을 받는 것을 확인하였다. 본 연구를 통하여, 증착된 기판온도와 N2 분압의 변화에 따른 그래핀 및 사파이어 기판에 증착된 GaN 박막의 특성을 비교하였으며, sputtering 방법으로 고품질의 GaN 박막을 성장시킬 수 있는 가능성을 확인하였다.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.12 no.4
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• pp.251-261
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• 2007

The wind-wave interaction around the Kyung-gi Bay, Korea, was studied using the observed data from ocean buoy at DeuckJeuck-Do from Jan. to Dec., 2005, and from waverider data at KeuckYeulBee-Do on Mar. 19-26 and May 23-28, 2005. Wind-driven surface waves and wave-driven wind speed decrease were estimated from the ocean buoy data, and the characteristics of wave spectrum response were also investigated from the waverider data for the wave developing and calm stages of sea surface, including the time series of spectrum pattern change, frequency trend of the maximum energy level and spectrum slope for the equilibrium state range. The wind speed difference between before and after considering the wave effect was about $2ms^{-1}$ (wind stress ${\sim}0.1Nm^{-2}$) for the wind speed range $5-10ms^{-1}$ and about $3ms^{-1}$ (wind stress ${\sim}0.4Nm^{-2}$) for the wind speed range $10-15ms^{-1}$. Correlation coefficient between wind and wave height was increased from 0.71 to 0.75 after the wave effect considered on the observed wind speed. When surface waves were generated by wind, the initial waves were short waves about 4-5 sec in period and become in gradual longer period waves about 9-10 sec. For the developed wave, the frequency of maximum energy was showed a constant value taking 6-7 hours to reach at the state. The spectrum slope for the equilibrium state range varied with an amplitude in the initial stage of wave developing, however it finally became a constant value 4.11. Linear correlation between the frictional velocity and wave spectrum for each frequency showed a trend of higher correlation coefficient at the frequency of the maximum energy level. In average, the correlation coefficients were 0.80 and 0.82 for the frequencies 0.30 Hz and 0.35 Hz, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.6
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• pp.244-252
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• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $_CuInSe2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62\times10^{16}/\textrm{cm}^3$, 296 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 1.1851 eV -($8.99\times10^{-4} eV/K)T^2$(T + 153 K). The crystal field and the spin-orbit splitting energies for the valence band of the CuInSe$_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the $\Gamma$6 states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-, B_1$-와 $C_1$-exciton peaks for n = 1.

• Journal of Korean Tunnelling and Underground Space Association
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• v.9 no.4
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• pp.403-413
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• 2007

As rock bolts become one of the main support systems in tunnels and underground structures, the integrity of the rock bolts affects the safety of these types of structures. The purpose of this study is the evaluation of rock bolt integrity using Fourier and wavelet transforms of the guided ultrasonic waves. After five rock bolt specimens with various defect ratios are embedded into a large scale concrete block, guided waves are generated by a PZT (lead zirconate titanate) element and measured by an acoustic emission (AE) sensor. The captured signals are analyzed in the frequency domain using the Fourier transform, and in the time-frequency domain using the wavelet transform based on a Gabor wavelet. The spectrum obtained from the Fourier transform shows that a portion of high frequency contents increases with increase in the defect ratio. Peak values in the time-frequency domain represent the interval of travel time of each echo. The energy velocities of the guided waves increase with the defect ratio. This study shows that the spectrum ratio and the energy velocity may be indicators fur the evaluation of rock bolt integrity.