• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.2
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• pp.600-604
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• 2011

In this paper, the scintillation properties of $LaCl_3:Eu^{2+}$ crystal were investigated as new scintillator. This scintillation material was grown by a Czochralski method. $LaCl_3:Eu^{2+}$ was determined to have a hexagonal $P_63$/m space group with cell parameters a = b = $7.48{\AA}$, c = $4.37{\AA}$. Under 335 nm UV excitation, the crystal shows a broad emission band between 370 nm and 640 nm wavelength range, peaking at 430 nm. At room temperature, the crystal exhibits one exponential decay time component. The component of scintillation time profile of the crystal emission decays with a $2.82{\pm}0.72{\mu}s$ time constant. The energy resolution of the crystal was measured to be 8.8% (FWHM) for $^{137}Cs$ 662 keV ${\gamma}$-rays.

• Journal of Sensor Science and Technology
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• v.1 no.1
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• pp.53-57
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• 1992

We report the crystal growth and the electro-optic characteristics of $CdS_{1-x}Se_{x}$ thin films. $CdS_{1-x}Se_{x}$ thin films wire deposited on the alumina plate by electron beam evaporation technique in pressure of $1.5{\times}10^{-7}$ torr, voltage of 4kV, current of 2.5mA and substrate temperature of $300^{\circ}C$. The deposited $CdS_{1-x}Se_{x}$ thin films were proved to be a polycrystal with hexagonal structure through X-ray diffraction patterns. $CdS_{1-x}Se_{x}$ photoconductive films showed high photoconductivity after annealing at $550^{\circ}C$ for 30 minutes. And the films have been investigated the Hall effect, photocurrent spectra, sensitivity, maximum allowable power dissipation and response time.

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.384-389
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• 2009

ZnO, a wurtzite lattice structure, has attracted much attention as a promising material for light-emitting diodes (LEDs) due to highly efficient UV emission resulting from its large band gap of 3.37 eV, large exciton binding energy of 60 meV, and low power threshold for optical pumping at room temperature. For the realization of LEDs, both n-type ZnO and p-type ZnO are required. Now, n-type ZnO for practical applications is available; however, p-type ZnO still has many drawbacks. In this study, ZnO films were grown on glass substrates by using atomic layer deposition (ALD) and the ZnO films were irradiated by nitrogen ion beams (20 keV, $10^{13}{\sim}10^{15}ions/cm^2$). The effects of nitrogen-beam irradiation on the ZnO structure as well as the electrical property were investigated by using fieldemission scanning electron microscopy (FESEM) and Hall-effect measurement.

• Applied Chemistry for Engineering
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• v.17 no.3
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• pp.274-279
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• 2006

To synthesize ZnO colloidal solution by a sol-gel process, zinc acetate ($C_{4}H_{6}O_{4}Zn{\cdot}2H_{2}O{\cdot}0.2\;mol$) and lithium hydroxide ($LiOH{\cdot}H_{2}O{\cdot}0.14\;mol$) in the ethanol were added to the solution containing a dispersing agent, hydroxypropyl cellulose (HPC). The nanosize and physical shape of the synthesized ZnO particles were determined by HPC acting as the dispersing agent. Nanosized ZnO particles were also obtained by a precipitation method based on zinc-2-ethylhexagonate. The precipitates were characterized by DLS, XRD, FE-SEM, and UV-vis. As the results, the ZnO colloids tend to self-assemble into a well-ordered hexagonal close-packed structure. The ZnO nanoparticles have an average diameter of nearly 40 nm with a narrow size distribution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.166-166
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• 2007

ZnO는 육방정계(wurtzite) 결정구조를 지니며 상온에서 3.37eV의 wide band gap을 갖는다. ZnO의 엑시톤 결합 에너지는 GaN에 비해 2.5배 높은 60meV로서 고효율의 광소자 적용 가능성이 높다. 또한 고품위의 박막합성이 가능하다. 이러한 특성 때문에 display소자의 투명전극, 광전소자, 바리스터, 압전소자, 가스센서 등에 폭 넓게 응용되고 있다. ZnO박막의 제조는 스퍼터링, CVD, 진공증착법, 열분해법 등이 있다. 본 논문에서는 RF 마그네트론 스퍼터에 의해 제작된 ZnO 박막에 CMP공정을 수행하여 연마율과 비균일도 특성 및 광투과 특성을 연구하였다. ZnO박막은 $2{\times}2Cm$의 Corning glass위에 증착되었다. 로터리 펌프와 유확산 펌프를 이용하여 초기진공을 $2{\times}10^{-6}$ Torr까지 도달시킨 후 Ar과 $O_2$를 주입하였다. 증착은 상온에서 이루어졌으며 공정압력은 $6{\times}10^{-2}$Torr이였다. 초기의 불안정한 상태의 풀라즈마를 안정시키기 위해 셔터를 이용하여 pre-sputtering을 하였다. CMP 공정조건은 플레이튼 속도, 슬러리 유속, 압력은 칵각 60rpm, 90ml/min, $300g/cm^2$으로 일정하게 유지하였으며 헤드속도는 20rpm에서 100rpm까지 증가시키면서 연마특성을 조사하였다. 실리카슬러리의 적합성을 알아보기 위해 DIW와 병행하여 CMP공정을 수행하고 비교 분석하였다. CMP공정 결과 광투과도는 굉탄화된 표면의 확보로 인해 향상된 특성을 보였다. 실리카 슬러리를 사용하여 CMP를 할 경우는 헤드속도는 저속으로 하여야 양호한 연마특성을 얻을 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.89-89
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• 2000

AlN 박막은 Al과 N원자의 부분적 이온결합 특성을 가진 공유결합을 한 육방정계의 wurtzite 경정구조의 화합물 반도체로서, III-V족 반도체 중 가장 큰 에너지 갭(6.2 eV), 결정 구조적 이방성, 화학 양론적 결합구조, 높은 탄성종과 전달속도(약 10$\times$106 m/s)와 높은 열전도도, 고온 안정성, 가시광성.적외선 영역에서의 좋은 투과성과 높은 굴절률, 상온 대기압에서의 유일하게 안정적인 특성을 가지고 있어, 절연재료, 내열재료, 저주파 영역 센서의 압전 트랜스듀서, 광전소자, 탄성파 소자 및 내환경 소자, MIS소자 등으로 주목받고 있다. 본 연구에서는 BAW 공진기의 활용을 목적으로 반응성 마그네트론 스퍼터링 방법으로 AIN 압전박막을 제작하여, 증착 조건-질소 농도, 고주파 출력, 전체 스퍼터링 압력, 기판 온도-에 대한 박막의 특성을 조사하였다. AlN 박막의 c축 우선 방위 결정성 및 낮은 투과성, 적당한 굴절률의 특성이 BAW 공진기의 활용을 위한 요건이므로, 각각의 증착 조건하에 제작된 박막은 XRD의 $\theta$/2$\theta$ 스캔 회절상에 의한 결정성의 분석과 우선 성장 결정면의 rocking curve 및 XRD로 측정한 FWHM과 표준 편차로 결정성의 배열성과 소자 응용가능성을 조사하였다. 박막의 표면.단면 미세 구조 및 평활도는 SEM으로 관찰하였으며, Al-N 결합 상태는 XPS와 FT-IR로 분석 조사하였다. 제작된 AlN 박막의 결정성 분석 결과, c축 우선 방위 성장을 위한 스퍼터링 압력에 대한 임계 질소 농도와 임계 스퍼터링 압력이 관찰되었다. 전체 스퍼터링 압력이 6~8 mTorr의 범위에서 나타난 최소 임계질소 농도는 10%, 최대 임계 질소 농도는 60%이며, 4 m Torr 이하 10 m Torr 이상의 전체 스퍼터링 압력에서 박막의 우선 방위성장이 제재된다. 이는 AlN 박막이 형성에 관여하는 질소 이온 양의 충분한 형성에 필요로 하는 질소 가스의 유입량에 따른 것으로 판단된다. AlN 박막의 c축 결정면인 (002) 결정면의 성장을 유도하며 다른 방향으로의 성장을 제어하여 소자 활용에 유용한 박막을 제작하기 위한 고주파 출력은 300W 정도가 적당하며, 기판을 가열하지 않았을 때 낮은 투과도를 나타낸다. 본 연구에 의한 BAW 공진기 활용을 위한 AlN 압전박막의 제작을 위한 최적 증착 조건은 기판의 가열 없이 6~8 mTorr의 전체 스퍼터링 압력에 20~25%의 질소종도, 300W의 고주파 출력이다. 최적 조건에서의 AlN 박막은 약 0.19$^{\circ}$의 FWHM과 약 0.08$^{\circ}$의 표준편차를 가지며, 균일하고 조밀한 표면 미세구조와 주상정 구조의 측면구조, 파장에 대한 약 2.0의 굴절률, 낮은 투과도와 화학 양론적 구조를 가지는 우수한 박막이 형성되었다.

• Journal of the Korean Magnetics Society
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• v.4 no.3
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• pp.226-232
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• 1994

Rapidly solidified $SmFe_{7+x}M_{x}(M=Mo,\;V,\;Ti)$ compound were found to crystallize in the ${Sm(Fe,\;M)}_{7}$ based stable magnetic phase by introducing a second transition element into the Sm-Fe binary system. The ${Sm(Fe,\;M)}_{7}$ phase exhibits the highest Curie temperatuer ($T_{c}=355^{\circ}C$) ever Known in the Sm-Fe magnetic systems with a quite high intrinsic coercivity($_{i}H_{c}=3~6\;kOe $). The ${Sm(Fe,\;M)}_{7}$ phase remains stable even after annealing if once form during the rapid solidification. The primary reason for the high coercive force is due to the fine grain size($2000~8000\;{\AA}$)of the magnetic ${Sm(Fe,\;M)}_{7}$ matrix phase, and the enhanced Curie temperature is attributed to the extended solid-solubility of the additive transition elements in Fe matrix, which leads to volume expansion of the ${Sm(Fe,\;M)}_{7}$ cell causing an enhanced coupling constant of Fe atoms.

• Korean Journal of Mineralogy and Petrology
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• v.33 no.1
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• pp.19-28
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• 2020

Ranciéte is a hexagonal phyllomanganate mineral containing random Mn(IV) vacancies with hydrated Ca²⁺ cations charged balanced as interlayer cations. Its Mn²⁺ analogue is called takanelite, and ranciéite and takanelite are regarded as end-members of a solid solution series of (Ca²⁺,Mn²⁺)Mn₄O₉·nH₂O. Because the minerals are found as very small particles associated with other minerals, the crystal structures of the solid solution series have yet to be defined. In this research, we conducted classical molecular dynamics (MD) simulations of ranciéite and takanelite by varying the Mn²⁺/Ca²⁺ interlayer cation ratio to find relations between the interlayer cations and mineral structures. MD simulation results of chalcophanite group minerals are compared with experimental results to verify our method applied. Then, lattice parameters of ranciéite and takanelite models are presented along with detailed interlayer structures as to the distribution and coordination of cations and water molecules. This study shows the potentials of MD simulations in entangling complicated phyllomanganates structures.

• Journal of the Korean Electrochemical Society
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• v.13 no.4
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• pp.264-269
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• 2010

$LiNi_{0.5}Mn_{0.3}Co_{0.2}O_2$ active material was prepared by simple-combustion method and investigated as the cathode material for li-ion battery. The structural characterization was analyzed by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM), respectively. The XRD patterns of $LiNi_{0.5}Mn_{0.3}Co_{0.2}O_2$ sample was indicated a phase of layered hexagonal structure. The size of particles has not uniform diameters ranging from 100 to 300 nm. The electrochemical performance of the $LiNi_{0.5}Mn_{0.3}Co_{0.2}O_2$ was measured by Cyclic Voltammetry and galvanostatics. The $LiNi_{0.5}Mn_{0.3}Co_{0.2}O_2$ shows the discharge capacity of ~162 mAh/g in the range of 2.8 to 4.3 V at the first cycle.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.50-56
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• 2011

In this study, the effects of ZnO buffer layer thickness and annealing temperature on the heterojunction diode, ZnO/b-ZnO/p-Si(111), were reported. The effects of those on the structural and electrical properties of zinc oxide (ZnO) films on ZnO buffered p-Si (111) substrate were also studied. Structural properties of ZnO thin films were studied by X-ray diffraction and I-V characteristics were measured by a semiconductor parameter analyzer. ZnO thin films with 70 nm thick buffer layer and annealing temperature of $700^{\circ}C$ showed the best c-axis preferred orientation. The best electrical property was found at the condition of buffer layer annealing temperature of $700^{\circ}C$ and 50nm thick ZnO buffer layer (resistivity: $2.58{\times}10^{-4}[{\Omega}-cm]$, carrier concentration: $1.16{\times}1020[cm^{-3}]$). The I-V characteristics for ZnO/b-ZnO/p-Si(111) heterojunction diode were improved with increasing buffer layer thickness at buffer layer annealing temperature of $700^{\circ}C$.