• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.4
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• pp.327-332
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• 2009

In the devices structure of ITO/N,N'-diphenyl-N,N' bis (3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) /tris (8-hydroxyquinoline)aluminum$(Alq_3)$electron-transport-layer(ETL)(2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline(BCP))/Al, we have studied the efficiency improvement of organic light-emitting diodes depending on the thickness variation of BCP using electron transport layer. The thickness of TPD and $Alq_3$ was manufactured 40 nm, 60 nm under a base pressure of $5{\times}10^{-6}$ Torr using at thermal evaporation, respectively. The TPD and $Alq_3$ layer were evaporated to be deposition rate of $2.5{\AA}/s$. And the BCP was evaporated to be a4 a deposition of $1.0{\AA}/s$. As the experimental results, we found that the luminous efficiency and the external quantum efficiency of the device is superior to others when thickness of BCP is 5 nm. Also, operating voltage is lowest. Compared to the ones from the devices without BCP layer, the luminous efficiency and the external quantum efficiency were improved by a factor of four hundred ninty and five hundred, respectively. And operating voltage is reduced to about 2 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.153-153
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• 2008

최근 투명전극물질이 LCD, 박막태양전지, smart window, 유기발광소자 등에 폭넓게 이용됨에 따라 그 수요가 급격이 늘어나고 있다. 이러한 투명전극 물질로는 Al : ZnO, Ga : ZnO, $MgIn_2O_4$, $AgSbO_3$, $InGaZnO_4$, ITO, Zn:ITO 등이 있으며 이중 ITO 계 산화물은 우수한 전기적 특성을 바탕으로 이미 상용화 되어있는 상태이다. 그러나 ITO 계 산화물은 indium 의 희소성과 높은 가격 때문에 폭 넓은 분야의 상용화가 어려운 실정이며, 수소 플라즈마 분위기에 화학적으로 불안정한 특성은 Si 박막태양전지 응용에 큰 문제가 되고 있다. 이에 본 연구는 박막태양전지용 ITO 계 투명전극의 indium양을 줄이면서 화학적으로 안정하고, 전기적 특성이 향상된 박막을 제조하기 위해 combinatorial sputter를 이용하여 Zn의 도핑량을 연속적으로 변화시킨 ITO 박막을 제조하였다. 또한 광학적 전기적 특성의 향상을 위해 vacuum, $H_2$, $O_2$ 분위기에서 열처리 후 각 박막의 특성 변화를 관찰하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.298-299
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• 2008

Images of deposited layers of organic light-emitting diodes were observed by scanning-electron microscope (SEM). We were able to see a clear cross-sectional view of deposited layers. The SEM is a type of electron microscope that images the sample surface by scanning it with a high-energy beam of electrons in a raster scan pattern. A thickness of deposited layer measured by thickness monitor is close to a real value measured by a-step surface profiler within 5%. We were able to see a formation of domains of size about 50-100nm from a surface morphology of Al, and pin holes of size about 50nm.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.5
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• pp.918-921
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• 2010

We have proposed an dielectric layer to improve the luminance of red organic light emitting device. Here, we have calculated refractive index of dielectric layer material that was revised refractive index of organic material, ITO and glass. Refractive index of dielectric layer material was 1.711. The structure of dielectric layer was designed in organic material/ITO/dielectric layer/glass. Dielectric material changed thickness that deposited by ion-assisted deposition system. Transmittances of ITO were 95.66-98.85 [%]. Red OLED was fabricated with the structure of TPD($400[{\AA}]$)/DCMII($20[{\AA}]$), Rubrene($20[{\AA}]$)/Alq3($500[{\AA}]$)/LiF($15[{\AA}]$)/Al($1,000[{\AA}]$). Turn-on voltage and Luminance of Red OLED were 10 [V] and 5,857 cd/m2.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.293-294
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• 2005

We have investigated dielectric properties depending on frequency in organic light -emitting diodes using 8-hydroxyquinoline aluminum ($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric properties of organic light-emitting diodes using impedance of characteristics. impedance characteristics was measured complex impedance Z and phase $\Theta$ in the frequency range of 40 Hz to $10^8$ Hz. We obtained complex electrical conductivity, dielectric constant, and loss tangent (tan$\delta$) of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1609-1611
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• 2002

Multi-layer organic electroluminescent(EL) devices with Al-CsF composite as a cathode were fabricated. This device privides low driving voltage and high quantum efficiency. CsF is evaporated onto and diffuse into electron transport layer. $Alq_3$. The Fermi level of $Alq_3$ moves towards the LUMO level.

• Journal of the Korean Applied Science and Technology
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• v.20 no.4
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• pp.316-323
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• 2003

Zinc complexes with bis[2-(o-hydroxyphenyl) naphtol [1,2] oxazolato ligands (ZnPBO-4) and its derivatives (ZnPBO-S) were synthesized, and luminescent properties of these materials were investigated. Both the fluorescent emission band and electroluminescent emission band were discussed based on their ligand structure differences. The emission band found that it strongly depends on the molecular structure of introduced ligand. It was tuned from 446 nm to 491 nm by changing the ligand structures. Spreading of the ${\pi}$-conjugation in 2-(o-hydroxyphenyl) group gives rise to a blue shift. The EL properties also showed good consistency with their differences of ligand structure. Bright-blue EL emission with a maximum luminance of 3,100 $cd/m^2$ at 12V, current density, 575 $mA/m^2$ was obtained from the organic light-emitting diodes (OLEDs) using ZnPBO-4 as emitting layer. It was also found that the newly synthesized materials were suitable to be used as emitting materials in organic EL device.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.255-255
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• 2011

$SiO_2$는 유전체 물질로서 고온에 강하고 열 변화에 민감하지 않으며 자외선을 잘 투과시키는 특성 때문에 각종 광전자 소자에 많이 응용되고 있다. 최근에는 classical thermal oxidation 방식을 이용하여 태양전지의 효율을 증가하기 위한 표면 보호막, 유기발광다이오드의 보호막 및 barrier로 적용되고 있다. $SiO_2$ 박막의 경우 RF-DC sputtering, thermal evaporation, plasma enhanced chemical vapor deposition, E-beam evaporation 등의 다양한 방법을 통하여 제작되고 있다. 이들 중 E-beam evaporation 법은 높은 증착속도, 증착방향성, 낮은 불순물농도 등 많은 장점을 가지고 $SiO_2$ 박막 증착이 가증하다. 따라서 본 연구에서는 Si 기판위에 $SiO_2$를 증착각도를 0$^{\circ}$, 25$^{\circ}$, 50$^{\circ}$, 70$^{\circ}$로 변화시켜 증착하였고, 증착속도, 빔 세기, 기판 회전속도 등을 변화시켰다. 또한, 증착 각도에 따른 유전율 차이를 무반사 특성 향상에 응용하기 위해 다양한 layer 층을 순차적으로 성장시켰다. 제작된 $SiO_2$의 나노구조의 구조적, 광학적 특성은 field emission scanning microscopy, atomic force microscopy, UV-VIS-NIS spectrophotometer를 이용하여 분석되었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.11
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• pp.1037-1043
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• 2006

We report the enhancement of hole injection using ozone-treated Ag nanodots dispersed on indium tin oxide anode in $Ir(ppy)_3-doped$ phosphorescent OLED. Phosphorescent OLED fabricated on Ag nanodots dispersed ITO anode showed a lower turn on voltage and higher luminescence than those of OLEDS prepared commercial ITO anode. Synchrotron x-ray scattering examination results showed that the Ag nanodots dispersed on ITO anode is amorphous structure due to low deposition temperature. It was thought that decrease of the energy barrier height as Ag nanodots changed to $AgO_x$ nanodots by surface treatment using ozone for 10 min led to enhancement of hole injection in phosphorescent OLED. Futhermore, efficient hole injection can be explained by increase of contact region between anode material and organic material through introduction of $Ag_2O$ nanodots.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.11
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• pp.1044-1049
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• 2006

We reported on characteristics of the fluorescent OLED fabricated on commercial ITO/glass and BCS grown IZO/glass substrate, respectively. The amorphous IZO anode film grown by box cathode sputtering(BCS) exhibited similar electrical and optical characteristics to commercial ITO anode even though it was deposited at room temperature. In addition, the amorphous IZO anode showed higher workfunction (5.2 eV) than that of the commercial ITO anode (5.0 eV) after ozone treatment for 10 min. Furthermore, fluorescent OLED fabricated on amorphous IZO anode film showed improved current-voltage-luminance characteristics, external quantum efficiency and power efficiency en contrast with fluorescent OLED fabricated on commercial ITO anode film. It was thought that smooth surface and high workfunction of amorphous IZO anode lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers.