• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.151-154
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• 1999

ZnO thin films on glass substrate were deposited by RF magnetron reactive sputter with various argodoxygen gas ratios and substrate temperatures. Crystallinities, surface morphologies, chemical compositions, and electrical properties of the films were investigated by XRD, SEM, XPS and electrometer(keith1ey 617). All films showed a strong prefered orientation along the c-axis on glass substrate, and the chemical stoichiometry was obtained at Ar/$O_2$=50/50. The propagation velocity of ZnO SAW filter was about 2, 590 dsec and insertion loss was a minimum value of about -21dB.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.59-59
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• 2010

ZnO는 II-VI 족 화합물 반도체로써 상온에서 큰 엑시톤 결합에너지 (~60 meV) 를 가지며 밴드갭이 3.37 eV인 직접 천이형 반도체로 잘 알려진 물질이다. 이러한 ZnO의 물리적 특성은 광학소자로 상용화된 GaN와 유사하기 때문에 LED나 LD등의 광 소자 재료로 주목 받고 있다. 또한 ZnO는 3족 원소 (In, Ga, Al)를 도핑 함으로써 전기적 특성 제어가 가능한 장점을 가지고 있다. 본 연구는 펄스레이저 증착법 (Pulsed Laser Deposition)을 이용하여 Si (111) 기판 위에 ZnO:In 박막을 성장 시켰으며, 도핑된 indium 양에 따른 ZnO 박막의 배향성 변화를 관찰 하였다. X-선 회절 분석법 (X-ray diffraction), 탐침형 원자현미경 (Atomic Force Microscope) 그리고 투과전자 현미경 (Transmission Electron Microscope)을 측정하였다. XRD 측정 결과 un-doped ZnO 박막은 (002) 방향으로 c-축 우선성장 하였다. 그러나 ZnO 박막내의 Indium 양이 증가 할수록 (002) 방향에서 (101), (102), (103) 등의 (101) 방향으로 성장이 변화 하였으며 5 at.% 이상에서는 (100) 방향의 성장이 관찰 되었다. TEM 측정 결과 un-doped ZnO 박막은 columnar 구조로 성장 되었으나, Indium 양이 증가할수록 column의 size가 감소하며, 5 at.% 이상에서 columnar 구조 성장이 거의 관찰되지 않는다. AFM 결과에서는 Indium 양이 증가 할수록 박막의 표면거칠기와 결정립 크기가 감소하였다.

• Journal of the Korean Vacuum Society
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• v.19 no.6
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• pp.475-482
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• 2010

Polycrystalline NiO thin films were deposited on glass substrate by RF magnetron sputtering using only Ar as a plasma sputter gas. based on the analysis of x-ray diffraction (XRD), NiO films had a polycrystalline cubic (NaCl type) structure. NiO thin films grown below and above $200^{\circ}C$ showed preferred orientation of (111) and (220) respectively. It showed colossal change in electrical resistivity as much a ${\sim}10^7$ order form an insulating state of $105\;{\Omega}cm$ below $200^{\circ}C$ to a conducting state of $10^{-2}{\sim}10^{-1}\;{\Omega}cm$ above $300^{\circ}C$ such a Mott metal-insulator transition (MIT) in polycrystalline.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.230-230
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• 2011

RF magnetron sputtering을 이용하여 Ar 및 $O_2$유량에 따라 GZO 박막을 유리기판 위에 제작하고 구조적, 광학적, 전기적 특성을 조사하였다. 박막 증착 조건의 초기 압력은 $1.0{\times}10^{-6}$ Torr, RF 파워는 25W, 증착온도는 상온으로 고정하였으며 기판은 Corning 1737 유리 기판을 사용하였다. 공정 변수로 Ar 유량을 40 sccm, 60 sccm, 80 sccm, 100 sccm으로 변화시켰으며, $O_2$ 가스비율을 5~20%으로 변화를 주어 실험을 진행하였다. GZO 타겟은 ZnO,Ga 분말을 각각 97:3 wt.%로 소결된 타겟을 사용하였다. 유리기판 위에 증착된 모든 GZO 박막에서 (002) 면의 우선 배향성이 관찰되었고 평균 85% 이상의 투과율을 나타내었다. 산소유량이 포함되지 않고 Ar 유량이 적은 GZO 박막의 결정성은 향상되었고, 광학적 밴드갭은 증가하였다. Hall 측정 결과 산소의 유량이 포함되어 있는 박막에서는 모두 완전한 산화물에 가까운 화학양론적 조성으로 면저항이 $10^6{\Omega}/{\Box}$ 이상인 부도체 특성을 보였으며, 산소가 포함되지 않은 샘플에서는 투명전도막 특성이 확인되었다. 산소가 포함되지 않은 Ar 유량이 60 sccm일 때 전기비저항 $3.25{\times}10^{-3}{\Omega}cm$, 전하의 농도 $9.41{\times}10^{20}\;cm^{-3}$, 이동도 2.04 $cm^2V^{-1}s^{-1}$로 투명전도막으로 적합한 전기적 특성을 얻었다. GZO 박막의 경우 산소가 포함될 경우 결정성이 저하되고, 절연특성을 갖는 것을 확인할 수 있었다.

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.547-552
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• 2003

ZnO thin films on glass substrate were deposited by RF magnetron reactive sputtering at 100 W, 1.33 Pa, Ar/O2=50 : 50, 200$^{\circ}C$, and a target/substrate distance of 4 cm. Crystallinities, surface morphologies, chemical compositions, and electrical properties of the films were investigated by XRD, SEM, AFM, RBS, and electrometer. All films showed a strong preferred c-axis orientation and the chemical stoichiometry. The propagation velocity of ZnO/IDT/glass of single electrode and double electrode types SAW filter was about 2,589 m/sec, 2,533 m/sec and insertion loss was a minimum value of about -11 dB and -21 dB, respectively.

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.141-145
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• 2011

ZnO:Al thin films were deposited by RF magnetron sputtering with various base pressure, and their structural, optical, and electrical properties were studied. The influence of the base pressure on the ZnO:Al thin film was confirmed and a high-quality thin film was obtained by controlling the base pressure. In all Al-doped ZnO thin films, the preferred orientation of (002) plane was observed and light transmittance in visible region (400 nm~800 nm) had above 85%. With decreasing of base pressure, crystallinity, resistivity, and figure of merit were improved. The improvement of resistivity with base pressure was attributed to the change of grain size.

• Journal of the Korean Ceramic Society
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• v.36 no.9
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• pp.937-945
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• 1999

In an effort to protect a RBSC(reaction -bonded SiC) tube SiC films from methyltrichlorosilane(MTS) by low pressure chemical vapor deposition were deposited in hydrogen atmosphere on the RBSC(reaction-bonded SiC) substrates over a range of input gas ratio(${\alpha}=P_{H2}/P_{MTS}=Q_{H2}/Q_{MTS}$=1 to 10) and deposition temperatures(T=1050~1300$^{\circ}C$). At the temper-ature of 1250$^{\circ}C$ the growth rate of SiC films increased and then decreased with decreasing the input gas ratio. The microstructure of SiC films was changed from granular type structure exhibiting (111) preferred orientation in the high input gas ratios to faceted columnar grain structure showing (220) in the low input gas ratios. The similar microstructure change was obtained by increasing the deposition temperature. These results were closely related to a change of deposition mechanism. Double layer structure having granular type and faceted ciolumnar grain structure from the manipulation of mechanism. Double layer structure having granular type and faceted columnar grain structure from the manipulation of the input gas ratio without changing the deposition temperatue was successfully fabricated through in -site process.

• Journal of the Korean Vacuum Society
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• v.13 no.2
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• pp.72-78
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• 2004

Cu seed layers deposited by magnetron sputtering onto tantalum nitride barrier films were treated with ECR plasma and then the copper films were electroplated and rapid thermal annealed in an argon or nitrogen atmosphere at various temperatures ranging from 200 to $500^{\circ}C$. Changes in the microstructure and physical properties of the copper films electroplated on the hydrogen ECR plasma cleaned copper seed layers were investigated using X-ray diffraction (XRD), electron back-scattered diffraction (EBSD), and atomic force microscopy (AFM) analyses. It was found that the copper film undergoes complete recrystallization during annealing at a temperature higher than $400^{\circ}C$. The resistivity of the Cu film tends to decrease and the degree of (111) preferred orientation tends to increase as the annealing temperature increases. Theoptimum annealing condition for obtaining the film with the lowest resistivity, the smoothest surface and the highest degree of the (111) preferred orientation is rapid thermal annealing in a nitrogen atmosphere at $400^{\circ}C$ for 120 s. The resistivity and the surface roughness of the electroplated copper film annealed under this condition are 1.98 $\mu$O-cm and 17.77 nm, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.2
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• pp.255-262
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• 2003

In this paper, an investigation on the ZnO film deposition using radio-frequency magnetic sputtering techniques on aluminum bottom electrode for film bulk acoustic wave resonator (FBAR) filter applications and the temperature effects on the ZnO film growth is presented. The investigation on how much impact the actual process temperature may have on the crystal growth is more meaningful if it is considered that the piezoelectricity property of ZnO films plays a dominant role in determining the resonance characteristics of FBAR devices and the piezoelectricity is determined by the degree of the c-axis preferred orientation of the deposited ZnO films. In this experiment, it was found that the growth of ZnO crystals has a strong dependence on the deposition temperature ranged from room temperature to $350^{\circ}C$ regardless of the RF powers applied and there exist 3 temperature regions divided by 2 critical temperatures according to the degree of the c-axis preferred orientation. Overall, below $200^{\circ}C$, ZnO deposition results in columnar grains with a highly preferred c-axis orientation. With this ZnO film, a multilayered FBAR structure could be realized successfully.

• Ceramist
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• v.1 no.1
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• pp.28-36
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• 1998

세라믹 분발의 분산안정성은 입자의 입경 및 형상, 배열형태, 그리고 분산기구에 따라 크게 달라진다. 대체로 입경이 콜로이드 범위내에 존재하면 일반적인 정전반발력이나 입체반발력에 의하여 분산이 가능하지만, 콜로이드 범위를 넘는 조대한 입경을 가지는 분말에서는 진정한 분산안정성을 얻는 것은 불가능하다. 비록 콜로이드 범위에 속히는 입경을 가지더라도 Hamaker 상수가 매우 높거나 기하이방성을 가진 입자가 우선배향성을 가지는 경우에도 마찬가지의 결과를 보여 준다. 진정한 의미의 분산안정성을 얻을 수 없는 경우 입자 간 포텐셜 에너지의 절대값이 최소가 되도록 함과 더불어 고분자 흡착층이나 전기이중층의 두께를 조정하여 입지간 평형거리를 조정하여 후속공정에서의 균일성을 유지하는 것이 기능하다. 이와 같은 제한응집은 진정한 의미의 분산안정성을 얻을 수 없는 분말을 구성분말로 하는 단미는 물론 복합재료에서도 활용이 가능하다. 나노 크기의 입경을 가지는 분말에서는 반데르발스 인력은 상대적으로 작지만, 정전반발력도 동시에 작아지기 때문에 에너지 장벽의 높이가 충분하지 않은 경향을 보인다. 따라서, 나노 분말의 분산안정성은 흡착층의 두께가 크지 않는 저분자량의 고분자를 흡착시켜 입체반발력을 부여하는 것이 바람직하다.