• Electrical & Electronic Materials
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• v.4 no.4
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• pp.304-311
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• 1991

본 연구에서는 p형(100) 실리콘 기판 위에 LPCVD법으로 산화막과 다결정 실리콘을 증착하고 그 위에 Magnetron Sputtering법으로 티타늄을 500.angs.을 증착한 후, 열처리 온도 500-900.deg.C 사이에서 열처리 시간을 변화시키면서 N$_{2}$ 분위기 속에서 급속 열처리하여 티타늄 실리사이드를 형성하고 그 특성을 조사하였다. 500-600.deg.C 온도 범위에서 10초간 열처리한 시료에서는 실리사이드상은 나타나지 않고, 산소등의 불순물이 티타늄 박막 내로 확산되어 600.deg.C에서 면 저항이 최대값을 보였으며 열처리 온도는 675-750.deg.C로 높이자 TiSi상이 나타나면서 면저항이 감소되고 결정립의 크기가 크게 증가하였다. 또한 열처리온도 800.deg.C에서 나타나기 시작한 TiSi$_{2}$상은 열처리 온도 850.deg.C까지 TiSi상과 공존하면서 면저항과 reflectance는 계속 감소했다. 900.deg.C에서 10초간 열처리한 시료에서는 orthorhombic구조의 완전한 실리사이드 상만 나타났다. 최종적인 티타늄 실리사이드 박막의 두께는 1200.angs.이며 비저항은 18.mu..OMEGA.cm였다.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1957-1959
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• 2005

표면이 도핑된 SOI RESURF LDMOSFET에 대해 표면 도핑의 깊이에 따른 항복전압 및 순방향 특성을 분석하였다. 표면 도핑영역의 깊이를 $0.5{\sim}2.0{\mu}m$까지 변화시켜가며 항복전압의 변화와 온-저항의 변화를 시뮬레이션 하였다. 표면 도핑영역의 깊이에 따라 항복전압은 $73V{\sim}138V$까지 변화하였으며, 온-저항도 $0.18{\sim}0.143{\Omega}/cm^2$까지 변화하였다. 항복전압은 표면 도핑 영역의 깊이가 $1.5{\mu}m$때 138V로 가장 높게 나타났으며, 동일한 에피 영역의 농도를 사용한 기존의 소자와 비교하였을 때 약 22.1%의 항복전압의 증가를 나타냈으며, 온-저항값은 약 21.8%정도 감소하였다.

• Journal of Sensor Science and Technology
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• v.5 no.3
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• pp.17-24
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• 1996

In order to reduce the offset and its temperature drift by the different properties of the piezoresistors and the residual stress of the piezoresistive pressure sensor, a double Wheatstone-bridge pressure sensor was studied. Because the compensation bridge was arranged near by the pressure sensitive bridge, which have the similar offset component, reduction of the offset and its temperature drift was realized by the mathematical subtraction of the output of two bridges. It was configured the compensation of the offset and its temperature drift. By this compensation method, the offset and its temperature drift were reduced approximately 95% respectively. The sensitivity of the fabricated pressure sensor was $11.7\;mV/Vkg/cm^{-2}$ for $0.9\;kgfcm^{-2}$ full-scale pressure range.

• Composites Research
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• v.36 no.5
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• pp.342-348
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• 2023

There has been increasing demand for real-time monitoring of body and ambient temperatures using wearable devices. Graphene-based thermistors have been developed for high-performance flexible temperature sensors. In this study, the temperature coefficient of resistance (TCR) of monolayer graphene was controlled by coating polyethylenimine (PEI) on graphene surfaces to enhance its temperature-sensing performances. Monolayer graphene grown by chemical vapor deposition (CVD) was wet-transferred onto a target substrate. To facilitate the interfacial doping by PEI, the hydrophobic graphene surface was altered to be hydrophilic by oxygen plasma treatments while minimizing defect generation. The effect of PEI doping on graphene was confirmed using a back-gated field-effect transistor (FET). The CVD-grown monolayer graphene coated with PEI exhibited an improved TCR of -0.49(±0.03) %/K in a temperature range of 30~50℃.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.31 no.4C
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• pp.117-125
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• 2011

The practical use of the electrical resistivity, which can makes the acquirement of the high resolution data in specific area, is increased in order to obtain a reasonable data for a ground investigation. The objective of this study is development of TRPF(Temperature-compensated Resistivity Probe for Field test), and an application in the field test for obtaining a reliable electrical resistivity value about considering the temperature effects. Temperature sensor is attached at 15mm, 30mm, 90mm below from the cone tip in consideration with the results of temperature transient process of cone probe and safety, and the angle of cone tip is $60^{\circ}$ for geometrical reason and minimizing the disturbance during the penetration test. Diameter of the cone probe is equally 35.7mm and penetration rate is 2 cm/sec for a comparison with standard cones such as CPT and SPT, and others. The temperature change is instantly observed around $4^{\circ}C$ when touching the ground, and the comparing results among the other cones indicates that the temperature compensation should be conducted in the ground survey using the electrical resistivity. This study shows that the necessity of temperature effects compensation during penetration test through the development and field verification of TRPF (Temperature-compensated Resistivity Probe for Field test).

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1550-1552
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• 2003

고밀도의 트렌치 전력 MOSFET를 제작하는 데 있어서 새로운 소자의 구조와 공정을 제시하고 이차원 소자 및 공정 시뮬레이터를 이용하여 검증했다. 트렌치 게이트 MOSFET의 온-저항을 낮추기 위해 셀 피치가 서브-마이크론으로 발전할 경우 문제가 되는 소오스 영역을 확보하고자 p-base의 음 접촉을 위한 P+ 영역과 N+ 소오스 등이 트렌치의 측벽에 형성되고, 트렌치 게이트는 그 아래에 매몰된 구조를 제안했다. 시뮬레이션 결과는 항복전압이 45 V이고, 온-저항이 12.9m${\Omega}{\cdot}mm^2$로 향상된 trade-off 특성을 보였다.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.43 no.2
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• pp.179-185
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• 2015

The main objective of thermal design for a space-borne FPA(Focal Plane Assembly) is to provide stable thermal environment during imaging operation and thus maintain the image quality. An FPA must be maintained within its operating temperature range and cooled down to its initial temperature soon enough for the next imaging operation. This paper describes the study result on performing trade-off studies for FPA thermal design by using simplified thermal node analysis about FPA preliminary design. It also describes the verification results of the study by comparing thermal analysis results and trade-off study results. According to results, we can conclude that this approach is useful for simple and quick trade-off studies without thermal analysis based on thermal math models.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.5
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• pp.484-491
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• 2002

This paper presents the results of a study of voltage-controlled PIN diode attenuators for Ku-band satellite payload and suggests the temperature-compensation method of these attenuators. The PIN diode attenuators are designed using thin-film hybrid techniques. The load resistance for maximum linear characteristics is determined by simulation and measurements. In the case of APD0805, load resistance of 150 $\Omega$ gives attenuator up to 10 dB linear attenuation range per a PIN diode. Also, measurements over temperature of these PIN diode attenuators were performed. From these measurements, designed PIN diode attenuators shows the severe temperature dependency due to forward voltage variation. A temperature compensation method using thermistor is now suggested to compensate the temperature variation of these PIN diode attenuators. This circuit shows good linear characteristics over wide temperature range

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.6
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• pp.22-27
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• 2008

Analytical models for breakdown voltage and specific on-resistance of 4H-silicon carbide Schottky diodes have been derived successfully by extracting an effective ionization coefficient $\gamma$ from ionization coefficients $\alpha$ and $\beta$ for electron and hole in 4H-SiC. The breakdown voltages extracted from our analytical model are compared with experimental results. The specific on-resistance as a function of doping concentration is also compared with the ones reported previously. Good fits with the experimental results are found for the breakdown voltage within 10% in error for the doping concentration in the range of about $10^{15}{\sim}10^{18}\;cm^{-3}$. The analytical results show good agreement with the experimental data for the specific on-resistance in the range of $3{\times}10^{15}{\sim}2{\times}10^{16}\;cm^{-3}$.

• Journal of Aerospace System Engineering
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• v.13 no.2
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• pp.43-50
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• 2019

Satellite and aircraft components are greatly affected by the possibility for missions and safety due to temperature effects. In the field of fuel cells, research is actively carried out for UAV. For the efficiency and stability of the fuel cells, the temperature for operations must be confirmed. In this paper, a smart paint was fabricated with $BaTiO_3$ and $SrTiO_3$ ceramics in order to take advantage of the rapid characteristics of the PTC thermistor, which is the resistance changes abruptly above the Curie point. A coating agent was prepared to prevent the paint from peeling off the samples and the coated models were checked for resistance changes. Moreover, the resistance change of the $BaTiO_3$ and $SrTiO_3$ with temperature conditions was measured before and after coating.