• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.83-91
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• 1994

We have constructed a vertical gradient freeze (VGF) grower for GaAs single crystals 2 inch in diameter and have grown semi-insulating GaAs co-doped with Cr and In. For the co-doped crystal, the segregation coefficients of the dopants remain unchanged when compared to those doped with only Cr or In. The concentration of Cr and in atoms range from about $2{\Times}10_{16} to 3{imes}10^{17} cm^{-3}$ and $2{\Times}10^{19} to 3{\Times}10^{20} cm^{-3}$ at the seed to the tail part of the grown crystal, respectively. The averaged dislocation etch pit density is found to be less than $8000 cm^{-2}$ throughout the ingot. It is also found that there is some evidence of lattice hardening for the crystal in which the dislocation density is decreased to less than $1000 cm^{-2}$ as In concentration increases. The resistivity increases abruptly from $10^{-2}$ up to $10^8$ Ohm-cm, while the carrier concentration decreases from $10^{16}$ to $10^8 cm^{-3}$ along the growth direction of the GaAs crystal. Semi-insulating properties can be obtained above a critical concentration of Cr of about $6{\Times}10{^16} cm^{-3}$ in the crystal. The main deep levels existing in the GaAs: Cr,In sample are two electron traps at $E_C-0.81eV, E_C-0.35eV$, and two hole traps at $E_V+0.89eV, E_V+0.65eV$.

• The Journal of the Petrological Society of Korea
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• v.23 no.4
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• pp.311-324
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• 2014

The Hongjeom formation of the Pyeongan Supergroup in the Munkyeong coalfield mainly consists of metapsammite and metapelites. Metampelites occur as slate preserving chloritoid+chlorite+muscovite and andalusite+biotite+chlorite+muscovite mineral assemblages. Chloritoid and andalusite occur as porphyroblast, and the matrix composed of fine-grained micas. Metamorphic P-T conditions for these mineral assemblages are $510-520^{\circ}C$ and 3.0-3.5kbar based on P-T pseudosection in $MnO-K_2O-FeO-MgO-Al_2O_3-SiO_2-H_2O(MnKFMASH)$ system and isopleth intersections of Fe/(Fe+Mg) ratios in chloritoid and chlorite. The medium temperature and low pressure metamorphism resulted from a higher geothermal gradient ($40-45^{\circ}C/km$) condition than that of burial metamorphism. The youngest (SHRIMP U-Pb age; ca. 327-310 Ma) detrital zircon grains from the Hongjeom formation display oscillatory zoning and relatively high Th/U ratio (0.60-1.12). Based on the previous sedimentary, paleontological, and geochronological studies in the Taebaeksan basin together with results of this study, we suggest that (1) initial deposition of the Hongjeom formation was contemporaneous with a magmatic activity in the provenance, (2) the Pyeongan Supergroup was deposited in an arc-related basin at an active continental margin during the Carboniferous to Permain, and (3) magmatic activities occurred repetitively in relatively short interval in the active continental margin had continuously supplied sediments to the basin.

• Journal of the Korean Society of Propulsion Engineers
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• v.21 no.1
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• pp.17-25
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• 2017

An experimental study was performed for the combustion-field visualization of the burner which burns the liquid hydrocarbon fuel atomized by an ultrasonic oscillator. Configurations of the flame and temperature gradient were caught by both high-speed camera and thermo-graphic camera, and those images were analyzed in detail through a post-processing. In addition, the fuel consumption was measured using the balance during the combustion reaction. As a result, the consumption of atomized fuel increased with the increasing flow-rate of carrier-gas, but any correlation between the air/fuel ratio and carrier-gas flow-rate was not found at the low flow-rate condition. Also, the combustion-field grew and reaction-temperature rose due to the strengthening of combustion reaction with the increasing flow-rate of carrier-gas and power consumption of ultrasonic oscillator.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.1
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• pp.1-7
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• 2016

RE : YAG ($RE=Nd^{3+}$, $Er^{3+}$) single crystals are laser diodes and generally grown by Czochralski method with controlling the various growth parameter. Since the defects occurred by temperature gradient or the rotation speed of solid-liquid growth interface act as the decline of crystal optical property during the growth procedure, crystalline quality improvement via defects analysis is necessary. The etch pit density (EPD) analysis was used to confirm the surface defect of grown RE : YAG single crystal and to select the area of transmission electron microscopy (TEM) analysis. Defects in the specimen produced by tripod polishing method such as buckling, rod shaped, bend contours by internal stress, segregation and others were observed by using 200 kV TEM and 300 kV FE-TEM.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.383-387
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• 1998

The vacuum-Bridgman equipment for large size diameter (4 inch more over) crystal growth was organized simply and the $CaF_2$ single crystal which was grown in the conditions of growth rate of 2mm/hr, freezing temperature gradient of $12^{\circ}C$/cm, have analyzed to keep excellent properties. Using Mo thermal reflector of umbrella shape, it could be eliminated the formation of polycrystalline. The preferential growth direction was (111) and the calculated lattice parameter was $5.460 \AA$ by XRD peaks. The secondary phases, also, was not formed by means of powder-XRD analysis. The value of EPD is $1.4{\times}10^4 \textrm{cm}^{-2}$ and the optical quality, which is the transmittance is 91% up in UV region, is suitable for optical components of UV applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.626-626
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• 2013

P-N 접합에 의해 절연된 게이트를 통해 전류 통로를 제어하는 접합형 전계효과 트랜지스터(Junction Field Effect Transistors; JFETs)는, 입력 임피던스가 크고, 온도에 덜 민감하며, 제조가 간편하여 집적회로(IC) 제조가 용이하고, 동작의 해석이 단순하다는 장점을 가지고 있다. 특히 JFET는 선형적인 전류의 증폭 특성을 가지고 있으며, 잡음이작기 때문에, 감도가 우수한 음향 센서의 증폭회로, 선형성이 우수한 증폭회로, 입력 계측 증폭 회로 등에 주로 사용되고 있다. 기존에 사용되는 JFET 소자는 구조와 제조 공정에 따라서, 컷 오프 전압($V_{cut-off}$)과 드레인-소스 포화 전류($I_{DSS}$)의 변화가 심하게 발생하여, 소자의 전기적 특성 제어가 어렵고, 소자의 수율이 낮다는 문제점이 있다. 본 연구에서는 TCAD 시뮬레이션을 통해 게이트 전압에 의해 채널이 형성되는 채널 층의 상하부에 각각 $Si_xGe_{1-x}$로 이루어진 상부 및 하부 확산 저지층을 삽입한 JFET 소자 형성하여, 게이트 접합부의 접합 영역 확산을 저지하고, 상기 게이트 접합부가 계면에서 날카로운 농도 구배를 갖도록 함으로써, 공정 변화에 따른 전기적 특성의 편차가 작아지는 JFET 소자 구조를 만들어 전기적 특성을 개선하였다. JFET은 채널층에 삽입된 $Si_xGe_{1-x}$ 층의 두께, Ge 함유량 및 n채널층의 두께를 변화하였을 때, off 상태의 게이트-소스 전압이 감소한 반면에 드레인-소스 포화 전류($I_{DSS}$)와 컨덕턴스(gm) 값이 증가하였다. 삽입된 $Si_xGe_{1-x}$층이 Boron이 밖으로 확산되는 현상이 감소하여 채널이 좁아지는 현상을 막아 소자의 전기적 특성을 개선함으로써 제조공정의 변화에 관계없이 컷오프 전압을 정확하고 안정되게 제어할 수 있고 이를 통해 소자의 수율을 높일 수 있을 것으로 기대된다.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.37 no.1
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• pp.62-68
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• 2009

The interaction between wall blowing and oxidizer flow can generate a very complicated flow characteristics in combustion chamber of hybrid rockets. LES analysis was conducted with an in-house CFD code to investigate the features of turbulent flow without chemical reactions. The numerical results reveal that the flow oscillations at a certain frequency exists on the fuel surface, which is analogous to those observed in the solid propellant combustion. However, the observation of oscillating flow at a certain frequency is only limited to a very thin layer adjacent to wall surface and the strength of the oscillation is not strong enough to induce the drastic change in temperature gradient on the surface. The visualization of fluctuating pressure components shows the periodic appearance of relatively high and low pressure regions along the axial direction. This subsequently results in the oscillation of flow at a certain fixed frequency. This implies that the resonance phenomenon would be possible if the external disturbances such as acoustic excitation could be imposed to the oscillating flow in the combustion chamber.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.998-1001
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• 2004

ZnO, $SnO_2$ 타겟 각각의 RF 파워를 50 W, 38 W로 고정시킨 후 combinatorial RF magnetron sputtering법을 사용하여 기판 위치에 따라서 조성 구배를 주어 여러 가지 조성의 Zn-Sn-O(ZTO) 박막을 제작하였다. 시편의 열처리에 따른 물성 변화를 분석하기 위해 Rapid Thermal Annealer(RTA)을 이용하여 450, $650{^\circ}C$의 온도 및 $10^{-2}$ Ton의 진공 분위기에서 각각 1 시간 동안 열처리하였다. XRD 분석 결과 상온에서 제작된 ZTO 박막은 Sn 18 at%의 조성을 갖는 시편을 제외하고 모두 비정질상으로 나타났다. $450^{\circ}C$에서 열처리 후 구조적인 변화는 보이지 않았으나, 캐리어 농도와 이동도는 증가하였으며 Sn 54 at%의 조성에서 최고 $25.4cm^2/Vsec$의 전자 이동도를 나타내었다. $26{\leq}Sn$ $at%{\leq}65$의 조성 범위를 갖는 박막은 가시광 영역에서 80 % 이상의 투과도를 가졌으며 $650^{\circ}C$에서 결정화가 되면서 투과도가 증가하였다.

• Transactions of the Korean Society of Mechanical Engineers
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• v.17 no.6
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• pp.1621-1632
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• 1993

A numerical simulation is carried out on flows in a rotating serpentine flow passage, which models a cooling passage in a gas turbine blade, by using a 3-D FVM based TURBO-D program. When it is rotating, the flow field exhibits quite different aspects due to the effect of the Coriolis force. Especially the secondary flow field appearing in the cross-sectional area is very complex because of the combined effect of the Coriolis force and the centrifugal force in the curved area. Local Nusselt numbers are also obtained based on the Reynolds analogy and compared with the published experimental data showing a good agreement. The results of the present study can be applied to the design of cooling passages of a gas turbine blade.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.166-176
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• 1996

The fundamental conditions for growing $CsLiB_{6}O_{10}$ crystal, new nonlinear optical material, were investigated. Stoichiometirc mixture of $CsLiB_{6}O_{10}$ composition resulted in the crystal of the same composition in the process of heating at the temperature above $600^{\circ}C$. No phase transition was observed in the $CsLiB_{6}O_{10}$ crystal in the temperature range of $600^{\circ}C~800^{\circ}C$, and $CsLiB_{6}O_{10}$ crystal melted congruently at $850^{\circ}C$. When the melt of this composition was cooled at rates of $1~150^{\circ}C/hr$, glass state ingot was formed regardless of cooling rates. However, $CsLiB_{6}O_{10}$ crystals were formed directly from the melt at any cooling rate in the presence of $CsLiB_{6}O_{10}$ seed crystal in the melt. Transparent $CsLiB_{6}O_{10}$ single crystal was grown from the melt using the seed crystal at the growing rate of 0.06 mm/hr in the furnace having the temperature gradient of $100^{\circ}C/cm$. Analysis of the single crystal showed that the crystal belonged to the noncentrosymmetric tetragonal space group 142d and unit cell dimensions were $a=10.467(1)\;{\AA},\;c=8.972(1)\;{\AA}\;and\;V=983.0(2)\;{\AA}^3$. Optical absorption edge of the crystal was observed at 180mm and the crystal showed a good optical transparency (70% transmittance, sample thickness 0.5 mm) in the wide wavelength range above 300 nm.