• Journal of the Institute of Electronics Engineers of Korea SP
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• v.39 no.2
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• pp.50-55
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• 2002

The standard approach of image resampling is to fit the original image with continuous model and resample the function at a desired rate. We used the B-spline function as the continuous model because it oscillates less than the others. The main purpose of this paper is the derivation of a nonuniform optimal resampling algorithm. To derive it, needing approximation can be computed in three steps: 1) determining the I-spline coefficients by matrix inverse process, 2) obtaining the transformed-spline coefficients by the optimal resampling algorithm derived from the orthogonal projection theorem, 3) converting of the result back into the signal domain by indirect B-spline transformation. With these methods, we can use B-spline in the non-uniform resampling, which is proved to be a good kernel in uniform resampling, and can also verify the applicability from our experiments.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.8
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• pp.1885-1890
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• 2013

In this paper, the electrical properties of nanoscale junctionless p-channel MuGFET at cryogenic temperature have been analyzed experimentally. The experiment was performed using a cryogenic probe station which uses the liquid Helium. It has been observed that the drain current oscillation at low drain voltage and cryogenic temperature was more pronounced in junctionless transistor than in accumulation mode transistor. The reason for more marked oscillation is due to the smaller electrical cross section area of the inversion channel which is formed at the center of silicon film in junctionless transistor. It was also observed that the drain current and maximum transconductance were increased as the measurement temperature increased. This is resulted from the increase of hole mobility and the decrease of the threshold voltage as the measurement temperature increases. The drain current oscillation due to the quantum effects can be occurred up to the room temperature when the device size scales down to the nanometer level.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.8
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• pp.854-861
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• 2008

We have described a high power hybrid envelope elimination and restoration(H-EER) transmitter for IEEE 802.16e Mobile World Interoperability for Microwave Access(WiMAX) using an efficiency optimized power amplifier(PA). The PA has been designed to have maximum PAE at the important power generation $V_{ds}$, region using Nitronex 100-W PEP GaN HEMT. For the high power application, H-EER transmitter should be considered the regenerative oscillation problem due to the PA's bias fluctuation effect and bias modulator stability issue. Therefore, the bias modulator for H-EER transmitter has been designed to suppress the regenerative oscillation. For the interlock experiment, the bias modulator has been built with the efficiency of 72% and peak output voltage of 30 V for the envelope signal with a PAPR of 8.5 dB. The H-EER transmitter for WiMAX application has been achieved a high PAE characteristic, 38.8 % at an output power of 41.25 dBm. By using digital predistortion(DPD) technique, the Relative Constellation Error (RCE) has been satisfied the specification of -34.5 dB. This is the first work at 2.655 GHz high power H-EER transmitter for WiMAX application.