• Title/Summary/Keyword: 영역상수법

Search Result 112, Processing Time 0.032 seconds

Kinetic Studies on the Nucleophilic Addition of 3-Mercaptopropionic Acid to ${\beta},\;{\beta}$-Diethoxycarbonylstyrene Derivatives (${\beta},\;{\beta}$-Diethoxycarbonylstyrene 유도체에 대한 3-Mercaptopropionic Acid의 친핵성첨가반응에 관한 반응속도론적 연구)

  • Tae-Rin Kim;Yun-Chung Choi;Myung-Sook Chung
    • Journal of the Korean Chemical Society
    • /
    • v.33 no.1
    • /
    • pp.127-134
    • /
    • 1989
  • The rate constants of the nucleophilic addition reaction of 3-mercaptopropionic acid to the ${\beta},\;{\beta}$-diethoxycarbonylstryene derivatives (H, p-OCH$_3$, 3,4,5-(OCH$_3)_3$, 3,4-methylenedioxy) were determined by ultraviolet spectrophotometry, and rate equation which could be applied over a wide pH range was obtained. On the basis of pH-rate profile and the presence of general base catalysis, a plausible mechanism of this addition reaction was propound:Below pH 6.0 the reaction was initiated by the addition of neutral 3-mercaptopropionic acid molecule, and in the range of pH 6.0∼8.0, a neutral 3-mercaptopropionic acid molecule and a sulfide anion competitively attacked to the double bond. Above pH 8.0, the reaction proceeded through the addition of a sulfide anion.

  • PDF

유기 금속 화학 증착법에 의한 Si 기판 위에 GaP 층 성장시 에피의 초기 단계의 성장 매개 변수에 영향

  • Gang, Dae-Seon;Seo, Yeong-Seong;Kim, Seong-Min;Sin, Jae-Cheol;Han, Myeong-Su;Kim, Hyo-Jin
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2013.08a
    • /
    • pp.209.1-209.1
    • /
    • 2013
  • GaP는 가시광선 발광다이오드을 얻을 수 있는 적절한 재료중의 하나로 해당영역의 파장에 대하여 높은 양자효율을 얻을 수 있고, 깊은 준위 재결합이 없기 때문에 GaP 녹색 및 As 첨가한 GaAsP 적색 LED 에 적용할 수 있습니다. 또한, 상온에서 2.2 eV 에 해당하는 넓은 에너지 밴드갭을 가지고 있으므로, 소음이 없는 자외선 검출기에도 적합합니다. 이 물질에 대한 소자들은 기존에 GaP 기판을 사용하였습니다. 최근, GaP 와 격자상수가 비슷한 Si 기판을 활용하여 그 위에 성장하는 방법에 대한 관심이 많아졌습니다. Si는 물리적 및 화학적으로 안정하고 딱딱한 소재이며 대면적 기판을 쉽게 얻을 수 있어 전자 기기 및 대규모 집적 회로의 좋은 소재입니다. Si 와 대조적으로 GaP은 깨지기 쉬운 재료이며 GaP 기판은 Si와 같은 대면적 기판을 얻을 수 없습니다. 이러한 문제의 한 가지 해결책은 Si 기판위에 GaP 층의 성장입니다. GaP 과 Si의 조합은 현재의 광전소자 들에 더하여 더 많은 응용프로그램들을 가능하게 할 것입니다. 그러나, Si 기판위에 GaP 성장 시 삼차원적 성장 및 역위상 경계면과 같은 문제점들이 발생하므로 질이 높고 균일한 결정의 GaP 를 얻기가 어렵습니다. 따라서, Si 에 GaP 의 성장시 초기 단계를 제어하는 성장 기술이 필요합니다. 본 연구에서는, 유기금속화학증착법을 이용하여 Si 기판위에 양질의 GaP를 얻을 수 있는 최적의 성장조건을 얻고자 합니다. 실험 조건은 Si에 GaP의 에피택셜 성장의 초기 단계에 영향을 주는 V/III 비율, 성장압력, 기판방향 등을 가변하는 조건으로 진행하였습니다. V/III 비율은 100~6400, 성장 압력은 76~380 Torr로 진행하였고, Si 기판은 just(001)과 2~6도 기울어진 (001) 기판을 사용하였습니다.

  • PDF

Optimization of Extremely Low Numerical-Dispersion FDTD Method Based on H(2,4) Scheme for Wideband Analysis of Lossy Dielectric (H(2,4) 기법을 기반으로 한 저분산 FDTD 기법의 손실 매질의 광대역 해석을 위한 최적화 방법)

  • Oh, Ilyoung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.29 no.3
    • /
    • pp.225-232
    • /
    • 2018
  • This paper proposed the optimization method of the extremely low numerical-dispersion finite-difference time-domain (ELND-FDTD) method based on the H(2,4) scheme for wideband and extremely accurate electromagnetic properties of lossy material, which has a constant conductivity and relative permittivity. The optimized values of three variables are calculated for the minimum numerical dispersion errors of the proposed FDTD method. The excellent accuracy of the proposed method is verified by comparing the calculated results of three different FDTD methods and the analytical results of the two-dimensional dielectric cylinder scattering problem.

Fabrication of High-permittivity and low-loss dielectric BZN thin films by Pulsed laser deposition (PLD 법을 이용한 고유전율, 저유전손실 BZN 박막 제작)

  • Bae, Ki-Ryeol;Lee, Won-Jae;Shin, Byung-Chul
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2009.06a
    • /
    • pp.230-231
    • /
    • 2009
  • 펄스 레이저 층착법 (이하 PLD)은 다성분계 산화물 박막 또는 다층구조의 박막 제작에 매우 유용한 기술이다. 본 실험에서는 KrF 엑시머 레이저를 이용하여 pt on Si 기판 위에 150nm 두께의 $Bi_{1.5}ZnNb_{1.5}O_7$(이하 BZN) 박막을 다양한 기판온도에서 제작하였다. XRD를 이용하여 BZN 박막의 구조적 특성을 분석하였고, 박막을 MIM 구조로 제작하여 유정적 특성을 측정하였다. 제조한 BZN 박막은 $500^{\circ}C$ 이상에서 결정질을, $500^{\circ}C$ 이하의 온도에서는 비정질 특성을 보였다. 유전 특성은 100 - 400$^{\circ}C$ 영역에서는 온도가 증가함에 따라 졸은 특성을 나타내었고, $500^{\circ}C$에서부터는 감소하였다. 증착 온도 $400^{\circ}C$에서 제작한 BZN 박막이 유전상수가 67.8, 유전 손실이 0.006으로 가장 줄은 유전특성을 나타내었다.

  • PDF

Properties of YIG films grown by solid phase epitaxy (고상 에피택시법으로 성장한 YIG 박막의 특성)

  • ;S. Yamamoto
    • Proceedings of the Korean Magnestics Society Conference
    • /
    • 2003.06a
    • /
    • pp.192-193
    • /
    • 2003
  • YIG 에피택시박막은 다른 강자성, 페리자성재료에 비해 수 GHz의 영역에서 매우 우수한 특성을 나타내고 있다. YIG 에피택시 박막은 고상에피택시 방법으로 제조할 경우 매우 편리하게 제조할 수 있는 것으로 알려져 있는데, 이 방법은 상온에서 Y-Fe-O 박막을 GGG(111)기판에 스파터한 뒤 공기 중에서 열처리하면 간편하게 얻을 수 있다. 이 방법은 통상과 같이 고온에서 아주 느린 속도로 에피택시박막을 성장시키는 스파터방법에 비해 매우 간편하고 경제적인 것으로, 본 연구에서는 보통의 분말소결공정으로 제작된 2.5인치 YIG 타겟을 사용하여 두께 2.5 $\mu\textrm{m}$ 비정질 Fe-Y-O 박막을 만든 뒤 550 - 1050 $^{\circ}C$의 공기 중에서 열처리하였다. 비정질 박막을 $600^{\circ}C$이하에서 10 시간동안 열처리하였을 경우 매우 약한 YIG상의 회절선만 관찰할 수 있었다. 반면에 온도를 $650^{\circ}C$로 올리면 매우 강한 (444) 또는 (888)회절선과 매우 약한 다른 회절선을 관찰 할 수 있었다. 이 시편의 경우 (888)회절선의 강도는 GGG기판의 (888)회절선의 강도와 비교할 정도로 매우 강하여 에피택시성장이 매우 잘 이루어질 수 있다는 가능성을 확인할 수 있었다. 그리고 YIG(888) 회절선의 록킹곡선의 반가폭이 0.14$^{\circ}$ 이었고, 이것은 에피택시성장이 매우 잘 이루어지고 있음을 의미하는 것이다. 열처리 온도가 감소함에 따라 YIG박막의 격자상수는 감소하였으며 YIG(888)회절선의 강도는 그림 1과 같이 넓어지고 그 강도는 약해진다.

  • PDF

Growth and defect structures of undoped and heavily MgO-doped LiNbO3 single crystals (Undoped and heavily MgO-doped $LiNbO_3$ 결정의 성장 및 결함구조)

  • 김상수
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.9 no.5
    • /
    • pp.447-453
    • /
    • 1999
  • Congruent $LiNbO_3$ crystals with doped Mg and codoped with Mn or Fe were grown by the Czochralski method. It is known that the physical properties of $LiNbO_3$ depend strongly on the addition of Mg and transition metals. This is established by studying the following properties; XRD patterns, the phase transition temperature, energy of the fundamental absorption edge, the shape of the absorption band of the $OH^-$ vibration and lines of the ESR of $Fe^{3+},\; Mn^{2+}$. The position of the UV absorption edge and the shape and peak point of the absorption band of the $OH^-$ vibrational band changed monotonously up to a critical concentration of $Mg^{2+}$ ions. The mechanism of the incorporation of Mg ions changes at this concentration. The transition temperature was estimated by measuring the dielectric temperature behavior up to $1230^{\circ}C$ in a frequency range of 100Hz to 10MHz. EPR of $Mn^{2+}\;and\; Fe^{3+}$ ions were employed to investigated the Mg doping effects in the $LiNbO_3$ crystal. The increase of linewidths and the asymmetry of signals were observed in all crystals. New signals of $Fe^{3+}$ arising from the new centers were observed I the heavily Mg-doped crystals.

  • PDF

An Experimental Study on the Trajectory Characteristics of Liquid Jet with Canted Injection Angles in Crossflow (수직분사제트에서 다양한 분사각도의 분무궤적 특성에 대한 실험적 연구)

  • Kim, Min-Ki;Song, Jin-Kwan;Hwang, Jeong-Jae;Yoon, Young-Bin
    • Journal of the Korean Society of Propulsion Engineers
    • /
    • v.12 no.6
    • /
    • pp.38-47
    • /
    • 2008
  • The liquid column and spray trajectory have been experimentally studied in liquid jets injected into subsonic crossflow. With water as fuel injection velocity, injection angle were varied to provide of jet operation conditions. The Pulsed Shadowgraph Photography and Planar Liquid Laser Induced Fluorescence technique was used to determine the injection characteristics in a subsonic crossflow of air. And the mainly objectives of this research was to get a empirical formula of liquid column and spray region trajectory with forward and reversed injection of air stream. As the result, This research has been shown that each trajectories were spatially dependent on air-stream velocity, fuel injection velocity, various injection angle, and normalized injector exit diameter. Furthermore, the empirical formula of liquid column trajectories has been some different of drag coefficient results between forward and reversed angled injection.

Image Interpolation Using Linear Modeling for the Absolute Values of Wavelet Coefficients Across Scale (스케일간 웨이블릿 계수 절대치의 선형 모델링을 이용한 영상 보간)

  • Kim Sang-Soo;Eom Il-Kyu;Kim Yoo-Shin
    • Journal of the Institute of Electronics Engineers of Korea SP
    • /
    • v.42 no.6
    • /
    • pp.19-26
    • /
    • 2005
  • Image interpolation in the wavelet domain usually takes advantage of the probabilistic models for the intrascale statistics and the interscale dependency. In this paper, we adopt the linear model for the absolute values of wavelet coefficients of interpolated image across scale to estimate the variances of extrapolated bands. The proposed algorithm uses randomly generated wavelet coefficients based on the estimated parameters for probabilistic model. Random number generation according to the estimated probabilistic model may induce the 'salt and pepper' noise in subbands. We reduce the noise power by Wiener filtering. We observe that the proposed method generates the histogram of the subband coefficients similar to the that of original image. Experimental results show that our method outperforms the previous wavelet-domain interpolation method as well as the conventional bicubic method.

Effects of Sm:Ba:Cu Composition Ratio on the Superconducting Properties of SmBCO Coated Conductor Prepared by using a Composition Gradient Method (SmBCO 초전도 선재 특성에 대한 Sm:Ba:Cu 조성비의 영향)

  • Kim, H.S.;Oh, S.S.;Jang, S.H.;Min, C.H.;Ha, H.S.;Ha, D.W.;Ko, R.K.;Youm, D.J.;Moon, S.H.;Chung, K.C.
    • Progress in Superconductivity
    • /
    • v.13 no.1
    • /
    • pp.7-11
    • /
    • 2011
  • The effects of Sm:Ba:Cu composition ratio in SmBCO coated conductor on their superconducting properties were investigated. The SmBCO coated conductors were fabricated by reactive co-evaporation method using EDDC(Evaporation using Drum in Dual Chamber) system. In this system, we could obtain various samples with different composition ratios in a batch by the technique providing composition gradient at deposition zone. From the specimens prepared by EDDC system, we found that composition ratio is uniform parallel to the drum axis, but gradient along the circumferential direction of the drum. We installed a shield having parallelogram open area between the deposition chamber and the evaporation chamber in EDDC system, and attached a 30 cm long template, which is parallel to drum axis, onto the drum surface. In this configuration, we could obtain SmBCO coated conductors having a gradient composition along the length of template. We measured the composition ratios and surface morphologies with periodic interval by SEM and EDAX, and confirmed the profile of composition ratio. We also measured critical current using non-contact Hall probe critical current measurement system and thereby could plot composition ratio vs. critical current. The maximum critical current was obtained, and the surface morphology with the shape of roof tile was observed at the corresponding composition ratio of Sm:Ba:Cu = 1.01:1.99:4.87. It was also found that composition ratio had an effect on not only critical current but also surface morphology.

$CaF_2$ single crystals growth for UV grade by vacuum-Bridgman method (Vacuum-Bridgman법에 의한 UV grade 형석$(CaF_2)$단결정 성장)

  • Seo, Soo-Hyung;Joo, Kyoung;Auh, Keun-Ho
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.8 no.3
    • /
    • pp.383-387
    • /
    • 1998
  • The vacuum-Bridgman equipment for large size diameter (4 inch more over) crystal growth was organized simply and the $CaF_2$ single crystal which was grown in the conditions of growth rate of 2mm/hr, freezing temperature gradient of $12^{\circ}C$/cm, have analyzed to keep excellent properties. Using Mo thermal reflector of umbrella shape, it could be eliminated the formation of polycrystalline. The preferential growth direction was (111) and the calculated lattice parameter was $5.460 \AA$ by XRD peaks. The secondary phases, also, was not formed by means of powder-XRD analysis. The value of EPD is $1.4{\times}10^4 \textrm{cm}^{-2}$ and the optical quality, which is the transmittance is 91% up in UV region, is suitable for optical components of UV applications.

  • PDF