• Proceedings of the Korea Water Resources Association Conference
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• 2021.06a
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• pp.388-388
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• 2021

하천에서 호안이나 교량의 교각 등은 홍수 시 주변 하상의 세굴에 의한 피해가 많이 발생한다. 하상보호를 위해서 하천 수공구조물 주변 하상에 자갈, 호박돌, 전석 등을 깔기도 한다. 이 재료들은 다공성 집단을 이루며 유수에 의한 소류력과 항력이 작용한다. 다공성 집단체 공극의 흐름에 의한 항력은 외부 흐름이 가하는 소류력에 비해 작으나 집단의 안정성에 큰 영향을 미칠 수 있다. 집단체에 작용하는 항력은 공극 내의 흐름의 유속과 항력계수를 이용하여 구할 수 있다. 본 연구에서는 다공성 매질 내 흐름에 대한 항력계수를 조사하기 위하여 수리실험을 이용하여 자갈 매질의 공극을 흐르는 물이 일으킨 항력과 동수경사를 측정하였다. 수리실험을 위한 대공극 매질은 상업용 연마 자갈을 사용하여 크기에 따라 작은 자갈(5~10mm), 중간자갈(15~25mm), 큰 자갈(25~50mm)로 구분하였다. 대표입경 D₅₀은 작은 자갈 8.0 mm, 중간 자갈 17.6 mm, 큰 자갈 32.2 mm이고, 형상계수는 각각 0.28~0.74, 0.29~0.58, 0.38~0.68의 범위였다. 자갈 매질의 공극율은 각각 0.405~0.422이었다. 매질 내의 흐름 길이는 24.2cm로 하였다. 실험결과 자갈 매질 내 흐름의 입자 레이놀즈수 Re_p에 따른 내부항력 F_D와 항력계수 C_D는 Fig. 1 및 Fig. 2와 같다. 실험에서 Re_p는 31.5~3,175.4였다. 자갈 매질의 내부항력은 Re_p가 증가하면 비선형적으로 증가하였으며 입자가 클수록 작았다. 항력계수는 작은 자갈과 중간 자갈 매질에 차이가 거의 없었으나 큰 자갈의 경우 작은 것으로 나타났다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.9
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• pp.803-809
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• 2005

Cerium ammonium nitrate (CAN) and nitric acid was used an etchant and an additive for Ru etching and polishing. pH and Eh values of the CAN and nitric acid added chemical solution satisfied the Ru etching condition. The etch rate increased linearly as the concentration of CAN increased. Nitric acid added solution had the high etch rate. But micro roughness of etched surfaces was not changed before and after etching, The removal rate of Ru film was the highest in $1wt\%$ abrasive added slurry, and not increased despite the concentration of alumina abrasive increased to $5wt\%$. Even Ru film was polished by only CAN solution due to the friction. The highest removal rate of 120nm/min was obtained in 1 M nitric acid and $1wt\%$ alumina abrasive particles added slurry. The lowest micro roughness value was observed in this slurry after polishing. From the XPS analysis of etched Ru surface, oxide layer was founded on the etched Ru surface. Therefore, Ru was polished by chemical etching of CAN solution and oxide layer abrasion by abrasive particles. From the result of removal rate without abrasive particle, the etching of CAN solution is more dominant to the Ru CMP.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.10
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• pp.1049-1055
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• 2004

Chemical Mechanical Polishing (CMP) is referred to as a three body tribological system, because it includes two solids in relative motion and the CMP slurry. On the assumption that the abrasives between the pad and the wafer could be a major reason not only for the friction force but also for material removal during polishing, the friction force generated during CMP process was investigated with the change of abrasive size and concentration of CMP slurry. The threshold point of average coefficient of friction (COF) with increase in abrasives concentration during interlayer dielectric (ILD) CMP was found experimentally and verified mathematically based on contact mechanics. The predictable models, Mode I (wafer is in contact with abrasives and pad) and Mode II (wafer is in contact with abrasives only), were proposed and used to explain the threshold point. The average COF value increased in the low abrasives concentration region which might be explained by Mode I. In contrast the average COF value decreased at high abrasives concentration which might be regarded to as Mode II. The threshold point observed seemed to be due to the transition from Mode I to Mode II. The tendency of threshold point with the variation of abrasive size was studied. The increase of particle radius could cause contact status to reach transition area faster. The correlation between COF and material removal rate was also investigated from the tribological and energetic point of view. Due to the energy loss by vibration of polishing equipment, COF value is not proportional to the material removal rate in this experiment.

• Tribology and Lubricants
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• v.35 no.5
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• pp.274-285
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• 2019

Chemical mechanical polishing (CMP), which is a material removal process involving chemical surface reactions and mechanical abrasive action, is an essential manufacturing process for obtaining high-quality semiconductor surfaces with ultrahigh precision features. Recent rapid growth in the industries of digital devices and semiconductors has accelerated the demands for processing of various substrate and film materials. In addition, to solve many issues and challenges related to high integration such as micro-defects, non-uniformity, and post-process cleaning, it has become increasingly necessary to approach and understand the processing mechanisms for various substrate materials and abrasive particle behaviors from a tribological point of view. Based on these backgrounds, we review recent CMP R&D trends in this study. We examine experimental and analytical studies with a focus on substrate materials and abrasive particles. For the reduction of micro-scratch generation, understanding the correlation between friction and the generation mechanism by abrasive particle behaviors is critical. Furthermore, the contact stiffness at the wafer-particle (slurry)-pad interface should be carefully considered. Regarding substrate materials, recent research trends and technologies have been introduced that focus on sapphire (${\alpha}$-alumina, $Al_2O_3$), silicon carbide (SiC), and gallium nitride (GaN), which are used for organic light emitting devices. High-speed processing technology that does not generate surface defects should be developed for low-cost production of various substrates. For this purpose, effective methods for reducing and removing surface residues and deformed layers should be explored through tribological approaches. Finally, we present future challenges and issues related to the CMP process from a tribological perspective.

• Tribology and Lubricants
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• v.34 no.6
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• pp.279-283
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• 2018

In this study, we investigate the behavior of abrasive particles and change of the stick-slip pattern according to chemical mechanical polishing (CMP) process parameters when a large number of abrasive particles are fixed on a pad. The CMP process is simulated using the finite element method. In the simulation, the abrasive grains are composed of those used in the actual CMP process. Considering the cohesion of the abrasive grains with the start of the CMP process, abrasive particles with various sizes are fixed onto the pad at different intervals so that stick-slip could occur. In this analysis, we determine that when the abrasive particle size is relatively large, the stick-slip period does not change as the pressure increases while the moving speed is constant. However, if the size of the abrasive grains is relatively small, the amount of deformation of the grains increases due to the elasticity of the pad. Therefore, the stick-slip pattern may not be observed. As the number of abrasive particles increases, the stick-slip period and displacement decrease. This is consistent with the decrease in the von Mises yield stress value on the surface of the wafer as the number of abrasive grains increases. We determine that when the number of the abrasive grains increases, the polishing rate, and characteristics are improved, and scratches are reduced. Moreover, we establish that the period of stick-slip increases and the change of the stick-slip size was not large when the abrasive particle size was relatively small.

• Journal of the Korean Society of Food Science and Nutrition
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• v.32 no.3
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• pp.370-374
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• 2003

Cell cracking method using a non-collision was evaluated for the possibility of new red ginseng grinding technique. Based on particle size distribution analysis by 1size shaker, the ratios of 100 mesh penetrated particles were 94.9% for hammer mill (group A) and 95.6% for cell crack (group B). The ratio of 120 mesh penetrated particle of group A was higher than that in group B. The particle size distributions for 100 mesh non-penetrated Powder between 2 groups were not significantly different, and particle size distribution analysis by laser scattering analyzer showed that the particle size ranges were 0.77~128.07 ${\mu}{\textrm}{m}$ for group A and 4.24~180.07 ${\mu}{\textrm}{m}$ for group B. The Particle size distribution in group A was more broad than that in group B. The mean particle size in group B was larger than that in group A, while the standard deviation of particle size distribution in group B was less than that in group A. Structural surface characteristics, in group A, particle size distribution was broad and the distribution curve was amorphous. The structure of individual particles was similar to unequal stone which was roughly grinded and had soft cotton-like surface. In the contrary, in group B, particle size distribution was relatively narrow and also individual size particles were ubiquitously distributed. The structure of individual particles was unequal cut stone shape.

• Particle and aerosol research
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• v.9 no.4
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• pp.261-269
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• 2013

The chemical mechanical polishing (CMP) process is widely used in semiconductor manufacturing process for planarization of various materials and structures. Point-of-use (POU) filters are used in most of the CMP processes in order to reduce the unwanted micro-scratches which may result in defects. The performance of the POU filter is depends on type and size of the abrasives used during cleaning process. For this reason, there is a need to evaluate POU filters for their filtration efficiency (FE) with different types of abrasives. In this study, we developed filter test system to evaluate the FE of POU using ceria and silica abrasives (slurry). The POU filter is roll type capsule filter with retention size of 0.2 ${\mu}m$. Two POU filters of different make are evaluated for FE. We observed that both POU filters show similar filtration efficiency for silica and ceria slurry. Results reveal that the ceria slurry and the colloidal silica particle are removed not only by mechanical way but also hydrodynamic and electrostatic interaction way.

• Journal of the Mineralogical Society of Korea
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• v.21 no.2
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• pp.201-208
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• 2008

Ceria ($CeO_2$) becomes one of important functional nanomaterials and a key abrasive material for chemical-mechanical planarization (CMP) of advanced integrated circuits in silicon semi-conductor technology. Two synthetic crystalline ceria (RT735, RT835) are studied by the Rietveld structural refinement to determine crystallite size and microstrain. Rietveld indices of RT735 and RT835 indicate good fitting with $R_p(%)=8.50$, 8.34; $R_{wp}(%)=13.4$, 13.5; $R_{exp}(%)=11.3$, 11.5; $R_B(%)=2.21$, 2.36; S(GofF: Goodness of fit)=1.2, 1.2, respectively. $CeO_2$ with space group Fm3m show a=5.41074(2), 5.41130(6) ${\AA}$, V=158.406(1), 158.455(3)${\AA}^3$ in dimension. Detailed Rietveld refinement reveals that crystallite size and microstrain are 37.42(1) nm, 0.0026 (RT735) and 72.80(2) nm, 0.0013 (RT835), respectively. It also shows that crystallite size and microstrain of ceria are inversely proportional to each other.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1294-1298
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• 2005

In this study, combined micro press and surface finishing process are proposed to fabricate the micro nozzle array on a stainless steel sheet metal. In micro hole punching process the burr occurs inevitably, but the burr must be minimized in order to improve the quality and accuracy of the product. For this reason, subsequent magnetic field-assisted finishing technique is applied to remove the burr which exists around the nozzles for ink-jet printer head and proved to be a feasible for deburring by experiment. The deburring characteristics of sheet metals were investigated changing with polishing time and magnetic abrasive size. After the deburring, the burr size has remarkably reduced and roundness of the hole also has improved.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.9
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• pp.32-37
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• 2008

Freestanding hydride vapor phase epitaxy grown GaN(Gallium Nitride) substrates subjected to various polishing methods were characterized for their surface and subsurface conditions, Although CMP(Chemical Mechanical Polishing) is one of the best approaches for reducing scratches and subsurface damages, the removal rate of Ga-polar surface in CMP is insignificant($0.1{\sim}0.3{\mu}m$/hr) as compared with that of N-polar surface, Therefore, conventional MP(Mechanical Polishing) is commonly used in the GaN substrate fabrication process, MP of (0001) surface of GaN has been demonstrated using diamond slurries with different abrasive sizes, Diamond abrasives of size ranging from 30nm to 100nm were dispersed in ethylene glycol solutions and mineral oil solutions, respectively. Significant change in the surface roughness ($R_a$ 0.15nm) and scratch-free surface were obtained by diamond slurry of 30nm in mean abrasive size dispersed in mineral oil solutions. However, MP process introduced subsurface damages confirmed by TEM (Transmission Electronic Microscope) and PL(Photo-Luminescence) analysis.