• Title/Summary/Keyword: 연마기계

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Development of Polishing Machine for Free Form Surface Die (자유 곡면 금형 연마기 개발)

  • 박정훈
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 2000.04a
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    • pp.417-422
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    • 2000
  • In the process of die manufacturing, according to increasing demand of die and molds, the efficient machining of dies and molds has been increased. However, while the cutting process has been automated by the progress of CNC(computer numerical control) and CAD/CAM, the polishing process still depends on the experienced knowledge of an expert. Also, even when workers are skilled in polishing dies. it takes much time to obtain the required roughness and smoothness on the surface of a die. Moreover, many workers gradually avoid doing polishing work because of the poor working conditions caused by dust and noise. Therefore, to improve productivity and to solve the potential shortage of skilled workers, a user-friendly automatic polishing system was developed in this research. The developed polishing system with five degrees of freedom is able to keep the polishing tool normal to the die surface during operation and is able to maintain a pressure constantly by the developed pneumatic system. Also, to evaluate polishing performance of the developend system and find the polishing conditions, the various polishing experiments were carried out.

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Development of Chemical Mechanical Polishing machine by Conical Drum (원뿔형 드럼을 이용한 화학기계적 연마기의 개발)

  • 서헌덕
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 1999.10a
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    • pp.525-529
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    • 1999
  • A cone shape drum polisher was developed to make up for the demerits of conventional CMP apparatus. The developed equipment has several superiorities. First of all, it can achieve uniform velocity profile on all the contact line because of its shape and easy to control the amount of slurry at the position of use. The whole area of wafer surface is exposed to the visual area except the contact line between wafer and drum, hence we can detect polishing end point more easily than any other polishing equipments. Also it has additional merits such as small foot print and polishing load. Polishing characteristics were investigated by developed equipment.

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Real-time wafer thin-film thickness measurement system implementation with eddy current sensors. (와전류센서를 이용한 실시간 웨이퍼 박막두께측정 시스템 구현)

  • Kim, Nam-woo;Hur, Chang-Wu
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2013.10a
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    • pp.383-385
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    • 2013
  • 반도체소자의 고속실현을 위해서 알루미늄배선에서 40% 가량 성능을 높이는 반면 제조비용은 30%까지 낮출 수 있는 구리를 선호하고 있으나, 식각이 잘 되지 않아 원하는 패턴으로 만들어 내기가 곤란한 공정기술의 어려움과 구리물질이 지닌 유독성문제를 가지고 있다. 기존의 식각기술로는 구리패턴을 얻을 수 없는 기술적 한계 때문에 화학.기계적 연마(CMP)를 이용한 평탄화와 연마를 통해서 구리배선을 얻는 다마스커스(Damascene)기술이 개발됐고 이를 이용한 구리배선기술이 현실적으로 가능하게 됐다. CMP를 이용한 평탄화 및 연마 공정에서 Wafer에 도포된 구리의 두께를 실시간으로 측정하여 정밀하게 제어할필요가 있는데, 본 논문에서는 와전류를 이용하여 옹고스트롬 단위의 두께를 실시간으로 측정하여 제어 하는 시스템구현에 대해 기술한다.

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Development of Ultraprecision Finishing Technique using Bonded Magnetic Abrasives (결합된 자성연마입자를 이용한 초정밀 피니싱 기술 개발)

  • 윤종학;박성준;안병운
    • Transactions of the Korean Society of Machine Tool Engineers
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    • v.12 no.5
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    • pp.59-66
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    • 2003
  • This study suggests the new ultraprecision finishing techniques for micro die and mold parts using magnetic field-assisted polishing. Conventional magnetic abrasives have several disadvantages, which are missing of abrasive particle and inequal mixture between magnetic particle and abrasive particle. Therefore, bonded magnetic abrasive particles are fabricated by several method. For example, plasma melting and direct bonding. Carbonyl iron powder is used as magnetic particle there silicon carbide and alumina are abrasive particles. Developed magnetic abrasives are analyzed using SEM. Feasibility of magnetic abrasive and polishing performance of this magnetic abrasive particles also have been investigated. After polishing, surface roughness of workpiece is reduced from 85.4 ㎚ Ra to 9 ㎚ RA.

A Study on Optics Polishing Technology by Adaptive Tool and Eccentric Motion Mechanism (적응형 공구 및 편심 운동 방식의 광학 연마 기술에 관한 연구)

  • Lee, Ho-Cheol
    • Transactions of the Korean Society of Machine Tool Engineers
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    • v.16 no.6
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    • pp.133-139
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    • 2007
  • In this paper, optics polishing technology using adaptive tool and eccentric motion mechanism was suggested. Optics polishing can make high reflective and accurate surface. The optics polishing process based on the eccentric motion mechanism has been used to manufacture the ophthalmic lens mold. Also ophthalmic lens mold factory hold conventionally a lot of the curved polishing tools for the versatile mold curves of eye diopters and want to reduce tool numbers. Therefore, a polishing machine with adaptive airbag tool was developed and experimentally verified in view of surface roughness and form accuracy.

Full Contact Polishing Method of Aspherical Glass Lens Mold by Airbag Polishing Tool (에어백 공구에 의한 비구면 유리 렌즈 금형의 전면 접촉 연마)

  • Lee, Ho-Cheol;Kim, Jung-Uk
    • Transactions of the Korean Society of Machine Tool Engineers
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    • v.17 no.5
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    • pp.82-88
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    • 2008
  • Conventional aspherical lens polishing methods by the small tool polishing use aspherical profile and the trajectory of the polishing tool is also controlled. In this paper, new full contact polishing mechanism is suggested to polish aspherical glass lens mold by both airbag polishing tool and eccentric motion. Full contact concept by airbag polishing tool and no position control make the easy polishing setup and do not need aspherical design profile. An aspherical lens polishing machine was made for this study and a verification experiment was performed for surface roughness improvements.

A Study for Global Planarization of Mutilevel Metal by CMP (Chemical Mechanical Polishing (CMP) 공정을 이용한 Mutilevel Metal 구조의 광역 평탄화에 관한 연구)

  • 김상용;서용진;김태형;이우선;김창일;장의구
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.12
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    • pp.1084-1090
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    • 1998
  • As device sizes are scaled down to submicron dimensions, planarization technology becomes increasingly important for both device fabrication and formation of multilevel interconnects. Chemical mechanical polishing (CMP) has emerged recently as a new processing technique for achieving a high degree of planarization for submicron VLSI applications. The polishing process has many variables, and most of which are not well understood. The factors determine the planarization performance are slurry and pad type, insert material, conditioning technique, and choice of polishing tool. Circuit density, pattern size, and wiring layout also affect the performance of a CMP planarization process. This paper presents the results of studies on CMP process window characterization for 0.35 micron process with 5 metal layers.

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Hydrodynamic Pressure and Shear Stress in Chemical Mechanical Polishing (화학기계적연마 공정의 윤활역학적 압력 및 전단응력 분포 해석)

  • 조철호;박상신;안유민
    • Journal of the Korean Society for Precision Engineering
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    • v.17 no.1
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    • pp.179-184
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    • 2000
  • Chemical Mechanical Polishing (CMP) refers to a material removal process done by rubbing a work piece against a polishing pad under load in the presence of chemically active and abrasive containing slurry. CMP process is a combination of chemical dissolution and mechanical action. The mechanical action of CMP involves hydrodynamic behavior. The liquid slurry is trapped between the work piece and pad forming a hydrodynamic film. For the first step to understand material removal mechanism of the CMP process, the hydrodynamic analysis is done with semiconductor wafer. Three-dimensional Reynolds equation is applied to get pressure distribution of the slurry film. Shear stress distributions on the wafer surface are also analyzed

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The Effect of Slurry flow Rate and Temperature on CMP Characteristic (슬러리 온도 및 유량에 따른 CMP 연마특성)

  • 정영석;김형재;최재영;정해도
    • Journal of the Korean Society for Precision Engineering
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    • v.21 no.11
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    • pp.46-52
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    • 2004
  • CMP (Chemical-Mechanical Polishing) is a process in which both chemical and mechanical mechanisms act simultaneously to produce the planarized wafer. CMP process is an extensive usage and continuing high growth rates in the semiconductor industry. The understanding of the process, however, is much slower. The nature of material removal from the wafer is still undefined and ambiguous. Material removal rate according to the slurry flow rate is also undefined and ambiguous. Thus, in this study, the basic mechanism of material removal rate as slurry flow rate is defined in terms of energy supply and energy loss.

Optimization of Polishing Conditions for Anodized Inner Surfaces in Large Hydraulic Devices (아노다이징 처리된 대형 유압장치의 내면에 대한 연마 조건의 최적화)

  • Choi, Su-Hyun;Cho, Young-Tae
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.18 no.7
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    • pp.14-21
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    • 2019
  • Large-diameter hydraulic devices such as the hydraulic reservoir in aircraft that serves to balance the hydraulic pressure in the various hydraulic devices in the cabin and to store hydraulic oil are operated by the internal piston systems. However, since this operates in an environment with high temperature and humidity, it may cause the inner surface to flake during its operation. Therefore, an anodizing surface treatment is applied to improve the corrosion resistance, abrasion resistance, and smooth operation. However, anodizing increases the surface roughness. Accordingly, the polishing process that improves the surface roughness after anodizing is important. However, the existing polishing process is performed manually, which results in an inefficient process. Therefore, in this study, we selected the optimum polishing conditions for effective polishing using the experimental design to improve the polishing process for the $Al_2O_3$ film that forms after anodization. Through experiments, we confirmed that the surface uniformity after polishing was superior as the feed rate was slower when the same polishing time had been applied.