• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.97-98
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• 2005

양성자 조사법에 의하여 고속 전력용 다이오드를 제작하기 위하여 punch-through 다이오드에 다양한 조건으로 양성자를 조사하였다. 동일한 소자에 전자선을 조사한 소자와 속도 향상을 위한 공정이 행하여지지 않은 동일한 소자 각각의 특성을 비교 분석하였다. 양성자 주입은 주입 에너지를 1 MeV 와 1.3 MeV로, 각 에너지 조건에서 도즈를 $1\times10^{12}cm^{-2}$, $1\times10^{13}cm^{-2}$로 변화 시켰다. 분석 결과 양성자 주입된 소자에서 역방향 회복시간은 최소 소자의 약 45%, 전자선이 조사된 소자에 비하여 약 73 %의 값으로 향상시킬 수 있었으며 역방향 항복 전압과 순방향 저항은 처리되지 않은 소자와 전자빔이 조사된 시편들의 값과 비슷한 값을 나타내었다.

• Journal of the Korean Society of Radiology
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• v.9 no.6
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• pp.343-348
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• 2015

The purpose of this study is a comparison of forward planning(FP) and inverse planning(IP) of a radiosurgery procedure. 10 patients of acoustic schwannoma MR image were used for treatment plan. FP-1,2 and IP were established under the same condition. FP and IP were compared by number of shot, conformity index(CI), paddic conformity index(PCI), gradiant index(GI) and treatment time. On average the treatment plan produced by IP tool provided an improved or similar CI, PCI, GI and reduced treatment time as compared to the FP (CI;FP-1:0.85, FP-2:0.86, IP:0.94, PCI;FP-1:0.79, FP-2:0.81, IP:0.78, GI;FP-1:2.94, FP-2:2.94, IP:3.01). The inverse planning system provides a clinically useful plan while reducing the planning time and treatment time.

• Proceedings of the KIEE Conference
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• 1999.07f
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• pp.2572-2574
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• 1999

본논문은 제작된 다이오드 switching시 나타난 전류 증가현상을 관측하고 그 원인을 분석했다. 증가현상을 보이는 구조는 다이오드에 전자를 조사한 소자로 proton을 조사한 구조에 비해서 접합부근에 high defect density 영역이 형성된다. Reverse recovery시에 이영역에 높은 역방향 전계가 형성, 조사에 순간적으로 전류가 증가하게 한다.

• Water for future
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• v.29 no.2
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• pp.153-165
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• 1996

One-dimensional unsteady flow model including weir flow simulation is studied. Applicabilities of both the single channel model with local treatment of the weir overflow, and the looped-network model are studied using a test problem. It is shown that various type of weir flows including reverse flows are successfully simulated. Flow discontinuity due to the high crest elevation can also be simulated. The reverse free-flowing overflow can be simulated by the single-channel model as well as by the looped-network model.

• Journal of the Korean Institute of Telematics and Electronics
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• v.10 no.1
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• pp.27-35
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• 1973

The electronic states of carrier capture centers in reverse biased point-contact germanium diodes have been investigated through the tomperature-and reverse voltage-characteristics of burst noise. The measured values of the time constants wllich represent the electronic states of the centers are extended up to greater than ten minutes, which are about 10,000 times greater than the ones obtained by other investigators. From the relation between these time constants and temperatures, the quasi-Peymi level and the activation energy of the center have been obtained.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.05a
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• pp.527-528
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• 2017

Current-voltage characteristics of source-overlapped gate tunnel field-effect transistor (SOG-TFET) with different channel doping concentration are proposed. Due to the gaussian doping in which the channel region near the source is highly doped and that far from the source is lightly doped, the ambipolar current was reduced, compared with the uniformly-doped SOG-TFET. On-current is almost similar in P-P-N and P-I-N structure but subthreshold swing (SS) of P-P-N TFET enhanced 5 times higher than those of P-I-N TFET. off-current and ambiploar current of the proposed SOG-TFET decrease 10 times and 100 times than those of the uniformly-doped SOG-TFET.

• Progress in Medical Physics
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• v.15 no.3
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• pp.161-166
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• 2004

A simplistic quality assurance (QA) method was designed for a Linac built-in enhanced dynamic wedge (EDW), which can be utilized to make wedged beam distributions. For the purpose of implementing the EDW symmetry QA, a film dosimetry system, low speedy dosimetry film, film densitometer and 3D RTP system were used, and the films irradiated by means of a 60$^{\circ}$ Reversed wedge pair (REWP) method. The profiles were then analyzed in terms of their symmetries, including partial treatment, which is the case of stopping it abruptly during EDW irradiation, and the measured and calculated values compared using the Cad Plan Golden Segmented Treatment Table (Golden STT). The result of this experiment was in good agreement, within 1 %, of the 'reversed wedge pair counterbalance effect'. For the QA of the effective wedge factor (EWF), the authors measured EWFs in relation to the 10$^{\circ}$, 15$^{\circ}$, 20$^{\circ}$, 25$^{\circ}$, 30$^{\circ}$, 45$^{\circ}$ and 60$^{\circ}$ EDW, which were compared with the calculated values using the correction factor derived from the Golden STT and the log files produced automatically during the process of EDW irradiation. By means of this method it was capable of check up the safety of effective wedge factor without any other dosimetry system. The EDW QA was able to be completed within 1 hour from irradiation to analysis as a consequence of the simplified QA procedure, with maximized effectiveness. Unlike the metal wedge system, the EDW system was heavily dependent on the dose rates and jaw movements; therefore, its features could potentially cause inaccuracy. The frequent simplistic QA for the EDW is essential, and could secure against the flaw of dynamic treatment that uses the EDW.

• Journal of the Korean Home Economics Association
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• v.32 no.3
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• pp.227-239
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• 1994

본 연구에서는 중독적 구매행동과 정서(Affect)와의 인과관계를 알아보고 중독적 구매자의 경우 기분전환(mood elevator)을 위하여 구매행동을 하는 것인지를 조사하였다. 연구자료는 설무지조사에 의하여 149명의 피험자(대학생, 시카고 거주자, Debtors Anonymous회원) 로부터 얻어졌다. 중독적 구매행동의 우울증과 낮은 자아존중감을 야기시킬가능성이 역방향으로 우울증과 낮은 자아존중감이 중독적 구매행동을 야기시킬가능성보다 높은 것으로 나타났다. 중독적 구매자는 비중독적 구매자보다 자신에 대하여 부정적 감정을 더 많이 가지고 있었으며(불행한 우울한 불만족한 지루한) 쇼핑하는 동안에는 더 흥분되며 우울하고 쇼핑후에는 더 우울하고 자신감이 더 적어지는 것으로 나타났다. 이러한 결과는 중독적 구매자가 기분전환을 위하여 구매행동을 할것이라는 가정을 지지하지 않았다.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.70-77
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• 1998

Ni/SiC Schottky diodes have been fabricated using epitaxial 4H-SiC and 6H-SiC wafers. The epitaxial n-type layers were grown on $n^{+}$ substrates, with a doping density of 4.0$\times$10$^{16}$ c $m^{-3}$ and a thickness of 10${\mu}{\textrm}{m}$. Oxide-termination has been adopted in order to obtain high breakdown voltage and low leakage current. The fabricated Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes show excellent rectifying characteristics up to the measured temperature range of 55$0^{\circ}C$. In case of oxide-terminated Schottky barrier diodes, breakdown voltage of 973V(Ni/4H-SiC) and 920V(Ni/6H-SiC), and a very low leakage current of less than 1nA at -800V has been observed at room temperature. On non-terminated Schottky barrier diodes, breakdown voltages were 430V(Ni/4H-SiC) and 160v(Ni/6H-SiC). At room temperature, SBH(Schottky Barrier Height), ideality factor and specific on-resistance were 1.55eV, 1.3, 3.6$\times$10$^{-2}$ $\Omega$.$\textrm{cm}^2$ for Ni/4H-SiC Schottky barrier diodes, and 1.24eV, 1.2, 2.6$\times$10$^{-2}$$\Omega$.$\textrm{cm}^2$/ for Ni/SH-SiC Schottky barrier diodes, respectively. These results show that both Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes are very promising for high-temperature and high power applications.s..

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.6
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• pp.1349-1354
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• 2011

In this work, we fabricated the CdZnS/CdTe heterojunction and investigated the C-V characteristics to determine the depletion width and the charge density distribution. A parallel experiment on CdS/CdTe heterojunction was also carried out for comparison. The depletion region width, for CdZnS/CdTe heterojunction, was nearly constant, regardless of bias voltage. However, the depletion region was wider than that of CdS/CdTe heterojunction due to high resistivity of CdZnS film. The interface charge density of CdZnS/CdTe heterojunction was increased linearly with the bias voltage and showed lower values than those for CdS/CdTe junction. The open circuit voltage of CdZnS/CdTe heterojunction solar cells increased with zinc mole ratio due to reducing of the electron affinity difference between CdZnS and CdTe films. However, the increase of series resistance due to the high resistivity of Cd1-xZnxS films results in reducing conversion efficiency.