• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.2
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• pp.36-45
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• 1993

The n-channel MOSFETs with gate-$n^{-}$S/D overlapped structure have been fabricated by ITLDD(inverse-T gate lightly doped drain) technology. The gate length(L$_{mask}$) was 0.8$\mu$m. The degradation effects of hot carriers injected into the gate oxide were analyzed in terms of threshold voltage, transconductance and drain current variations. The degradation dependences on the gate voltage and drain voltage were characterized. The devices with higher n-concentration showed higher resistivity against the hot carrier injection. As the results of investigating the lifetime of the device, the lifetime showed longer than 10 years at V$_{d}$ = 5V for the overlapped devices with the implantation of an phosphorus dose of 5$\times$10$^{13}$ cm$^{-2}$ and an energy of 80 keV in the n$^{-}$resion.

• Communications of the Korean Institute of Information Scientists and Engineers
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• v.3 no.1
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• pp.12-17
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• 1985

This pape rdeals with the first half of ALGOL-60(Subset) compiler -scanner and analyzer-, which is writter in FORTRAN IV. As the original syntax description of ALGOL-60 is too complex to use, real number array, and procedures are omitted. And a subset of ALGOL-60 is defined.

• Proceedings of the KIPE Conference
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• 2015.11a
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• pp.219-220
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• 2015

비대칭 배리어 방법으로 설계된 견인용 매입형 영구자석동기전동기(IPMSM)에 대한 최대토크 제어기법을 Simplorer기반 시뮬레이션해석에 의해 고찰한다. 그리고 레졸버와 R/D 컨버터를 이용하여 회전자의 절대위치를 검출하고, 이를 위한 절대 위치 검출회로 및 제어보드를 제작하여 이에 대한 유효성을 실험을 통해 성능을 확인한다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.3 no.1
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• pp.18-25
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• 1978

The 1/f noise spectrum of short-circuited output drain current due to the Shockley-Read-Hal] recombination centers with a single lifetime in homogeneous nondegenerate MOS-field effcte transtors with n-type channel is calculated under the assumptions that the quasi-Fermi level for the carriers in each energy band can not be defined if we include the fluctuation for time varying quantities. and so 1/f noise is a majority carrier effect. Under these assumptions the derived 1/f noise in this paper show some essential features of the 1/f noise in MOS-field effect transistors. That is, it has no lowfrequency plateau and is proportionnal to the channel cross area A and to the driain bias voltage Vd and inversely proportional to the channel length L3 in MOS field effect transistors. This model can explain the discrepancy between the transition frequency of the noise spectrum from 1/f- response to 1/f2 and the frequency corresponding to the relaxation time related to the surface centers in p-n junction diodes. In this paper the results show that the functional form of noise spectrum is greatly influenced by the functional forms of the electron capture probability cn (E) and the relaxation time r (E) for scattering and the case of lattice scattering show to be responsible for the 4 noise in MOS fold effect transistors. So we canconclude that the source of 1/f noise is due to lattice scattering.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.199.2-199.2
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• 2015

전이금속 칼코겐화합물(TMD)은 2차원 박막 물질로, 그래핀과 함께 차세대 사물인터넷에 적용할 수 있는 전자소자의 소재로 활용될 것으로 기대되고 있다. 특히 TMD는 그래핀과 다르게 1.2 eV 이상의 넓은 밴드갭을 지녀, 기존 실리콘 기반 반도체 소자를 대체할 차세대 물질로 각광받고 있다. TMD는 또한 실리콘 등의 3차원 반도체보다 광전효율이 뛰어나며, 이를 활용한 광전소자의 개발 및 연구가 활발히 진행되고 있다. 그러나 TMD는 그 두께가 나노미터 단위로 매우 얇아 광흡수율이 매우 떨어지는 단점이 있다. 우리는 이러한 TMD 기반 광전소자의 광흡수율을 향상시키기 위해 광전효율이 매우 뛰어난 페로브스카이트(Perovskite)를 TMD 채널 위에 덮음으로써, 이종접합 광전소자를 구현하였다. TMD 물질은 이황화 몰리브데넘($MoS_2$)을 선택하였으며, 광흡수층으로 선택한 페로브스카이트는 $MAPbI_3$을 스핀 코팅을 통해 TMD 채널 층에 접합하였다. 우리는 Photoluminescence 및 UV-Vis 측정을 통해 페로브스카이트 및 페로브스카이트/$MoS_2$ 층의 광특성을 측정하여 페로브스카이트에서 생성된 광캐리어가 확산되어 $MoS_2$에 전달되는 것을 확인하였다. 우리는 추가로 4가지 서로 다른 파장대의 레이저(520, 655, 785, 850 nm)를 이용하여 페로브스카이트 광흡수층이 있을 때와 없을 때의 $MoS_2$ 광검출기의 성능 변화를 관찰하였다.

• Transactions of the Korean Society of Mechanical Engineers
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• v.16 no.9
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• pp.1654-1668
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• 1992

The acoustic field resulted by the radiation of sound from vibrating structure is predicted based on the sound pressure measurements. The sound pressures are measured at discreate point on the measurement plane ; Hologram. Based on these discreate measurements, the sound field away from the acoustic source is constructed based on the discreate form of Kirchhoff-Helmohltz integral equations The velocities, intensities, and pressures of arbitrary plane of interest in space are predicted and visualized The effects on the sound field reconstruction ; finite aperture effect, effect of finite sampling interval in space studied in terms of wraparound error and spatial aliasing. Numerical simulations and experimental verifications are performed to see these effects. To reduce the wraparound error, zero padding technique in space is used and the usefulness of the method is demonstrated by various examples.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.11-16
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• 2016

Silicon carbide (SiC) has received significant attention over the past decade because of its high-voltage, high-frequency and high-thermal reliability in devices compared to silicon. Especially, a SiC Schottky barrier diode (SBD) is most often used in low-voltage switching and low on-resistance power applications. However, electric field crowding at the contact edge of SBDs induces early breakdown and limits their performance. To overcome this problem, several edge termination techniques have been proposed. This paper proposes an improvement in the breakdown voltage using a double-field-plate structure in SiC SBDs, and we design, simulate, fabricate, and characterize the proposed structure. The measurement results of the proposed structure, demonstrate that the breakdown voltage can be improved by 38% while maintaining its forward characteristics without any change in the size of the anode contact junction region.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.3
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• pp.108-115
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• 1990

This paper describes the design and fabrication of a processing element that will be used as a component in the construction of a two dimensional systolic for FFT. The chip performs data shuffling and radix-2 decimation-in-time (DIT) butterfly arithmetic. It consists of a data routing unit, internal control logic and HBA unit which computes butterfly arithmetic. The 6.5K transistors processing element designed with standard cells has been fabricated with a 2u'm double metal CMOS process, and evaluated by wafer probing measurements. The measured characteristics show that a HBA can be computed in 0.5 usec with a 20MHz clok, and it is estimated that the FFT of length 1024 can be transformed in 11.2 usec.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.6
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• pp.436-445
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• 2001

In this paper, we introduce modulo ( 2$^n$-1) parallel-processing residue multipliers, using Op Amp circuits, and their technological application to designing binary multipliers. The limit of multiplying speed in computational processing is a serious harrier in the advances of VLSI technology. To solve this problem, we implement a class of modulo ( 2$^n$-1) parallel multipliers having superior time complexity to O( log$_2$( log$_2$( log$_2$$^n$))) by applying Op Amp circuits, while investigating their technological application to binary multipliers. Since they have excellent time & area complexity compared with previous parallel multipliers, and are applicable to designing binary multipliers of the same efficiency, such parallel multipliers possess high academic value. Indexing Terms Modular Multipliers. Binary Multipliers. Parallel Processing, Operational Amplifiers, Mersenne Numbers.

• Journal of the Korean Institute of Intelligent Systems
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• v.19 no.6
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• pp.852-859
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• 2009

Normally, to extract the defect in TFT-LCD inspection system, the image is obtained by using line scan camera or area scan camera which is achieved by CCD or CMOS sensor. Because of the limited dynamic range of CCD or CMOS sensor as well as the effect of the illumination, these images are frequently degraded and the important features are hard to decern by a human viewer. In order to overcome this problem, the feature vectors in the image are obtained by using the average intensity difference between defect and background based on the weber's law and the standard deviation of the background region. The defect detection method uses non-linear SVM (Supports Vector Machine) method using the extracted feature vectors. The experiment results show that the proposed method yields better performance of defect classification methods over conveniently method.